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22 Dec 2003

Volume 83, Issue 25, pp. 5121-5321

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Appl. Phys. Lett. 83, 5310 (2003); http://dx.doi.org/10.1063/1.1635070 (3 pages)

Z. G. Chiragwandi, O. Nur, M. Willander, and N. Calander
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Photonic crystal optical filter based on contra-directional waveguide coupling

Min Qiu, Mikaël Mulot, Marcin Swillo, Srinivasan Anand, Bozena Jaskorzynska, Anders Karlsson, Martin Kamp, and Alfred Forchel

Appl. Phys. Lett. 83, 5121 (2003); http://dx.doi.org/10.1063/1.1634373 (3 pages) | Cited 24 times

Online Publication Date: 17 December 2003

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Wavelength-selective operation of an optical filter (add/drop) based on a contra-directional photonic crystal waveguide coupler is demonstrated. The waveguides are defined as line defects in a two-dimensional triangular photonic crystal fabricated in an InP/GaInAsP heterostructure. The device is characterized using the end-fire method for the drop functionality. The experimental data are in good agreement with the theoretical results predicted by finite-difference time-domain simulations. © 2003 American Institute of Physics.
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42.79.Ci Filters, zone plates, and polarizers
42.82.Et Waveguides, couplers, and arrays
42.70.Qs Photonic bandgap materials
02.70.Bf Finite-difference methods

Observation of three-dimensional optical stacking of microparticles using a single Laguerre–Gaussian beam

W. M. Lee and X.-C. Yuan

Appl. Phys. Lett. 83, 5124 (2003); http://dx.doi.org/10.1063/1.1635079 (3 pages) | Cited 6 times

Online Publication Date: 17 December 2003

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Optical stacking of microparticles has been demonstrated earlier using a single focused Gaussian beam, multiple beams from Laguerre–Gaussian (LG) interference patterns, and Bessel beams. In this letter, we demonstrate that a single focused LG beam has the ability to optically stack multiple high-index microparticles around the intensity annular rings of the LG beam, and thus form a three-dimensional structure. Due to the symmetrically circular shape of the LG, we have been able to stack particles in a circular manner. Hence we propose that this technique of stacking can be extended to optical fields of designed shaped such that the stacking microparticles will be organized according to the shaped of the beam intensity. This is an alternative method to obtain a desired three-dimensional crystalline structure, where shaping the optical vortices beam is used instead of using multiple beams. © 2003 American Institute of Physics.
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37.10.Vz Mechanical effects of light on atoms, molecules, and ions

Top-emitting organic light-emitting devices using surface-modified Ag anode

Chieh-Wei Chen, Ping-Yuan Hsieh, Huo-Hsien Chiang, Chun-Liang Lin, Han-Ming Wu, and Chung-Chih Wu

Appl. Phys. Lett. 83, 5127 (2003); http://dx.doi.org/10.1063/1.1635076 (3 pages) | Cited 118 times

Online Publication Date: 17 December 2003

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A high-reflectivity bottom anode is essential for high-performance top-emitting organic light-emitting devices (OLEDs). Ag has the highest reflectivity for visible light among all metals, yet its electronic properties are not ideal for anodes of OLEDs. In this letter, we report that by inducing a thin silver oxide at the surface of Ag, hole injection from Ag anodes into OLEDs is largely enhanced yet with rather high reflectivity retained. Top-emitting devices using such surface-modified Ag anode show device characteristics competitive with those of a bottom-emitting device using the indium tin oxide anode. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
81.65.Mq Oxidation

Voltage tunable two-color infrared detection using semiconductor superlattices

Amlan Majumdar, K. K. Choi, J. L. Reno, and D. C. Tsui

Appl. Phys. Lett. 83, 5130 (2003); http://dx.doi.org/10.1063/1.1635981 (3 pages) | Cited 10 times

