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29 Dec 2003

Volume 83, Issue 26, pp. 5347-5569

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Appl. Phys. Lett. 83, 5527 (2003); http://dx.doi.org/10.1063/1.1637143 (3 pages)

Chad R. Barry, Nyein Z. Lwin, Wei Zheng, and Heiko O. Jacobs
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Passivation of Si nanocrystals in SiO2: Atomic versus molecular hydrogen

A. R. Wilkinson and R. G. Elliman

Appl. Phys. Lett. 83, 5512 (2003); http://dx.doi.org/10.1063/1.1637130 (3 pages) | Cited 16 times

Online Publication Date: 22 December 2003

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Photoluminescence measurements were used to investigate the effect of atomic and molecular hydrogen on the passivation of Si nanocrystals in SiO2. Significant increases in the luminescence intensity and lifetime were found in samples coated with a thin Al layer prior to a standard anneal in molecular hydrogen. This is shown to be consistent with enhanced passivation of the nanocrystals by atomic hydrogen. © 2003 American Institute of Physics.
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81.65.Rv Passivation
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Ap Elemental semiconductors
61.72.Cc Kinetics of defect formation and annealing

Orbital motion of metallic carbon nanotubes in an axial magnetic field

Jie Jiang, Jinming Dong, and D. Y. Xing

Appl. Phys. Lett. 83, 5515 (2003); http://dx.doi.org/10.1063/1.1637144 (3 pages) | Cited 2 times

Online Publication Date: 22 December 2003

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It is found that the orbital effect of a single-wall carbon nanotube quantum dot with rather longer length in the axial magnetic field can become the same order as the Zeeman one or even exceed it for the states nearest to the Fermi level. We predict that the spin singlet–triplet transition can be driven almost entirely by the orbital effect in the nanotube quantum dot. Thus, a type of Kondo effect realized by coupling the singlet state to all triplet states may also be observed in the nanotubes. © 2003 American Institute of Physics.
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73.22.-f Electronic structure of nanoscale materials and related systems
73.21.La Quantum dots
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Negative differential resistance in a bilayer molecular junction

John D. Le, Yan He, Thomas R. Hoye, Curtis C. Mead, and Richard A. Kiehl

Appl. Phys. Lett. 83, 5518 (2003); http://dx.doi.org/10.1063/1.1636520 (3 pages) | Cited 20 times

Online Publication Date: 22 December 2003

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Negative differential resistance (NDR) is reported for a bilayer molecular junction. The system is comprised of a Hg–alkanethiol//arenethiol–Au bilayer molecular junction formed by bringing into contact a tetradecanethiol self-assembled monolayer (SAM)-coated drop of Hg with the surface of an oligo(phenylene-ethynylene) SAM on Au. Persistent, reproducible NDR is observed in the current–voltage characteristics with peak-to-valley ratios as high as 4.5 at room temperature. These results open a promising line of investigation of structure/function relationship and mechanisms in molecular NDR components. © 2003 American Institute of Physics.
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73.61.Ph Polymers; organic compounds
81.16.Dn Self-assembly
81.07.Nb Molecular nanostructures
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
73.40.-c Electronic transport in interface structures
85.65.+h Molecular electronic devices
85.35.-p Nanoelectronic devices

Transient-signal-based sample-detection in atomic force microscopy

Deepak R. Sahoo, Abu Sebastian, and Murti V. Salapaka

Appl. Phys. Lett. 83, 5521 (2003); http://dx.doi.org/10.1063/1.1633963 (3 pages) | Cited 14 times

Online Publication Date: 22 December 2003

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In typical dynamic mode operation of atomic force microscopes, steady state signals like amplitude and phase are used for detection and imaging of material. In these methods, the resolution and bandwidth are dictated by the quality factor (Q) of the cantilever. In this letter, we present a methodology that exploits the deflection signal during the transient of the cantilever motion. The principle overcomes the fundamental limitations on the trade off between resolution and bandwidth present in existing methods and makes it independent of the quality factor. Experimental results provided corroborate the theoretical development. © 2003 American Institute of Physics.
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07.79.Lh Atomic force microscopes

Exciton spin relaxation time in quantum dots measured by continuous-wave photoluminescence spectroscopy

S. Mackowski, T. A. Nguyen, H. E. Jackson, L. M. Smith, J. Kossut, and G. Karczewski

Appl. Phys. Lett. 83, 5524 (2003); http://dx.doi.org/10.1063/1.1636516 (3 pages) | Cited 27 times

Online Publication Date: 22 December 2003

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We demonstrate a method of measuring the exciton spin relaxation time in semiconductor nanostructures by continuous-wave photoluminescence. We find that for self-assembled CdTe quantum dots (QDs) the degree of circular polarization of emission is larger when exciting polarized excitons into the lower energy spin state (σ−-polarized) than in the case when the excitons are excited into the higher energy spin state (σ+-polarized). A simple rate equation model gives the exciton spin relaxation time in CdTe QDs equal to τS = 4.8±0.3 ns, significantly longer than the QD exciton recombination time τR = 300 ps. © 2003 American Institute of Physics.
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78.67.Hc Quantum dots
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
78.55.Et II-VI semiconductors

