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24 Nov 2003

Volume 83, Issue 21, pp. 4279-4450

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 4294 (2003); http://dx.doi.org/10.1063/1.1629140 (3 pages)

Han-Youl Ryu, Masaya Notomi, and Yong-Hee Lee
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Contactless electroreflectance of CdSe/ZnSe quantum dots grown by molecular-beam epitaxy

Martín Muñoz, Shiping Guo, Xuecong Zhou, Maria C. Tamargo, Y. S. Huang, C. Trallero-Giner, and A. H. Rodríguez

Appl. Phys. Lett. 83, 4399 (2003); http://dx.doi.org/10.1063/1.1628393 (3 pages) | Cited 15 times

Online Publication Date: 18 November 2003

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The interband transitions of a capped CdSe quantum-dot structure have been investigated using contactless electroreflectance. The electroreflectance spectrum shows transitions originating from all the portions of the sample including the quantum dots and the wetting layer. The transitions of the two-dimensional layers have been modeled using an envelope approximation calculation which takes into account the biaxial strain in the wetting layer. A good agreement was found between the experimental values for the transition energies and the calculated ones. From atomic force microscopy measurements, a lens shape was observed for the uncapped quantum dots. Taking into account the lens shape geometry and assuming that the effective height-to-radius ratio is preserved, the size of the capped quantum dots was determined using the observed electroreflectance transitions, in the framework of the effective mass approximation. © 2003 American Institute of Physics.
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78.67.Hc Quantum dots
78.20.Jq Electro-optical effects
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.08.Bc Wetting

Dynamic and atomistic deformation of sp2-bonded boron nitride nanoarrays

C. Iwamoto, H. S. Yang, S. Watanabe, and T. Yoshida

Appl. Phys. Lett. 83, 4402 (2003); http://dx.doi.org/10.1063/1.1629139 (3 pages) | Cited 6 times

Online Publication Date: 18 November 2003

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With the aim of developing a nanostructure, we produced an sp2-bonded boron nitride nanoarray (BNNA), and observed its dynamic deformation behavior using high-resolution transmission electron microscopy with a piezoceramic tube for three-axis positioning of an indenter. The BNNA has remarkable flexibility and resiliency, such that no permanent deformation occurred when it was bent repeatedly to the minimum radius of curvature of about 4 nm. Even in repeated bends to the minimum radius of curvature of about 0.3 nm, the BNNA underwent no catastrophic failure. © 2003 American Institute of Physics.
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62.25.-g Mechanical properties of nanoscale systems
62.20.F- Deformation and plasticity
61.46.-w Structure of nanoscale materials

Amplitude-modulated electrostatic nanolithography in polymers based on atomic force microscopy

Sergei F. Lyuksyutov, Pavel B. Paramonov, Shane Juhl, and Richard A. Vaia

Appl. Phys. Lett. 83, 4405 (2003); http://dx.doi.org/10.1063/1.1629787 (3 pages) | Cited 21 times

Online Publication Date: 18 November 2003

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Amplitude modulated electrostatic lithography using atomic force microscopy (AFM) on 20–50 nm thin polymer films is discussed. Electric bias of AFM tip increases the distance over which the surface influences the oscillation amplitude of an AFM cantilever, providing a process window to control tip-film separation. Arrays of nanodots, as small as 10–50 nm wide by 1–10 nm high are created via a localized Joule heating of a small fraction of polymer above the glass transition temperature, followed by electrostatic attraction of the polarized viscoelastic polymer melt toward the AFM tip in the strong (108–109 V/m) nonuniform electric field. © 2003 American Institute of Physics.
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81.16.Nd Micro- and nanolithography
81.16.Ta Atom manipulation
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.41.+e Polymers, elastomers, and plastics
85.40.Hp Lithography, masks and pattern transfer
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
68.37.Ps Atomic force microscopy (AFM)

