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22 Dec 2003

Volume 83, Issue 25, pp. 5121-5321

Appl. Phys. Lett. 83, 5310 (2003); http://dx.doi.org/10.1063/1.1635070 (3 pages)

Z. G. Chiragwandi, O. Nur, M. Willander, and N. Calander

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Comment on “Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing” [Appl. Phys. Lett. 82, 4301 (2003)]

Yow-Jon Lin and Kuo-Chen Wu

Appl. Phys. Lett. 83, 5319 (2003); http://dx.doi.org/10.1063/1.1634693 (2 pages) | Cited 2 times

Online Publication Date: 17 December 2003

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73.30.+y	Surface double layers, Schottky barriers, and work functions
73.40.Kp	III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.65.Mq	Oxidation
61.72.Cc	Kinetics of defect formation and annealing
71.20.Nr	Semiconductor compounds