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28 Jul 2003

Volume 83, Issue 4, pp. 593-811

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 611 (2003); http://dx.doi.org/10.1063/1.1595724 (3 pages)

Chung-Chih Wu, Chieh-Wei Chen, and Ting-Yi Cho
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Experimental observation of photonic-crystal emission near a photonic band edge

Shawn-Yu Lin, J. G. Fleming, and I. El-Kady

Appl. Phys. Lett. 83, 593 (2003); http://dx.doi.org/10.1063/1.1594263 (3 pages) | Cited 34 times

Online Publication Date: 22 July 2003

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A three-dimensional tungsten photonic crystal is realized with a photonic band edge at λ∼4 μm wavelength. Its thermal emission is suppressed in the band gap regime and, at the same time, exhibits sharp peaks near the band edge. It is further observed that energy conversion efficiency from one side of the sample reaches η∼40%. This finding is attributed to a complete metallic photonic band gap in the infrared (λ⩾6 μm) and the enhanced density of photon states near the band edge of our tungsten photonic crystal. © 2003 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
42.70.Qs Photonic bandgap materials
42.50.-p Quantum optics
42.55.Tv Photonic crystal lasers and coherent effects

650-nm AlGaInP multiple-quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine

Jian-Rong Dong, Jing-Hua Teng, Soo-Jin Chua, Boon-Chin Foo, Yan-Jun Wang, Hai-Rong Yuan, and Shu Yuan

Appl. Phys. Lett. 83, 596 (2003); http://dx.doi.org/10.1063/1.1593782 (3 pages) | Cited 6 times

Online Publication Date: 22 July 2003

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Using tertiarybutylphosphine (TBP) as phosphorus precursor, high-quality AlGaInP epilayers and AlGaInP/GaInP multiple-quantum-well (MQW) structures have been grown by metalorganic chemical vapor deposition. The photoluminescence results indicate that the AlGaInP materials are as good as those grown using PH3 in terms of optical quality. Finally, AlGaInP MQW red laser structures have been grown, and the electrically pumped AlGaInP red lasers grown by TBP have been demonstrated with the emission wavelength of 647 nm, indicating that TBP can be used to grow high-quality AlGaInP epilayers and AlGaInP-based red lasers, which presently is dominated by the highly toxic gas source PH3. © 2003 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors

Bipolar cascade lasers at emitting wavelengths near 2 μm

Rui Q. Yang and Yueming Qiu

Appl. Phys. Lett. 83, 599 (2003); http://dx.doi.org/10.1063/1.1595713 (3 pages) | Cited 2 times

Online Publication Date: 22 July 2003

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Broad-area InGaAs/InP-based bipolar cascade lasers were demonstrated at emitting wavelengths near 2 μm and their spectral characteristics were investigated. These broad-area lasers operated at temperatures up to 205 K in continuous wave mode and up to room temperature in pulsed mode. Distinct spectral features were observed at high temperatures with larger currents and bias, which may result from significant Stark effects and increased excited state transitions. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.21.Fg Quantum wells
78.67.De Quantum wells
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Comparison of intraband absorption and photocurrent in InAs/GaAs quantum dots

A. M. Adawi, E. A. Zibik, L. R. Wilson, A. Lemaître, J. W. Cockburn, M. S. Skolnick, M. Hopkinson, and G. Hill

Appl. Phys. Lett. 83, 602 (2003); http://dx.doi.org/10.1063/1.1592892 (3 pages) | Cited 19 times

Online Publication Date: 22 July 2003

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We present a comparative study of mid-infrared absorption and photocurrent measurements of self assembled InAs/GaAs quantum dots. A thermally activated bound/state–bound-state transition, as well as bound–wetting-layer and bound–continuum transitions are identified. By analyzing the temperature dependence of these transitions using absorption and photocurrent spectroscopies we are able to explain the previously reported discrepancies between the two measurement techniques. The activation energy (≅100 meV) for the bound–bound transition indicates that thermal escape of electrons occurs directly to continuum states. Evidence for preferential escape within the inhomogeneous distribution of dots is presented. © 2003 American Institute of Physics.
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78.67.Hc Quantum dots
73.21.La Quantum dots
78.30.Fs III-V and II-VI semiconductors
73.50.Pz Photoconduction and photovoltaic effects
81.16.Dn Self-assembly
81.07.Ta Quantum dots

