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14 Jul 2003

Volume 83, Issue 2, pp. 207-403

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Appl. Phys. Lett. 83, 225 (2003); http://dx.doi.org/10.1063/1.1591241 (3 pages)

A. Borowiec, D. M. Bruce, Daniel T. Cassidy, and H. K. Haugen
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Spatially resolved scanning tunneling luminescence on self-assembled InGaAs/GaAs quantum dots

S. E. J. Jacobs, M. Kemerink, P. M. Koenraad, M. Hopkinson, H. W. M. Salemink, and J. H. Wolter

Appl. Phys. Lett. 83, 290 (2003); http://dx.doi.org/10.1063/1.1588732 (3 pages) | Cited 5 times

Online Publication Date: 8 July 2003

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Scanning-tunneling microscope induced luminescence at low temperature has been used to study the carrier injection into single self-assembled InGaAs/GaAs quantum dots. Electrons are injected from the tip into the dots, which are located in the intrinsic region of a p-i-n junction, and contain excess holes under typical operational conditions. Only a fraction ( ∼ 4%) of the dots is found to be optically active under local electrical excitation. Spatial dependent measurements indicate a highly nonhomogeneous electron diffusion towards the dots. By analyzing the spatial dependence of individual peaks in the measured spectra, the contributions of individual dots to the total, multidot spectrum can be disentangled. © 2003 American Institute of Physics.
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78.67.Hc Quantum dots
78.66.Fd III-V semiconductors
73.21.La Quantum dots
78.60.Fi Electroluminescence
81.05.Ea III-V semiconductors

Optimizing and quantifying dopant mapping using a scanning electron microscope with a through-the-lens detector

C. Schönjahn, R. F. Broom, C. J. Humphreys, A. Howie, and S. A. M. Mentink

Appl. Phys. Lett. 83, 293 (2003); http://dx.doi.org/10.1063/1.1592302 (3 pages) | Cited 20 times

Online Publication Date: 8 July 2003

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Although dopant contrast in the scanning electron microscope has been known for a long time, its quantification is still a matter of debate mainly due to the lack of understanding of the contrast mechanism. Here we show that dopant contrast can be usefully increased at low extraction voltages. The effect may be related to the different angular and energy distribution of secondary electrons emitted from the p and n regions and for quantitative work should be studied over the full range of extraction potential. © 2003 American Institute of Physics.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
61.72.S- Impurities in crystals
81.70.Jb Chemical composition analysis, chemical depth and dopant profiling
29.40.-n Radiation detectors
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy

K. Nakajima, S. Joumori, M. Suzuki, K. Kimura, T. Osipowicz, K. L. Tok, J. Z. Zheng, A. See, and B. C. Zhang

Appl. Phys. Lett. 83, 296 (2003); http://dx.doi.org/10.1063/1.1592310 (3 pages) | Cited 7 times

Online Publication Date: 8 July 2003

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Strain depth profiles in HfO2 (3 nm)/Si(001) prepared by atomic-layer chemical vapor deposition have been measured using high-resolution Rutherford backscattering spectroscopy in combination with a channeling technique. It is found that the Si lattice is compressed in the vertical direction around the interface. The observed maximum strain is about 1% at the interface and the strained region extends down to ∼ 3 nm from the interface. © 2003 American Institute of Physics.
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68.35.Ct Interface structure and roughness
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Effect of oxygen on the electronic band structure in ZnOxSe1−x alloys

W. Shan, W. Walukiewicz, J. W. Ager, K. M. Yu, J. Wu, E. E. Haller, Y. Nabetani, T. Mukawa, Y. Ito, and T. Matsumoto

Appl. Phys. Lett. 83, 299 (2003); http://dx.doi.org/10.1063/1.1592885 (3 pages) | Cited 31 times

Online Publication Date: 8 July 2003

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The effect of alloying small amounts of ZnO with ZnSe on the electronic band structure has been studied. Optical transitions in molecular-beam-epitaxy-grown ZnOxSe1−x epitaxial films (0 ⩽ x ⩽ 1.35%) were investigated using photoreflectance and photoluminescence spectroscopies. The fundamental band-gap energy of the alloys was found to decrease at a rate of about 0.1 eV per atomic percent of oxygen. The pressure dependence of the band gap was also found to be strongly affected by O incorporation. Both the effects can be quantitatively explained by an anticrossing interaction between the extended states of the conduction band of ZnSe and the highly localized oxygen states located at approximately 0.22 eV above the conduction-band edge. © 2003 American Institute of Physics.
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71.20.Nr Semiconductor compounds
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
71.55.Gs II-VI semiconductors

