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22 Dec 2003

Volume 83, Issue 25, pp. 5121-5321

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Appl. Phys. Lett. 83, 5310 (2003); http://dx.doi.org/10.1063/1.1635070 (3 pages)

Z. G. Chiragwandi, O. Nur, M. Willander, and N. Calander
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Electrical transport in boron nanowires

Dawei Wang, Jia G. Lu, Carolyn Jones Otten, and William E. Buhro

Appl. Phys. Lett. 83, 5280 (2003); http://dx.doi.org/10.1063/1.1630380 (3 pages) | Cited 36 times

Online Publication Date: 17 December 2003

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Electrical transport is studied in crystalline boron nanowires, using Ni and Ti as the contact electrodes, in which Ni forms ohmic contact and Ti forms Schottky-barrier junction. Three-terminal electrical measurements demonstrate p-type semiconductor behavior with estimated carrier mobility of 10−3 cm2/V s. The conductivities in annealed devices are on the order of 10−2 (Ω cm)−1. At 4.2 K, the I-V shows low conductance at low bias voltage, and increases exponentially beyond a threshold electric field close to 105 V/cm. We attribute this behavior to electric-field-induced impact ionization. © 2003 American Institute of Physics.
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73.63.Nm Quantum wires
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
61.46.-w Structure of nanoscale materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si

S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, C. W. Liu, T. Y. Chien, and C. T. Chia

Appl. Phys. Lett. 83, 5283 (2003); http://dx.doi.org/10.1063/1.1635073 (3 pages) | Cited 29 times

Online Publication Date: 17 December 2003

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Nanorings with an average height and diameter of 1.2 and 65 nm, respectively, were observed to form in Si-capped Ge quantum dots grown at 600 °C by ultrahigh-vacuum chemical vapor deposition. The nanorings were captured with the rapid cooling of the samples with appropriate amount of Si capping. Based on the results of transmission electron microscopy and Raman spectroscopy, the formation of nanorings is attributed to alloying and strain relief in the Si/Ge/(001)Si system. The self-assembly of nanorings provides a useful scheme to form ultrasmall ring-like structure and facilitates the characterization of the physical properties of unconventional quantum structures. © 2003 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
81.07.Ta Quantum dots
78.67.Hc Quantum dots
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.30.Am Elemental semiconductors and insulators
68.37.Lp Transmission electron microscopy (TEM)
61.46.-w Structure of nanoscale materials

Parallel writing by local oxidation nanolithography with submicrometer resolution

Massimiliano Cavallini, Paolo Mei, Fabio Biscarini, and Ricardo García

Appl. Phys. Lett. 83, 5286 (2003); http://dx.doi.org/10.1063/1.1633685 (3 pages) | Cited 32 times

Online Publication Date: 17 December 2003

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We demonstrate that the process of local oxidation of surfaces by atomic force microscopy (AFM) can be upscaled in a straightforward way by using a solid support with multiple protrusions as the cathode electrode. A metallized digital video disk DVD polymeric support has been used as a stamp to generate an array of features of variable length and 100 nm in width on a silicon surface covering a 5×6 mm2 region. The parallel patterning process involves the formation of as many liquid bridges as there are protrusions in the stamp. The growth rate of the parallel local oxides is slightly smaller than the one obtained by AFM experiments. Nonetheless, results from AFM local oxidation experiments can be readily extended to parallel oxidation which in turn opens the possibility of patterning centimeter-square regions with 10 nm motives. © 2003 American Institute of Physics.
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81.16.Nd Micro- and nanolithography
81.16.Pr Micro- and nano-oxidation
85.40.Hp Lithography, masks and pattern transfer
81.16.Ta Atom manipulation
81.65.Mq Oxidation

Structuring of self-assembled three-dimensional photonic crystals by direct electron-beam lithography

P. Ferrand, M. Egen, R. Zentel, J. Seekamp, S. G. Romanov, and C. M. Sotomayor Torres

Appl. Phys. Lett. 83, 5289 (2003); http://dx.doi.org/10.1063/1.1636271 (3 pages) | Cited 26 times

Online Publication Date: 17 December 2003

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An electron-beam lithography technique is described capable of structuring three-dimensional self-assembled photonic crystals. It is shown that the control of the writing depth can be achieved by varying the electron acceleration voltage. Microscopic structures with a depth from 0.4 up to 2 μm are fabricated with a typical lateral resolution of 0.4 μm. The relevance of this technique for the fabrication of deterministic defects sites in opal photonic crystals is discussed and its extension towards buried structures is suggested. © 2003 American Institute of Physics.
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81.16.Nd Micro- and nanolithography
81.16.Dn Self-assembly
85.40.Hp Lithography, masks and pattern transfer
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.86.+b Optical workshop techniques
61.72.-y Defects and impurities in crystals; microstructure
42.70.Qs Photonic bandgap materials

Dysprosium silicide nanowires on Si(110)

Zhian He, M. Stevens, David J. Smith, and P. A. Bennett

Appl. Phys. Lett. 83, 5292 (2003); http://dx.doi.org/10.1063/1.1636244 (3 pages) | Cited 34 times

Online Publication Date: 17 December 2003

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Dysprosium deposited on Si(110) at 720 °C is observed to form self-assembled silicide nanowire (NW) structures with a single orientation and average dimensions of 15 nm wide and microns long. The NW sides grow into the substrate along inclined Si{111} planes, forming a V-shaped cross section with an interface that is coherent on one side, described by DySi2(0001)//Si(11math) and DySi2[01math0]//Si[math10], and incoherent on the other. This type of growth represents a physical mechanism for self-assembled NW formation that does not require anisotropic lattice mismatch. © 2003 American Institute of Physics.
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81.16.Dn Self-assembly
61.46.-w Structure of nanoscale materials
68.65.La Quantum wires (patterned in quantum wells)
81.07.Vb Quantum wires