Nonlinear optical effect of organic crystal heterostructures of benzylidene-aniline derivatives by two-step molecular-beam heteroepitaxy

Tomoya Yamashiki, Seiji Fukuda, Keiji Tsuda, and Tetsuya Gotoh

Appl. Phys. Lett. 83, 605 (2003); http://dx.doi.org/10.1063/1.1595717 (3 pages) | Cited 3 times

Online Publication Date: 22 July 2003

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A nonlinear optical waveguide with organic crystals based on 4′-nitrobenzyliden-3acetamino-4-methoxyaniline (MNBA) and its derivative was fabricated by organic molecular-beam epitaxy and operated as an electro-optic (EO) device. It has been proved that an EO coefficient r11 of MNBA significantly depends on the thickness of the 4′-nitrobenzyliden3-ethylcarbonylamino-4-methoxyaniline (MNBA–Et) homoepitaxial layer. Insertion of a thicker MNBA–Et homoepitaxial layer enlarges r11 of MNBA heteroepitaxial layer from 30 to more than 150 pm/V. © 2003 American Institute of Physics.
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42.65.Wi Nonlinear waveguides
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.70.Mp Nonlinear optical crystals
42.70.Jk Polymers and organics
42.79.Gn Optical waveguides and couplers

Photofabrication of wood-pile three-dimensional photonic crystals using four-beam laser interference

Satoru Shoji, Hong-Bo Sun, and Satoshi Kawata

Appl. Phys. Lett. 83, 608 (2003); http://dx.doi.org/10.1063/1.1595720 (3 pages) | Cited 34 times

Online Publication Date: 22 July 2003

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We present a method for fabricating three-dimensional photonic crystal structures by means of an interference pattern of laser beams. Two orthogonal square lattice rod-arrays which compose the wood-pile photonic crystal structure are fabricated by interference of four laser beams into photopolymerizable resin. The lattice constant of the photonic crystal can be selected freely by incident angles of laser beams without any deformations of the lattice symmetry and the lattice elements. The proposed method does not require complicated multiple processes compared with the layer-by-layer fabrication method, and thick wood-pile photonic crystals are immediately produced with high precision. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.25.Hz Interference
42.70.Jk Polymers and organics
42.62.-b Laser applications

Three-color reconfigurable organic light-emitting devices

Chung-Chih Wu, Chieh-Wei Chen, and Ting-Yi Cho

Appl. Phys. Lett. 83, 611 (2003); http://dx.doi.org/10.1063/1.1595724 (3 pages) | Cited 11 times

Online Publication Date: 22 July 2003

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This report reveals utilization of phase transitions and corresponding changes in physical properties of organic semiconductors for implementing reconfigurable organic optoelectronic devices, i.e., a device whose configurations and characteristics can be programed after fabrication. Specifically, glass transitions of amorphous molecular materials have been exploited to demonstrate reconfigurable organic light-emitting devices (OLEDs) capable of generating any of the three primary colors. The capability to pattern such devices into fine color pixels with thermal imaging renders it attractive for applications in high-resolution full-color OLED displays and as active optical memory devices. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds
42.79.Vb Optical storage systems, optical disks
73.61.Ph Polymers; organic compounds

Diffraction properties of two-dimensional photonic crystals

G. von Freymann, W. Koch, D. C. Meisel, M. Wegener, M. Diem, A. Garcia-Martin, S. Pereira, K. Busch, J. Schilling, R. B. Wehrspohn, and U. Gösele

Appl. Phys. Lett. 83, 614 (2003); http://dx.doi.org/10.1063/1.1596731 (3 pages) | Cited 22 times

