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28 Jul 2003

Volume 83, Issue 4, pp. 593-811

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Appl. Phys. Lett. 83, 611 (2003); http://dx.doi.org/10.1063/1.1595724 (3 pages)

Chung-Chih Wu, Chieh-Wei Chen, and Ting-Yi Cho
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Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy

Premila Mohan, Fumito Nakajima, Masashi Akabori, Junichi Motohisa, and Takashi Fukui

Appl. Phys. Lett. 83, 689 (2003); http://dx.doi.org/10.1063/1.1593823 (3 pages) | Cited 11 times

Online Publication Date: 22 July 2003

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Artificial two-dimensional semiconductor Kagome lattice structures formed by quantum wires can show ferromagnetism when the flatband is half filled, even though it does not have any magnetic elements. Experimental realization of such a Kagome lattice structure is reported. The structure, with different pattern periods, was formed with GaAs quantum wires by selective area metalorganic vapor phase epitaxy on GaAs (111)B substrates. To overcome the lateral overgrowth and to improve the shape of smaller period pattern, flow rate modulation epitaxy was employed and a GaAs Kagome lattice structure with 1 μm period was effectively grown. © 2003 American Institute of Physics.
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81.07.Vb Quantum wires
68.65.La Quantum wires (patterned in quantum wells)
75.75.-c Magnetic properties of nanostructures
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
75.50.Dd Nonmetallic ferromagnetic materials
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Dynamical analysis of carrier concentration in inelastic resonant tunneling

K. S. Chan

Appl. Phys. Lett. 83, 692 (2003); http://dx.doi.org/10.1063/1.1594827 (3 pages) | Cited 1 time

Online Publication Date: 22 July 2003

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An analytic expression for the buildup process in inelastic resonant tunneling is obtained using a tight-binding Hamiltonian. The buildup process is described by the summation of a number of oscillation terms which are guided by an exponential buildup envelope. The relative importance of these terms depends on the incident energy and resonant lifetime. Interesting interference patterns can be obtained by varying these parameters. A nonexponential buildup process is found near the resonant peak, with a buildup rate faster than that of the exponential envelope. Electron–phonon interaction can extend this nonexponential behavior to a wider range of energy by opening up additional resonance channels. © 2003 American Institute of Physics.
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73.23.Hk Coulomb blockade; single-electron tunneling
73.40.Gk Tunneling
71.38.-k Polarons and electron-phonon interactions

Observation of the transition of coherent/sequential electron tunneling in a resonant tunneling regime of a GaAs/AlAs three-terminal quantum-well heterostructure

Gyungock Kim, Dong Wan Roh, and Seung Won Paek

Appl. Phys. Lett. 83, 695 (2003); http://dx.doi.org/10.1063/1.1595149 (3 pages) | Cited 5 times

Online Publication Date: 22 July 2003

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We observe the coherency of electron tunneling preserved up to the resonant peak voltage by measuring scattered electrons in a GaAlAs/GaAs three-terminal heterostructure. The abrupt increase of the scattered electron current, which onsets at the resonant peak voltage, indicates the breakdown of the coherency of electron tunneling. The experimental result indicates that the abrupt nature of the electron scattering in the resonant tunneling regime can be utilized in switching and logical devices. © 2003 American Institute of Physics.
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73.63.Hs Quantum wells
73.23.-b Electronic transport in mesoscopic systems
73.40.Gk Tunneling

Trap-dominated minority-carrier recombination in GaInNAs pn junctions

D. J. Friedman, J. F. Geisz, W. K. Metzger, and S. W. Johnston

Appl. Phys. Lett. 83, 698 (2003); http://dx.doi.org/10.1063/1.1596711 (3 pages) | Cited 3 times

Online Publication Date: 22 July 2003

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We use dark current–voltage measurements on GaInNAs pn junctions as a direct probe of the dominant recombination mechanism in this material. The dark current is dominated by recombination through traps. Using the classic theory of Sah, Noyce, and Shockley, we deduce trap energies and carrier capture lifetimes as a function of band gap Eg. The trap energy is found to be roughly constant at ∼0.4 eV below the conduction band or above the valence band as Eg decreases from ∼1.1 to 0.9 eV with increasing [N]. Concomitantly, the capture lifetimes decrease from 5 to 0.08 ns. This rapid decrease has important implications for performance of high-[N] minority-carrier devices. © 2003 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.25.+i Surface conductivity and carrier phenomena
73.20.At Surface states, band structure, electron density of states
73.50.Pz Photoconduction and photovoltaic effects

Negative differential resistance effects of trench-type InGaAs quantum-wire field-effect transistors with 50-nm gate-length

