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24 Nov 2003

Volume 83, Issue 21, pp. 4279-4450

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Appl. Phys. Lett. 83, 4294 (2003); http://dx.doi.org/10.1063/1.1629140 (3 pages)

Han-Youl Ryu, Masaya Notomi, and Yong-Hee Lee
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Visible and near-infrared alternating-current electroluminescence from sputter-grown GaN thin films doped with Er

Joo Han Kim, N. Shepherd, M. R. Davidson, and Paul H. Holloway

Appl. Phys. Lett. 83, 4279 (2003); http://dx.doi.org/10.1063/1.1622106 (3 pages) | Cited 11 times

Online Publication Date: 18 November 2003

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A demonstration of visible and near-infrared (NIR) alternating-current electroluminescence from sputter-grown GaN thin films doped with Er is reported. The alternating-current thin-film electroluminescent (ACTFEL) devices were constructed using a standard single-insulating structure, Al/GaN:Er/aluminum–titanium–oxide/indium–tin–oxide/Corning 7059 glass. Visible emissions peaked at 550 and 665 nm as well as NIR emissions centered at 1000 and 1550 nm were observed from the fabricated ACTFEL devices operating at room temperature. The visible and NIR emissions at 550, 665, 1000, and 1550 nm were attributed to the Er3+ 4f–4f intrashell transitions from the 4S3/2, 4F9/2, 4I11/2, and 4I13/2 excited-state levels to the 4I15/2 ground state, respectively. The green 550 nm emission had a larger dI/dV and a higher threshold voltage, Vth than the NIR 1550 nm emission, which could result from the need for higher electron impact energy to impact-excite the Er ion into the higher-energy excited-states for emission of green light. © 2003 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Fd III-V semiconductors
81.15.Cd Deposition by sputtering

Direct measurement of the refractive index profile of phase gratings, recorded in silver halide holographic materials by phase-contrast microscopy

I. Bányász

Appl. Phys. Lett. 83, 4282 (2003); http://dx.doi.org/10.1063/1.1629794 (3 pages) | Cited 5 times

Online Publication Date: 18 November 2003

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Plane-wave phase holograms recorded in Agfa-Gevaert 8E75HD emulsions and processed by the combination of AAC developer and the R-9 bleaching agent were studied by phase-contrast microscopy, using high-power immersion (100×) objective. Thus the modulation of the refractive index as a function of the bias exposure and the visibility of the recording interference pattern can also be determined. Measured diffraction efficiencies were compared to those predicted by coupled wave theory, using the measured refractive index modulations. Direct measurement of the phase profile of the gratings can be used for optimizing processing. © 2003 American Institute of Physics.
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42.40.Eq Holographic optical elements; holographic gratings
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Electrically switchable and thermally erasable biphotonic holographic gratings in dye-doped liquid crystal films

C.-R. Lee, T.-S. Mo, K.-T. Cheng, T.-L. Fu, and A. Y.-G. Fuh

Appl. Phys. Lett. 83, 4285 (2003); http://dx.doi.org/10.1063/1.1629374 (3 pages) | Cited 24 times

Online Publication Date: 18 November 2003

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This study investigates high-resolution photoinduced biphotonic holographic gratings in azo-dye-doped liquid crystal films. A biphotonic grating (BG) is formed under the illumination of one linearly polarized green light with the simultaneous irradiation of an interference pattern created by two linearly polarized red lights. This study ascribes the formation of this grating to two mechanisms. One mechanism is the green-light-inducing strong dye absorption followed by adsorption through the trans–cis isomerization; the other mechanism is the inhibition effect of adsorption induced by the red light through the cis–trans inverse isomerization. These produce a twisted nematic structure-modulated pattern, which, in turn, causes the BG. Additional experiments demonstrate that the formed BGs are electrically switchable and thermally erasable. © 2003 American Institute of Physics.
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42.40.Eq Holographic optical elements; holographic gratings
82.30.Qt Isomerization and rearrangement
42.70.Df Liquid crystals

Ultraviolet amplified spontaneous emission from zinc oxide ridge waveguides on silicon substrate

S. F. Yu, Clement Yuen, S. P. Lau, Y. G. Wang, H. W. Lee, and B. K. Tay

Appl. Phys. Lett. 83, 4288 (2003); http://dx.doi.org/10.1063/1.1629784 (3 pages) | Cited 23 times

Online Publication Date: 18 November 2003

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Zinc oxide (ZnO) thin-film waveguides with ridge structures have been fabricated on n-type (100) silicon substrates. The deposition of high-crystal-quality ZnO thin films on the lattice-mismatched silicon substrate was achieved by using the filtered cathodic vacuum arc technique. A ridge structure is defined on the ZnO thin film by plasma etching. Room temperature amplified spontaneous emission with peak wavelength at 385 nm is observed under 355 nm optical excitation. The pump threshold is found to be around 0.45 MW/cm2. The maximum net optical gain of the ZnO waveguide is larger than 120 cm−1 at a pump intensity of 1.9 MW/cm2. © 2003 American Institute of Physics.
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78.66.Hf II-VI semiconductors
42.82.Et Waveguides, couplers, and arrays
78.55.Et II-VI semiconductors
78.45.+h Stimulated emission
42.79.Gn Optical waveguides and couplers
81.65.Cf Surface cleaning, etching, patterning
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
42.55.Px Semiconductor lasers; laser diodes

Truly bistable twisted nematic liquid crystal display using photoalignment technology

Fion S. Y. Yeung and H. S. Kwok

Appl. Phys. Lett. 83, 4291 (2003); http://dx.doi.org/10.1063/1.1630159 (3 pages) | Cited 9 times

Online Publication Date: 18 November 2003

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Truly bistable twisted nematic liquid crystal display has been fabricated using photoalignment. This display can be switched between the −22.5° and 157.5° twist states by breaking the anchoring condition on one of the substrates. The application of a photoalignable polymer SDA-1 was able to achieve the weak anchoring energy necessary for switching. Both theoretical and experimental results show that this mode has excellent contrast ratio and wide viewing angles. © 2003 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices
42.65.Pc Optical bistability, multistability, and switching, including local field effects
61.30.Vx Polymer liquid crystals
42.70.Df Liquid crystals

High-quality-factor and small-mode-volume hexapole modes in photonic-crystal-slab nanocavities

Han-Youl Ryu, Masaya Notomi, and Yong-Hee Lee

Appl. Phys. Lett. 83, 4294 (2003); http://dx.doi.org/10.1063/1.1629140 (3 pages) | Cited 62 times

Online Publication Date: 18 November 2003

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Using finite-difference time-domain calculations, we investigate the hexapole mode of photonic-crystal-slab modified triangular single-defect cavity structures as a good candidate for a high-quality factor (Q) and small-mode volume (V) resonant mode. Structural parameters are optimized to obtain very large Q of even higher than 2×106 with small effective V of the order of cubic wavelength in material, the record value of theoretical Q/V. It is found, by the Fourier-space investigation of resonant modes, that such a high Q from the hexapole mode is achieved due both to the cancellation mechanism related to hexagonally symmetric whispering-gallery-mode distribution and to the mode delocalization mechanism. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
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