Single-electron transistor based on modulation-doped SiGe heterostructures

A. Notargiacomo, L. Di Gaspare, G. Scappucci, G. Mariottini, F. Evangelisti, E. Giovine, and R. Leoni

Appl. Phys. Lett. 83, 302 (2003); http://dx.doi.org/10.1063/1.1592883 (3 pages) | Cited 13 times

Online Publication Date: 8 July 2003

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We report the characterization of a single-electron transistor based on bended wires fabricated on modulation-doped SiGe two-dimensional electron gas. Electrical measurements show a diamond-shaped stability plot and a nonperiodic sequence of conductance peaks. The device behavior suggests the presence of disorder-induced multiple islands along the wire. Conductance oscillations remain well pronounced above liquid helium temperature. © 2003 American Institute of Physics.
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85.35.Gv Single electron devices
73.23.Hk Coulomb blockade; single-electron tunneling
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Oxygen profile engineering in silicon by germanium addition and high-temperature annealing

Zhenghua An, Paul K. Chu, Miao Zhang, Chuanling Men, and Chenglu Lin

Appl. Phys. Lett. 83, 305 (2003); http://dx.doi.org/10.1063/1.1592884 (3 pages) | Cited 1 time

Online Publication Date: 8 July 2003

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The formation of multilayer structures in oxygen-implanted silicon by the introduction of germanium is reported. Our results show that the oxygen distribution can be split under carefully controlled annealing conditions. The typical annealing process consists of first raising the furnace temperature from 600 to 1200 °C within 30 min and then holding the temperature at 1200 °C for 2 h. The faster crystallization rate of amorphous silicon germanium (SiGe) and germanium rejection from the oxide contribute to the final multilayer structure. Our findings suggest that oxygen profile engineering is possible and single-energy ion implantation can be utilized to fabricate multilayer structures containing multiple buried oxide layers. In addition, our results suggest that, in SiGe-on-insulator fabrication, the annealing step at a moderate temperature or a slow temperature ramp-up rate during the high-temperature annealing step is much more critical than in conventional silicon-on-insulator fabrication. © 2003 American Institute of Physics.
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61.72.uf Ge and Si
68.65.Ac Multilayers
61.72.S- Impurities in crystals
61.72.Cc Kinetics of defect formation and annealing
64.75.-g Phase equilibria

Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal–oxide–semiconductor field-effect transistors for high-k-HfO2 dielectric

C. W. Yang, Y. K. Fang, C. H. Chen, S. F. Chen, C. Y. Lin, C. S. Lin, M. F. Wang, Y. M. Lin, T. H. Hou, C. H. Chen, L. G. Yao, S. C. Chen, and M. S. Liang

Appl. Phys. Lett. 83, 308 (2003); http://dx.doi.org/10.1063/1.1592634 (3 pages) | Cited 20 times

Online Publication Date: 8 July 2003

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Hafnium dioxide (HfO2) gate dielectrics formed by the atomic layer deposition (ALD) process were fabricated to investigate the flatband voltage shift (ΔVFB) relative to SiO2. It is found that the direction of ΔVFB depends on the Fermi level position in the gate material, which shows respective positive and negative shifts in n-type and p-type metal–oxide–semiconductor field-effect transistors (MOSFETs), regardless of the substrate type. The opposite direction in the flatband voltage shift is attributed to both acceptor- and donor-like interface states existing at the interface between the polycrystalline-silicon (poly-Si) gate and HfO2 dielectric. A model is proposed to explain the effects of poly-Si gate type on the flatband voltage shift in MOSFETs. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
73.20.Hb Impurity and defect levels; energy states of adsorbed species
85.30.De Semiconductor-device characterization, design, and modeling
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag

D. L. Hibbard, S. P. Jung, C. Wang, D. Ullery, Y. S. Zhao, H. P. Lee, W. So, and H. Liu

Appl. Phys. Lett. 83, 311 (2003); http://dx.doi.org/10.1063/1.1591233 (3 pages) | Cited 71 times

Online Publication Date: 8 July 2003

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We report on a high reflectance low resistance multilayer contact to p-GaN composed of a thin oxidized Ni/Au bilayer overcoated with a thick Al or Ag layer and then capped by Ni/Au. Measurements on 500 μm diameter light emitting diode-like test structures show an operating voltage below 4 V at 20 mA that is comparable to identical devices fabricated with a conventional Ni/Au contact. Back surface light emission is about 70% greater than that from devices with the Ni/Au contact due to lower light absorption by the Al or Ag. Performance for both Al and Ag based contacts is stable at temperatures of up to around 100 °C. © 2003 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
85.60.Jb Light-emitting devices
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