Transfer of nanoporous pattern of anodic porous alumina into Si substrate

Hidetaka Asoh, Mamoru Matsuo, Megumi Yoshihama, and Sachiko Ono

Appl. Phys. Lett. 83, 4408 (2003); http://dx.doi.org/10.1063/1.1629385 (3 pages) | Cited 35 times

Online Publication Date: 18 November 2003

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Nanohole arrays in a Si substrate with a self-ordered configuration having a 100 nm hole periodicity were fabricated by the pattern transfer of the hole configuration of anodic porous alumina. The self-ordered anodic porous alumina used as a mask was directly prepared by anodizing an aluminum film sputtered on a Si substrate. The transfer of the nanoporous pattern of anodic alumina into the Si substrate could be achieved by removing silicon oxide, which was produced by the anodic oxidation of the local part of the Si substrate underneath the barrier layer corresponding to the pore base. In addition, we confirmed that the transformation of the nanostructure of porous alumina grown on a Si substrate is comparable to the current transient during alumina film formation. © 2003 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.Pr Micro- and nano-oxidation
81.65.Mq Oxidation

Thickness and temperature dependence of stress relaxation in nanoscale aluminum films

S. Hyun, W. L. Brown, and R. P. Vinci

Appl. Phys. Lett. 83, 4411 (2003); http://dx.doi.org/10.1063/1.1629381 (3 pages) | Cited 9 times

Online Publication Date: 18 November 2003

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We have found that stress relaxation of nanoscale Al thin films is strongly dependent on both film thickness and temperature. Films 33, 107, and 205 nm thick prepared by evaporation onto a silicon nitride membrane substrate were studied using membrane resonance. A single thermal cycle to 300 °C was used to establish a stress, after which the time dependence of the stress was measured for the three film thicknesses at 50, 75, and 100 °C. The relaxation rate is highest for the highest temperature and the thinnest film. A dislocation locking mechanism is suggested as a possible explanation for the observed thickness dependence. © 2003 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Two-dimensional micrometer-sized single-crystalline ZnO thin nanosheets

J. Q. Hu, Y. Bando, J. H. Zhan, Y. B. Li, and T. Sekiguchi

Appl. Phys. Lett. 83, 4414 (2003); http://dx.doi.org/10.1063/1.1629788 (3 pages) | Cited 88 times

Online Publication Date: 18 November 2003

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Two-dimensional micrometer-sized single-crystalline ZnO thin nanosheets were achieved on a large scale, in which Zn thin nanosheets (precursor) were first grown via a thermal decomposition and reduction of the starting ZnS powder, and then converted to the ZnO nanosheets via a simple oxidation process. The ZnO nanosheets, growing along [100] or [010] direction and enclosed by ± (001) facets, have lateral dimensions up to several hundreds of microns, and thicknesses of 30–70 nm. Both room-temperature cathodoluminescence and photoluminescence measurements reveal that the present ZnO nanosheets have visible emission bands ranging from the green to red. © 2003 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
81.05.Dz II-VI semiconductors
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
78.40.Fy Semiconductors

Ultrafast patterning of nanostructures in polymers using laser assisted nanoimprint lithography

Qiangfei Xia, Chris Keimel, Haixiong Ge, Zhaoning Yu, Wei Wu, and Stephen Y. Chou

Appl. Phys. Lett. 83, 4417 (2003); http://dx.doi.org/10.1063/1.1630162 (3 pages) | Cited 22 times

Online Publication Date: 18 November 2003

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We propose and demonstrate a nanopatterning technique, laser-assisted nanoimprint lithography (LAN), in which the polymer is melted by a single excimer laser pulse and then imprinted by a mold made of fused quartz. LAN has been used to pattern nanostructures in various polymer films on a Si or quartz substrate with high fidelity over the entire mold area. Here we show 200 nm pitch gratings with 100 nm linewidth and 90 nm height. The entire imprint from melting the polymer to completion of the imprint is less than 500 ns. The mold has been used multiple times without cleaning between each imprint. LAN not only greatly shortens the imprint processing time, but also significantly reduces the heating and expansion of the substrate and mold, leading to better overlay alignment between the two. © 2003 American Institute of Physics.
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81.16.Nd Micro- and nanolithography
81.16.Rf Micro- and nanoscale pattern formation

