APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

24 Nov 2003

Volume 83, Issue 21, pp. 4279-4450

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 4294 (2003); http://dx.doi.org/10.1063/1.1629140 (3 pages)

Han-Youl Ryu, Masaya Notomi, and Yong-Hee Lee
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Native hole traps of ferromagnetic Ga1−xMnxAs layers on (100) GaAs substrates

I. T. Yoon, C. J. Park, H. Y. Cho, T. W. Kang, K. H. Kim, and D. J. Kim

Appl. Phys. Lett. 83, 4354 (2003); http://dx.doi.org/10.1063/1.1629398 (3 pages) | Cited 1 time

Online Publication Date: 18 November 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Dominant hole traps of ferromagnetic Ga1−xMnxAs and epilayers with an Mn mole fraction of x ≈ 2.2% and 4.4% were identified employing deep-level transient spectroscopy. Three hole traps with binding energies of EA = 0.38±0.01 eV at 140 K, EB = 0.43±0.01 eV at 220 K, and EC = 0.65±0.01 eV at 300 K above the top of the valence band were observed. Comparing with theoretical data of GaAs, it appears most likely that the trap with EA is associated with a gallium vacancy (VGa) or the arsenic antisite complex (GaAs+VAs), whereas the traps with EB and EC are associated with two charge states of arsenic antisite (AsGa) defect. The hole capture cross sections were determined as σp(A) = 3.7×10−11, σp(B) = 1.5×10−14, and σp(C) = 1.1×10−14 cm2, respectively. The samples with x ≈ 2.2% and x ≈ 4.4% show typical behavior for metallic Ga1−xMnxAs and insulator Ga1−xMnxAs, respectively, through Hall measurements. © 2003 American Institute of Physics.
Show PACS
71.55.Eq III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
75.50.Pp Magnetic semiconductors
61.72.J- Point defects and defect clusters
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Transition from granular to dilute magnetic semiconducting multilayers in ion-beam-deposited ZnO/Co

A. B. Pakhomov, Bradley K. Roberts, and Kannan M. Krishnan

Appl. Phys. Lett. 83, 4357 (2003); http://dx.doi.org/10.1063/1.1629369 (3 pages) | Cited 32 times

Online Publication Date: 18 November 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Multilayers of Co/ZnO, with varying nominal thickness of metal (2–10 Å) and semiconductor (2–20 Å), were prepared by ion-beam sputtering. Magnetic, transport, and magnetotransport measurements were carried out over a temperature range of 2.5 to 300 K. Upon decreasing Co thickness and increasing ZnO thickness in the multilayer stack, the properties of the samples undergo a crossover from those of granular metallic Co/semiconductor multilayers to a dilute magnetic semiconductor superlattice. We interpret ferromagnetism in the latter case as due to ordering in the Co-rich layers, mediated by carriers from lightly doped, high carrier concentration layers. © 2003 American Institute of Physics.
Show PACS
68.65.Ac Multilayers
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
81.15.Cd Deposition by sputtering
75.50.Pp Magnetic semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ga II-VI semiconductors
75.50.Cc Other ferromagnetic metals and alloys

Temperature dependence of the trapped magnetic field in MgB2 bulk superconductors

R. V. Viznichenko, A. A. Kordyuk, G. Fuchs, K. Nenkov, K.-H. Müller, T. A. Prikhna, and W. Gawalek

Appl. Phys. Lett. 83, 4360 (2003); http://dx.doi.org/10.1063/1.1629148 (3 pages) | Cited 1 time

Online Publication Date: 18 November 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Based on dc magnetization measurements, the temperature dependencies of the trapped magnetic field have been calculated for two MgB2 samples prepared by two different techniques: high-pressure sintering and hot pressing. Experimentally measured trapped field values for the first sample coincide remarkably well with calculated ones over the whole temperature range. This shows, on one hand, the validity of the introduced calculation approach, and demonstrates, on the other hand, the great prospects of the hot pressing technology for large scale superconducting applications of the MgB2. © 2003 American Institute of Physics.
Show PACS
74.25.Ha Magnetic properties including vortex structures and related phenomena
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
74.25.Sv Critical currents