Online Publication Date: 22 July 2003

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We show that the envelope of the diffraction efficiency of a two-dimensional photonic crystal can exhibit spectral regions of very small diffraction efficiency (<5×10−3), while in other regions, the diffraction efficiency is near unity. The experimental results on higher bands of hexagonal, silicon-based photonic crystals agree well with corresponding numerical calculations and highlight the prominent role of the surface termination, an aspect which cannot be described by the photonic band structure alone. We speculate about possible applications of such additional spectral filters in Raman and photoluminescence spectroscopy. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.79.Dj Gratings

1.47–1.49-μm InGaAsP/InP diode laser arrays

A. Gourevitch, G. Belenky, D. Donetsky, B. Laikhtman, D. Westerfeld, C. W. Trussell, H. An, Z. Shellenbarger, and R. Martinelli

Appl. Phys. Lett. 83, 617 (2003); http://dx.doi.org/10.1063/1.1596379 (3 pages) | Cited 4 times

Online Publication Date: 22 July 2003

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Continuous-wave power of 25 W at 1.47-μm was obtained from a 20-element, 1-cm-wide, one-dimensional diode laser array mounted in a microchannel water-cooled heat sink. The coolant temperature was 16 °C. A two-dimensional array comprising four laser bars achieved a quasi-cw output of 110 W at a wavelength of 1.49 μm, with an 8–9-nm full width at half-maximum spectrum width. The coolant temperature was 18 °C. We developed a theoretical model that describes array heating. Thermal resistances of 0.56, 0.4, and 0.34 K/W were experimentally and theoretically determined for arrays with fill factors of 10%, 20%, and 40%, respectively. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Second-harmonic generation through optimized modal phase matching in semiconductor waveguides

K. Moutzouris, S. Venugopal Rao, M. Ebrahimzadeh, A. De Rossi, M. Calligaro, V. Ortiz, and V. Berger

Appl. Phys. Lett. 83, 620 (2003); http://dx.doi.org/10.1063/1.1596726 (3 pages) | Cited 23 times

Online Publication Date: 22 July 2003

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We report optical second-harmonic generation (SHG) through modal phase matching in GaAs/AlGaAs semiconductor waveguides. Using femtosecond pulses, both type-I and type-II SHG is demonstrated for fundamental wavelengths near 1.55 μm. © 2003 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Wi Nonlinear waveguides
78.66.Fd III-V semiconductors
42.79.Gn Optical waveguides and couplers

On the influence of hydrogen on the erbium-related luminescence in silicon

G. Kocher-Oberlehner, W. Jantsch, L. Palmetshofer, and A. Ulyashin

Appl. Phys. Lett. 83, 623 (2003); http://dx.doi.org/10.1063/1.1596380 (3 pages) | Cited 7 times

Online Publication Date: 22 July 2003

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Erbium- and oxygen-doped silicon was additionally doped with hydrogen, using plasma-enhanced chemical vapor deposition. Samples treated with solid-phase epitaxy (SPE) before hydrogenation and annealing at 900 °C afterwards show a large enhancement of the photoluminescence (PL) yield. A change in local concentration leads to a dominance of the cubic center in the PL. Controlled etching shows that the PL stems from a deeper region with lower erbium concentration. The luminescence yield in the hydrogenated samples is significantly higher, even compared to samples optimized for cubic center luminescence. We thus conclude that hydrogen enhances the solubility of the cubic center in Si:Er,O. © 2003 American Institute of Physics.  
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78.55.Ap Elemental semiconductors
71.55.Cn Elemental semiconductors
61.72.Cc Kinetics of defect formation and annealing
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On the extraction of positive and negative ions from electron-beam-generated plasmas

S. G. Walton, D. Leonhardt, R. F. Fernsler, and R. A. Meger

Appl. Phys. Lett. 83, 626 (2003); http://dx.doi.org/10.1063/1.1595155 (3 pages) | Cited 8 times

