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22 Dec 2003

Volume 83, Issue 25, pp. 5121-5321

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Appl. Phys. Lett. 83, 5310 (2003); http://dx.doi.org/10.1063/1.1635070 (3 pages)

Z. G. Chiragwandi, O. Nur, M. Willander, and N. Calander
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Photonic crystal optical filter based on contra-directional waveguide coupling

Min Qiu, Mikaël Mulot, Marcin Swillo, Srinivasan Anand, Bozena Jaskorzynska, Anders Karlsson, Martin Kamp, and Alfred Forchel

Appl. Phys. Lett. 83, 5121 (2003); http://dx.doi.org/10.1063/1.1634373 (3 pages) | Cited 24 times

Online Publication Date: 17 December 2003

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Wavelength-selective operation of an optical filter (add/drop) based on a contra-directional photonic crystal waveguide coupler is demonstrated. The waveguides are defined as line defects in a two-dimensional triangular photonic crystal fabricated in an InP/GaInAsP heterostructure. The device is characterized using the end-fire method for the drop functionality. The experimental data are in good agreement with the theoretical results predicted by finite-difference time-domain simulations. © 2003 American Institute of Physics.
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42.79.Ci Filters, zone plates, and polarizers
42.82.Et Waveguides, couplers, and arrays
42.70.Qs Photonic bandgap materials
02.70.Bf Finite-difference methods

Observation of three-dimensional optical stacking of microparticles using a single Laguerre–Gaussian beam

W. M. Lee and X.-C. Yuan

Appl. Phys. Lett. 83, 5124 (2003); http://dx.doi.org/10.1063/1.1635079 (3 pages) | Cited 6 times

Online Publication Date: 17 December 2003

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Optical stacking of microparticles has been demonstrated earlier using a single focused Gaussian beam, multiple beams from Laguerre–Gaussian (LG) interference patterns, and Bessel beams. In this letter, we demonstrate that a single focused LG beam has the ability to optically stack multiple high-index microparticles around the intensity annular rings of the LG beam, and thus form a three-dimensional structure. Due to the symmetrically circular shape of the LG, we have been able to stack particles in a circular manner. Hence we propose that this technique of stacking can be extended to optical fields of designed shaped such that the stacking microparticles will be organized according to the shaped of the beam intensity. This is an alternative method to obtain a desired three-dimensional crystalline structure, where shaping the optical vortices beam is used instead of using multiple beams. © 2003 American Institute of Physics.
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37.10.Vz Mechanical effects of light on atoms, molecules, and ions

Top-emitting organic light-emitting devices using surface-modified Ag anode

Chieh-Wei Chen, Ping-Yuan Hsieh, Huo-Hsien Chiang, Chun-Liang Lin, Han-Ming Wu, and Chung-Chih Wu

Appl. Phys. Lett. 83, 5127 (2003); http://dx.doi.org/10.1063/1.1635076 (3 pages) | Cited 118 times

Online Publication Date: 17 December 2003

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A high-reflectivity bottom anode is essential for high-performance top-emitting organic light-emitting devices (OLEDs). Ag has the highest reflectivity for visible light among all metals, yet its electronic properties are not ideal for anodes of OLEDs. In this letter, we report that by inducing a thin silver oxide at the surface of Ag, hole injection from Ag anodes into OLEDs is largely enhanced yet with rather high reflectivity retained. Top-emitting devices using such surface-modified Ag anode show device characteristics competitive with those of a bottom-emitting device using the indium tin oxide anode. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
81.65.Mq Oxidation

Voltage tunable two-color infrared detection using semiconductor superlattices

Amlan Majumdar, K. K. Choi, J. L. Reno, and D. C. Tsui

Appl. Phys. Lett. 83, 5130 (2003); http://dx.doi.org/10.1063/1.1635981 (3 pages) | Cited 10 times

Online Publication Date: 17 December 2003

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We demonstrate a voltage tunable two-color quantum-well infrared photodetector (QWIP) that consists of multiple periods of two distinct AlGaAs/GaAs superlattices separated by AlGaAs blocking barriers on one side and heavily doped GaAs layers on the other side. The detection peak switches from 9.5 μm under large positive bias to 6 μm under negative bias. The background-limited temperature is 55 K for 9.5 μm detection and 80 K for 6 μm detection. We also demonstrate that the corrugated-QWIP geometry is suitable for coupling normally incident light into the detector. © 2003 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.67.De Quantum wells
73.63.Hs Quantum wells
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials

