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21 Jul 2003

Volume 83, Issue 3, pp. 407-587

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 575 (2003); http://dx.doi.org/10.1063/1.1594830 (3 pages)

P. Yu, M. Mustata, J. J. Turek, P. M. W. French, M. R. Melloch, and D. D. Nolte
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Investigation of electrical conduction in carbon-doped silicon oxide using a voltage ramp method

K. Y. Yiang, W. J. Yoo, Q. Guo, and Ahila Krishnamoorthy

Appl. Phys. Lett. 83, 524 (2003); http://dx.doi.org/10.1063/1.1592618 (3 pages) | Cited 14 times

Online Publication Date: 16 July 2003

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Electrical conduction in carbon-doped silicon oxide (SiOC) is investigated over the electric field range of 0 MV/cm to the breakdown field at 300 K. Below 1.4 MV/cm, the dominant conduction mechanisms are electron hopping (<0.2 MV/cm) and Schottky emission (0.2 to 1.4 MV/cm). Poole–Frenkel emission at higher fields (>1.4 MV/cm) confirms the presence and role of electron traps in the conduction of SiOC. Near breakdown field (1.7 to 2.08 MV/cm), Fowler–Nordheim tunneling occurs and this is the major cause of dielectric breakdown in SiOC. The effective dielectric constant of SiOC in an integrated Cu damascene structure is derived from both experimental data and emission modeling. © 2003 American Institute of Physics.
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73.61.Ng Insulators
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
85.40.Ls Metallization, contacts, interconnects; device isolation
77.22.Jp Dielectric breakdown and space-charge effects
73.43.Jn Tunneling
73.50.Fq High-field and nonlinear effects
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
77.22.Ch Permittivity (dielectric function)

Monodomain versus polydomain piezoelectric response of 0.67Pb(Mg1/3Nb2/3)O3–0.33PbTiO3 single crystals along nonpolar directions

Dragan Damjanovic, Marko Budimir, Matthew Davis, and Nava Setter

Appl. Phys. Lett. 83, 527 (2003); http://dx.doi.org/10.1063/1.1592880 (3 pages) | Cited 47 times

Online Publication Date: 16 July 2003

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Using recently published experimental data we calculated the piezoelectric response of rhombohedral 0.67Pb(Mg1/3Nb2/3)O3–0.33PbTiO3 monodomain single crystals along arbitrary directions. The calculations indicate that the value of the longitudinal piezoelectric coefficient along the [001] axis of the pseudocubic system ([111] axis of the rhombohedral system) of a monodomain crystal is close to the value determined experimentally along the same direction of a multidomain crystal with a so-called “engineered domain state.” The results thus show that the large piezoelectric response in this material is dominated by intrinsic crystal lattice effects and that the multidomain state has a relatively minor effect (<20%). In addition, calculations predict a transverse piezoelectric coefficient >1900 pC/N for certain directions of the monodomain crystal. © 2003 American Institute of Physics.
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77.65.Bn Piezoelectric and electrostrictive constants
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis

Linear relationship between H+-trapping reaction energy and defect generation: Insight into nitrogen-enhanced negative bias temperature instability

Shyue Seng Tan, T. P. Chen, Jia Mei Soon, Kian Ping Loh, C. H. Ang, W. Y. Teo, and L. Chan

Appl. Phys. Lett. 83, 530 (2003); http://dx.doi.org/10.1063/1.1593211 (3 pages) | Cited 10 times

Online Publication Date: 16 July 2003

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In this letter, we report a first-principles calculation which is well correlated to experiment on the role of nitrogen at Si/SiOxNy interface in negative bias temperature instability (NBTI). Our calculation shows that nitrogen’s lone pair electrons can trap dissociated hydrogen species more easily than oxygen. After trapping, a positive charge complex is formed and weakening of bond strength is observed at trapping site. Furthermore, as nitrogen concentration goes beyond 8 at. %, the neighboring effect from nitrogen starts to play a role in further degradation. The interfacial nitrogen dependence of the NBTI-induced defect generation is found to coincide with that of the H+-trapping reaction energy. Eventually, a linear correlation is found between the reaction energy and the defect generation. This provides an insight into nitrogen-enhanced NBTI. © 2003 American Institute of Physics.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
71.15.Nc Total energy and cohesive energy calculations
68.35.Ct Interface structure and roughness
73.20.At Surface states, band structure, electron density of states

Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks

R. J. Carter, E. Cartier, A. Kerber, L. Pantisano, T. Schram, S. De Gendt, and M. Heyns

Appl. Phys. Lett. 83, 533 (2003); http://dx.doi.org/10.1063/1.1592639 (3 pages) | Cited 57 times

Online Publication Date: 16 July 2003

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We demonstrate that a forming gas annealing temperature of 520 °C significantly improves interface state passivation for SiO2/HfO2-based/polycrystalline-Si gate stacks as compared to annealing at 420 °C normally used for SiO2/polycrystalline-Si gate stacks. We also show that the initial interface state density is dependent upon the interfacial SiO2 preparation, whereby a chemically grown oxide has a higher initial interface state density as compared to a thermally grown oxide. © 2003 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.Rv Passivation
73.20.-r Electron states at surfaces and interfaces
61.72.Cc Kinetics of defect formation and annealing

Scaling behavior of ferroelectric hysteresis loop in pulsed-laser-deposited SrBi2Ta2O9 thin film

Jong-Ho Park, Chung-Sik Kim, Byung-Chun Choi, Byung Kee Moon, Jung Hyun Jeong, and Ill Won Kim

Appl. Phys. Lett. 83, 536 (2003); http://dx.doi.org/10.1063/1.1591997 (3 pages) | Cited 19 times

Online Publication Date: 16 July 2003

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Ferroelectric SrBi2Ta2O9 thin films were grown on a highly oriented Pt/Ti/SiO2/Si substrates using pulsed laser ablation. The hysteresis loop of ferroelectric SrBi2Ta2O9 was studied as a function of applied field amplitude. A scaling analysis of ferroelectric hysteresis loop area showed A∝Eα. The value of scaling exponent, α = 0.40, is not similar to the reported theoretical and experimental values. This result shows the possibility that both ferroelectric bulk and thin-film systems may have different universal behaviors. Influence of potential in the surface of SrBi2Ta2O9 thin film was measured in the dc applied field range from 0 to 8 V by using electro force microscopy. Roughness of surface potential of SrBi2Ta2O9 thin film changed rapidly around the coercive voltage, Vc ∼ 1.5 V. It is believed that the switching effect of SrBi2Ta2O9 thin film includes surface polarization at the surface of the thin film as well as pure spontaneous polarization in the bulk. © 2003 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
81.15.Fg Pulsed laser ablation deposition
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization
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