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21 Jul 2003

Volume 83, Issue 3, pp. 407-587

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Appl. Phys. Lett. 83, 575 (2003); http://dx.doi.org/10.1063/1.1594830 (3 pages)

P. Yu, M. Mustata, J. J. Turek, P. M. W. French, M. R. Melloch, and D. D. Nolte
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Characteristics and field emission of conducting poly (3,4-ethylenedioxythiophene) nanowires

B. H. Kim, M. S. Kim, K. T. Park, J. K. Lee, D. H. Park, J. Joo, S. G. Yu, and S. H. Lee

Appl. Phys. Lett. 83, 539 (2003); http://dx.doi.org/10.1063/1.1592004 (3 pages) | Cited 53 times

Online Publication Date: 16 July 2003

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Conducting poly (3,4-ethylenedioxythiophene) nanowires were synthesized by using an electrochemical polymerization method with a nanoporous template. Scanning and transmission electron microscopy confirmed the formation of conducting polymer nanowires (CPNWs) with an open end. The formation and the electrical properties of the CPNWs formed were dependent on synthetic conditions, such as the doping level, the polymerization time, and the applied current. The measured electrical conductivity of a single strand of CPNW was ∼ 3.4×10−3 S/cm at room temperature. From the ultraviolet and visible absorbance spectra, we observed a π–π∗ transition at ∼ 2.1 eV for the de-doped systems. A field emission cell of CPNW nanotips was fabricated. The turn-on field of the CPNWs was 3.5 ∼ 4 V/μm at 10 μA/cm2, and the current density increased up to 100 μA/cm2 at ∼ 4.5 V/μm. The field enhancement factor of CPNW nanotips was ∼ 1200, which is comparable to those of carbon nanotubes. © 2003 American Institute of Physics.
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72.80.Le Polymers; organic compounds (including organic semiconductors)
79.70.+q Field emission, ionization, evaporation, and desorption
73.63.Nm Quantum wires
78.40.Me Organic compounds and polymers
82.45.Wx Polymers and organic materials in electrochemistry
82.35.-x Polymers: properties; reactions; polymerization
82.45.Yz Nanostructured materials in electrochemistry

Density functional theory study of HfCl4, ZrCl4, and Al(CH3)3 decomposition on hydroxylated SiO2: Initial stage of high-k atomic layer deposition

L. Jeloaica, A. Estève, M. Djafari Rouhani, and D. Estève

Appl. Phys. Lett. 83, 542 (2003); http://dx.doi.org/10.1063/1.1587261 (3 pages) | Cited 21 times

Online Publication Date: 16 July 2003

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The initial stage of atomic layer deposition of HfO2, ZrO2, and Al2O3 high-k films, i.e., the decomposition of HfCl4, ZrCl4, and Al(CH3)3 precursor molecules on an OH-terminated SiO2 surface, is investigated within density functional theory. The energy barriers are determined using artificial activation of vibrational normal modes. For all precursors, reaction proceeds through the formation of intermediate complexes that have equivalent formation energies (∼−0.45 eV), and results in HCl and CH4 formation with activation energies of 0.88, 0.91, and 1.04 eV for Hf, Zr, and Al based precursors, respectively. The reaction product of Al(CH3)3 decomposition is found to be more stable (by −1.45 eV) than the chemisorbed intermediate complex compared to the endothermic decomposition of HfCl4 and ZrCl4 chemisorbed precursors (0.26 and 0.29 eV, respectively). © 2003 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.33.Ya Chemistry of MOCVD and other vapor deposition methods
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
77.55.-g Dielectric thin films
68.55.A- Nucleation and growth
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
82.60.Cx Enthalpies of combustion, reaction, and formation
68.43.Bc Ab initio calculations of adsorbate structure and reactions
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Competing influence of damage buildup and lattice vibrations on ion range profiles in Si

M. Posselt, M. Mäder, R. Grötzschel, and M. Behar

Appl. Phys. Lett. 83, 545 (2003); http://dx.doi.org/10.1063/1.1594281 (3 pages) | Cited 4 times

