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22 Dec 2003

Volume 83, Issue 25, pp. 5121-5321

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 5310 (2003); http://dx.doi.org/10.1063/1.1635070 (3 pages)

Z. G. Chiragwandi, O. Nur, M. Willander, and N. Calander
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Evolution of crystallographic ordering in Hf1−xAlxOy high-κ dielectric deposited by atomic layer deposition

C. Wiemer, M. Fanciulli, B. Crivelli, G. Pavia, and M. Alessandri

Appl. Phys. Lett. 83, 5271 (2003); http://dx.doi.org/10.1063/1.1635962 (3 pages) | Cited 9 times

Online Publication Date: 17 December 2003

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The evolution of the morphology and of the crystallographic ordering of hafnium aluminates deposited by atomic layer deposition has been investigated. Annealing at temperatures as high as 900 °C in N2 or O2 atmosphere is found to promote crystallization of the high-κ layer, together with the growth of an interfacial low-κ oxide. The crystallographic phase has been identified by indexation of transmission electron microscopy selected area diffraction patterns and by Rietveld refinement of grazing incidence x-ray diffractograms. The high κ is found to crystallize in an orthorhombic ternary Hf1−xAlxO2 phase even for an Al content as high as x = 0.74. The temperature of crystallization is higher for the Al-richer alloy. The thickness and the electronic density of the interfacial layer are evaluated by combining cross-sectional transmission electron microscopy and x-ray reflectivity analysis. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
77.22.Ch Permittivity (dielectric function)
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
61.72.Cc Kinetics of defect formation and annealing
68.37.Lp Transmission electron microscopy (TEM)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Relative dielectric constant of epitaxial BaTiO3 thin films in the GHz frequency range

T. Hamano, D. J. Towner, and B. W. Wessels

Appl. Phys. Lett. 83, 5274 (2003); http://dx.doi.org/10.1063/1.1635967 (3 pages) | Cited 11 times

Online Publication Date: 17 December 2003

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The relative dielectric constant of epitaxial BaTiO3 thin films deposited on MgO was determined over the frequency range from 0.05 to 40.05 GHz. Coplanar stripline waveguides were formed on the BaTiO3 films and the dielectric constant was determined by matching the reflection (S11-) parameter by measurement with that by simulation. The dielectric constants were ∼2200 and ∼500 at <1 and 40 GHz, respectively. The frequency response of the dielectric constant is well described by a Curie–von Schweidler power law with an exponent of 0.29. The effective index of the coplanar stripline structure on the BaTiO3 film and MgO substrate was 3.6. © 2003 American Institute of Physics.
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77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
84.40.Az Waveguides, transmission lines, striplines
77.80.-e Ferroelectricity and antiferroelectricity
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Particle size dependent x-ray linewidth of rhombohedral phase in Pb(Zn1/3Nb2/3)O3–(6,7)%PbTiO3

K. K. Rajan and L. C. Lim

Appl. Phys. Lett. 83, 5277 (2003); http://dx.doi.org/10.1063/1.1635965 (3 pages) | Cited 7 times

Online Publication Date: 17 December 2003

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The full-width-at-half maximum (FWHM) of rhombohedral (002)R x-ray diffraction peak as a function of particle size in Pb(Zn1/3Nb2/3)O3–(6,7)%PbTiO3 [PZN–(6,7)%PT] solid solutions has been investigated. The sharpest (002)R peak, which has a FWHM of 0.10°–0.12°, was obtained from powder samples of intermediate particle sizes of about 120 μm. The broad (002)R peak typically observed in PZN–PT single crystal plates and coarse powder samples is the result of trapped metastable phases and, to a lesser extent, the transformation stresses/strains in the material. The increased FWHM at particle sizes <60 μm, on the other hand, can be attributed to crystal defects and, possibly, freshly formed metastable phases induced by the sample pulverization process. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.30.Dz Phase diagrams of other materials
64.60.My Metastable phases
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Electrical transport in boron nanowires

Dawei Wang, Jia G. Lu, Carolyn Jones Otten, and William E. Buhro

Appl. Phys. Lett. 83, 5280 (2003); http://dx.doi.org/10.1063/1.1630380 (3 pages) | Cited 36 times

Online Publication Date: 17 December 2003

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Electrical transport is studied in crystalline boron nanowires, using Ni and Ti as the contact electrodes, in which Ni forms ohmic contact and Ti forms Schottky-barrier junction. Three-terminal electrical measurements demonstrate p-type semiconductor behavior with estimated carrier mobility of 10−3 cm2/V s. The conductivities in annealed devices are on the order of 10−2 (Ω cm)−1. At 4.2 K, the I-V shows low conductance at low bias voltage, and increases exponentially beyond a threshold electric field close to 105 V/cm. We attribute this behavior to electric-field-induced impact ionization. © 2003 American Institute of Physics.
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73.63.Nm Quantum wires
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
61.46.-w Structure of nanoscale materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si

