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29 Dec 2003

Volume 83, Issue 26, pp. 5347-5569

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Appl. Phys. Lett. 83, 5527 (2003); http://dx.doi.org/10.1063/1.1637143 (3 pages)

Chad R. Barry, Nyein Z. Lwin, Wei Zheng, and Heiko O. Jacobs
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Thermal diffusivity and thermoelectric figure of merit of Al1−xInxN prepared by reactive radio-frequency sputtering

Shigeo Yamaguchi, Ryohei Izaki, Ken-ichi Yamagiwa, Kyoichiro Taki, Yasuo Iwamura, and Atsushi Yamamoto

Appl. Phys. Lett. 83, 5398 (2003); http://dx.doi.org/10.1063/1.1637156 (3 pages) | Cited 18 times

Online Publication Date: 22 December 2003

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We studied the thermal properties of AlN, InN, and Al1−xInxN films, prepared by reactive sputtering, as a function of the temperature. The results indicated minimum thermal diffusivities of 3.14×10−6 m2/s for AlN, 7.65×10−7 m2/s for InN, 7.53×10−7 m2/s for Al0.57In0.43N, and 7.03×10−7 m2/s for Al0.28In0.72N. We estimated the dimensionless thermoelectric figure of merit to be 0.1 for Al0.28In0.72N at 873 K. © 2003 American Institute of Physics.
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73.50.Lw Thermoelectric effects
66.30.Xj Thermal diffusivity
72.20.Pa Thermoelectric and thermomagnetic effects
73.61.Ey III-V semiconductors
72.80.Ey III-V and II-VI semiconductors

Heating and structural disordering effects of the nonlinear viscous flow in a Zr55Al10Ni5Cu30 bulk metallic glass

Hidemi Kato, Akihisa Inoue, and H. S. Chen

Appl. Phys. Lett. 83, 5401 (2003); http://dx.doi.org/10.1063/1.1637441 (3 pages) | Cited 12 times

Online Publication Date: 22 December 2003

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The heat evolution of stress-induced structural disorder, ΔHs(ε), of a Zr55Al10Ni5Cu30 bulk metallic glass (BMG) during compressive constant ram-velocity deformation at the glass transition region (Tg = 680 K) was deduced from in situ measurements of temperature change of the deforming sample. At the transition from the linear to nonlinear viscoelasticity, the behavior of viscosity change with strain, η(ε), is qualitatively consistent with the enthalpy evolution of the structural disordering, ΔHs(ε), but not with the temperature change, ΔT(ε). It is concluded that the initial softening deformation is due to the stress-induced structural disordering. The change in the nonlinearity, −log math  ≡ −log η /ηN, is found to be proportional to the ΔHs and the slope of ΔHs(−log math) can be estimated to 400 J/mol, where ηN is the Newtonian viscosity. On the other hand, the temperature raise, ΔT(ε), is pronouncedly delayed as compared with the η (ε) and ΔHs(ε) at the transition, but is determined by a product of stress and plastic strain-rate, σ⋅mathp, and is nearly proportional to it at the steady state. The slope of ΔT(σ⋅mathp) can be estimated to 5.2×10−2 K mol/W. © 2003 American Institute of Physics.
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61.43.Fs Glasses
83.60.Df Nonlinear viscoelasticity
81.40.Lm Deformation, plasticity, and creep
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
66.20.-d Viscosity of liquids; diffusive momentum transport
81.05.Kf Glasses (including metallic glasses)
83.60.Fg Shear rate dependent viscosity
62.20.F- Deformation and plasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations

Roughening kinetics of thin films in the presence of both stress and Ehrlich–Schwobel barrier

Z.-J. Liu and Y. G. Shen

Appl. Phys. Lett. 83, 5404 (2003); http://dx.doi.org/10.1063/1.1637448 (3 pages) | Cited 5 times

