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24 Nov 2003

Volume 83, Issue 21, pp. 4279-4450

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 4294 (2003); http://dx.doi.org/10.1063/1.1629140 (3 pages)

Han-Youl Ryu, Masaya Notomi, and Yong-Hee Lee
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Identification of a Br-correlated bandgap state in GaAs by radiotracer spectroscopy

F. Albrecht, G. Pasold, J. Grillenberger, N. Achtziger, W. Witthuhn, M. Risse, R. Vianden, and M. Dietrich

Appl. Phys. Lett. 83, 4333 (2003); http://dx.doi.org/10.1063/1.1629370 (3 pages)

Online Publication Date: 18 November 2003

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A deep energy level of bromine in the bandgap of GaAs was determined by means of Radiotracer deep-level transient spectroscopy (DLTS) measurements. For this purpose, the radioactive isotope 77Br was implanted in p-type as well as in n-type GaAs. In the course of repeated DLTS measurements at n-type GaAs, the spectra are dominated by the occurrence of one bandgap state with the trap parameters Et = EC−0.45(2) eV and σ = 2×10−14 cm2. This level vanishes on time scales of the nuclear half-life of the elemental transmutation from 77Br to 77Se (T1/2 = 57 h). Thereby, a definite correlation can be drawn between the observed bandgap state and a Br-correlated defect. © 2003 American Institute of Physics.
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71.55.Eq III-V semiconductors
71.20.Nr Semiconductor compounds

Characteristics of SiO2/n-GaN interfaces with β-Ga2O3 interlayers

Yoshitaka Nakano, Tetsu Kachi, and Takashi Jimbo

Appl. Phys. Lett. 83, 4336 (2003); http://dx.doi.org/10.1063/1.1629371 (3 pages) | Cited 15 times

Online Publication Date: 18 November 2003

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We report on the characteristics of SiO2/n-GaN metal-oxide-semiconductor (MOS) structures with β-Ga2O3 interlayers. β-Ga2O3 15 nm thick was grown by dry oxidation at 800 °C for 6 h, and 100-nm-thick SiO2 was then deposited by sputtering. Capacitance–voltage measurements show a low interface trap density of ∼ 3.9×1010 eV−1 cm−2, probably indicating an unpinning of the surface Fermi level. Additionally, current–voltage measurements display a low leakage current of ∼1.2 μA/cm2 at a gate voltage of +20 V, regardless of rough oxide surface, as confirmed by atomic force microscopy observations. Thus, the stacked SiO2/β-Ga2O3 insulator is found to improve both the electrical interface properties and the gate dielectric characteristics of the GaN MOS structures. © 2003 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.Mq Oxidation
81.15.Cd Deposition by sputtering

In-plane strain fluctuation in strained-Si/SiGe heterostructures

K. Sawano, S. Koh, Y. Shiraki, N. Usami, and K. Nakagawa

Appl. Phys. Lett. 83, 4339 (2003); http://dx.doi.org/10.1063/1.1629142 (3 pages) | Cited 27 times

Online Publication Date: 18 November 2003

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In-plane strain fluctuation in the strained-Si/relaxed-SiGe heterostructure was studied by micro-Raman spectroscopy. It was found that misfit dislocation, which is necessarily induced by strain relaxation of SiGe buffer layers, caused micrometer-scale inhomogeneous strain field in the strained-Si layer as well as SiGe buffer, which may degrade device performance. After annealing, the fluctuation was found to be enhanced due to partial strain relaxation of strained Si, particularly in the region where tensile strain was relatively high before annealing. From homoepitaxial growth of SiGe on planarized SiGe buffer layers, it was confirmed that the growth rate also fluctuated laterally, in correspondence with the in-plane strain variation. © 2003 American Institute of Physics.
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68.35.Gy Mechanical properties; surface strains
61.72.Cc Kinetics of defect formation and annealing
68.55.A- Nucleation and growth

Electronic structure of pentacene adsorbates on Au(111) surfaces

Taku Suzuki, Mitsunori Kurahashi, Xin Ju, and Yasushi Yamauchi

Appl. Phys. Lett. 83, 4342 (2003); http://dx.doi.org/10.1063/1.1630161 (3 pages) | Cited 9 times

Online Publication Date: 18 November 2003

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The electronic structure of pentacene deposited on a Au(111) substrate in the initial stage of growth was investigated using metastable deexcitation spectroscopy. The occupation of the pentacene π∗ 4b1u orbital, which corresponds to the lowest unoccupied molecular orbital of the gas phase species, was found at the Fermi level. The donation and backdonation-type interactions between the pentacene adsorbate and the Au surface are discussed. © 2003 American Institute of Physics.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
68.43.Fg Adsorbate structure (binding sites, geometry)
73.20.At Surface states, band structure, electron density of states

Field-effect transistors on tetracene single crystals

R. W. I. de Boer, T. M. Klapwijk, and A. F. Morpurgo

Appl. Phys. Lett. 83, 4345 (2003); http://dx.doi.org/10.1063/1.1629144 (3 pages) | Cited 138 times

Online Publication Date: 18 November 2003

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We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of 0.4 cm2/V s. The nonmonotonous temperature dependence of the mobility, its weak gate voltage dependence, as well as the sharpness of the subthreshold slope, confirm the high quality of single-crystal devices. This is due to the fabrication process that does not substantially affect the crystal quality. © 2003 American Institute of Physics.
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85.65.+h Molecular electronic devices
85.30.Tv Field effect devices
72.80.Le Polymers; organic compounds (including organic semiconductors)

Real-time observation of the energy band diagram during microcrystalline silicon p–i interface formation

Hiroyuki Fujiwara, Michio Kondo, and Akihisa Matsuda

Appl. Phys. Lett. 83, 4348 (2003); http://dx.doi.org/10.1063/1.1631058 (3 pages) | Cited 3 times

Online Publication Date: 18 November 2003

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We have performed real-time infrared attenuated total reflection spectroscopy to characterize free-carrier absorption during microcrystalline silicon (μc-Si:H) p–i interface formation. In the μc-Si:H i-layer growth on the p layer, a free-carrier concentration in the p layer showed a large variation, in accordance with a built-in potential present at the p/i interface. We demonstrate that real-time observation of the energy band diagram is possible during semiconductor thin-film growth by employing free carriers in a doped layer as a probe. © 2003 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
68.35.Ct Interface structure and roughness
78.66.Db Elemental semiconductors and insulators
78.30.Am Elemental semiconductors and insulators
71.20.Mq Elemental semiconductors
78.47.-p Spectroscopy of solid state dynamics
68.55.-a Thin film structure and morphology

Stress-induced effects on depletion-layer capacitance of metal–oxide–semiconductor capacitors

Kazunori Matsuda and Yozo Kanda

Appl. Phys. Lett. 83, 4351 (2003); http://dx.doi.org/10.1063/1.1630166 (3 pages) | Cited 8 times

Online Publication Date: 18 November 2003

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See Also: Publisher's Note

Show Abstract
Depletion-layer capacitance of n-type metal–oxide–semiconductor capacitors is investigated under a uniaxial 〈110〉 stressed condition, by means of a high-frequency sweep measurement at room temperature. Abrupt large shifts of the depletion-layer capacitance by the stress are observed. Gauge factors of the effects are approximately 13–33 at 500 ppm strain, which are almost comparable with the piezoresistance effect, and have an opposite sign in tension and compression. The capacitance shifts could be explained with the intrinsic Fermi level which lifts and drops by a change in the ratio of the density-of-states effective masses of holes to electrons due to the band splitting. © 2003 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
85.30.Tv Field effect devices
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
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