Continuous wave optically pumped lead-salt mid-infrared quantum-well vertical-cavity surface-emitting lasers

F. Zhao, H. Wu, A. Majumdar, and Z. Shi

Appl. Phys. Lett. 83, 5133 (2003); http://dx.doi.org/10.1063/1.1636246 (3 pages) | Cited 8 times

Online Publication Date: 17 December 2003

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Continuous wave optically pumped mid-infrared lead-salt quantum-well vertical-cavity surface-emitting lasers with an eleven-period PbSe/PbSrSe quantum-well active region are demonstrated. The cw emissions are observed up to 230 K at the emission wavelengths around 4.03 μm. The lowest threshold pump density of 2.6 kW/cm2 appears at 190 K, 65 °C lower than that of the pulsed measurements. This indicates the temperature difference between the active region and the heat sink of the episide-up mounted on-wafer testing under cw pumping. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.60.By Design of specific laser systems

Cavity-length effects of high-temperature high-power continuous-wave characteristics in quantum-cascade lasers

J. S. Yu, A. Evans, J. David, L. Doris, S. Slivken, and M. Razeghi

Appl. Phys. Lett. 83, 5136 (2003); http://dx.doi.org/10.1063/1.1634689 (3 pages) | Cited 11 times

Online Publication Date: 17 December 2003

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We report the cavity-length dependent high-temperature high-power cw characteristics in λ=6 μm quantum-cascade lasers with a thick electroplated Au top contact layer. For a high-reflectivity (HR) coated 15 μm wide and 3 mm long laser, the cw operation is achieved up to 313 K (40 °C) with an output power of 17 mW. At 298 K, a very high cw output power of 213 mW is obtained for a HR coated 15 μm wide and 4 mm long laser. Thermal resistance is analyzed at temperatures above 283 K for HR coated lasers with different cavities. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Realization of waveguiding epitaxial GaN layers on Si by low-pressure metalorganic vapor phase epitaxy

H. P. D. Schenk, E. Feltin, M. Laügt, O. Tottereau, P. Vennéguès, and E. Doghèche

Appl. Phys. Lett. 83, 5139 (2003); http://dx.doi.org/10.1063/1.1635075 (3 pages) | Cited 1 time

Online Publication Date: 17 December 2003

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Waveguiding GaN epitaxial layers have been grown by low-pressure metalorganic vapor phase epitaxy on Si(111) substrates using AlN/GaN short period-superlattice (SPS) buffer layer systems. The AlN/GaN SPS has been studied by x-ray diffraction where it appears as pseudoternary AlxGa1−xN alloy. Using elastic theory an effective Al content of 44% is calculated. This value is confirmed by the average Al content calculated from the AlN:GaN layer thickness ratio measured in cross-section transmission electron microscopy. The GaN waveguiding properties have been assessed using the prism coupling method. They sensibly improve with the total thickness of the underlying AlN/GaN superlattice as well as if an additional AlN/GaN SPS is grown atop the GaN waveguiding layer. © 2003 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
68.37.Lp Transmission electron microscopy (TEM)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Terahertz quantum-cascade laser operating up to 137 K

Benjamin S. Williams, Sushil Kumar, Hans Callebaut, Qing Hu, and John L. Reno

Appl. Phys. Lett. 83, 5142 (2003); http://dx.doi.org/10.1063/1.1635657 (3 pages) | Cited 53 times

Online Publication Date: 17 December 2003

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We report operation of a terahertz quantum-cascade laser at 3.8 THz (λ ≈ 79 μm) up to a heat-sink temperature of 137 K. A resonant phonon depopulation design was used with a low-loss metal–metal waveguide, which provided a confinement factor of nearly unity. A threshold current density of 625 A/cm2 was obtained in pulsed mode at 5 K. Devices fabricated using a conventional semi-insulating surface-plasmon waveguide lased up to 92 K with a threshold current density of 670 A/cm2 at 5 K. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Surface-relief diffraction gratings based on selective etching of periodically poled lithium niobate

J. Capmany, C. R. Fernández-Pousa, E. Diéguez, and V. Bermúdez

Appl. Phys. Lett. 83, 5145 (2003); http://dx.doi.org/10.1063/1.1636535 (3 pages) | Cited 5 times