Online Publication Date: 22 December 2003

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The growth of thin films under the interplay of shot noise, Ehrlich–Schwobel barrier (ESB), stress, and surface diffusion has been studied within a linear continuum model. It is shown that the roughening kinetics of such a system is sensitive to the growth temperature. At low temperatures, the surface growth is dominated by the ESB, while the stress controls the morphology instability at high temperatures. In the intermediate temperature regime, both the ESB effect and the stress instability become weak, thus the surface roughening is primarily driven by noise. An analysis of the film growth in this relatively stable regime reveals that at the early stages of growth the surface roughness shows an exponential dependence on the growth time, with a time-dependent growth exponent β being larger than the value of 0.25 generated by the competition between pure noise and surface diffusion. At the late stages of growth, however, the scaling law is broken and the growth becomes unstable due to the enhanced stress and ESB effects induced by growth time. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.35.Fx Diffusion; interface formation
81.15.Aa Theory and models of film growth
68.60.Bs Mechanical and acoustical properties
68.35.Gy Mechanical properties; surface strains

Clusters formation in ultralow-energy high-dose boron-implanted silicon

F. Cristiano, X. Hebras, N. Cherkashin, A. Claverie, W. Lerch, and S. Paul

Appl. Phys. Lett. 83, 5407 (2003); http://dx.doi.org/10.1063/1.1637440 (3 pages) | Cited 27 times

Online Publication Date: 22 December 2003

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The formation and evolution of small cluster defects in 500 eV, 1×1015 cm−2 boron-implanted silicon is investigated. These clusters are identified by high-resolution transmission electron microscopy (TEM) as small dislocation loops lying on {100} planes with an interstitial character. Weak-beam dark-field TEM analysis shows that, during annealing at 650 °C, they evolve following an Ostwald ripening mechanism. Spike anneals at high temperatures make them dissolve but an immobile boron peak is still detected in the secondary ion mass spectroscopy profiles. Upon oxidation, the average size of the clusters increases, while boron electrical deactivation occurs. These results strongly indicate that the observed clusters contain both boron interstitials and silicon self-interstitials atoms. © 2003 American Institute of Physics.
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61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Cc Kinetics of defect formation and annealing
61.72.J- Point defects and defect clusters

Solid-like dynamics in ultrathin films of polymeric liquids

Gaurav Singh, Ravi F. Saraf, and Yves Martin

Appl. Phys. Lett. 83, 5410 (2003); http://dx.doi.org/10.1063/1.1637145 (3 pages) | Cited 1 time

Online Publication Date: 22 December 2003

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In this letter, we demonstrate that, at mesoscales, nonferroelectric liquid films of poly(dimethyl siloxane) exhibit significant electrostriction not present in the corresponding bulk state. Remarkably, the observed electrostrictive effect has a response time <20 μs in contrast to >5 ms recorded in conventional bulk (ferroelectric) polymers. The emergence of this fast electrostrictive strain in thin films is explained in terms of the amalgamation of two contrasting dynamic features—the influence of a highly mobile, viscous layer (at the air/film interface) on the less-mobile, but fast responding, solid-like layer at the film/substrate interface. The effect is observed for thickness below 200 nm. © 2003 American Institute of Physics.
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77.65.Bn Piezoelectric and electrostrictive constants
68.15.+e Liquid thin films
77.84.Nh Liquids, emulsions, and suspensions; liquid crystals
77.55.-g Dielectric thin films

InGaAs/InP double heterostructures on InP/Si templates fabricated by wafer bonding and hydrogen-induced exfoliation

A. Fontcuberta i Morral, J. M. Zahler, Harry A. Atwater, S. P. Ahrenkiel, and M. W. Wanlass

Appl. Phys. Lett. 83, 5413 (2003); http://dx.doi.org/10.1063/1.1637429 (3 pages) | Cited 26 times

Online Publication Date: 22 December 2003

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Hydrogen-induced exfoliation combined with wafer bonding has been used to transfer ∼ 600-nm-thick films of (100) InP to Si substrates. Cross-section transmission electron microscopy (TEM) shows a transferred crystalline InP layer with no observable defects in the region near the bonded interface and an intimately bonded interface. InP and Si are covalently bonded as inferred by the fact that InP/Si pairs survived both TEM preparation and thermal cycles up to 620 °C necessary for metalorganic chemical vapor deposition growth. The InP transferred layers were used as epitaxial templates for the growth of InP/In0.53Ga0.47As/InP double heterostructures. Photoluminescence measurements of the In0.53Ga0.47As layer show that it is optically active and under tensile strain, due to differences in the thermal expansion between InP and Si. These are promising results in terms of a future integration of Si electronics with optical devices based on InP-lattice-matched materials. © 2003 American Institute of Physics.
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68.35.Ct Interface structure and roughness
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.47.Fg Semiconductor surfaces
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
68.37.Lp Transmission electron microscopy (TEM)
68.55.A- Nucleation and growth

