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Applied Physics Letters / Volume 83 / Issue 22 / DEVICE PHYSICS

Appl. Phys. Lett. 83, 4655 (2003); http://dx.doi.org/10.1063/1.1633018 (3 pages)

Electrostatic discharge effects in AlGaN/GaN high-electron-mobility transistors

J. Kuzmík1, D. Pogany1, E. Gornik1, P. Javorka2, and P. Kordoš2

1Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria
2Institute of Thin Films and Interfaces (ISG-1), Research Centre Jülich, Jülich D-52425, Germany

(Received 28 May 2003; accepted 20 October 2003)

We investigate 50 μm gate width/0.45 μm length AlGaN/GaN high-electron-mobility transistors (HEMTs) subjected to 100 ns long current pulses that simulate an electrostatic discharge. After source–drain breakdown at around 90 V, the pulsed I–V source–drain characteristic is S shaped with an abrupt snap back to about 20 V at stress current of Istress = 0.2 A. Backside interferometric thermal mapping of the HEMT shows that current filamentation accompanies the transition to the low-voltage/high-current region. The shift in transistor threshold voltage is explained by electron trapping in the buffer. It is assumed that breakdown in the regime of electrostatic discharge can be explained as an avalanche-injection event that forms a current filament through the device buffer layer. © 2003 American Institute of Physics.

© 2003 American Institute of Physics

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KEYWORDS and PACS

Keywords

electrostatic discharge, aluminium compounds, gallium compounds, III-V semiconductors, high electron mobility transistors, semiconductor device breakdown, semiconductor device measurement

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1633018

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    N. Dyakonova, A. Dickens, M. S. Shur, R. Gaska, and J. W. Yang, Appl. Phys. Lett. 72, 2562 (1998)APPLAB000072000020002562000001.

    W. S. Tan, P. A. Houston, P. J. Parbrook, D. A. Wood, G. Hill, and C. R. Whitehouse, Appl. Phys. Lett. 80, 3207 (2002)APPLAB000080000017003207000001.


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