Online Publication Date: 17 December 2003

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This work reports the use of selective etching in a periodically poled crystal of LiNbO3 (MgO):Yb3+ to engineer a surface-relief diffraction grating. A 35.1%–64.9% fill factor (domain duty cycle) grating with a 6.86 μm domain period is presented. The diffraction grating created provides a simple tool for accurate characterization of domain size and structure homogeneity. Following a similar process, arbitrary surface-relief two-level binary diffractive optical elements can be patterned in domain-engineered lithium niobate crystals. © 2003 American Institute of Physics.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.Dj Gratings
81.65.Cf Surface cleaning, etching, patterning
42.70.Mp Nonlinear optical crystals
68.35.B- Structure of clean surfaces (and surface reconstruction)
77.80.Dj Domain structure; hysteresis
42.86.+b Optical workshop techniques

Polarization switching in composite-resonator vertical-cavity lasers

D. M. Grasso and K. D. Choquette

Appl. Phys. Lett. 83, 5148 (2003); http://dx.doi.org/10.1063/1.1636266 (3 pages) | Cited 2 times

Online Publication Date: 17 December 2003

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We report polarization switching in a monolithic dual-resonator vertical-cavity laser. The light output from the top ion-implanted cavity under forward bias above threshold is partitioned into two orthogonal polarizations of the fundamental transverse mode. A reverse bias of sufficient magnitude applied to the bottom oxide-confined cavity causes the abrupt suppression of the dominant polarization and simultaneous emergence of the orthogonal polarization. We find that the electro-optic birefringence of the two polarizations increases with increasing reverse bias. We show that the mechanism of the polarization switch is consistent with wavelength-dependent loss from electroabsorption in the reverse-biased quantum wells of the oxide-confined cavity. © 2003 American Institute of Physics.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.25.Ja Polarization

Modulation of light by light in silicon-on-insulator waveguides

S. Stepanov and S. Ruschin

Appl. Phys. Lett. 83, 5151 (2003); http://dx.doi.org/10.1063/1.1636518 (3 pages) | Cited 9 times

Online Publication Date: 17 December 2003

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We report infrared light modulation based on direct free-carrier absorption induced by visible light irradiation in silicon-on-insulator waveguides. An amplitude modulation depth of 96% and 89% was measured for waveguide light carrier at a wavelength of 1.55 and 1.32 μm. The frequency dependence of the modulation effect was measured as well. © 2003 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays

Fast response wide viewing angle liquid crystal cell with double-side fringe-field switching

C. Y. Xiang, X. W. Sun, and X. J. Yin

Appl. Phys. Lett. 83, 5154 (2003); http://dx.doi.org/10.1063/1.1635982 (3 pages) | Cited 11 times

Online Publication Date: 17 December 2003

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A four-electrode liquid crystal cell, featuring a double-side fringe-field switching, has been designed with two-layer electrodes on both glass substrates. The two-layer electrode is the same as that used in fringe-field switching liquid crystal displays. Using a negative dielectric liquid crystal, a homogeneous cell has been fabricated with top and bottom stripe electrodes perpendicular to each other. The fringe fields near top and bottom surfaces drive the homogeneous liquid crystal layer to a twisted structure. The distributions of electric field and molecular director are obtained by theoretical analysis. The double-side fringe-field switching cell shows a much faster response and wider viewing cone compared to traditional fringe-field switching one. The improved electro-optical properties are due to the wider and more symmetric director distribution with respect to the midplane of the liquid crystal cell. © 2003 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices
85.60.Pg Display systems
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InN island shape and its dependence on growth condition of molecular-beam epitaxy

Y. G. Cao, M. H. Xie, Y. Liu, Y. F. Ng, H. S. Wu, and S. Y. Tong

Appl. Phys. Lett. 83, 5157 (2003); http://dx.doi.org/10.1063/1.1635077 (3 pages) | Cited 24 times

Online Publication Date: 17 December 2003

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During molecular-beam epitaxy of InN films on GaN(0001) surface, three-dimensional (3D) islands are observed following an initial wetting layer formation. Depending on deposition condition, the 3D islands take different shapes. Pyramidal islands form when excess nitrogen fluxes are used, whereas pillar-shaped islands are obtained when excess indium fluxes are employed. The pillar-shaped islands are identified to represent the equilibrium shape, whereas the pyramidal ones are limited by kinetics. As the size of islands increases, their aspect ratio shows a decreasing trend, which is attributed to a gradual relaxation of strain in the layer by defects. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.A- Nucleation and growth
81.05.Ea III-V semiconductors