Nanoscale surface and subsurface defects induced in lithium niobate by a femtosecond laser

Eric A. Stach, Velimir Radmilovic, Devesh Deshpande, Ajay Malshe, Dennis Alexander, and David Doerr

Appl. Phys. Lett. 83, 4420 (2003); http://dx.doi.org/10.1063/1.1629797 (3 pages) | Cited 17 times

Online Publication Date: 18 November 2003

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In this letter, electron and ion microscopy techniques have been used to characterize the changes that result when single crystals of lithium niobate are processed using a focused femtosecond laser. The prevailing observation is that of competing processes—ablation and partial redeposition, thermal shock, and extreme quenching, as well as effects associated with shock wave propagation, resulting in both amorphization and heavily defective regions at the focal point of the laser pulse. The observed microstructural defects have a direct implication in optical memory or waveguide writing, where the goal is to realize consistent structural features with uniform optical properties. © 2003 American Institute of Physics.
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68.35.Dv Composition, segregation; defects and impurities
42.62.Cf Industrial applications
42.70.Ln Holographic recording materials; optical storage media
42.79.Gn Optical waveguides and couplers
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
79.20.Ds Laser-beam impact phenomena
62.50.-p High-pressure effects in solids and liquids
61.43.Er Other amorphous solids
68.37.Lp Transmission electron microscopy (TEM)
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.86.+b Optical workshop techniques
61.82.Ms Insulators

Patterned growth of coiled carbon nanotubes by a template-assisted technique

D. Y. Zhong, S. Liu, and E. G. Wang

Appl. Phys. Lett. 83, 4423 (2003); http://dx.doi.org/10.1063/1.1630164 (3 pages) | Cited 12 times

Online Publication Date: 18 November 2003

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A method for controlled synthesis of coiled carbon nanotubes (CNTs) is demonstrated, in which three-dimensional columns of aligned CNTs are used as a template. The coiled CNTs with pitches and coil diameters from 100 to 300 nm are regrown on the straight CNT arrays and the mesoporous structure between the CNT arrays produces an asymmetric growth condition for the coil formation. As observed using transmission electron microscopy, the graphitic layers on the tube wall are stacking-disordered due to the coil geometry. The growth mechanism of the coiled CNTs is also proposed. © 2003 American Institute of Physics.
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81.07.De Nanotubes
61.46.-w Structure of nanoscale materials
81.16.Hc Catalytic methods
68.37.Lp Transmission electron microscopy (TEM)

Nonlinear current-voltage characteristics of Pt nanowires and nanowire transistors fabricated by electron-beam deposition

L. Rotkina, J.-F. Lin, and J. P. Bird

Appl. Phys. Lett. 83, 4426 (2003); http://dx.doi.org/10.1063/1.1629382 (3 pages) | Cited 41 times

Online Publication Date: 18 November 2003

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We have fabricated Pt/C composite nanowires and nanowire transistors, using the technique of electron-beam-induced deposition. The current-voltage characteristics of the granular nanowires are strongly nonlinear at 4.2 K, and evidence for this nonlinearity is found to persist to room temperature. A voltage gap of order 0.1–0.2 V is observed at the lowest temperatures, and we suggest that this feature is consistent with single-electron tunneling via Pt nanocrystals that form in the wires during their fabrication. In order to further explore this possibility, we incorporate the nanowires into three-terminal transistor structures and find evidence for a gate-induced modulation of their voltage gap. © 2003 American Institute of Physics.
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85.35.Gv Single electron devices
73.63.Nm Quantum wires
81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials
68.65.La Quantum wires (patterned in quantum wells)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
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