Efficient electron spin manipulation in a quantum well by an in-plane electric field

E. I. Rashba and Al. L. Efros

Appl. Phys. Lett. 83, 5295 (2003); http://dx.doi.org/10.1063/1.1635987 (3 pages) | Cited 36 times

Online Publication Date: 17 December 2003

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Electron spins in a semiconductor quantum well couple to an electric field via spin–orbit interaction. We show that the standard spin–orbit coupling mechanisms can provide extraordinarily efficient electron spin manipulation by an in-plane ac electric field. © 2003 American Institute of Physics.
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73.21.Fg Quantum wells
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Direct measurements of strain depth profiles in Ge/Si(001) nanostructures

D. W. Moon, H. I. Lee, B. Cho, Y. L. Foo, T. Spila, S. Hong, and J. E. Greene

Appl. Phys. Lett. 83, 5298 (2003); http://dx.doi.org/10.1063/1.1635074 (3 pages) | Cited 5 times

Online Publication Date: 17 December 2003

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Direct measurements of strain depth profiles in Ge layers consisting of either pyramidal or dome-shaped nanostructures grown on Si(001) by gas-source molecular-beam epitaxy were obtained using medium-energy ion scattering spectroscopy. Layers consisting solely of pyramidal Ge structures (corresponding to total Ge coverages θGe = 5.5 ML) exhibit a compressive strain of 2.1% which is uniform with depth. In contrast, Ge layers with a dome-shaped surface morphology (θGe = 8.9 ML) undergo significant relaxation giving rise to a strain gradient which varies from 0.6% at the surface to 2.1% at the Ge/Si(001) interface. © 2003 American Institute of Physics.
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62.25.-g Mechanical properties of nanoscale systems
68.60.Bs Mechanical and acoustical properties
68.47.Fg Semiconductor surfaces
68.35.Ct Interface structure and roughness
81.07.Bc Nanocrystalline materials
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Plasma coating of carbon nanofibers for enhanced dispersion and interfacial bonding in polymer composites

Donglu Shi, Jie Lian, Peng He, L. M. Wang, Feng Xiao, Ling Yang, Mark J. Schulz, and David B. Mast

Appl. Phys. Lett. 83, 5301 (2003); http://dx.doi.org/10.1063/1.1636521 (3 pages) | Cited 49 times

Online Publication Date: 17 December 2003

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Ultrathin films of polystyrene were deposited on the surfaces of carbon nanofibers using a plasma polymerization treatment. A small percent by weight of these surface-coated nanofibers were incorporated into polystyrene to form a polymer nanocomposite. The plasma coating greatly enhanced the dispersion of the nanofibers in the polymer matrix. High-resolution transmission-electron-microscopy (HRTEM) images revealed an extremely thin film of the polymer layer (∼3 nm) at the interface between the nanofiber and matrix. Tensile test results showed considerably increased strength in the coated nanofiber composite while an adverse effect was observed in the uncoated composites; the former exhibited shear yielding due to enhanced interfacial bonding while the latter fractured in a brittle fashion. © 2003 American Institute of Physics.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.07.De Nanotubes
52.77.Dq Plasma-based ion implantation and deposition

Hole trapping time measurement in low-temperature-grown gallium arsenide

R. Adomavičius, A. Krotkus, K. Bertulis, V. Sirutkaitis, R. Butkus, and A. Piskarskas

Appl. Phys. Lett. 83, 5304 (2003); http://dx.doi.org/10.1063/1.1632538 (3 pages) | Cited 9 times

Online Publication Date: 17 December 2003

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We study hole dynamics in GaAs layers grown by molecular-beam epitaxy at 270 °C by two-color pump-and-probe experiments employing femtosecond 800-nm-wavelength pulses for sample’s excitation and 9-μm-wavelength pulses for probing the induced intervalence band absorption. Hole trapping time in as-grown, undoped layer is equal to 2 ps; it increases after thermal annealing or Be doping, and decreases in Si-doped layer. The mechanism of the hole trapping is discussed; it is shown that experimental observations are consistent with the hole trapping at neutral arsenic antisites model. © 2003 American Institute of Physics.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors
71.20.Nr Semiconductor compounds

Self-aligned mechanical attachment of carbon nanotubes to silicon dioxide structures by selective silicon dioxide chemical-vapor deposition

Jed D. Whittaker, Markus Brink, Ghaleb A. Husseini, Matthew R. Linford, and Robert C. Davis

Appl. Phys. Lett. 83, 5307 (2003); http://dx.doi.org/10.1063/1.1636267 (3 pages) | Cited 6 times

Online Publication Date: 17 December 2003

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A self-aligned thin-film deposition technique was developed to mechanically attach carbon nanotubes to surfaces for the fabrication of structurally robust nanotube-based nanomechanical devices. Single-walled carbon nanotubes were grown by thermal chemical-vapor deposition (CVD) across 150-nm-wide SiO2 trenches. The nanotubes were mechanically attached to the trench tops by selective silicon tetraacetate-based SiO2 CVD. No film was deposited on the nanotubes where they were suspended across the trenches. © 2003 American Institute of Physics.
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81.07.De Nanotubes
85.35.Kt Nanotube devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.46.-w Structure of nanoscale materials
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