Near-equilibrium strain relaxation and misfit dislocation interactions in PbTe on PbSe (001) heteroepitaxy

Karin Wiesauer and Gunther Springholz

Appl. Phys. Lett. 83, 5160 (2003); http://dx.doi.org/10.1063/1.1633675 (3 pages) | Cited 4 times

Online Publication Date: 17 December 2003

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Strain relaxation of PbTe layers on PbSe (001) by misfit dislocation formation is shown to take place near equilibrium without kinetic barriers. A comparison of the experimental data with different strain relaxation models shows that mutual dislocation interactions are of crucial importance for the strain relaxation process. This results in faster relaxation than predicted by the models for noninteracting dislocation arrays. © 2003 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
61.72.Yx Interaction between different crystal defects; gettering effect
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.Lk Linear defects: dislocations, disclinations
81.40.Jj Elasticity and anelasticity, stress-strain relations

Band structure and fundamental optical transitions in wurtzite AlN

J. Li, K. B. Nam, M. L. Nakarmi, J. Y. Lin, H. X. Jiang, Pierre Carrier, and Su-Huai Wei

Appl. Phys. Lett. 83, 5163 (2003); http://dx.doi.org/10.1063/1.1633965 (3 pages) | Cited 99 times

Online Publication Date: 17 December 2003

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With a recently developed unique deep ultraviolet picoseconds time-resolved photoluminescence (PL) spectroscopy system and improved growth technique, we are able to determine the detailed band structure near the Γ point of wurtzite (WZ) AlN with a direct band gap of 6.12 eV. Combined with first-principles band structure calculations we show that the fundamental optical properties of AlN differ drastically from that of GaN and other WZ semiconductors. The discrepancy in energy band gap values of AlN obtained previously by different methods is explained in terms of the optical selection rules in AlN and is confirmed by measurement of the polarization dependence of the excitonic PL spectra. © 2003 American Institute of Physics.
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71.20.Nr Semiconductor compounds
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
71.15.-m Methods of electronic structure calculations
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Effect of hydrogen and deuterium on the microstructure of amorphous Si solar cell material

E. Sutter and D. L. Williamson

Appl. Phys. Lett. 83, 5166 (2003); http://dx.doi.org/10.1063/1.1633968 (3 pages)

Online Publication Date: 17 December 2003

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We investigate hydrogenated and deuterated amorphous Si (a-Si:H and a-Si:D) solar cell material, prepared under conditions of high hydrogen and deuterium dilution, respectively. Using cross-sectional transmission electron microscopy, we provide direct observation of the microstructure of these materials. We observe that the high hydrogen dilution results in homogeneous a-Si:H material with no evidence of microvoids. In contrast, the replacement of hydrogen with deuterium produces a heterogeneous mixture of amorphous and microcrystalline material. The amorphous phase contains significant numbers of microvoids or low-density deuterium-rich domains. The observed heterogeneity is related to the effect of the substitution of hydrogen with deuterium on the microstructure of the Si film. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
61.43.Dq Amorphous semiconductors, metals, and alloys

Large optical nonlinearities in BiMnO3 thin films

Alok Sharan, Ilsin An, Chi Chen, Robert W. Collins, James Lettieri, Yunfa Jia, Darrell G. Schlom, and Venkatraman Gopalan

Appl. Phys. Lett. 83, 5169 (2003); http://dx.doi.org/10.1063/1.1632544 (3 pages) | Cited 17 times

Online Publication Date: 17 December 2003

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Large third-order optical nonlinearities were observed in epitaxial thin films of BiMnO3 grown on SrTiO3 substrates. Using 140 fs laser pulses at 900 nm, a negative nonlinear refractive index (nI ∼ −0.53 cm2/GW) and a nonlinear absorption coefficient (αI ∼ −0.08 cm/kW) for BiMnO3 are measured at room temperature. Large electric-field-induced enhancement of three to four orders of magnitude in the second-harmonic response at 450 nm is observed with effective nonlinear coefficients of deff ∼ 40(115) pm/V at 300 (473) K under applied fields of ∼707 (177) V/mm, respectively, from a 110 nm multivariant thin film. © 2003 American Institute of Physics.
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42.70.Mp Nonlinear optical crystals
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Nk Insulators
78.20.Jq Electro-optical effects