Magnetic coercivity patterns for magnetic recording on patterned media

M. Albrecht, C. T. Rettner, M. E. Best, and B. D. Terris

Appl. Phys. Lett. 83, 4363 (2003); http://dx.doi.org/10.1063/1.1630153 (3 pages) | Cited 18 times

Online Publication Date: 18 November 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Magnetic patterns were created by locally altering the magnetic coercivity of a perpendicular anisotropy film by ion irradiation. The resulting pattern, after dc magnetizing, consists of regions having alternating up/down magnetization patterns in remanence. In this case, the magnetization of the soft magnetic material in the exposed segments is reversed and stabilized by the demagnetization fields of the adjacent unexposed media. A magnetic pattern generated in this manner can be used as a type of servo pattern for recording head positioning. An accuracy in positioning of better than 10 nm was demonstrated and deliberate magnetic patterns were written and read back by addressing individual 80 nm single-domain nanostructures. © 2003 American Institute of Physics.
Show PACS
75.50.Ss Magnetic recording materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Gw Magnetic anisotropy
61.80.Jh Ion radiation effects
75.70.Ak Magnetic properties of monolayers and thin films
61.82.Ms Insulators

Influence of interfacial bonding on giant magnetoelectric response of multiferroic laminated composites of Tb1−xDyxFe2 and PbZrxTi1−xO3

Ce-Wen Nan, Gang Liu, and Yuanhua Lin

Appl. Phys. Lett. 83, 4366 (2003); http://dx.doi.org/10.1063/1.1630157 (3 pages) | Cited 70 times

Online Publication Date: 18 November 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The influence of interfacial bonding on the magnetoelectric response in multiferroic laminated composites of Tb1−xDyxFe2 (Terfenol-D) and lead–zirconate–titanate (PZT) by using the recent Green’s function technique was studied. Numerical results demonstrate that a giant magnetoelectric response is produced in the simple sandwiched composites of thick Terfenol-D layers and thin PZT layers. The interfacial epoxy binders used for bonding PZT and Terfenol-D together are very critical to the giant magnetoelectric response of the composites. A thicker interfacial epoxy film and, in particular, a sliding interfacial bonding by a very flexible epoxy would result in a significant drop in the magnetoelectric response. © 2003 American Institute of Physics.
Show PACS
68.35.Np Adhesion
82.35.Gh Polymers on surfaces; adhesion
75.80.+q Magnetomechanical effects, magnetostriction
68.35.Ct Interface structure and roughness
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
75.50.Bb Fe and its alloys

Effects of transition curvature on perpendicular magnetic recording performance

P. A. A. van der Heijden, T. W. Clinton, and M. F. Erden

Appl. Phys. Lett. 83, 4369 (2003); http://dx.doi.org/10.1063/1.1629375 (3 pages) | Cited 2 times

Online Publication Date: 18 November 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effect of magnetic transition curvature has been studied for a perpendicular recording system. The curvature of the medium transitions is varied in a controlled manner by altering the write poles using a focused ion beam. Tracks are written using these write heads and are characterized with a magnetic force microscope, which demonstrates the ability to manipulate transition shape and even correct the curvature. The effect of transition curvature on the perpendicular recording performance is characterized by spinstand measurements and bit error rate simulations. These results show a significant performance loss, demonstrating that transition curvature degrades perpendicular recording performance. © 2003 American Institute of Physics.
Show PACS
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.

Using antiferromagnetic/ferromagnetic bilayers as detection layers in magnetic tunnel junctions

G. Malinowski, M. Hehn, M. Sajieddine, F. Montaigne, E. Jouguelet, F. Canet, M. Alnot, D. Lacour, and A. Schuhl

Appl. Phys. Lett. 83, 4372 (2003); http://dx.doi.org/10.1063/1.1630171 (3 pages) | Cited 10 times

Online Publication Date: 18 November 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
It is shown that the association of an antiferromagnetic material with a ferromagnetic material in an exchange-coupled bilayer, often used in spintronic devices as a magnetic reference or pinned system, can be used as a detection layer in magnetoresistive sensors. The magnetic response is shown to be reversible and linear in an adjustable field window. The sensitivity is studied as a function of temperature. © 2003 American Institute of Physics.
Show PACS
72.25.Mk Spin transport through interfaces
75.47.-m Magnetotransport phenomena; materials for magnetotransport
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.30.Et Exchange and superexchange interactions
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close