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28 Jul 2003

Volume 83, Issue 4, pp. 593-811

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 611 (2003); http://dx.doi.org/10.1063/1.1595724 (3 pages)

Chung-Chih Wu, Chieh-Wei Chen, and Ting-Yi Cho
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Raman spectroscopy of GaN nucleation and free-standing layers grown by hydride vapor phase epitaxy on oxidized silicon

E. V. Konenkova, Yu. V. Zhilyaev, V. A. Fedirko, and D. R. T. Zahn

Appl. Phys. Lett. 83, 629 (2003); http://dx.doi.org/10.1063/1.1592623 (3 pages) | Cited 1 time

Online Publication Date: 22 July 2003

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GaN nucleation layers (NL-GaN) and GaN free-standing (FS-GaN) layers are studied using Raman spectroscopy and atomic force microscopy. The layers are deposited onto oxidized silicon substrates by hydride vapor phase epitaxy at 520 °C (NL layers) and 970 °C (FS layers). The effect of high-temperature annealing (1010 °C) on the properties of FS-GaN layers is investigated. The average height of the islands in the NL-GaN layers is found to increase from 15 to 400 nm when the growth time is increased from 10 to 200 min. The average growth rate of NLs is found to be very low, namely, ≈ 1×10−2 nm/s. E2 (566 cm−1) and A1 (longitudinal optical) (730 cm−1) peaks are observed on NL-GaN layers when the average size of the islands increases to 400 nm, scattering by E2 (567.3 cm−1) and E1 [transverse optical (TO)] (558.3 cm−1) modes is detected on FS-GaN layers. High-temperature annealing of the FS-GaN layers results in an increase of the intensity of E2 and E1(TO) peaks detected from the front side whereas no effect is observed for detection from the side exposed by removal of the substrate. © 2003 American Institute of Physics.
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78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
68.55.A- Nucleation and growth
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.05.Ea III-V semiconductors
68.37.Ps Atomic force microscopy (AFM)
61.72.Cc Kinetics of defect formation and annealing

Deformation mechanism in nanocrystalline Al: Partial dislocation slip

X. Z. Liao, F. Zhou, E. J. Lavernia, S. G. Srinivasan, M. I. Baskes, D. W. He, and Y. T. Zhu

Appl. Phys. Lett. 83, 632 (2003); http://dx.doi.org/10.1063/1.1594836 (3 pages) | Cited 146 times

Online Publication Date: 22 July 2003

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We report experimental observation of a deformation mechanism in nanocrystalline face-centered-cubic Al, partial dislocation emission from grain boundaries, which consequently resulted in deformation stacking faults (SFs) and twinning. These results are surprising because (1) partial dislocation emission from grain boundaries has not been experimentally observed although it has been predicted by simulations and (2) deformation stacking faults and twinning have not been reported in Al due to its high SF energy. © 2003 American Institute of Physics.
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62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
61.72.Mm Grain and twin boundaries
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
61.46.-w Structure of nanoscale materials
61.72.Nn Stacking faults and other planar or extended defects

Thermodynamic argument about SnO2 nanoribbon growth

A. Beltrán, J. Andrés, E. Longo, and E. R. Leite

Appl. Phys. Lett. 83, 635 (2003); http://dx.doi.org/10.1063/1.1594837 (3 pages) | Cited 46 times

Online Publication Date: 22 July 2003

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Calculations based on density functional theory at Becke’s three-parameter exchange functional combined with the Lee–Yang–Parr correlation functional (B3LYP) level and periodic slab models have been done to obtain: (i) the surface energy per unit area of different stoichiometric SnO2 surfaces, and (ii) by using a simple Wulff construction equation-type, the thermodynamic stability associated to the formation of nanoribbons from these surfaces has been obtained. In agreement with previous theoretical studies, the (110) face is the thermodynamically most stable surface. The present theoretical results and high-resolution transmission electron microscopy data reveal that the nanoribbons preferentially grow along the [101] crystal direction. © 2003 American Institute of Physics.
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68.35.Md Surface thermodynamics, surface energies
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
68.35.Dv Composition, segregation; defects and impurities
61.66.Bi Elemental solids
61.66.Dk Alloys
68.37.Lp Transmission electron microscopy (TEM)

Transmission electron microscopy observation of high-temperature γ-FeSi2 precipitates formed in Si by iron implantation using a metal vapor vacuum arc ion source

Y. Gao, S. P. Wong, W. Y. Cheung, G. Shao, and K. P. Homewood

Appl. Phys. Lett. 83, 638 (2003); http://dx.doi.org/10.1063/1.1594832 (3 pages) | Cited 8 times