Online Publication Date: 22 July 2003

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The results of investigations using pulsed, electron-beam-produced plasmas in Ar/SF6 mixtures are reported. Positive and negative ions were extracted during the active phase of plasma production using a low-frequency, low-voltage bias applied to the sampling electrode. Time-averaged energy distributions, accumulated over several extraction periods, were employed to investigate the flux of both the positive and negative ions. The extraction of negative ions in large quantities suggests the formation of ion–ion plasmas, and the time-averaged energy distributions are in agreement with estimates of sheath formation at the biased electrode. © 2003 American Institute of Physics.
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52.50.Gj Plasma heating by particle beams
52.40.Kh Plasma sheaths
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Raman spectroscopy of GaN nucleation and free-standing layers grown by hydride vapor phase epitaxy on oxidized silicon

E. V. Konenkova, Yu. V. Zhilyaev, V. A. Fedirko, and D. R. T. Zahn

Appl. Phys. Lett. 83, 629 (2003); http://dx.doi.org/10.1063/1.1592623 (3 pages) | Cited 1 time

Online Publication Date: 22 July 2003

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GaN nucleation layers (NL-GaN) and GaN free-standing (FS-GaN) layers are studied using Raman spectroscopy and atomic force microscopy. The layers are deposited onto oxidized silicon substrates by hydride vapor phase epitaxy at 520 °C (NL layers) and 970 °C (FS layers). The effect of high-temperature annealing (1010 °C) on the properties of FS-GaN layers is investigated. The average height of the islands in the NL-GaN layers is found to increase from 15 to 400 nm when the growth time is increased from 10 to 200 min. The average growth rate of NLs is found to be very low, namely, ≈ 1×10−2 nm/s. E2 (566 cm−1) and A1 (longitudinal optical) (730 cm−1) peaks are observed on NL-GaN layers when the average size of the islands increases to 400 nm, scattering by E2 (567.3 cm−1) and E1 [transverse optical (TO)] (558.3 cm−1) modes is detected on FS-GaN layers. High-temperature annealing of the FS-GaN layers results in an increase of the intensity of E2 and E1(TO) peaks detected from the front side whereas no effect is observed for detection from the side exposed by removal of the substrate. © 2003 American Institute of Physics.
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78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
68.55.A- Nucleation and growth
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.05.Ea III-V semiconductors
68.37.Ps Atomic force microscopy (AFM)
61.72.Cc Kinetics of defect formation and annealing

Deformation mechanism in nanocrystalline Al: Partial dislocation slip

X. Z. Liao, F. Zhou, E. J. Lavernia, S. G. Srinivasan, M. I. Baskes, D. W. He, and Y. T. Zhu

Appl. Phys. Lett. 83, 632 (2003); http://dx.doi.org/10.1063/1.1594836 (3 pages) | Cited 148 times

Online Publication Date: 22 July 2003

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We report experimental observation of a deformation mechanism in nanocrystalline face-centered-cubic Al, partial dislocation emission from grain boundaries, which consequently resulted in deformation stacking faults (SFs) and twinning. These results are surprising because (1) partial dislocation emission from grain boundaries has not been experimentally observed although it has been predicted by simulations and (2) deformation stacking faults and twinning have not been reported in Al due to its high SF energy. © 2003 American Institute of Physics.
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62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
61.72.Mm Grain and twin boundaries
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
61.46.-w Structure of nanoscale materials
61.72.Nn Stacking faults and other planar or extended defects

Thermodynamic argument about SnO2 nanoribbon growth

A. Beltrán, J. Andrés, E. Longo, and E. R. Leite

Appl. Phys. Lett. 83, 635 (2003); http://dx.doi.org/10.1063/1.1594837 (3 pages) | Cited 46 times

Online Publication Date: 22 July 2003

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Calculations based on density functional theory at Becke’s three-parameter exchange functional combined with the Lee–Yang–Parr correlation functional (B3LYP) level and periodic slab models have been done to obtain: (i) the surface energy per unit area of different stoichiometric SnO2 surfaces, and (ii) by using a simple Wulff construction equation-type, the thermodynamic stability associated to the formation of nanoribbons from these surfaces has been obtained. In agreement with previous theoretical studies, the (110) face is the thermodynamically most stable surface. The present theoretical results and high-resolution transmission electron microscopy data reveal that the nanoribbons preferentially grow along the [101] crystal direction. © 2003 American Institute of Physics.
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68.35.Md Surface thermodynamics, surface energies
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
68.35.Dv Composition, segregation; defects and impurities
61.66.Bi Elemental solids
61.66.Dk Alloys
68.37.Lp Transmission electron microscopy (TEM)

