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29 Dec 2003

Volume 83, Issue 26, pp. 5347-5569

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Appl. Phys. Lett. 83, 5527 (2003); http://dx.doi.org/10.1063/1.1637143 (3 pages)

Chad R. Barry, Nyein Z. Lwin, Wei Zheng, and Heiko O. Jacobs
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Surface potential profiling and contact resistance measurements on operating pentacene thin-film transistors by Kelvin probe force microscopy

Kanan P. Puntambekar, Paul V. Pesavento, and C. Daniel Frisbie

Appl. Phys. Lett. 83, 5539 (2003); http://dx.doi.org/10.1063/1.1637443 (3 pages) | Cited 127 times

Online Publication Date: 22 December 2003

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Surface potentials of operating pentacene thin-film transistors (TFTs) with two different contact geometries (bottom or top) were mapped by Kelvin probe force microscopy (KFM). The surface potential distribution was used to isolate the potential drops at the source and drain contacts. These potential drops were converted to resistances by dividing by the appropriate drain current values. The bottom contact TFTs were contact limited at large gate voltages, while the top contact TFTs were not contact limited. In both geometries, the contact and the channel resistances decreased strongly with increasing (negative) gate bias but did not depend strongly on the drain bias. This study demonstrates the utility of KFM for visualizing charge transport bottlenecks in operating pentacene devices and for correlating electrical behavior with device structure by comparison of surface potential and topographic maps. © 2003 American Institute of Physics.
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85.65.+h Molecular electronic devices
85.30.Tv Field effect devices
73.40.Cg Contact resistance, contact potential
68.37.Ps Atomic force microscopy (AFM)
85.30.De Semiconductor-device characterization, design, and modeling
73.61.Ph Polymers; organic compounds

Soft breakdown of oxide–nitride–oxide stacked gate dielectrics used in metal–oxide–nitride–oxide–silicon-based flash memories

Kenji Okada

Appl. Phys. Lett. 83, 5542 (2003); http://dx.doi.org/10.1063/1.1637149 (3 pages)

Online Publication Date: 22 December 2003

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Degradation behavior of oxide–nitride–oxide (ONO) stacked gate dielectrics used in metal–oxide–nitride–oxide–silicon (MONOS)-based flash memories has been studied. Occurrence of the soft breakdown (SBD), which is well known in single-layer ultrathin silicon dioxides, has been revealed even in these thick and stacked dielectrics. The SBD of ONO dielectrics shows similar characteristics with that of silicon dioxides in locality, current/voltage fluctuation, and the dependencies of the ratio of SBD on the gate area and stress condition. These findings require the countermeasure for SBD even in MONOS-based flash memories and also give useful information on the reliability of high-k stacked gate dielectrics. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
84.30.Sk Pulse and digital circuits
77.22.Jp Dielectric breakdown and space-charge effects

Breakdown characteristics of InP/InGaAs composite-collector double heterojunction bipolar transistor

Y. S. Lin

Appl. Phys. Lett. 83, 5545 (2003); http://dx.doi.org/10.1063/1.1637147 (3 pages) | Cited 4 times

Online Publication Date: 22 December 2003

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This investigation proposes an InP/InGaAs composite-collector double heterojunction bipolar transistor (CC-DHBT) grown by metalorganic chemical vapor deposition. The improved structure exhibits the advantages of no knee-shaped characteristics, no switching effect, low output conductance, a high two-terminal base–collector breakdown voltage (BV) that exceeds 20 V, and high three-terminal breakdown voltages (BVCEO>15 V, BVCBO>20 V). The current gain is over unity at ultralow collector current density of 10−4 A/cm2. These characteristics are attributed to the optimized collector design. Furthermore, this study elucidates complex breakdown mechanisms in the CC-DHBTs. © 2003 American Institute of Physics.
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85.30.Pq Bipolar transistors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Characterization of InP electron-initiated impact ionization in low electric fields using abrupt junction NpN InP/GaAsSb/InP double heterojunction bipolar transistors

S. Lam, C. R. Bolognesi, and S. P. Watkins

Appl. Phys. Lett. 83, 5548 (2003); http://dx.doi.org/10.1063/1.1637446 (3 pages) | Cited 1 time

Online Publication Date: 22 December 2003

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The electron impact ionization coefficient αn(E) in InP is determined from electron multiplication measurements in NpN InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs). The staggered (“type-II”) band lineup between the p+ GaAs0.51Sb0.49 base and the InP collector layer allows the injection of a pure electron initiating current directly into the InP collector across an abrupt base/collector heterojunction, without the ambiguities associated with the compositional grading otherwise required to overcome the blocking band discontinuity between Ga0.47In0.53As and InP. InP/GaAsSb/InP DHBTs thus enable us to characterize αn(E) in InP in a low-field regime. Whereas the αn(E) values we extract at higher fields are in good agreement with previously reported photodiode based measurements, our data reveal a clear low-field “tail” for αn(E)<102 cm−1, indicating that InP has a soft impact ionization threshold similar to that observed for electrons in Ga0.47In0.53As. This finding can be understood in terms of the similarities between the conduction band structures of InP and Ga0.47In0.53As. © 2003 American Institute of Physics.
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85.30.Pq Bipolar transistors
73.50.Fq High-field and nonlinear effects
85.30.De Semiconductor-device characterization, design, and modeling

Ultrafast response ( ∼ 2.2 ps) of ion-irradiated InGaAs photoconductive switch at 1.55 μm

J. Mangeney, L. Joulaud, P. Crozat, J.-M. Lourtioz, and J. Decobert

Appl. Phys. Lett. 83, 5551 (2003); http://dx.doi.org/10.1063/1.1633030 (3 pages) | Cited 14 times

Online Publication Date: 22 December 2003

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A 2.2 ps full-width-at-half-maximum impulse response is measured for ion-irradiated InGaAs photoconductive switches triggered by ultrashort 1.55 μm laser pulses. Correspondingly, the −3 dB bandwidth is estimated to be ∼120 GHz. Measurements of the electrical signals delivered by photoconductive switches are performed using an electro-optic sampling technique. As is shown, the ion irradiation reduces the carrier lifetime to less than 1 ps. The sheet resistance is 0.6×105 Ω/square. The photoconductive switch responsivity is found to exhibit a nonlinear dependence with optical power. The results are qualitatively interpreted. © 2003 American Institute of Physics.
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85.60.-q Optoelectronic devices
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors
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