S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, C. W. Liu, T. Y. Chien, and C. T. Chia

Appl. Phys. Lett. 83, 5283 (2003); http://dx.doi.org/10.1063/1.1635073 (3 pages) | Cited 29 times

Online Publication Date: 17 December 2003

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Nanorings with an average height and diameter of 1.2 and 65 nm, respectively, were observed to form in Si-capped Ge quantum dots grown at 600 °C by ultrahigh-vacuum chemical vapor deposition. The nanorings were captured with the rapid cooling of the samples with appropriate amount of Si capping. Based on the results of transmission electron microscopy and Raman spectroscopy, the formation of nanorings is attributed to alloying and strain relief in the Si/Ge/(001)Si system. The self-assembly of nanorings provides a useful scheme to form ultrasmall ring-like structure and facilitates the characterization of the physical properties of unconventional quantum structures. © 2003 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
81.07.Ta Quantum dots
78.67.Hc Quantum dots
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.30.Am Elemental semiconductors and insulators
68.37.Lp Transmission electron microscopy (TEM)
61.46.-w Structure of nanoscale materials

Parallel writing by local oxidation nanolithography with submicrometer resolution

Massimiliano Cavallini, Paolo Mei, Fabio Biscarini, and Ricardo García

Appl. Phys. Lett. 83, 5286 (2003); http://dx.doi.org/10.1063/1.1633685 (3 pages) | Cited 32 times

Online Publication Date: 17 December 2003

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We demonstrate that the process of local oxidation of surfaces by atomic force microscopy (AFM) can be upscaled in a straightforward way by using a solid support with multiple protrusions as the cathode electrode. A metallized digital video disk DVD polymeric support has been used as a stamp to generate an array of features of variable length and 100 nm in width on a silicon surface covering a 5×6 mm2 region. The parallel patterning process involves the formation of as many liquid bridges as there are protrusions in the stamp. The growth rate of the parallel local oxides is slightly smaller than the one obtained by AFM experiments. Nonetheless, results from AFM local oxidation experiments can be readily extended to parallel oxidation which in turn opens the possibility of patterning centimeter-square regions with 10 nm motives. © 2003 American Institute of Physics.
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81.16.Nd Micro- and nanolithography
81.16.Pr Micro- and nano-oxidation
85.40.Hp Lithography, masks and pattern transfer
81.16.Ta Atom manipulation
81.65.Mq Oxidation

Structuring of self-assembled three-dimensional photonic crystals by direct electron-beam lithography

P. Ferrand, M. Egen, R. Zentel, J. Seekamp, S. G. Romanov, and C. M. Sotomayor Torres

Appl. Phys. Lett. 83, 5289 (2003); http://dx.doi.org/10.1063/1.1636271 (3 pages) | Cited 26 times

Online Publication Date: 17 December 2003

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An electron-beam lithography technique is described capable of structuring three-dimensional self-assembled photonic crystals. It is shown that the control of the writing depth can be achieved by varying the electron acceleration voltage. Microscopic structures with a depth from 0.4 up to 2 μm are fabricated with a typical lateral resolution of 0.4 μm. The relevance of this technique for the fabrication of deterministic defects sites in opal photonic crystals is discussed and its extension towards buried structures is suggested. © 2003 American Institute of Physics.
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81.16.Nd Micro- and nanolithography
81.16.Dn Self-assembly
85.40.Hp Lithography, masks and pattern transfer
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.86.+b Optical workshop techniques
61.72.-y Defects and impurities in crystals; microstructure
42.70.Qs Photonic bandgap materials

Dysprosium silicide nanowires on Si(110)

Zhian He, M. Stevens, David J. Smith, and P. A. Bennett

Appl. Phys. Lett. 83, 5292 (2003); http://dx.doi.org/10.1063/1.1636244 (3 pages) | Cited 34 times

Online Publication Date: 17 December 2003

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Dysprosium deposited on Si(110) at 720 °C is observed to form self-assembled silicide nanowire (NW) structures with a single orientation and average dimensions of 15 nm wide and microns long. The NW sides grow into the substrate along inclined Si{111} planes, forming a V-shaped cross section with an interface that is coherent on one side, described by DySi2(0001)//Si(11math) and DySi2[01math0]//Si[math10], and incoherent on the other. This type of growth represents a physical mechanism for self-assembled NW formation that does not require anisotropic lattice mismatch. © 2003 American Institute of Physics.
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81.16.Dn Self-assembly
61.46.-w Structure of nanoscale materials
68.65.La Quantum wires (patterned in quantum wells)
81.07.Vb Quantum wires

