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29 Dec 2003

Volume 83, Issue 26, pp. 5347-5569

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Appl. Phys. Lett. 83, 5527 (2003); http://dx.doi.org/10.1063/1.1637143 (3 pages)

Chad R. Barry, Nyein Z. Lwin, Wei Zheng, and Heiko O. Jacobs
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Lateral epitaxial growth of (Ba,Sr)TiO3 thin films

Jang-Sik Lee, H. Wang, Sang Yeol Lee, S. R. Foltyn, and Q. X. Jia

Appl. Phys. Lett. 83, 5494 (2003); http://dx.doi.org/10.1063/1.1637445 (3 pages) | Cited 13 times

Online Publication Date: 22 December 2003

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We report a technique for epitaxial thin-film growth by combination of selective heteroepitaxial and lateral homoepitaxial growth. (Ba,Sr)TiO3 (BST) thin films were deposited on LaAlO3 having amorphous SiOx masking layers with stripe patterns at 450 °C by pulsed-laser deposition. Postannealing was carried out thereafter for lateral epitaxial growth. The difference in BST nucleation temperatures from the amorphous masking regions and lattice-matched single-crystalline substrates enables selective nucleation. Heteroepitaxial growth takes place in the regions of single-crystalline substrates, whereas lateral homoepitaxial growth evolves from the crystallized BST towards the SiOx masked region during postannealing process. © 2003 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition
68.55.A- Nucleation and growth
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.37.Lp Transmission electron microscopy (TEM)
61.72.Cc Kinetics of defect formation and annealing

Structure, bonding, and band offsets of (100)SrTiO3–silicon interfaces

P. W. Peacock and J. Robertson

Appl. Phys. Lett. 83, 5497 (2003); http://dx.doi.org/10.1063/1.1637715 (3 pages) | Cited 24 times

Online Publication Date: 22 December 2003

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We derive rules for bonding at interfaces between Si and ionic oxides so that they satisfy valence requirements and give a defect-free interface. These rules are used to analyze epitaxial interfaces of SrTiO3 on (100)Si. The band offsets are found from the local density of states and it is found possible to modulate the offset. Some proposed interface structures are found to give gap states. © 2003 American Institute of Physics.
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68.35.Ct Interface structure and roughness
73.20.At Surface states, band structure, electron density of states
61.50.Lt Crystal binding; cohesive energy
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Epitaxial growth and ferroelectric properties of SrBi2Nb2O9(115) thin films grown by pulsed-laser deposition on epitaxial Pt(111) electrode

J.-R. Duclère, M. Guilloux-Viry, V. Bouquet, A. Perrin, E. Cattan, C. Soyer, and D. Rèmiens

Appl. Phys. Lett. 83, 5500 (2003); http://dx.doi.org/10.1063/1.1634387 (3 pages) | Cited 6 times

Online Publication Date: 22 December 2003

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Epitaxial SrBi2Nb2O9 thin films have been grown by pulsed-laser deposition on Pt(111) bottom electrode epitaxially grown by dc sputtering on sapphire(0001). Four-circle x-ray diffraction reveals the epitaxial growth of the SrBi2Nb2O9(115)/Pt(111) bilayers. The influence of the Pt bottom electrode on the growth of SrBi2Nb2O9 films is discussed in terms of atomic matching at the SrBi2Nb2O9/Pt interface. The remanent polarization is close to 6 μC/cm2, with a coercive field of 140 kV/cm. The zero-field relative permittivity is about 132 and the dielectric loss less than to 2%. The decay in remanent polarization is only 16% after 2.109 switching cycles, confirming the fatigue resistance of the film. © 2003 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Fg Pulsed laser ablation deposition
77.80.-e Ferroelectricity and antiferroelectricity
81.15.Kk Vapor phase epitaxy; growth from vapor phase
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)

High-k properties of atomic-layer-deposited HfO2 films using a nitrogen-containing Hf[N(CH3)2]4 precursor and H2O oxidant

Moonju Cho, Hong Bae Park, Jaehoo Park, Suk Woo Lee, Cheol Seong Hwang, Gi Hoon Jang, and Jaehack Jeong