Enhanced thermoelectric properties of NaxCoO2 whisker crystals

G. Peleckis, T. Motohashi, M. Karppinen, and H. Yamauchi

Appl. Phys. Lett. 83, 5416 (2003); http://dx.doi.org/10.1063/1.1634371 (3 pages) | Cited 11 times

Online Publication Date: 22 December 2003

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Single-crystalline whiskers of thermoelectric cobalt oxide, NaxCoO2, have been grown by an unconventional method from potassium-containing compositions, and their transport properties, and chemical compositions were determined. The growth mechanism was analyzed and interpreted by means of thermogravimetric analysis. At 300 K, electrical resistivity ρ, and thermoelectric power S of the whisker are 102 μΩ cm and 83 μV/K, respectively. The power-factor, S2/ρ, thus is enhanced up to ∼ 68 μW/K2 cm. © 2003 American Institute of Physics.
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72.20.Pa Thermoelectric and thermomagnetic effects
68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves

Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope

T. M. Smeeton, M. J. Kappers, J. S. Barnard, M. E. Vickers, and C. J. Humphreys

Appl. Phys. Lett. 83, 5419 (2003); http://dx.doi.org/10.1063/1.1636534 (3 pages) | Cited 90 times

Online Publication Date: 22 December 2003

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InGaN quantum wells have been found to be extremely sensitive to exposure to the electron beam in the transmission electron microscope (TEM). High-resolution TEM images acquired immediately after first irradiating a region of quantum well indicates no gross fluctuations of indium content in the InGaN alloy. During only a brief period of irradiation, inhomogeneous strain is introduced in the material due to electron beam damage. This strain is very similar to that expected from genuine nanometer-scale indium composition fluctuations which suggests there is the possibility of falsely detecting indium-rich “clusters” in a homogeneous quantum well. © 2003 American Institute of Physics.
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68.65.Fg Quantum wells
81.07.St Quantum wells
68.37.Lp Transmission electron microscopy (TEM)
61.46.-w Structure of nanoscale materials
81.05.Ea III-V semiconductors
61.80.Fe Electron and positron radiation effects
61.66.Bi Elemental solids
61.66.Dk Alloys

Optical excitation of Er ions with 1.5 μm luminescence via the luminescent state in Si nanocrystallites embedded in SiO2 matrices

Tetsuya Makimura, Keiichi Kondo, Hiroshi Uematsu, Changqing Li, and Kouichi Murakami

Appl. Phys. Lett. 83, 5422 (2003); http://dx.doi.org/10.1063/1.1636247 (3 pages) | Cited 7 times

Online Publication Date: 22 December 2003

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Optical excitation bands have been investigated for Er-doped SiO2 films, including Si nanocrystallites as sensitizers. The Er-doped films with photoluminescence at 1.5 μm were fabricated using a laser ablation technique. It is found that the major continuous portion of the excitation bands for Er ions completely coincides with that of Si nanocrystallites at room temperature. Thus, it has been demonstrated that the second indirect absorption band of Si nanocrystallites can be used for efficient excitation of Er ions. The photoluminescence spectroscopy revealed that Er ions are possibly excited from the ground state 4I15/2 to the first excited state 4I13/2 by the energy transfer from the singlet excitons in Si nanocrystallites. © 2003 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
71.55.Ht Other nonmetals
71.35.-y Excitons and related phenomena
73.22.Lp Collective excitations
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters

Magnetoluminescence properties of GaAsSbN/GaAs quantum well structures

R. T. Senger, K. K. Bajaj, E. D. Jones, N. A. Modine, K. E. Waldrip, F. Jalali, J. F. Klem, G. M. Peake, X. Wei, and S. W. Tozer

Appl. Phys. Lett. 83, 5425 (2003); http://dx.doi.org/10.1063/1.1637439 (3 pages) | Cited 11 times