Efficient electron spin manipulation in a quantum well by an in-plane electric field

E. I. Rashba and Al. L. Efros

Appl. Phys. Lett. 83, 5295 (2003); http://dx.doi.org/10.1063/1.1635987 (3 pages) | Cited 36 times

Online Publication Date: 17 December 2003

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Electron spins in a semiconductor quantum well couple to an electric field via spin–orbit interaction. We show that the standard spin–orbit coupling mechanisms can provide extraordinarily efficient electron spin manipulation by an in-plane ac electric field. © 2003 American Institute of Physics.
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73.21.Fg Quantum wells
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Direct measurements of strain depth profiles in Ge/Si(001) nanostructures

D. W. Moon, H. I. Lee, B. Cho, Y. L. Foo, T. Spila, S. Hong, and J. E. Greene

Appl. Phys. Lett. 83, 5298 (2003); http://dx.doi.org/10.1063/1.1635074 (3 pages) | Cited 5 times

Online Publication Date: 17 December 2003

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Direct measurements of strain depth profiles in Ge layers consisting of either pyramidal or dome-shaped nanostructures grown on Si(001) by gas-source molecular-beam epitaxy were obtained using medium-energy ion scattering spectroscopy. Layers consisting solely of pyramidal Ge structures (corresponding to total Ge coverages θGe = 5.5 ML) exhibit a compressive strain of 2.1% which is uniform with depth. In contrast, Ge layers with a dome-shaped surface morphology (θGe = 8.9 ML) undergo significant relaxation giving rise to a strain gradient which varies from 0.6% at the surface to 2.1% at the Ge/Si(001) interface. © 2003 American Institute of Physics.
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62.25.-g Mechanical properties of nanoscale systems
68.60.Bs Mechanical and acoustical properties
68.47.Fg Semiconductor surfaces
68.35.Ct Interface structure and roughness
81.07.Bc Nanocrystalline materials
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Plasma coating of carbon nanofibers for enhanced dispersion and interfacial bonding in polymer composites

Donglu Shi, Jie Lian, Peng He, L. M. Wang, Feng Xiao, Ling Yang, Mark J. Schulz, and David B. Mast

Appl. Phys. Lett. 83, 5301 (2003); http://dx.doi.org/10.1063/1.1636521 (3 pages) | Cited 48 times

Online Publication Date: 17 December 2003

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Ultrathin films of polystyrene were deposited on the surfaces of carbon nanofibers using a plasma polymerization treatment. A small percent by weight of these surface-coated nanofibers were incorporated into polystyrene to form a polymer nanocomposite. The plasma coating greatly enhanced the dispersion of the nanofibers in the polymer matrix. High-resolution transmission-electron-microscopy (HRTEM) images revealed an extremely thin film of the polymer layer (∼3 nm) at the interface between the nanofiber and matrix. Tensile test results showed considerably increased strength in the coated nanofiber composite while an adverse effect was observed in the uncoated composites; the former exhibited shear yielding due to enhanced interfacial bonding while the latter fractured in a brittle fashion. © 2003 American Institute of Physics.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.07.De Nanotubes
52.77.Dq Plasma-based ion implantation and deposition

Hole trapping time measurement in low-temperature-grown gallium arsenide

R. Adomavičius, A. Krotkus, K. Bertulis, V. Sirutkaitis, R. Butkus, and A. Piskarskas

Appl. Phys. Lett. 83, 5304 (2003); http://dx.doi.org/10.1063/1.1632538 (3 pages) | Cited 9 times

Online Publication Date: 17 December 2003

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We study hole dynamics in GaAs layers grown by molecular-beam epitaxy at 270 °C by two-color pump-and-probe experiments employing femtosecond 800-nm-wavelength pulses for sample’s excitation and 9-μm-wavelength pulses for probing the induced intervalence band absorption. Hole trapping time in as-grown, undoped layer is equal to 2 ps; it increases after thermal annealing or Be doping, and decreases in Si-doped layer. The mechanism of the hole trapping is discussed; it is shown that experimental observations are consistent with the hole trapping at neutral arsenic antisites model. © 2003 American Institute of Physics.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors
71.20.Nr Semiconductor compounds

Self-aligned mechanical attachment of carbon nanotubes to silicon dioxide structures by selective silicon dioxide chemical-vapor deposition

Jed D. Whittaker, Markus Brink, Ghaleb A. Husseini, Matthew R. Linford, and Robert C. Davis

Appl. Phys. Lett. 83, 5307 (2003); http://dx.doi.org/10.1063/1.1636267 (3 pages) | Cited 6 times