Printing nanoparticle building blocks from the gas phase using nanoxerography

Chad R. Barry, Nyein Z. Lwin, Wei Zheng, and Heiko O. Jacobs

Appl. Phys. Lett. 83, 5527 (2003); http://dx.doi.org/10.1063/1.1637143 (3 pages) | Cited 28 times

Online Publication Date: 22 December 2003

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This letter reports on the electrostatic driven self-assembly of nanoparticles onto charged surface areas (receptors) from the gas phase for nanoparticle based device fabrication. The charged areas were generated by a parallel technique that uses a flexible, conductive electrode to pattern electrons and holes in a thin film electret. Samples, 1 cm2 in size, were patterned with charge in 10 s with 100 nm scale resolution. Charge based receptors, 100 nm×100 nm in size, contained ∼ 100 elementary charges. A transparent particle assembly module was designed to direct and monitor the assembly of metallic nanoparticles at a resolution of 100 nm, which is ∼ 3 orders of magnitude greater than the resolution of existing xerographic printers. © 2003 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
81.16.Nd Micro- and nanolithography
81.16.Dn Self-assembly
61.46.-w Structure of nanoscale materials
07.68.+m Photography, photographic instruments; xerography

Coulomb blockade of electron transport in a ZnO quantum-dot solid

Aarnoud L. Roest, John J. Kelly, and Daniël Vanmaekelbergh

Appl. Phys. Lett. 83, 5530 (2003); http://dx.doi.org/10.1063/1.1637444 (3 pages) | Cited 18 times

Online Publication Date: 22 December 2003

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The temperature dependence of electron transport was studied in an assembly of ZnO quantum dots. The number of electrons per quantum dot was controlled by the electrochemical potential. For assemblies permeated with organic electrolyte solutions, the electron conductance measured in the linear response regime shows an activation energy of 80–120 meV. Our analysis indicates that this is due to Coulomb blockade of electron transport. © 2003 American Institute of Physics.
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73.63.Kv Quantum dots
73.23.Hk Coulomb blockade; single-electron tunneling
73.21.La Quantum dots
73.40.Mr Semiconductor-electrolyte contacts
82.45.Vp Semiconductor materials in electrochemistry
73.63.Bd Nanocrystalline materials
82.45.Yz Nanostructured materials in electrochemistry

Growth and luminescence of zinc-blende-structured ZnSe nanowires by metal-organic chemical vapor deposition

X. T. Zhang, Z. Liu, Y. P. Leung, Quan Li, and S. K. Hark

Appl. Phys. Lett. 83, 5533 (2003); http://dx.doi.org/10.1063/1.1638633 (3 pages) | Cited 52 times

Online Publication Date: 22 December 2003

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Zinc-blende-structured single-crystalline ZnSe nanowires and nanoribbons were grown on (001) silicon substrates by metal-organic chemical vapor deposition. The as-synthesized nanowires were characterized by x-ray powder diffraction and scanning electron microscopy. The diameters of the nanowires range from a few tens to 100 nm and the typical length is in the tens of micrometers. Individual strands of the nanowires were examined by transmission electron microscopy and cathodoluminescence spectroscopy. They were found to be single crystals elongated along the 〈11math〉 crystallographic direction. Strong and narrow room-temperature band-gap light emissions indicate that their optical and electronic properties rival those of the epitaxial layers employed in diode lasers. A possible growth mechanism of the ZnSe nanowires is also discussed. © 2003 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.Hf II-VI semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence

Formation and optical properties of CdTe self-assembled pyramids with quantum states grown on ZnTe buffer layers

E. H. Lee, K. H. Lee, J. S. Kim, H. L. Park, and T. W. Kim

Appl. Phys. Lett. 83, 5536 (2003); http://dx.doi.org/10.1063/1.1637964 (3 pages) | Cited 1 time

Online Publication Date: 22 December 2003

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Atomic force microscopy (AFM) and photoluminescence (PL) measurements were carried out to investigate the structure and to determine the electron activation energy in CdTe/ZnTe pyramids grown by using molecular beam epitaxy and atomic layer epitaxy methods. The AFM images showed that self-assembled CdTe pyramids were formed on ZnTe buffer layers. The PL spectra showed that the formed CdTe pyramids had quantum states and that the excitonic peak corresponding to the transition from the ground electronic subband to the ground heavy-hole band (E1–HH1) in the CdTe/ZnTe pyramids was shifted to higher energy in comparison with that in CdTe/ZnTe quantum dots (QDs). The activation energy of the electrons confined in the CdTe pyramids, as obtained from the temperature-dependent PL spectra, was higher than that in CdTe QDs. These results can help improve an understanding of the formation and optical properties in self-assembled CdTe pyramids with quantum states. © 2003 American Institute of Physics.
Show PACS
78.66.Hf II-VI semiconductors
78.67.Hc Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
73.21.La Quantum dots
78.55.Et II-VI semiconductors
81.05.Dz II-VI semiconductors
81.07.Ta Quantum dots
68.37.Ps Atomic force microscopy (AFM)
68.55.A- Nucleation and growth
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
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