Kee-Youn Jang, Takeyoshi Sugaya, Cheol-Koo Hahn, Mutsuo Ogura, Kazuhiro Komori, Akito Shinoda, and Kenji Yonei

Appl. Phys. Lett. 83, 701 (2003); http://dx.doi.org/10.1063/1.1595150 (3 pages) | Cited 9 times

Online Publication Date: 22 July 2003

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The effects of negative differential resistance (NDR) have been clearly observed in 50-nm-gate InGaAs/InAlAs trench-type quantum-wire (QWR) field-effect transistors (FETs), which are fabricated by atomic hydrogen-assisted molecular-beam epitaxy. The NDR onset voltage is as low as 0.1 V, and the highest peak-to-valley current ratio is 6.2 at 40 K. The equilateral symmetry of the NDR effect in a QWR FET is also observed. The pronounced NDR effects in a trench-type QWR FET are advantageous for high-speed and low power-consumption devices. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.63.Nm Quantum wires
81.05.Ea III-V semiconductors

Electric-field-induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization

F. Klappenberger, K. F. Renk, R. Summer, L. Keldysh, B. Rieder, and W. Wegscheider

Appl. Phys. Lett. 83, 704 (2003); http://dx.doi.org/10.1063/1.1595712 (3 pages) | Cited 2 times

Online Publication Date: 22 July 2003

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We report on a reversible avalanche breakdown due to free-carrier multiplication caused by cross band gap impact ionization in a GaAs microcrystal. The n GaAs microcrystal (length 1 μm, diameter 1 μm) was embedded between n+ GaAs layers serving as electric contacts. We guided an electric pulse to the sample and determined, from the reflected and transmitted pulse, the I(V) characteristic. The breakdown was indicated by a sudden current rise and voltage drop and a hysteresis effect and, furthermore, by electron-hole recombination radiation. We reached the threshold field for ionization by making use of a high-field domain whose formation was based on the Gunn effect. The microcrystal could reproducibly be switched into the nonequilibrium avalanche state. Our analysis indicates that the effect provides a basis for the development of an ultrafast electric switch. © 2003 American Institute of Physics.
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72.20.Ht High-field and nonlinear effects
77.22.Jp Dielectric breakdown and space-charge effects
72.80.Ey III-V and II-VI semiconductors
72.60.+g Mixed conductivity and conductivity transitions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Ohmic hole injection in poly(9,9-dioctylfluorene) polymer light-emitting diodes

D. Poplavskyy, J. Nelson, and D. D. C. Bradley

Appl. Phys. Lett. 83, 707 (2003); http://dx.doi.org/10.1063/1.1596722 (3 pages) | Cited 64 times

Online Publication Date: 22 July 2003

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Here we report the observation of ohmic hole injection from a conducting polymer anode into poly(9,9-dioctylfluorene) in a polymer light-emitting diode structure. Although initially nonohmic, the contact can be made locally ohmic by electrically conditioning the device at voltages higher than the electroluminescence onset voltage. The ohmic nature of the contact in selected regions is confirmed by the appearance of dark injection space-charge-limited transient currents, which yield hole mobilities in good agreement with those measured by the time-of-flight method. The appearance of ohmic injection is discussed within a model that assumes the existence of electron traps near the anode interface. When the sample is conditioned electrons are injected from the cathode and are trapped near the anode inducing an interfacial dipole that reduces the barrier for hole injection. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices

Effect of magnetic field on random telegraph noise in the source current of p-channel metal–oxide–semiconductor field-effect transistors

Filipp A. Baron, Yaohui Zhang, Mingqiang Bao, Ruigang Li, Jinmin Li, and Kang L. Wang

Appl. Phys. Lett. 83, 710 (2003); http://dx.doi.org/10.1063/1.1596381 (3 pages)

Online Publication Date: 22 July 2003

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Drain leakage current in accumulated metal–oxide–semiconductor field-effect transistors (MOSFETs) is pumped out completely by the body, while the source current should be zero due to the barrier of the p/n junction between the source and the accumulated channel. In this letter, we observe a fraction of drain current flowing into the source terminal in accumulated p-channel MOSFETs at low temperature. Under a certain gate bias region, the random telegraph noise (RTN) with an amplitude of 30% is observed in the source current of the devices. The source-current RTN disappears completely when the measured temperature exceeds 4.2 K. The source-current RTN is strongly affected by applied magnetic field, which causes the large decrease of the average switching time of the source RTN. We believe that the random charging and discharging of single defects at the SiO2/Si interface of the gate–source overlap region may strongly disturb the band-to-band tunneling process, and thereby result in the source-current RTN. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
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