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21 Jul 2003

Volume 83, Issue 3, pp. 407-587

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Appl. Phys. Lett. 83, 575 (2003); http://dx.doi.org/10.1063/1.1594830 (3 pages)

P. Yu, M. Mustata, J. J. Turek, P. M. W. French, M. R. Melloch, and D. D. Nolte
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n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at 550–750 °C

Sarah Estrada, Andrew Huntington, Andreas Stonas, Huili Xing, Umesh Mishra, Steven DenBaars, Larry Coldren, and Evelyn Hu

Appl. Phys. Lett. 83, 560 (2003); http://dx.doi.org/10.1063/1.1592887 (3 pages) | Cited 4 times

Online Publication Date: 16 July 2003

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We recently reported an initial AlGaAs/GaAs/GaN heterojunction bipolar transistor (HBT), formed via wafer fusion of a p-GaAs base to an n-GaN collector. The device was formed by fusion at a high temperature (750 °C) and demonstrated low output current ( ∼ 100 A/cm2) and low common-emitter current gain (0.5). This letter describes a systematic variation of fusion temperature (550–750 °C) in the formation of the HBT, and reveals the correlation between fusion temperature, base–collector leakage, and emitter–base degradation. With reduced fusion temperatures, devices demonstrate improvements in leakage, output current ( ∼ 1 kA/cm2), and common-emitter current gain (>1). Optimization of device structure should further improve performance. © 2003 American Institute of Physics.
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85.30.Pq Bipolar transistors
85.30.De Semiconductor-device characterization, design, and modeling

Band alignment on a nanoscopically patterned inorganic–organic interface

G. Koller, F. P. Netzer, and M. G. Ramsey

Appl. Phys. Lett. 83, 563 (2003); http://dx.doi.org/10.1063/1.1592886 (3 pages) | Cited 6 times

Online Publication Date: 16 July 2003

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The band alignment of organic semiconductors on a nanoscopically patterned surface is investigated for submonolayer coverages to thin molecular films of bithiophene, using ultraviolet photoelectron spectroscopy and work function measurements. The Cu (110)–(2×1)O stripe phase, used as a substrate, consists of alternating stripes of clean and oxygen passivated copper, with a respective stripe diameter of three to four times the molecular length. For the first molecular layer, a superposition of bithiophene spectra, offset from each other by 1 eV, reflecting the interface dipole differences on Cu (110) and Cu (110)–p(2×1)O, was found. However, after completion of the second layer, the observed band alignment between the substrate and the overlayer is determined by the average interface potential and the underlying substrate pattern is obscured. © 2003 American Institute of Physics.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
71.20.Rv Polymers and organic compounds
68.47.De Metallic surfaces
79.60.Jv Interfaces; heterostructures; nanostructures
73.30.+y Surface double layers, Schottky barriers, and work functions
81.65.Rv Passivation

III-nitride ultraviolet light-emitting diodes with delta doping

K. H. Kim, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 83, 566 (2003); http://dx.doi.org/10.1063/1.1593212 (3 pages) | Cited 24 times

Online Publication Date: 16 July 2003

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We present the results on the fabrication and characterization of 340 nm UV light-emitting diodes (LEDs) based on InAlGaN quaternary alloys grown by metalorganic chemical vapor deposition. By employing δ doping in the n- and p-type layers, we have demonstrated enhanced LED structural quality and emission efficiency. Combining with our interconnected microdisk LED architecture, the output power of a 300×300 μm2 bare LED chip measured from the sapphire side reached 50 μW under a standard dc operation condition (20 mA) at 4.6 V and 1.6 mW under a pulsed driving current. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.72.Bj Visible and ultraviolet sources

Confinement of triplet energy on phosphorescent molecules for highly-efficient organic blue-light-emitting devices

Shizuo Tokito, Toshiki Iijima, Yoshiyuki Suzuri, Hiroshi Kita, Toshimitsu Tsuzuki, and Fumio Sato

Appl. Phys. Lett. 83, 569 (2003); http://dx.doi.org/10.1063/1.1594834 (3 pages) | Cited 264 times

Online Publication Date: 16 July 2003

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We have significantly improved the emission efficiency in an organic light-emitting device (OLED) based on iridium (III)bis[(4,6-di-fluoropheny)-pyridinato-N,C2′]picolinate (FIrpic). To improve the efficiency, 4,4′-bis(9-carbazolyl)-2,2′-dimethyl-biphenyl, which has a high triplet energy, was used as the carrier-transporting host for the emissive layer. The FIrpic-based OLED exhibited a maximum external quantum efficiency of 10.4%, corresponding to a current efficiency of 20.4 cd/A, and a maximum power efficiency of 10.5 lm/W. The efficiency was drastically improved compared to that of a previously reported FIrpic-based OLED. This result indicates that triplet energy is efficiently confined on FIrpic molecules, resulting in the high efficiency. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.55.Kz Solid organic materials
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds

GaN/AlN-based quantum-well infrared photodetector for 1.55 μm

Daniel Hofstetter, Sven-Silvius Schad, Hong Wu, William J. Schaff, and Lester F. Eastman

Appl. Phys. Lett. 83, 572 (2003); http://dx.doi.org/10.1063/1.1594265 (3 pages) | Cited 14 times

Online Publication Date: 16 July 2003

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We report optical absorption and photocurrent measurements on a GaN/AlN-based superlattice. The optical absorption has a full width at half maximum of 120 meV and takes place at an energy of 660 meV (5270 cm−1); this corresponds to a wavelength of 1.9 μm. While the optical absorption remained unchanged up to room temperature, the photocurrent signal could be observed up to 170 K. With respect to the optical absorption, the photocurrent peak was slightly blueshifted (710 meV/5670 cm−1) and had a narrower width of 115 meV. Using this quantum-well infrared photodetector, we were able to measure the spectrum of a 1.55 μm superluminescent light-emitting diode. © 2003 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.07.St Quantum wells
78.67.De Quantum wells
81.05.Ea III-V semiconductors
73.63.Hs Quantum wells
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
72.40.+w Photoconduction and photovoltaic effects
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
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