Transmission electron microscopy observation of high-temperature γ-FeSi2 precipitates formed in Si by iron implantation using a metal vapor vacuum arc ion source

Y. Gao, S. P. Wong, W. Y. Cheung, G. Shao, and K. P. Homewood

Appl. Phys. Lett. 83, 638 (2003); http://dx.doi.org/10.1063/1.1594832 (3 pages) | Cited 8 times

Online Publication Date: 22 July 2003

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This work reports the observation of high-temperature γ-FeSi2 precipitates of tens of nanometers in diameter embedded in silicon formed by iron implantation using a metal vapor vacuum arc ion source followed by a dual step annealing process. It was found that the implantation temperature and annealing conditions played important roles on the shape and phase formation of the FeSi2 precipitates. When the implantation temperature was high (about 380 °C), only β-FeSi2 precipitates were formed. When the implantation temperature was low (about −100 °C), after the dual step annealing, in addition to β-FeSi2, γ-FeSi2 precipitates coherent with the silicon substrate were formed. © 2003 American Institute of Physics.
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81.30.Mh Solid-phase precipitation
81.05.Cy Elemental semiconductors
52.77.Dq Plasma-based ion implantation and deposition
61.72.uf Ge and Si
64.75.-g Phase equilibria
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments

Sputter deposited GaN doped erbium thin films: Photoluminescence and 1550 nm infrared electroluminescence

Joo Han Kim, Nigel Shepherd, Mark Davidson, and Paul H. Holloway

Appl. Phys. Lett. 83, 641 (2003); http://dx.doi.org/10.1063/1.1595731 (3 pages) | Cited 13 times

Online Publication Date: 22 July 2003

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Erbium doped gallium nitride (GaN) thin films were deposited on Si substrates by reactive rf magnetron cosputtering of a commercial GaN target, together with a metallic erbium target. Nitrogen was employed as the reactive sputtering gas. The gallium nitride doped erbium (GaN:Er) films thus obtained, exhibited the characteristic 525, 540, 660, and 1550 nm photoluminescence emission associated with the Er+3 ion 4f–4f intraband transitions. In addition, 1550 nm IR electroluminescence (EL) emission was observed from the sputter deposited GaN:Er phosphor films. The EL device was an inverted half-stack ac thin-film EL device structure. The 1550 nm EL emission is consistent with impact excitation and subsequent 4I13/2→4I15/2 radiative relaxation of Er+3 ions. Impact excitation requires conduction electrons with sufficient energy from electrical field acceleration, to excite the transition. © 2003 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
81.15.Cd Deposition by sputtering
85.60.Jb Light-emitting devices
81.05.Ea III-V semiconductors

Defect reduction in (11math0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

B. A. Haskell, F. Wu, M. D. Craven, S. Matsuda, P. T. Fini, T. Fujii, K. Fujito, S. P. DenBaars, J. S. Speck, and Shuji Nakamura

Appl. Phys. Lett. 83, 644 (2003); http://dx.doi.org/10.1063/1.1593817 (3 pages) | Cited 68 times

Online Publication Date: 22 July 2003

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This letter reports on the reduction in extended-defect densities in a-plane (11math0) GaN films achieved via lateral epitaxial overgrowth (LEO) by hydride vapor phase-epitaxy. A variety of dielectric mask patterns was used to produce 8–125-μm-thick, fully coalesced nonpolar GaN films. The nanometer-scale pit densities in the overgrown regions were less than 3×106 cm−2 compared to ∼ 1010 cm−2 in the direct-growth a-plane GaN. Cathodoluminescence revealed a fourfold increase in luminous intensity in the overgrown material compared to the window material. X-ray rocking curves indicate the films were free of wing tilt within the sensitivity of the measurements. Whereas non-LEO a-plane GaN exhibits basal plane stacking fault and threading dislocation densities of 105 cm−1 and 109 cm−2, respectively, the overgrown LEO material was essentially free of extended defects. The basal plane stacking fault and threading dislocation densities in the wing regions were below the detection limits of ∼ 5×106 cm−2 and 3×103 cm−1, respectively. © 2003 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Nn Stacking faults and other planar or extended defects
78.60.Hk Cathodoluminescence, ionoluminescence

