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28 Jul 2003

Volume 83, Issue 4, pp. 593-811

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Appl. Phys. Lett. 83, 611 (2003); http://dx.doi.org/10.1063/1.1595724 (3 pages)

Chung-Chih Wu, Chieh-Wei Chen, and Ting-Yi Cho
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Temperature dependence of field emission from cupric oxide nanobelt films

Jun Chen, S. Z. Deng, N. S. Xu, Weixin Zhang, Xiaogang Wen, and Shihe Yang

Appl. Phys. Lett. 83, 746 (2003); http://dx.doi.org/10.1063/1.1595156 (3 pages) | Cited 69 times

Online Publication Date: 22 July 2003

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Films of aligned cupric oxide nanobelts have been prepared in an aqueous solution at room temperature. Field-emission characteristics, including emission-current–applied-field plot and emission site distribution, have been studied using the transparent anode technique. In addition, the temperature dependence of the field-emission characteristics has been studied from room temperature to 750 K. The threshold field for obtaining a current density of 10 μA/cm2 is ∼11 MV/m. This decreases with increasing temperature, and at 700 K it is ∼6 MV/m. At a fixed field of 10 MV/m, about a three-orders-of-magnitude increase of the emission current level has been observed. The results show that the cupric oxide nanobelt is a promising candidate for cathode material in a thermoelectric conversion device based on field emission. © 2003 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.07.Bc Nanocrystalline materials
68.55.A- Nucleation and growth
61.46.-w Structure of nanoscale materials
73.61.Ng Insulators

Si nanocrystals obtained through polymer pyrolysis

Gian Domenico Sorarù, Stefano Modena, Paolo Bettotti, Gobind Das, Gino Mariotto, and Lorenzo Pavesi

Appl. Phys. Lett. 83, 749 (2003); http://dx.doi.org/10.1063/1.1587876 (3 pages) | Cited 13 times

Online Publication Date: 22 July 2003

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In this letter, we report the formation of bulk samples of silica-based glass containing Si nanocrystals (Si-ncs) by pyrolysis of a preceramic precursor. The starting precursor is a sol–gel-derived polysiloxane containing only Si–H groups which leads, after annealing in a controlled atmosphere in the range 1000–1200 °C, to the precipitation of Si-ncs. Characterization of the nanostructure was performed by x-ray diffraction and Raman scattering analyses. Room-temperature luminescence experiments show the interesting optical properties of the Si-ncs/SiO2 material. © 2003 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.16.Be Chemical synthesis methods
81.07.Bc Nanocrystalline materials
81.05.Pj Glass-based composites, vitroceramics
78.30.Am Elemental semiconductors and insulators
78.55.Ap Elemental semiconductors
81.05.Cy Elemental semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.05.Kf Glasses (including metallic glasses)
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments
64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation

Transport characteristics of InAs/GaAs quantum-dot infrared photodetectors

Shih-Yen Lin, Yao-Jen Tsai, and Si-Chen Lee

Appl. Phys. Lett. 83, 752 (2003); http://dx.doi.org/10.1063/1.1594285 (3 pages) | Cited 15 times

Online Publication Date: 22 July 2003

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A ten-stacked self-assembled InAs/GaAs quantum dot (QD) infrared photodetector is investigated. A wide detection window of 2–10 μm is observed with a peak responsivity of 187 mA/W at 7 μm under an applied voltage of 1.1 V. The observed negative differential conductance (NDC) of the photocurrent at low temperature is attributed to the formation of high-field domains and the resultant intervalley scattering in the GaAs barrier layer. The disappearance of the NDC and the increase of single-QD photoluminescence intensity with increasing temperature below 100 K are attributed to the thermally assisted electron redistribution with increasing temperature. © 2003 American Institute of Physics.
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73.63.Kv Quantum dots
81.07.Ta Quantum dots
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
72.80.Ey III-V and II-VI semiconductors
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
78.67.Hc Quantum dots
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
72.40.+w Photoconduction and photovoltaic effects

InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal

Rachel A. Oliver, G. Andrew D. Briggs, Menno J. Kappers, Colin J. Humphreys, Shazia Yasin, James H. Rice, Jonathon D Smith, and Robert A. Taylor

Appl. Phys. Lett. 83, 755 (2003); http://dx.doi.org/10.1063/1.1595716 (3 pages) | Cited 64 times

Online Publication Date: 22 July 2003

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We describe the growth of InGaN quantum dots (QDs) by metalorganic vapor phase epitaxy. A thin InGaN epilayer is grown on a GaN buffer layer and then annealed at the growth temperature in molecular nitrogen inducing quantum dot formation. Microphotoluminescence studies of these QDs reveal sharp peaks with typical linewidths of ∼ 700 μeV at 4.2 K, the linewidth being limited by the spectral resolution. Time-resolved photoluminescence suggests that the excitons in these structures have lifetimes in excess of 2 ns at 4.2 K. © 2003 American Institute of Physics.
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81.07.Ta Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
61.72.Cc Kinetics of defect formation and annealing
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Cr III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
78.67.Hc Quantum dots

