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14 Jul 2003

Volume 83, Issue 2, pp. 207-403

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Appl. Phys. Lett. 83, 225 (2003); http://dx.doi.org/10.1063/1.1591241 (3 pages)

A. Borowiec, D. M. Bruce, Daniel T. Cassidy, and H. K. Haugen
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High quality atomic-layer-deposited ultrathin Si-nitride gate dielectrics with low density of interface and bulk traps

Anri Nakajima, Quazi D. M. Khosru, Takashi Yoshimoto, Tetsurou Kasai, and Shin Yokoyama

Appl. Phys. Lett. 83, 335 (2003); http://dx.doi.org/10.1063/1.1590424 (3 pages)

Online Publication Date: 8 July 2003

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Interface trap and bulk trap densities of atomic-layer-deposited (ALD) Si-nitride dielectrics have been evaluated by bipolar-voltage-pulse-induced current and electrical-stress-induced leakage-current measurements, respectively. In comparison with the conventional SiO2 dielectrics, significantly lower (∼1/3) interface trap density near the conduction band edge is observed in the ALD Si-nitride dielectrics. Moreover, the observed lower interface and bulk trap generations consistently explain the soft-breakdown-free phenomena observed in capacitors with the ALD Si-nitride gate dielectrics. Enhanced dielectric reliability and several other significant features have made the ALD Si-nitride gate dielectrics a front line candidate for extremely thin (equivalent oxide thickness ∼1 nm) gate dielectrics of sub-100-nm technology nodes. © 2003 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
77.22.Jp Dielectric breakdown and space-charge effects
73.20.At Surface states, band structure, electron density of states

Contact resonances in voltage-modulated force microscopy

C. Harnagea, M. Alexe, D. Hesse, and A. Pignolet

Appl. Phys. Lett. 83, 338 (2003); http://dx.doi.org/10.1063/1.1592307 (3 pages) | Cited 39 times

Online Publication Date: 8 July 2003

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A study of the frequency dependence of the signal in piezoresponse scanning force microscopy of ferroelectric materials has been performed. It is found that, for soft cantilevers, the signal is governed by the cantilever elastic properties. Both ferroelectric-electromechanical and electrostatic interaction contributions to the overall signal were found to depend on the frequency of the testing voltage. Indications for optimal measurement regimes are given. © 2003 American Institute of Physics.
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07.79.-v Scanning probe microscopes and components
77.80.-e Ferroelectricity and antiferroelectricity
77.65.Bn Piezoelectric and electrostrictive constants
68.37.Ps Atomic force microscopy (AFM)

Structural and ferroelectric studies of Bi3.44La0.56Ti3O12 films

M. S. Tomar, R. E. Melgarejo, A. Hidalgo, S. B. Mazumder, and R. S. Katiyar

Appl. Phys. Lett. 83, 341 (2003); http://dx.doi.org/10.1063/1.1592308 (3 pages) | Cited 37 times

Online Publication Date: 8 July 2003

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Bi4−xLaxTi3O12 materials were synthesized by the sol-gel process and thin films were prepared on Pt (i.e., Pt/TiO2/SiO2/Si) substrate by spin coating. Structural properties of the films were examined by x-ray diffraction and Raman spectroscopy. Dielectric and ferroelectric response was studied for 0.63-μm-thick Bi3.44La0.56Ti3O12 films. Butterfly dielectric behavior and remnant polarization of up to Pr = 41 μC/cm2 has been achieved. These films also showed fatigue free response up to 109 switching cycles. On the basis of these studies, large polarization in Bi3.44La0.56Ti3O12 films is attributed to dipole formation which may tilt TiO6 octahedra to Bi2O2 interlayer. © 2003 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
68.55.-a Thin film structure and morphology
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
77.80.B- Phase transitions and Curie point
78.30.Hv Other nonmetallic inorganics
78.66.Nk Insulators
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