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14 Jul 2003

Volume 83, Issue 2, pp. 207-403

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Appl. Phys. Lett. 83, 225 (2003); http://dx.doi.org/10.1063/1.1591241 (3 pages)

A. Borowiec, D. M. Bruce, Daniel T. Cassidy, and H. K. Haugen
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AlGaAs superlattice microcoolers

Jizhi Zhang, Neal G. Anderson, and Kei May Lau

Appl. Phys. Lett. 83, 374 (2003); http://dx.doi.org/10.1063/1.1591242 (3 pages) | Cited 8 times

Online Publication Date: 8 July 2003

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AlGaAs-based superlattice microcoolers are demonstrated. Maximum cooling temperatures of 0.8 °C and 2 °C were obtained at 25 °C and 100 °C, respectively, from 60 μm×60 μm devices with 100 period Al0.10Ga0.90As/Al0.20Ga0.80As n-type superlattice thermal barriers. These devices may be useful for in situ cooling of GaAs-based microelectronic and optoelectronic devices. © 2003 American Institute of Physics.
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85.80.Fi Thermoelectric devices
07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment
07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
68.65.Cd Superlattices

Fabrication of 1.4-kV mesa-type p+–n diodes with avalanche breakdown and without forward degradation on high-quality 6H-SiC substrate

Yasunori Tanaka, Shin-ichi Nishizawa, Kenji Fukuda, Kazuo Arai, Toshiyuki Ohno, Naoki Oyanagi, Takaya Suzuki, and Tsutomu Yatsuo

Appl. Phys. Lett. 83, 377 (2003); http://dx.doi.org/10.1063/1.1591062 (3 pages)

Online Publication Date: 8 July 2003

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Using our own substrate growth and epitaxial growth techniques, we fabricated a 1.4-kV mesa-type 6H-SiC p+–n diode with an ideal avalanche breakdown and without forward degradation. The 6H-SiC substrates were grown on Lely crystals with no micropipes and only minimal defects. A p+–n junction was fabricated by chemical vapor deposition with p+/n− epitaxial films. We obtained 1.4-kV breakdown voltage, consistent with the ideal breakdown voltage calculated from the thickness and doping concentration of the drift layer. The application of 200-A/cm2 current stress in the forward direction produced no degradation, which is often observed with p–n diodes on normal substrates. © 2003 American Institute of Physics.
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85.30.Kk Junction diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Three-dimensional photonic-crystal emitter for thermal photovoltaic power generation

S. Y. Lin, J. Moreno, and J. G. Fleming

Appl. Phys. Lett. 83, 380 (2003); http://dx.doi.org/10.1063/1.1592614 (3 pages) | Cited 132 times

Online Publication Date: 8 July 2003

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A three-dimensional tungsten photonic crystal is experimentally realized with a complete photonic band gap at wavelengths λ⩾3 μm. At an effective temperature of 〈T〉 ∼ 1535 K, the photonic crystal exhibits a sharp emission at λ∼1.5 μm and is promising for thermal photovoltaic (TPV) power generation. Based on the spectral radiance, a proper length scaling and a planar TPV model calculation, an optical-to-electric conversion efficiency of ∼34% and electrical power of ∼14 W/cm2 is theoretically possible. © 2003 American Institute of Physics.
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84.60.Jt Photoelectric conversion
42.70.Qs Photonic bandgap materials

Self-assembled subnanolayers as interfacial adhesion enhancers and diffusion barriers for integrated circuits

G. Ramanath, G. Cui, P. G. Ganesan, X. Guo, A. V. Ellis, M. Stukowski, K. Vijayamohanan, P. Doppelt, and M. Lane

Appl. Phys. Lett. 83, 383 (2003); http://dx.doi.org/10.1063/1.1591232 (3 pages) | Cited 40 times

Online Publication Date: 8 July 2003

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Preserving the structural and functional integrity of interfaces and inhibiting deleterious chemical interactions are critical for realizing devices with sub-50 nm thin films and nanoscale units. Here, we demonstrate that ∼ 0.7-nm-thick self-assembled monolayers (SAMs) comprising mercapto-propyl-tri-methoxy-silane (MPTMS) molecules enhance adhesion and inhibit Cu diffusion at Cu/SiO2 structures used in device metallization. Cu/SAM/SiO2/Si(001) structures show three times higher interface debond energy compared to Cu/SiO2 interfaces due to a strong chemical interaction between Cu and S termini of the MPTMS SAMs. This interaction immobilizes Cu at the Cu/SAM interface and results in a factor-of-4 increase in Cu-diffusion-induced failure times compared with that for structures without SAMs. © 2003 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
68.47.Pe Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces
85.40.Ls Metallization, contacts, interconnects; device isolation

Silicon-based field-effect-transistor cantilever for surface potential mapping

Moon Suhk Suh, J. H. Choi, Young Kuk, and J. Jung

Appl. Phys. Lett. 83, 386 (2003); http://dx.doi.org/10.1063/1.1591231 (3 pages) | Cited 4 times

Online Publication Date: 8 July 2003

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A silicon-based scanning probe with a field effect transistor (FET) has been developed. The FET is integrated onto an atomic force microscope cantilever with a sharpened tip. The commonly used complementary-metal–oxide–semiconductor process has been employed to construct the FET using a silicon-on-insulator wafer. The probe is used to measure a surface potential with a resolution of <300 nm when determined by the edge of patterned SiO2 islands. The probe can be also used to detect local properties on semiconductor surfaces, such as isolated charge distributions on a surface or at subsurface. © 2003 American Institute of Physics.
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07.79.Lh Atomic force microscopes
68.37.Ps Atomic force microscopy (AFM)
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