Appl. Phys. Lett. 83, 5503 (2003); http://dx.doi.org/10.1063/1.1637128 (3 pages) | Cited 34 times

Online Publication Date: 22 December 2003

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HfO2 thin films were deposited on HF-dipped Si wafers at 300 °C using an atomic-layer-deposition technique with N-containing Hf[N(CH3)2]4 and H2O as the precursor and oxidant, respectively. A thin interfacial SiNx layer was spontaneously formed at the HfO2/Si interface during film growth. This interfacial SiNx layer prevented substrate Si diffusion into the HfO2 film. Therefore, the reduction in the capacitance density as a result of post-annealing at 800 °C was minimized. The leakage current density was also reduced due to the more amorphous-like structure of the film. Furthermore, the interfacial trap density (Dit) of <5×1010 cm−2 eV−1 near the midgap energy states was obtained from an as-deposited film that has a capacitance equivalent thickness of 1.8 nm. This Dit value was comparable to that of the well-grown SiO2/Si interface. However, the Dit slightly increased after post-annealing as a result of the increased N concentration at the interface, but it was still <1×1011 cm−2 eV−1. © 2003 American Institute of Physics.
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77.55.-g Dielectric thin films
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors

Fatigue-free RuO2/Pb(Zr,Ti)O3/RuO2 capacitor prepared by metalorganic chemical vapor deposition at 395 °C

Gouji Asano, Hitoshi Morioka, Hiroshi Funakubo, Tetsuo Shibutami, and Noriaki Oshima

Appl. Phys. Lett. 83, 5506 (2003); http://dx.doi.org/10.1063/1.1635964 (3 pages) | Cited 30 times

Online Publication Date: 22 December 2003

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We deposited an RuO2/Pb(Zr0.40Ti0.60)O3/RuO2 capacitor by metalorganic chemical vapor deposition. RuO2 and Pb(Zr0.40Ti0.60)O3 films were prepared at 350, 395, and 445 °C from respective Ru(C7H11)(C7H9)–O2 and Pb(C11H19O2)2–Zr(O⋅t-C4H9)4–Ti(O⋅i-C3H7)4–O2 systems. Good ferroelectricity was observed for PZT films deposited at 445 °C but not at 395 °C. However, we obtained ferroelectricity with a remanent polarization above 30 μC/cm2 by inserting a 10-nm-thick sputtered-Pt layer between the PZT and RuO2 bottom electrodes, which improved the crystallinity of PZT films even those deposited at 395 °C. This capacitor had hardly any fatigue after 1×1010 switching cycles. This demonstrates the possibility of preparing fatigue-free capacitor all deposited below 400 °C for high-density ferroelectric random-access memory applications. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
84.32.Tt Capacitors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.80.Dj Domain structure; hysteresis
85.50.Gk Non-volatile ferroelectric memories
77.22.Ej Polarization and depolarization
77.55.-g Dielectric thin films

Magnetic properties of PbFe2/3W1/3O3-PbTiO3 solid solutions

Liliana Mitoseriu, Daniele Marré, Antonio Sergio Siri, and Paolo Nanni

Appl. Phys. Lett. 83, 5509 (2003); http://dx.doi.org/10.1063/1.1632033 (3 pages) | Cited 19 times

Online Publication Date: 22 December 2003

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The magnetic properties of the ferroic (1−x)PbFe2/3W1/3O3–xPbTiO3 system with various compositions in the range x ∊ (0,0.50) were investigated. A magnetodielectric coupling is proved by an anomaly of the magnetic hysteresis loop found in the Curie range of temperatures for the relaxor PbFe2/3W1/3O3 ceramic. Two types of superexchange magnetic interactions and a succession of magnetic transitions with Néel temperatures dependent on the composition were found in the system. The present results confirm the hypothesis of a relationship between the magnetic properties and the nanopolar ordering in the relaxor–ferroelectric system. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.30.Et Exchange and superexchange interactions
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
77.22.Gm Dielectric loss and relaxation
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