Online Publication Date: 16 July 2003

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Phosphorus depth profiles in Si obtained by 140 keV implantation in the [001] axial channel direction and in a direction 7° off axis are investigated at two different doses (5×1013 and 5×1015 cm−2) for implantation temperatures of 350 °C and room temperature (RT). At low dose and at channeling incidence, the penetration depth of implanted ions is higher at RT than at 350 °C. This behavior is caused by the dechanneling of lattice vibrations. At high dose, the temperature dependence of the shape of the implantation profile is opposite that at low dose, due to enhanced dechanneling by defect accumulation at RT. On the other hand, damage buildup does not occur at elevated temperature. The temperature dependence of the profiles obtained by tilted implantation is much less than for the channeled implants. The P profiles measured can be reproduced very well by atomistic simulations which take into account both lattice vibrations and defect accumulation during ion bombardment. © 2003 American Institute of Physics.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
63.20.-e Phonons in crystal lattices
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Characteristics of plasma processed SiC nanocrystallites and nanorods

S. B. Qadri, M. A. Imam, C. R. Feng, B. B. Rath, M. Yousuf, and S. K. Singh

Appl. Phys. Lett. 83, 548 (2003); http://dx.doi.org/10.1063/1.1594831 (3 pages) | Cited 11 times

Online Publication Date: 16 July 2003

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Nanoparticles and nanorods of SiC were synthesized using arc-plasma processing of coarse particles. X-ray diffraction and Raman spectroscopic studies showed the presence of β-SiC and carbon nanotubes in the starting coarse particles and SiC nanorods in the ultrafine particles produced by plasma processing. Scanning electron microscopy and transmission electron microscopy confirmed the presence of carbon nanotubes in the starting material and nanorods of SiC in the plasma-processed samples. © 2003 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials
52.77.Dq Plasma-based ion implantation and deposition
81.07.Wx Nanopowders
81.16.-c Methods of micro- and nanofabrication and processing
81.07.De Nanotubes
78.30.Hv Other nonmetallic inorganics
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
68.37.Lp Transmission electron microscopy (TEM)
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

Nanoring formation by direct-write inorganic electron-beam lithography

N. Jiang, G. G. Hembree, J. C. H. Spence, J. Qiu, F. J. Garcia de Abajo, and J. Silcox

Appl. Phys. Lett. 83, 551 (2003); http://dx.doi.org/10.1063/1.1592895 (3 pages) | Cited 17 times

Online Publication Date: 16 July 2003

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A direct-write inorganic lithography technique is described which is capable of forming nanoscale rings of amorphous metals and semiconductors in glasses. Near-edge electron energy loss spectroscopy and electron diffraction using a subnanometer probe are used to analyze the composition and formation mechanism of these nanorings. The optical absorption cross section of one ring is calculated by multiple scattering methods. Applications in quantum electronics and the design of media with dielectric properties are suggested. © 2003 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.16.Nd Micro- and nanolithography
79.20.Uv Electron energy loss spectroscopy
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.40.-q Absorption and reflection spectra: visible and ultraviolet

Optical recording in silver-doped glasses by a femtosecond laser

Yu. Kaganovskii, I. Antonov, D. Ianetz, M. Rosenbluh, J. Ihlemann, S. Mueller, G. Marowsky, and A. A. Lipovskii

Appl. Phys. Lett. 83, 554 (2003); http://dx.doi.org/10.1063/1.1593828 (3 pages) | Cited 2 times

Online Publication Date: 16 July 2003

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Glass embedded with silver nanoclusters has been used to record interference patterns of two 500-fs, 496-nm, laser pulses. The recording is based on optical heating of metal clusters and their subsequent motion in temperature gradients. Estimates of the kinetics of cluster motion and growth are in good agreement with experiments. © 2003 American Institute of Physics.
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42.70.Ln Holographic recording materials; optical storage media
42.40.Ht Hologram recording and readout methods
42.70.Ce Glasses, quartz
42.40.Eq Holographic optical elements; holographic gratings
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
66.30.Xj Thermal diffusivity

Microscale electrospinning of polymer nanofiber interconnections

Royal Kessick and Gary Tepper

Appl. Phys. Lett. 83, 557 (2003); http://dx.doi.org/10.1063/1.1594283 (3 pages) | Cited 9 times

Online Publication Date: 16 July 2003

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Polymer fiber interconnects were produced between microscale features on a substrate using only electrostatic forces. Electric-field-driven directed growth of nanoscale carboxymethylcellulose fibers was achieved between microscale droplets of a concentrated polymer solution. The fibers were studied using atomic force and scanning electron microscopy and were observed to emerge from the tip of conical protrusions formed at the surface of the droplets. The conical structures appear to be analogous to the characteristic Taylor cones formed in an electrospinning process and the process is interpreted as a microscale version of electrospinning requiring significantly lower driving potentials. © 2003 American Institute of Physics.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
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