Online Publication Date: 17 December 2003

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A self-aligned thin-film deposition technique was developed to mechanically attach carbon nanotubes to surfaces for the fabrication of structurally robust nanotube-based nanomechanical devices. Single-walled carbon nanotubes were grown by thermal chemical-vapor deposition (CVD) across 150-nm-wide SiO2 trenches. The nanotubes were mechanically attached to the trench tops by selective silicon tetraacetate-based SiO2 CVD. No film was deposited on the nanotubes where they were suspended across the trenches. © 2003 American Institute of Physics.
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81.07.De Nanotubes
85.35.Kt Nanotube devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.46.-w Structure of nanoscale materials
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dc characteristics of a nanoscale water-based transistor

Z. G. Chiragwandi, O. Nur, M. Willander, and N. Calander

Appl. Phys. Lett. 83, 5310 (2003); http://dx.doi.org/10.1063/1.1635070 (3 pages) | Cited 5 times

Online Publication Date: 17 December 2003

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We demonstrate a nanoscale water-based transistor. The presented nanoscale water-based transistor relies on the controlled modification of the pH in deionized water through the base applied electric field. The dc characteristics are presented and studied with a focus on the influence of the base applied electric field, the base electrode design, and their proximity to the sensing emitter and collector nanoelectrodes. The demonstrated water-based nanoscale device is of interest for many bioelectrical applications due to the biocompatibility and the wide usage and presence of water in biological systems. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
85.35.-p Nanoelectronic devices
81.16.Nd Micro- and nanolithography

Photodetecting properties of ZnO-based thin-film transistors

H. S. Bae, M. H. Yoon, J. H. Kim, and Seongil Im

Appl. Phys. Lett. 83, 5313 (2003); http://dx.doi.org/10.1063/1.1633676 (3 pages) | Cited 57 times

Online Publication Date: 17 December 2003

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We report on the photodetecting properties of a ZnO-based thin-film transistor (TFT) that has been fabricated on a SiO2/p-Si substrate by rf magnetron sputtering at room temperature. Our ZnO-based TFT exhibited a saturation current level of about 6.5 μA under a gate bias of 40 V, decent electron mobility of 0.1 cm2/V s, and on/off current ratio of ∼ 106 in the dark. Illuminated by ultraviolet (λ = 340 nm), blue (λ = 450 nm), and green (λ = 540 nm) light with intensity of 0.7 mW/cm2, our TFT displays high photocurrent gain of 50, 32, and 15 μA, respectively, under a gate bias of 40 V. In the channel depletion state with gate bias of −30 V, the photodetecting sensitivity becomes much higher than in the accumulation state. It is thus concluded that our ZnO-based TFT can be a good UV photodetecting device as well as an electronic device. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
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Refractive-index-driven separation of colloidal polymer particles using optical chromatography

Sean J. Hart and Alex V. Terray

Appl. Phys. Lett. 83, 5316 (2003); http://dx.doi.org/10.1063/1.1635984 (3 pages) | Cited 43 times

Online Publication Date: 17 December 2003

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Separation of equivalently sized polystyrene, n = 1.59, poly(methylmethacrylate), n = 1.49, and silica, n = 1.43, beads has been accomplished using optical chromatography. The optical separations were performed using a glass flowcell that permits the optical trapping laser to be lightly focused into the fluid pathway against the fluid flow. Separation occurs due to the balance of fluid and optical forces; particles come to rest when the force due to the fluid flow equals the radiation pressure force. The ability to optically separate particles based upon their refractive index opens avenues for the characterization of colloidal samples based upon chemical characteristics, in addition to size. © 2003 American Institute of Physics.
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82.80.Bg Chromatography
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
82.70.Dd Colloids
87.80.Cc Optical trapping
37.10.Vz Mechanical effects of light on atoms, molecules, and ions
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FREE

Comment on “Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing” [Appl. Phys. Lett. 82, 4301 (2003)]

Yow-Jon Lin and Kuo-Chen Wu

Appl. Phys. Lett. 83, 5319 (2003); http://dx.doi.org/10.1063/1.1634693 (2 pages) | Cited 2 times

Online Publication Date: 17 December 2003

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Abstract Unavailable
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.65.Mq Oxidation
61.72.Cc Kinetics of defect formation and annealing
71.20.Nr Semiconductor compounds
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Response to “Comment on ‘Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing’ ” [Appl. Phys. Lett. 83, 5319 (2003)]

Chang Min Jeon and Jong-Lam Lee

Appl. Phys. Lett. 83, 5321 (2003); http://dx.doi.org/10.1063/1.1634694 (1 page)

Online Publication Date: 17 December 2003

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Abstract Unavailable
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.At Surface states, band structure, electron density of states
81.65.Mq Oxidation
73.20.Hb Impurity and defect levels; energy states of adsorbed species
61.72.Cc Kinetics of defect formation and annealing
79.60.Jv Interfaces; heterostructures; nanostructures
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