Three-dimensional dielectric network structures with large photonic band gaps

Martin Maldovan, W. Craig Carter, and Edwin L. Thomas

Appl. Phys. Lett. 83, 5172 (2003); http://dx.doi.org/10.1063/1.1635664 (3 pages) | Cited 4 times

Online Publication Date: 17 December 2003

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Several three-dimensional dielectric network structures possessing large photonic band gaps are presented. Two of these photonic crystals show gaps as large as 26% of the midgap frequency for a refractive index contrast 3.6:1. Four of the proposed structures consist of three-connected networks and a fifth structure has a mixture of three- and four-connected nodes. The realization of these structures using block polymer self-assembly, interference lithography and layer-by-layer lithography is briefly discussed. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials

Limit of the Rayleigh scattering loss in silica fiber

K. Saito, M. Yamaguchi, H. Kakiuchida, A. J. Ikushima, K. Ohsono, and Y. Kurosawa

Appl. Phys. Lett. 83, 5175 (2003); http://dx.doi.org/10.1063/1.1635072 (3 pages) | Cited 10 times

Online Publication Date: 17 December 2003

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The limit of the Rayleigh scattering and total losses in silica fiber was determined from the results of the Rayleigh scattering and structural relaxation measurements. Annealing condition during fiber drawing was optimized, and much potential to reduce the Rayleigh scattering loss has been verified. Total loss can be reduced below 0.15 dB/km at 1.55 μm, for example, even when annealing time is 0.1 s. Total loss below 0.14 dB/km can be realized by increasing the annealing time. © 2003 American Institute of Physics.
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42.81.Dp Propagation, scattering, and losses; solitons
81.40.Tv Optical and dielectric properties related to treatment conditions
81.40.Gh Other heat and thermomechanical treatments
78.35.+c Brillouin and Rayleigh scattering; other light scattering
81.05.Kf Glasses (including metallic glasses)

In surface segregation in M-plane (In,Ga)N/GaN multiple quantum well structures

Yue Jun Sun, Oliver Brandt, Bernd Jenichen, and Klaus H. Ploog

Appl. Phys. Lett. 83, 5178 (2003); http://dx.doi.org/10.1063/1.1635661 (3 pages) | Cited 7 times

Online Publication Date: 17 December 2003

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We investigate the composition profile of M-plane (In,Ga)N/GaN(1math00) multiple quantum well structures by both high-resolution x-ray diffractometry and secondary ion mass spectrometry. The results reveal significant In surface segregation, resulting in a reduced In content and much wider wells than intended. The resulting In content of ∼ 7% is lower than that obtained ( ∼ 15%) for corresponding C-plane structures grown under identical conditions, suggesting a lower In incorporation efficiency on the (1math00) plane compared to the (0001) plane. Finally, the dependence of the transition energies on the well thickness of these M-plane quantum wells evidences the absence of internal electrostatic fields along the growth direction. © 2003 American Institute of Physics.
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68.35.Dv Composition, segregation; defects and impurities
68.65.Fg Quantum wells

Robust self-assembled monolayer as diffusion barrier for copper metallization

Noboru Mikami, Nobuhiro Hata, Takamaro Kikkawa, and Hideaki Machida

Appl. Phys. Lett. 83, 5181 (2003); http://dx.doi.org/10.1063/1.1635665 (3 pages) | Cited 12 times

Online Publication Date: 17 December 2003

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Excellent results on copper (Cu) diffusion barrier characteristics of a self-assembled monolayer (SAM) of 2-(diphenylphosphino)ethyltriethoxy-silane are reported. The thickness and roughness of the SAM were determined by grazing incidence x-ray reflectometry as 1.7 and 0.3 nm, respectively. To evaluate Cu diffusion barrier performance of the SAM, Cu/SiO2/Si and Cu/SAM/SiO2/Si metal-oxide-semiconductor capacitors were prepared to measure their lifetimes under the 2 MV/cm electric bias at 498–548 K. The mean times to failure obtained from the Weibull plots of time to failures were 33.6, 9.24, 4.57, and 2.03 h at 498, 523, 533 and 548 K, respectively. These values show that the barrier characteristic of the SAM of 1.7 nm in thickness is comparable to that of physical-vapor-deposited Ta film of 20 nm in thickness. The estimated lifetime of the SAM barrier at the device operation temperature of 392 K is longer than 10 yr. © 2003 American Institute of Physics.
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68.47.Pe Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces
77.84.Jd Polymers; organic compounds
77.55.-g Dielectric thin films
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
84.32.Tt Capacitors
85.40.Ls Metallization, contacts, interconnects; device isolation
66.30.-h Diffusion in solids
68.35.Fx Diffusion; interface formation

