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28 Jul 2003

Volume 83, Issue 4, pp. 593-811

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 611 (2003); http://dx.doi.org/10.1063/1.1595724 (3 pages)

Chung-Chih Wu, Chieh-Wei Chen, and Ting-Yi Cho
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Mechanical stress effect on imprint behavior of integrated ferroelectric capacitors

A. Gruverman, B. J. Rodriguez, A. I. Kingon, R. J. Nemanich, A. K. Tagantsev, J. S. Cross, and M. Tsukada

Appl. Phys. Lett. 83, 728 (2003); http://dx.doi.org/10.1063/1.1593830 (3 pages) | Cited 73 times

Online Publication Date: 22 July 2003

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Stress-induced changes in the imprint and switching behavior of (111)-oriented Pb(Zr,Ti)O3 (PZT)-based capacitors have been studied using piezoresponse force microscopy. Visualization of polarization distribution and d33-loop measurements in individual 1×1.5-μm2 capacitors before and after stress application, generated by substrate bending, provided direct experimental evidence of stress-induced switching. Mechanical stress caused elastic switching in capacitors with the direction of the resulting polarization determined by the sign of the applied stress. In addition, stress application turned capacitors into a heavily imprinted state characterized by strongly shifted hysteresis loops and almost complete backswitching after application of the poling voltage. It is suggested that substrate bending generated a strain gradient in the PZT layer, which produced asymmetric lattice distortion with preferential polarization direction and triggered polarization switching due to the flexoelectric effect. © 2003 American Institute of Physics.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.80.Fm Switching phenomena
77.65.Ly Strain-induced piezoelectric fields
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
84.32.Tt Capacitors
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
77.55.-g Dielectric thin films

Electric-field-induced dielectric anomalies in C-oriented 0.955Pb(Zn1/3Nb2/3)O3–0.045PbTiO3 single crystals

Mingrong Shen, Jiaping Han, and Wenwu Cao

Appl. Phys. Lett. 83, 731 (2003); http://dx.doi.org/10.1063/1.1595730 (3 pages) | Cited 10 times

Online Publication Date: 22 July 2003

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Electrical-field-induced dielectric anomalies in C-oriented 0.955Pb(Zn1/3Nb2/3)O3–0.045PbTiO3 single crystals were observed in both the dielectric constant and loss variations with temperature. Three distinct ordered phases are revealed, which are distinguished by their frequency dispersion behavior. We propose the existence of a medium-range ordered phase between the long-range and the short-range ordered phases, resulting from the competing features of the relaxor and ferroelectric constituents, Pb(Zn1/3Nb2/3)O3 and PbTiO3. Some dispersion is evident in this medium-range ordered phase but global polarization is still present. The assumption is rationalized by the measured relationship between the remnant polarization and temperature. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
77.22.Ej Polarization and depolarization
77.80.B- Phase transitions and Curie point
77.22.Ch Permittivity (dielectric function)

High-resolution domain imaging on the nonpolar y-face of periodically poled KTiOPO4 by means of atomic force microscopy

C. Canalias, V. Pasiskevicius, A. Fragemann, and F. Laurell

Appl. Phys. Lett. 83, 734 (2003); http://dx.doi.org/10.1063/1.1593834 (3 pages) | Cited 11 times

Online Publication Date: 22 July 2003

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The inverse piezoelectric effect is used to produce high-resolution images of ferroelectric domains in periodically poled KTiOPO4 crystals on their nonpolar y-face using atomic force microscopy. We demonstrate that the technique is convenient for studying the nucleation and growth of domains in a periodically poled KTiOPO4 sample. © 2003 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.37.Ps Atomic force microscopy (AFM)
42.70.Mp Nonlinear optical crystals
77.22.Ej Polarization and depolarization
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Ionic transport in polycrystalline zirconia and Frenkel’s space-charge layer postulation

Jean-Claude M’Peko and Milton Ferreira de Souza

Appl. Phys. Lett. 83, 737 (2003); http://dx.doi.org/10.1063/1.1595729 (3 pages) | Cited 7 times

Online Publication Date: 22 July 2003

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Various physical and chemical techniques have been applied elsewhere to get insight into the peculiarities of conduction processes in zirconia-based ionic conductors. Although Frenkel’s space-charge model is popularly accepted to describe well the capability of grain boundaries for limiting ion transport throughout these materials, validating this model has generally resulted to be a difficult task provided substantial restrictions to access the subgrain nanometer-sized regions involved. The present work reports a simple but consistent method to also approach this important question, and consists of studying the bulk and grain-boundary electrical responses of these materials while they are subjected to external mechanical loads. © 2003 American Institute of Physics.
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66.30.H- Self-diffusion and ionic conduction in nonmetals
61.72.Mm Grain and twin boundaries
77.22.Jp Dielectric breakdown and space-charge effects

Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon

Martin M. Frank, Yves J. Chabal, Martin L. Green, Annelies Delabie, Bert Brijs, Glen D. Wilk, Mun-Yee Ho, Elisa B. O. da Rosa, Israel J. R. Baumvol, and Fernanda C. Stedile

Appl. Phys. Lett. 83, 740 (2003); http://dx.doi.org/10.1063/1.1595719 (3 pages) | Cited 34 times

Online Publication Date: 22 July 2003

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A route is presented for activation of hydrogen-terminated Si(100) prior to atomic layer deposition. It is based on our discovery from in situ infrared spectroscopy that organometallic precursors can effectively initiate oxide growth. Narrow nuclear resonance profiling and Rutherford backscattering spectrometry show that surface functionalization by pre-exposure to 108 Langmuir trimethylaluminum at 300 °C leads to enhanced nucleation and to nearly linear growth kinetics of the high-permittivity gate dielectrics aluminum oxide and hafnium oxide. © 2003 American Institute of Physics.
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68.55.A- Nucleation and growth
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.33.Ya Chemistry of MOCVD and other vapor deposition methods
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis

Photoluminescence of pyrochlore phase in SrBi2Ta2O9 thin films

Y. P. Wang, H. F. Ning, L. Zhou, J. K. Shen, and Z. G. Liu

Appl. Phys. Lett. 83, 743 (2003); http://dx.doi.org/10.1063/1.1597418 (3 pages)

Online Publication Date: 22 July 2003

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SrBi2Ta2O9 thin films were prepared by pulsed laser deposition at different substrate temperatures. Photoluminescence (PL) has been detected at room temperature from the pyrochlore phase in the SrBi2Ta2O9 film deposited at 850 °C. The PL shows five luminescence bands of 330, 365, 407, 490, and 600 nm. And the PL excitation shows six excitation bands of 278, 330, 365, 407, 490, and 600 nm. The one-to-one correspondence of PL and PL excitation spectra reveals a band-to-band excitation and a multienergy-gap structure in the pyrochlore phase in SrBi2Ta2O9 films. © 2003 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
78.55.Hx Other solid inorganic materials
78.66.Nk Insulators
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
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