Green electroluminescence of EuGa2S4 thin films

Katsu Tanaka and Shinji Okamoto

Appl. Phys. Lett. 83, 647 (2003); http://dx.doi.org/10.1063/1.1595715 (3 pages) | Cited 2 times

Online Publication Date: 22 July 2003

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Green electroluminescence (EL) was observed in europium thiogallate (EuGa2S4) thin films, which is a stoichiometric phosphor material. The peak wavelength of the EL spectrum measured at 300 K was 536 nm. The spectrum’s color coordinates were (0.29,0.67), which is the pure green region. Simulated EL spectra at 77 and 300 K indicated that the green EL originates not from the host band transition but from an intra-atomic transition of the Eu2+ ion. From the transient EL wave form, the EL was observed at the leading edge of a rectangular applied voltage. This suggests that the Eu2+ centers are directly excited by the impact of hot carriers. © 2003 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Li Other semiconductors
71.70.Ch Crystal and ligand fields

Intense visible light emission from stress-activated SrMgAl6O11:Eu

Morito Akiyama, Keiko Nishikubo, and Kazuhiro Nonaka

Appl. Phys. Lett. 83, 650 (2003); http://dx.doi.org/10.1063/1.1594828 (3 pages) | Cited 9 times

Online Publication Date: 22 July 2003

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We have investigated deformation luminescence phenomena and the constituent phases of SrMgAl6O11:Eu. The deformation luminescence is clearly visible to the naked eye in air, and the luminescence intensity is the highest among the materials reported. Using x-ray diffraction the constituent phases of SrMgAl6O11:Eu are determined to be SrAl2O4, SrMgAl10O17, and MgAl2O4. The deformation luminescence center has been identified as the Eu2+ ion from the deformation and photoluminescence studies of the three-phase composite. The thermoluminescence glow curve of the composite indicates the trapping levels around room temperature. This result means that the three-phase structure of the composite influences the high deformation luminescence intensity. © 2003 American Institute of Physics.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.55.Hx Other solid inorganic materials
78.60.Kn Thermoluminescence
81.30.Dz Phase diagrams of other materials
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Structural and optical characterization of nonpolar GaN/AlN quantum wells

H. M. Ng, A. Bell, F. A. Ponce, and S. N. G. Chu

Appl. Phys. Lett. 83, 653 (2003); http://dx.doi.org/10.1063/1.1595154 (3 pages) | Cited 17 times

Online Publication Date: 22 July 2003

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We have grown nonpolar GaN/AlN multiple quantum wells by plasma-assisted molecular-beam epitaxy on R-plane sapphire substrates. X-ray diffraction and selected-area diffraction data show that the III-nitride epilayers are oriented in the [11 math0] direction with the [0001] axis lying in the plane of the substrate. The 18-Å GaN quantum wells exhibit luminescence at 326 nm, which is in agreement with the transition energy calculated using a flat-band model; that is, without the presence of a built-in electric field. © 2003 American Institute of Physics.
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68.65.Fg Quantum wells
78.55.Cr III-V semiconductors
78.67.De Quantum wells
81.07.St Quantum wells

An irrecoverable change in the refractive index of plasma self-channeled silica fibers caused by femtosecond optical pulses

I.-W. Park, H. Ju, A. Avilov, S. H. Choh, E. K. Koh, S. H. Cho, H. Kumagai, and K. Midorikawa

Appl. Phys. Lett. 83, 656 (2003); http://dx.doi.org/10.1063/1.1593835 (3 pages)