Online Publication Date: 22 December 2003

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We report a measurement of the variation of the diamagnetic shift of a heavy-hole exciton in a single coherently strained GaAs0.685Sb0.3N0.015/GaAs quantum well as a function of magnetic field up to 32 T at 1.3 K using photoluminescence spectroscopy. The excitons are known to be localized in this alloy system. This localization is simulated by assuming that the hole is completely immobilized, i.e., its mass is infinite. Using this model we have calculated the variation of the diamagnetic shift with magnetic field in this quantum well structure following a variational approach. We find that the observed variation of the diamagnetic shift with magnetic field agrees quite well with that calculated when the mass of the conduction electron in the well is assumed to be 0.09 m0, about 50% larger than in GaAs0.7Sb0.3, an increase similar to that found in GaAsN for the same nitrogen composition. © 2003 American Institute of Physics.
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78.67.De Quantum wells
73.21.Fg Quantum wells
71.35.Ji Excitons in magnetic fields; magnetoexcitons
78.55.Cr III-V semiconductors
78.20.Ls Magneto-optical effects
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

S–d exchange interaction in GaN:Mn studied by electron paramagnetic resonance

Agnieszka Wolos, Maria Palczewska, Zbyslaw Wilamowski, Maria Kaminska, Andrzej Twardowski, Michal Bockowski, Izabella Grzegory, and Sylwester Porowski

Appl. Phys. Lett. 83, 5428 (2003); http://dx.doi.org/10.1063/1.1637451 (3 pages) | Cited 5 times

Online Publication Date: 22 December 2003

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We present the electron paramagnetic resonance investigations of GaN:Mn bulk crystals. The performed measurements revealed the Korringa scattering as the dominant spin relaxation mechanism in the investigated highly n-type GaN:Mn samples. The temperature dependence of the spin relaxation time determines the effective s–d exchange constant for such crystals {N0α} = 14 meV. Weak exchange interaction between Mn2+ and GaN band electrons excludes carrier mediation as an origin of high-temperature ferromagnetism in n-type GaMnN. © 2003 American Institute of Physics.
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75.30.Et Exchange and superexchange interactions
76.30.Fc Iron group (3d) ions and impurities (Ti-Cu)
75.50.Pp Magnetic semiconductors
71.55.Eq III-V semiconductors
71.20.Nr Semiconductor compounds
75.50.Dd Nonmetallic ferromagnetic materials

Increased photo- and electroluminescence by zone annealing of spin-coated and vacuum-sublimed amorphous films producing crystalline thin films

Chong-Yang Liu and Allen J. Bard

Appl. Phys. Lett. 83, 5431 (2003); http://dx.doi.org/10.1063/1.1636823 (3 pages) | Cited 5 times

Online Publication Date: 22 December 2003

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Spin-coated and vacuum sublimed amorphous thin films ( ∼ 100 nm thick) were converted into single crystalline films with a simple moving-zone-annealing technique, in which a heated metal wire generated a narrow annealed zone in the film as it is moved across the sample. This annealing resulted in both the photoluminescence and electroluminescence to increase dramatically (by 3–4 times), for example with Ru(bpy)3(ClO4)2 and aluminum 8-hydroxyquinoline, (Alq3), as light emitting devices. This technique is of interest in improving the behavior of highly luminescent thin film optoelectronic devices. © 2003 American Institute of Physics.
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78.66.Qn Polymers; organic compounds
78.55.Kz Solid organic materials
81.40.Tv Optical and dielectric properties related to treatment conditions
42.79.Wc Optical coatings
81.40.Gh Other heat and thermomechanical treatments
81.15.Np Solid phase epitaxy; growth from solid phases
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.A- Nucleation and growth

Influence of alloy composition and interlayer thickness on twist and tilt mosaic in AlxGa1−xN/AlN/GaN heterostructures

T. A. Lafford, P. J. Parbrook, and B. K. Tanner 

Appl. Phys. Lett. 83, 5434 (2003); http://dx.doi.org/10.1063/1.1637717 (3 pages) | Cited 10 times

