APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

22 Dec 2003

Volume 83, Issue 25, pp. 5121-5321

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 5310 (2003); http://dx.doi.org/10.1063/1.1635070 (3 pages)

Z. G. Chiragwandi, O. Nur, M. Willander, and N. Calander
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

dc characteristics of a nanoscale water-based transistor

Z. G. Chiragwandi, O. Nur, M. Willander, and N. Calander

Appl. Phys. Lett. 83, 5310 (2003); http://dx.doi.org/10.1063/1.1635070 (3 pages) | Cited 5 times

Online Publication Date: 17 December 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate a nanoscale water-based transistor. The presented nanoscale water-based transistor relies on the controlled modification of the pH in deionized water through the base applied electric field. The dc characteristics are presented and studied with a focus on the influence of the base applied electric field, the base electrode design, and their proximity to the sensing emitter and collector nanoelectrodes. The demonstrated water-based nanoscale device is of interest for many bioelectrical applications due to the biocompatibility and the wide usage and presence of water in biological systems. © 2003 American Institute of Physics.
Show PACS
85.30.Tv Field effect devices
85.35.-p Nanoelectronic devices
81.16.Nd Micro- and nanolithography

Photodetecting properties of ZnO-based thin-film transistors

H. S. Bae, M. H. Yoon, J. H. Kim, and Seongil Im

Appl. Phys. Lett. 83, 5313 (2003); http://dx.doi.org/10.1063/1.1633676 (3 pages) | Cited 56 times

Online Publication Date: 17 December 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on the photodetecting properties of a ZnO-based thin-film transistor (TFT) that has been fabricated on a SiO2/p-Si substrate by rf magnetron sputtering at room temperature. Our ZnO-based TFT exhibited a saturation current level of about 6.5 μA under a gate bias of 40 V, decent electron mobility of 0.1 cm2/V s, and on/off current ratio of ∼ 106 in the dark. Illuminated by ultraviolet (λ = 340 nm), blue (λ = 450 nm), and green (λ = 540 nm) light with intensity of 0.7 mW/cm2, our TFT displays high photocurrent gain of 50, 32, and 15 μA, respectively, under a gate bias of 40 V. In the channel depletion state with gate bias of −30 V, the photodetecting sensitivity becomes much higher than in the accumulation state. It is thus concluded that our ZnO-based TFT can be a good UV photodetecting device as well as an electronic device. © 2003 American Institute of Physics.
Show PACS
85.30.Tv Field effect devices
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close