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22 Dec 2003

Volume 83, Issue 25, pp. 5121-5321

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 5310 (2003); http://dx.doi.org/10.1063/1.1635070 (3 pages)

Z. G. Chiragwandi, O. Nur, M. Willander, and N. Calander
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Role of Ga2O3 template thickness and gadolinium mole fraction in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks on GaAs

M. Passlack, N. Medendorp, R. Gregory, and D. Braddock

Appl. Phys. Lett. 83, 5262 (2003); http://dx.doi.org/10.1063/1.1635068 (3 pages) | Cited 29 times

Online Publication Date: 17 December 2003

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Amorphous GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks have been grown onto the GaAs(001) surface by molecular beam epitaxy using high temperature effusion cells. The Ga2O3 template thickness and the Gd mole percent have been systematically varied from 73 to 0 Å and from 8.8 to 22 at. % (0.088 ⩽ x ⩽ 0.22), respectively. Oxide/n-type GaAs samples have been characterized by high-frequency capacitance–voltage measurements. Optimum gate oxide stack and oxide/GaAs interface properties are obtained with a Ga2O3 template thickness of 9–11 Å and a minimum Gd mole percent of 15–17 at. %. While gate oxide films with thicker Ga2O3 templates and/or lower Gd mole fraction show kinks in capacitance–voltage measurements attributed to charge trapping in the oxide, thinner Ga2O3 templates lead to strong stretch-out of capacitance–voltage curves indicating severely degraded oxide/GaAs interface properties. © 2003 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

High-speed switching of nanoscale ferroelectric domains in congruent single-crystal LiTaO3

Kenjiro Fujimoto and Yasuo Cho

Appl. Phys. Lett. 83, 5265 (2003); http://dx.doi.org/10.1063/1.1635961 (3 pages) | Cited 23 times

Online Publication Date: 17 December 2003

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The nanodomain reversal characteristics of congruent LiTaO3 (CLT) single crystal are investigated. It is found that fast nanosecond domain switching can be achieved by reducing the sample thickness, even for CLT, which contains many Li vacancy defects that pin domain-wall movement. As an example, the authors obtain a polarization inverted domain dot with a radius of 7.9 nm by application of a 4 ns 10 V pulse. These results demonstrate that the speed of polarization reversal is closely related to the thickness of the medium. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Fm Switching phenomena
77.80.Dj Domain structure; hysteresis
85.50.Gk Non-volatile ferroelectric memories

Nonlinear behavior of piezoelectric lead zinc niobate–lead titanate single crystals under ac electric fields and dc bias

Wei Ren, Shi-Fang Liu, and Binu K. Mukherjee

Appl. Phys. Lett. 83, 5268 (2003); http://dx.doi.org/10.1063/1.1635069 (3 pages) | Cited 5 times

Online Publication Date: 17 December 2003

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The nonlinear behaviors of the dielectric and piezoelectric responses of 〈001〉 oriented Pb(Zn1/3Nb2/3)O3-xPbTiO3 (PZN-PT) single crystals for x = 4.5% and 8% have been investigated as a function of ac electric fields and dc bias fields. At relatively low applied fields, the polarization and strain of PZN-PT single crystals poled along the 〈001〉 direction show little hysteresis and have a linear dependence on the applied field, which is a consequence of engineered domain stability. Hence the dielectric and piezoelectric coefficients of the material do not exhibit any field dependence. However, when the applied electric field exceeds a threshold value, the strain and dielectric responses become nonlinear. The dielectric and piezoelectric constants are a function of the applied field, and hysteresis loops are observed. The results suggest that the observed nonlinear behavior in the PZN-PT single crystals is caused by domain motion/switching in response to the large ac fields. A positive dc bias effectively stabilizes the domain configuration in the crystals and enhances the linear response. The threshold field, at the onset of nonlinearity, is a linear function of the dc bias field in the field range investigated. © 2003 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
77.65.-j Piezoelectricity and electromechanical effects

Evolution of crystallographic ordering in Hf1−xAlxOy high-κ dielectric deposited by atomic layer deposition

C. Wiemer, M. Fanciulli, B. Crivelli, G. Pavia, and M. Alessandri

Appl. Phys. Lett. 83, 5271 (2003); http://dx.doi.org/10.1063/1.1635962 (3 pages) | Cited 9 times

Online Publication Date: 17 December 2003

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The evolution of the morphology and of the crystallographic ordering of hafnium aluminates deposited by atomic layer deposition has been investigated. Annealing at temperatures as high as 900 °C in N2 or O2 atmosphere is found to promote crystallization of the high-κ layer, together with the growth of an interfacial low-κ oxide. The crystallographic phase has been identified by indexation of transmission electron microscopy selected area diffraction patterns and by Rietveld refinement of grazing incidence x-ray diffractograms. The high κ is found to crystallize in an orthorhombic ternary Hf1−xAlxO2 phase even for an Al content as high as x = 0.74. The temperature of crystallization is higher for the Al-richer alloy. The thickness and the electronic density of the interfacial layer are evaluated by combining cross-sectional transmission electron microscopy and x-ray reflectivity analysis. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
77.22.Ch Permittivity (dielectric function)
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
61.72.Cc Kinetics of defect formation and annealing
68.37.Lp Transmission electron microscopy (TEM)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Relative dielectric constant of epitaxial BaTiO3 thin films in the GHz frequency range

T. Hamano, D. J. Towner, and B. W. Wessels

Appl. Phys. Lett. 83, 5274 (2003); http://dx.doi.org/10.1063/1.1635967 (3 pages) | Cited 11 times

Online Publication Date: 17 December 2003

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The relative dielectric constant of epitaxial BaTiO3 thin films deposited on MgO was determined over the frequency range from 0.05 to 40.05 GHz. Coplanar stripline waveguides were formed on the BaTiO3 films and the dielectric constant was determined by matching the reflection (S11-) parameter by measurement with that by simulation. The dielectric constants were ∼2200 and ∼500 at <1 and 40 GHz, respectively. The frequency response of the dielectric constant is well described by a Curie–von Schweidler power law with an exponent of 0.29. The effective index of the coplanar stripline structure on the BaTiO3 film and MgO substrate was 3.6. © 2003 American Institute of Physics.
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77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
84.40.Az Waveguides, transmission lines, striplines
77.80.-e Ferroelectricity and antiferroelectricity
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Particle size dependent x-ray linewidth of rhombohedral phase in Pb(Zn1/3Nb2/3)O3–(6,7)%PbTiO3

K. K. Rajan and L. C. Lim

Appl. Phys. Lett. 83, 5277 (2003); http://dx.doi.org/10.1063/1.1635965 (3 pages) | Cited 7 times

Online Publication Date: 17 December 2003

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The full-width-at-half maximum (FWHM) of rhombohedral (002)R x-ray diffraction peak as a function of particle size in Pb(Zn1/3Nb2/3)O3–(6,7)%PbTiO3 [PZN–(6,7)%PT] solid solutions has been investigated. The sharpest (002)R peak, which has a FWHM of 0.10°–0.12°, was obtained from powder samples of intermediate particle sizes of about 120 μm. The broad (002)R peak typically observed in PZN–PT single crystal plates and coarse powder samples is the result of trapped metastable phases and, to a lesser extent, the transformation stresses/strains in the material. The increased FWHM at particle sizes <60 μm, on the other hand, can be attributed to crystal defects and, possibly, freshly formed metastable phases induced by the sample pulverization process. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.30.Dz Phase diagrams of other materials
64.60.My Metastable phases
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