Online Publication Date: 22 July 2003

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We have investigated the physical properties of modified optical fibers through which 110 fs Ti:sapphire laser beam is self-focused down to 5 μm at 790 and 395 nm. The optically modified region in the fiber core exhibits the refractive index greater than that in the undamaged region. Electron diffraction measurements for the damaged region reveal that the enhancement of index from 1.457 to 1.480 is induced by the crystallization of amorphous SiO2 into a cristobalite structure. During the optical damaging, silicon and oxygen plasma preferably recombine to result in new bonds responsible for the crystallization. Some of the remnant silicon plasma lead to defects of the well-known E′-center, whose density increased parabolically with the input light intensity. © 2003 American Institute of Physics.
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42.81.Dp Propagation, scattering, and losses; solitons
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
52.38.Hb Self-focussing, channeling, and filamentation in plasmas
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.43.Fs Glasses
76.30.Mi Color centers and other defects
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Effect of BN coatings on oxidation resistance and field emission of SiC nanowires

Chengchun Tang and Yoshio Bando

Appl. Phys. Lett. 83, 659 (2003); http://dx.doi.org/10.1063/1.1595721 (3 pages) | Cited 49 times

Online Publication Date: 22 July 2003

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We compare the effects of BN coatings on antioxidation ability and field emission properties of SiC nanowires. Under oxidizing condition, SiC nanowires without BN coatings are cracked into nanoparticles or almost fully converted into SiO2 nanowires at the temperature above 800 K, depending on the crystallization degree of SiC nanowires. The BN coatings effectively improve the antioxidation ability of SiC nanowires due to the excellent chemical stability of BN at high temperature. At a temperature higher than 1273 K, the coated SiC nanowires still exhibit strong oxidation resistance. For the effect on electron emission, the BN coatings also reduce the turn-on field of SiC nanowires from larger than 10 V/μm to lower than 6 V/μm. The explanation for the improvement of field emission characteristics has been presented. © 2003 American Institute of Physics.
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81.65.Mq Oxidation
79.70.+q Field emission, ionization, evaporation, and desorption
61.46.-w Structure of nanoscale materials
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems

Atomic resolution composition analysis by scanning transmission electron microscopy high-angle annular dark-field imaging

E. Carlino, S. Modesti, D. Furlanetto, M. Piccin, S. Rubini, and A. Franciosi

Appl. Phys. Lett. 83, 662 (2003); http://dx.doi.org/10.1063/1.1592314 (3 pages) | Cited 13 times

Online Publication Date: 22 July 2003

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The silicon concentration profile in Si–GaAs (001) superlattices grown by molecular beam epitaxy was investigated using scanning transmission electron microscopy high-angle annular dark-field (HAADF) imaging. Comparison with atomic resolution results obtained through cross-sectional scanning tunneling microscopy indicates that, by choosing appropriate experimental conditions, HAADF imaging can be used to gauge the Si distribution in GaAs on the atomic scale even without any image simulation. © 2003 American Institute of Physics.
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68.65.Cd Superlattices
68.35.Ct Interface structure and roughness

Formation of BiOi, BiCs, and BiBsHi defects in e-irradiated or ion-implanted silicon containing boron

J. Adey, R. Jones, and P. R. Briddon

Appl. Phys. Lett. 83, 665 (2003); http://dx.doi.org/10.1063/1.1595728 (3 pages) | Cited 13 times

Online Publication Date: 22 July 2003

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The local density functional theory is used to study the electrical levels and thermal stabilities of complexes of interstitial boron with O and C and a boron dimer with H. The energy levels of these defects are compared with those found from deep level transient capacitance spectroscopy experiments on irradiated p-Si containing B. The levels observed at Ec−0.23, Ev+0.29, and Ev+0.51 eV are assigned to BiOi, BiCs, and BiBsHi respectively. BiCs is passivated by one H atom. Evidence for the existence of BiCs has implications for mechanisms involved in the suppression of transient-enhanced diffusion of boron in ion-implanted Si by C. © 2003 American Institute of Physics.
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61.72.uf Ge and Si
61.80.Fe Electron and positron radiation effects
71.55.Cn Elemental semiconductors
66.30.J- Diffusion of impurities
61.72.J- Point defects and defect clusters
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
61.72.Yx Interaction between different crystal defects; gettering effect
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