Online Publication Date: 22 December 2003

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High-resolution x-ray diffraction, in surface symmetric, skew symmetric, and grazing incidence in-plane diffraction geometries, has been used to investigate the effect of an AlN interlayer between micron thick GaN and AlxGa1−xN layers grown by metalorganic vapor phase epitaxy on basal plane sapphire. No change is found in the tilt mosaic (threading screw dislocation density) with thickness or Al fraction x of the upper layer. A linear increase in the twist mosaic (threading edge dislocation density) was observed as a function of interlayer thickness and x. For all samples the twist mosaic of the AlGaN was significantly greater, by at least a factor of two, than that of the GaN layer. With increasing interlayer thickness the in-plane lattice parameter of the AlGaN decreased. The results are explained in terms of extra threading edge dislocations resulting from relaxation at the GaN/AlN interface. © 2003 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Mm Grain and twin boundaries
81.15.Kk Vapor phase epitaxy; growth from vapor phase
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Influence of nanocrystal growth kinetics on interface roughness in nickel–aluminum multilayers

D. Aurongzeb, M. Holtz, M. Daugherty, J. M. Berg, A. Chandolu, J. Yun, and H. Temkin

Appl. Phys. Lett. 83, 5437 (2003); http://dx.doi.org/10.1063/1.1637155 (3 pages) | Cited 5 times

Online Publication Date: 22 December 2003

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We study the layer morphology of Ni/Al multilayer structures, with 50 nm period, as deposited and following 10 min anneals up through the melting temperature of Al. X-ray reflectivity measurement of the as-deposited film shows interference fringes, characteristic of a well-defined multilayer stack, with ∼1 nm interface roughness. Over a narrow anneal range of 360–500 °C these fringes diminish in amplitude and disappear, indicating elevated interface roughening. However, fringes are observed for anneal temperatures both below and above this range, indicating the presence of well-defined layers with smooth interfaces. A model, in which nanocrystal domains of intermetallic nickel aluminides form at the interfaces, is developed to quantify the annealing induced interface roughness. This model agrees well with the experimental results. © 2003 American Institute of Physics.
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68.65.Ac Multilayers
68.35.Ct Interface structure and roughness
61.46.-w Structure of nanoscale materials
81.05.Bx Metals, semimetals, and alloys
61.05.cm X-ray reflectometry (surfaces, interfaces, films)
61.72.Cc Kinetics of defect formation and annealing

Photoluminescence, depth profile, and lattice instability of hexagonal InN films

O. K. Semchinova, J. Aderhold, J. Graul, A. Filimonov, and H. Neff

Appl. Phys. Lett. 83, 5440 (2003); http://dx.doi.org/10.1063/1.1634691 (3 pages) | Cited 10 times

Online Publication Date: 22 December 2003

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High quality InN films have been grown on (0001) sapphire substrates by metalorganic molecular beam epitaxy, characterized for crystal structure, chemical composition, and optical properties. Depth profiling indicated a high, increasing oxygen concentration profile towards the volume of the film. Photoluminescence revealed two different, coexisting features: a low energy transition around 0.8 eV, and a high energy feature, peaking near 2 eV. The former band originates from the direct transition in the near surface range. The latter, low intensity band results from the bulk region. Oxynitride formation has been accounted for a spatially varying optical band gap EG, determined to 0.61 eV for pure, defect free material. X-ray diffraction analysis supports defect mediated lattice instability, as proposed recently by a molecular dynamic lattice theory. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.66.Fn Inorganic compounds
71.20.Nr Semiconductor compounds

Epitaxial silicon and germanium on buried insulator heterostructures and devices

N. A. Bojarczuk, M. Copel, S. Guha, V. Narayanan, E. J. Preisler, F. M. Ross, and H. Shang

Appl. Phys. Lett. 83, 5443 (2003); http://dx.doi.org/10.1063/1.1637716 (3 pages) | Cited 42 times

Online Publication Date: 22 December 2003

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Future microelectronics will be based upon silicon or germanium-on-insulator technologies and will require an ultrathin (<10 nm), flat silicon or germanium device layer to reside upon an insulating oxide grown on a silicon wafer. The most convenient means of accomplishing this is by epitaxially growing the entire structure on a silicon substrate. This requires a high quality crystalline oxide and the ability to epitaxially grow two dimensional, single crystal films of silicon or germanium on top of this oxide. We describe a method based upon molecular beam epitaxy and solid-phase epitaxy to make such structures and demonstrate working field-effect transistors on germanium-on-insulator layers. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.Np Solid phase epitaxy; growth from solid phases
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
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