Online Publication Date: 17 December 2003

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We demonstrate a voltage tunable two-color quantum-well infrared photodetector (QWIP) that consists of multiple periods of two distinct AlGaAs/GaAs superlattices separated by AlGaAs blocking barriers on one side and heavily doped GaAs layers on the other side. The detection peak switches from 9.5 μm under large positive bias to 6 μm under negative bias. The background-limited temperature is 55 K for 9.5 μm detection and 80 K for 6 μm detection. We also demonstrate that the corrugated-QWIP geometry is suitable for coupling normally incident light into the detector. © 2003 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.67.De Quantum wells
73.63.Hs Quantum wells
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials

Continuous wave optically pumped lead-salt mid-infrared quantum-well vertical-cavity surface-emitting lasers

F. Zhao, H. Wu, A. Majumdar, and Z. Shi

Appl. Phys. Lett. 83, 5133 (2003); http://dx.doi.org/10.1063/1.1636246 (3 pages) | Cited 8 times

Online Publication Date: 17 December 2003

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Continuous wave optically pumped mid-infrared lead-salt quantum-well vertical-cavity surface-emitting lasers with an eleven-period PbSe/PbSrSe quantum-well active region are demonstrated. The cw emissions are observed up to 230 K at the emission wavelengths around 4.03 μm. The lowest threshold pump density of 2.6 kW/cm2 appears at 190 K, 65 °C lower than that of the pulsed measurements. This indicates the temperature difference between the active region and the heat sink of the episide-up mounted on-wafer testing under cw pumping. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.60.By Design of specific laser systems

Cavity-length effects of high-temperature high-power continuous-wave characteristics in quantum-cascade lasers

J. S. Yu, A. Evans, J. David, L. Doris, S. Slivken, and M. Razeghi

Appl. Phys. Lett. 83, 5136 (2003); http://dx.doi.org/10.1063/1.1634689 (3 pages) | Cited 11 times

Online Publication Date: 17 December 2003

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We report the cavity-length dependent high-temperature high-power cw characteristics in λ=6 μm quantum-cascade lasers with a thick electroplated Au top contact layer. For a high-reflectivity (HR) coated 15 μm wide and 3 mm long laser, the cw operation is achieved up to 313 K (40 °C) with an output power of 17 mW. At 298 K, a very high cw output power of 213 mW is obtained for a HR coated 15 μm wide and 4 mm long laser. Thermal resistance is analyzed at temperatures above 283 K for HR coated lasers with different cavities. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Realization of waveguiding epitaxial GaN layers on Si by low-pressure metalorganic vapor phase epitaxy

H. P. D. Schenk, E. Feltin, M. Laügt, O. Tottereau, P. Vennéguès, and E. Doghèche

Appl. Phys. Lett. 83, 5139 (2003); http://dx.doi.org/10.1063/1.1635075 (3 pages) | Cited 1 time

Online Publication Date: 17 December 2003

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Waveguiding GaN epitaxial layers have been grown by low-pressure metalorganic vapor phase epitaxy on Si(111) substrates using AlN/GaN short period-superlattice (SPS) buffer layer systems. The AlN/GaN SPS has been studied by x-ray diffraction where it appears as pseudoternary AlxGa1−xN alloy. Using elastic theory an effective Al content of 44% is calculated. This value is confirmed by the average Al content calculated from the AlN:GaN layer thickness ratio measured in cross-section transmission electron microscopy. The GaN waveguiding properties have been assessed using the prism coupling method. They sensibly improve with the total thickness of the underlying AlN/GaN superlattice as well as if an additional AlN/GaN SPS is grown atop the GaN waveguiding layer. © 2003 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
68.37.Lp Transmission electron microscopy (TEM)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Terahertz quantum-cascade laser operating up to 137 K

Benjamin S. Williams, Sushil Kumar, Hans Callebaut, Qing Hu, and John L. Reno

Appl. Phys. Lett. 83, 5142 (2003); http://dx.doi.org/10.1063/1.1635657 (3 pages) | Cited 53 times

Online Publication Date: 17 December 2003

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We report operation of a terahertz quantum-cascade laser at 3.8 THz (λ ≈ 79 μm) up to a heat-sink temperature of 137 K. A resonant phonon depopulation design was used with a low-loss metal–metal waveguide, which provided a confinement factor of nearly unity. A threshold current density of 625 A/cm2 was obtained in pulsed mode at 5 K. Devices fabricated using a conventional semi-insulating surface-plasmon waveguide lased up to 92 K with a threshold current density of 670 A/cm2 at 5 K. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Surface-relief diffraction gratings based on selective etching of periodically poled lithium niobate