Nanoscale surface modification of glass using a 1064 nm pulsed laser

Senthil Theppakuttai and Shaochen Chen

Appl. Phys. Lett. 83, 758 (2003); http://dx.doi.org/10.1063/1.1597425 (3 pages) | Cited 18 times

Online Publication Date: 22 July 2003

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We report a method to produce nanopatterns on borosilicate glass by a Nd:yttrium–aluminum–garnet laser (10 ns, 1064 nm), using silica nanospheres. Nonlinear absorption of the enhanced optical field between the spheres and glass sample is believed to be the primary reason for the creation of nanofeatures on the glass substrate. By shining the laser beam from the backside of the glass sample, the scattering effects are minimized and only the direct field enhancement due to the spheres is utilized for surface patterning. To confirm this, calculations based on the Mie scattering theory were performed, and the resulting intensity as a function of scattering angles are presented. The nanofeatures thus obtained by this method are 350 nm in diameter and the distance between them is around 640 nm, which is same as the size of spheres used. © 2003 American Institute of Physics.
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79.20.Ds Laser-beam impact phenomena
61.82.Ms Insulators
81.16.Rf Micro- and nanoscale pattern formation
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

Room-temperature ultraviolet-emitting In2O3 nanowires

Huaqiang Cao, Xianqing Qiu, Yu Liang, Qiming Zhu, and Meijuan Zhao

Appl. Phys. Lett. 83, 761 (2003); http://dx.doi.org/10.1063/1.1596372 (3 pages) | Cited 46 times

Online Publication Date: 22 July 2003

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Semiconductor In2O3 nanowires embedded in an alumina template were fabricated using template technology. Scanning electron microscopy and transmission electron microscopy observations show that the In2O3 nanowire single crystal has an average diameter around 80 nm and a length over 10 μm. A strong photoluminescence (PL) emission with a peak at 398 nm (3.12 eV in photon energy) was detected upon excitation of the In2O3 nanowires at 274 nm (4.53 eV in photon energy) and 305 nm (4.08 eV in photon energy) under room temperature. The observed UV PL emission is attributed to the near band edge emission. © 2003 American Institute of Physics.
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78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
78.55.Hx Other solid inorganic materials

Impact of ultraviolet-laser heating on the photoluminescence of ensembles of GaN microcrystallites

Leah Bergman, Xiang-Bai Chen, Joel Feldmeier, and Andrew P. Purdy

Appl. Phys. Lett. 83, 764 (2003); http://dx.doi.org/10.1063/1.1597752 (3 pages) | Cited 9 times

Online Publication Date: 22 July 2003

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We present optical analysis concerning the redshift of the photoluminescence (PL) of ensembles of GaN microcrystals. We found that the extent of the redshift depends on the laser power as well as on the size of the ensemble. For ensembles of ∼30 μm, the laser power in our experimental specification impacted the PL energy and caused a redshift of up to 120 meV. This phenomenon was not observed for a small ensemble of ∼1 μm or less. For the small ensemble, the PL redshift was negligible and depended weakly on the laser power; similar behavior was found in GaN thin film. The above findings were observed in the PL of GaN microcrystalline of wurtzite as well as the cubic structure. Our results point to a laser heating event occurring in the large ensemble; the emitted scattered light is confined among the microcrystallites thus causing heating. For a small ensemble, the light has a higher probability of diffusing outside the enclosure, and thus no laser heating occurs. © 2003 American Institute of Physics.
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78.55.Cr III-V semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors

Spherical micromirrors from templated self-assembly: Polarization rotation on the micron scale

S. Coyle, G. V. Prakash, J. J. Baumberg, M. Abdelsalem, and P. N. Bartlett

Appl. Phys. Lett. 83, 767 (2003); http://dx.doi.org/10.1063/1.1595723 (3 pages) | Cited 12 times

Online Publication Date: 22 July 2003

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We demonstrate a fabrication route to individual micron-scale metallic spherical mirrors. The mirrors are prepared by electrochemical growth through the interstitial voids of a self-assembled latex sphere template. Excellent spherical mirrors of Au and Pt are obtained with unusual polarization properties in which multiple reflections with distinct anisotropies are found due to geometric polarization rotation. Such micromirrors can form the basis of low-cost microcavity structures and microlasers. © 2003 American Institute of Physics.
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42.79.Bh Lenses, prisms and mirrors
42.25.Ja Polarization
81.15.Pq Electrodeposition, electroplating
82.45.Qr Electrodeposition and electrodissolution
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