Rapid growth of evanescent wave by a silver superlens

Zhaowei Liu, Nicholas Fang, Ta-Jen Yen, and Xiang Zhang

Appl. Phys. Lett. 83, 5184 (2003); http://dx.doi.org/10.1063/1.1636250 (3 pages) | Cited 70 times

Online Publication Date: 17 December 2003

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Recent theoretical work suggested the possibility of constructing a super-resolution diffraction-free lens by using a negative refractive index medium (NRIM). The key proposition is that evanescent waves can be greatly enhanced by increasing the thickness of the NRIM. We report here experimental evidence that confirms that the transmission of evanescent waves rapidly grows with the film thickness up to about 50 nm, after which it decays as loss becomes significant. These findings represent the first step toward the understanding and realization of a diffraction-free lens. © 2003 American Institute of Physics.
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42.79.Bh Lenses, prisms and mirrors
81.05.Bx Metals, semimetals, and alloys
42.79.Wc Optical coatings
78.66.Bz Metals and metallic alloys
42.25.Bs Wave propagation, transmission and absorption
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Slip systems and misfit dislocations in InGaN epilayers

S. Srinivasan, L. Geng, R. Liu, F. A. Ponce, Y. Narukawa, and S. Tanaka

Appl. Phys. Lett. 83, 5187 (2003); http://dx.doi.org/10.1063/1.1633029 (3 pages) | Cited 53 times

Online Publication Date: 17 December 2003

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We have studied the microstructure of InGaN layers grown on two different GaN substrates: a standard GaN film on sapphire and an epitaxial lateral overgrown GaN (ELOG) structure. These two materials exhibit two distinct mechanisms of strain relaxation. InGaN epilayers on GaN are typically pseudomorphic and undergo elastic relaxation by the opening of threading dislocations into pyramidal pits. A different behavior occurs in the case of epitaxy on ELOG where, in the absence of threading dislocations, slip occurs with the formation of periodic arrays of misfit dislocations. Potential slip systems responsible for this behavior have been analyzed using the Matthews-Blakeslee model and taking into account the Peierls forces. This letter presents a comprehensive analysis of slip systems in the wurtzite structure and considers the role of threading dislocations in strain relaxation in InGaN alloys. © 2003 American Institute of Physics.
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61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Lk Linear defects: dislocations, disclinations

Generation of ultrahigh pressure using single-crystal chemical-vapor-deposition diamond anvils

Wendy L. Mao, Ho-kwang Mao, Chih-shiue Yan, Jinfu Shu, Jingzhu Hu, and Russell J. Hemley

Appl. Phys. Lett. 83, 5190 (2003); http://dx.doi.org/10.1063/1.1636270 (3 pages) | Cited 5 times

Online Publication Date: 17 December 2003

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Two experiments were conducted compressing Ta, Re, Pt, and an Fe-Si alloy to ultrahigh pressures using single-crystal chemical vapor deposition (CVD) and natural diamonds. In situ energy-dispersive and angle-dispersive x-ray diffraction were used to determine pressure from known equations of state. We demonstrate that CVD diamonds can be used in diamond anvil cells to reach pressures of nearly 200 GPa. © 2003 American Institute of Physics.
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07.35.+k High-pressure apparatus; shock tubes; diamond anvil cells
81.05.U- Carbon/carbon-based materials
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
62.50.-p High-pressure effects in solids and liquids

Two types of structures for the GaAs(001)-c(4×4) surface

Akihiro Ohtake and Nobuyuki Koguchi

Appl. Phys. Lett. 83, 5193 (2003); http://dx.doi.org/10.1063/1.1635078 (3 pages) | Cited 22 times

Online Publication Date: 17 December 2003

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Scanning tunneling microscopy, reflectance difference spectroscopy, and x-ray photoelectron spectroscopy have been used to study the atomic structures of the As-stabilized GaAs(001)-c(4×4) surface. We found that the c(4×4) surfaces are classified into two phases of α (Ga–As dimer structure) and β (As–As dimer structure). While the α phase is obtained by heating the β phase under As fluxes, we found that the structural change from β to α is kinetically-limited. © 2003 American Institute of Physics.
Show PACS
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Rh Phase transitions and critical phenomena
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
79.60.Bm Clean metal, semiconductor, and insulator surfaces
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