J. Capmany, C. R. Fernández-Pousa, E. Diéguez, and V. Bermúdez

Appl. Phys. Lett. 83, 5145 (2003); http://dx.doi.org/10.1063/1.1636535 (3 pages) | Cited 5 times

Online Publication Date: 17 December 2003

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This work reports the use of selective etching in a periodically poled crystal of LiNbO3 (MgO):Yb3+ to engineer a surface-relief diffraction grating. A 35.1%–64.9% fill factor (domain duty cycle) grating with a 6.86 μm domain period is presented. The diffraction grating created provides a simple tool for accurate characterization of domain size and structure homogeneity. Following a similar process, arbitrary surface-relief two-level binary diffractive optical elements can be patterned in domain-engineered lithium niobate crystals. © 2003 American Institute of Physics.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.Dj Gratings
81.65.Cf Surface cleaning, etching, patterning
42.70.Mp Nonlinear optical crystals
68.35.B- Structure of clean surfaces (and surface reconstruction)
77.80.Dj Domain structure; hysteresis
42.86.+b Optical workshop techniques

Polarization switching in composite-resonator vertical-cavity lasers

D. M. Grasso and K. D. Choquette

Appl. Phys. Lett. 83, 5148 (2003); http://dx.doi.org/10.1063/1.1636266 (3 pages) | Cited 2 times

Online Publication Date: 17 December 2003

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We report polarization switching in a monolithic dual-resonator vertical-cavity laser. The light output from the top ion-implanted cavity under forward bias above threshold is partitioned into two orthogonal polarizations of the fundamental transverse mode. A reverse bias of sufficient magnitude applied to the bottom oxide-confined cavity causes the abrupt suppression of the dominant polarization and simultaneous emergence of the orthogonal polarization. We find that the electro-optic birefringence of the two polarizations increases with increasing reverse bias. We show that the mechanism of the polarization switch is consistent with wavelength-dependent loss from electroabsorption in the reverse-biased quantum wells of the oxide-confined cavity. © 2003 American Institute of Physics.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.25.Ja Polarization

Modulation of light by light in silicon-on-insulator waveguides

S. Stepanov and S. Ruschin

Appl. Phys. Lett. 83, 5151 (2003); http://dx.doi.org/10.1063/1.1636518 (3 pages) | Cited 9 times

Online Publication Date: 17 December 2003

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We report infrared light modulation based on direct free-carrier absorption induced by visible light irradiation in silicon-on-insulator waveguides. An amplitude modulation depth of 96% and 89% was measured for waveguide light carrier at a wavelength of 1.55 and 1.32 μm. The frequency dependence of the modulation effect was measured as well. © 2003 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays

Fast response wide viewing angle liquid crystal cell with double-side fringe-field switching

C. Y. Xiang, X. W. Sun, and X. J. Yin

Appl. Phys. Lett. 83, 5154 (2003); http://dx.doi.org/10.1063/1.1635982 (3 pages) | Cited 11 times

Online Publication Date: 17 December 2003

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A four-electrode liquid crystal cell, featuring a double-side fringe-field switching, has been designed with two-layer electrodes on both glass substrates. The two-layer electrode is the same as that used in fringe-field switching liquid crystal displays. Using a negative dielectric liquid crystal, a homogeneous cell has been fabricated with top and bottom stripe electrodes perpendicular to each other. The fringe fields near top and bottom surfaces drive the homogeneous liquid crystal layer to a twisted structure. The distributions of electric field and molecular director are obtained by theoretical analysis. The double-side fringe-field switching cell shows a much faster response and wider viewing cone compared to traditional fringe-field switching one. The improved electro-optical properties are due to the wider and more symmetric director distribution with respect to the midplane of the liquid crystal cell. © 2003 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices
85.60.Pg Display systems
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