Online Publication Date: 22 July 2003

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This work reports the observation of high-temperature γ-FeSi2 precipitates of tens of nanometers in diameter embedded in silicon formed by iron implantation using a metal vapor vacuum arc ion source followed by a dual step annealing process. It was found that the implantation temperature and annealing conditions played important roles on the shape and phase formation of the FeSi2 precipitates. When the implantation temperature was high (about 380 °C), only β-FeSi2 precipitates were formed. When the implantation temperature was low (about −100 °C), after the dual step annealing, in addition to β-FeSi2, γ-FeSi2 precipitates coherent with the silicon substrate were formed. © 2003 American Institute of Physics.
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81.30.Mh Solid-phase precipitation
81.05.Cy Elemental semiconductors
52.77.Dq Plasma-based ion implantation and deposition
61.72.uf Ge and Si
64.75.-g Phase equilibria
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments

Sputter deposited GaN doped erbium thin films: Photoluminescence and 1550 nm infrared electroluminescence

Joo Han Kim, Nigel Shepherd, Mark Davidson, and Paul H. Holloway

Appl. Phys. Lett. 83, 641 (2003); http://dx.doi.org/10.1063/1.1595731 (3 pages) | Cited 13 times

Online Publication Date: 22 July 2003

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Erbium doped gallium nitride (GaN) thin films were deposited on Si substrates by reactive rf magnetron cosputtering of a commercial GaN target, together with a metallic erbium target. Nitrogen was employed as the reactive sputtering gas. The gallium nitride doped erbium (GaN:Er) films thus obtained, exhibited the characteristic 525, 540, 660, and 1550 nm photoluminescence emission associated with the Er+3 ion 4f–4f intraband transitions. In addition, 1550 nm IR electroluminescence (EL) emission was observed from the sputter deposited GaN:Er phosphor films. The EL device was an inverted half-stack ac thin-film EL device structure. The 1550 nm EL emission is consistent with impact excitation and subsequent 4I13/2→4I15/2 radiative relaxation of Er+3 ions. Impact excitation requires conduction electrons with sufficient energy from electrical field acceleration, to excite the transition. © 2003 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
81.15.Cd Deposition by sputtering
85.60.Jb Light-emitting devices
81.05.Ea III-V semiconductors

Defect reduction in (11math0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

B. A. Haskell, F. Wu, M. D. Craven, S. Matsuda, P. T. Fini, T. Fujii, K. Fujito, S. P. DenBaars, J. S. Speck, and Shuji Nakamura

Appl. Phys. Lett. 83, 644 (2003); http://dx.doi.org/10.1063/1.1593817 (3 pages) | Cited 68 times

Online Publication Date: 22 July 2003

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This letter reports on the reduction in extended-defect densities in a-plane (11math0) GaN films achieved via lateral epitaxial overgrowth (LEO) by hydride vapor phase-epitaxy. A variety of dielectric mask patterns was used to produce 8–125-μm-thick, fully coalesced nonpolar GaN films. The nanometer-scale pit densities in the overgrown regions were less than 3×106 cm−2 compared to ∼ 1010 cm−2 in the direct-growth a-plane GaN. Cathodoluminescence revealed a fourfold increase in luminous intensity in the overgrown material compared to the window material. X-ray rocking curves indicate the films were free of wing tilt within the sensitivity of the measurements. Whereas non-LEO a-plane GaN exhibits basal plane stacking fault and threading dislocation densities of 105 cm−1 and 109 cm−2, respectively, the overgrown LEO material was essentially free of extended defects. The basal plane stacking fault and threading dislocation densities in the wing regions were below the detection limits of ∼ 5×106 cm−2 and 3×103 cm−1, respectively. © 2003 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Nn Stacking faults and other planar or extended defects
78.60.Hk Cathodoluminescence, ionoluminescence

Green electroluminescence of EuGa2S4 thin films

Katsu Tanaka and Shinji Okamoto

Appl. Phys. Lett. 83, 647 (2003); http://dx.doi.org/10.1063/1.1595715 (3 pages) | Cited 1 time

Online Publication Date: 22 July 2003

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Green electroluminescence (EL) was observed in europium thiogallate (EuGa2S4) thin films, which is a stoichiometric phosphor material. The peak wavelength of the EL spectrum measured at 300 K was 536 nm. The spectrum’s color coordinates were (0.29,0.67), which is the pure green region. Simulated EL spectra at 77 and 300 K indicated that the green EL originates not from the host band transition but from an intra-atomic transition of the Eu2+ ion. From the transient EL wave form, the EL was observed at the leading edge of a rectangular applied voltage. This suggests that the Eu2+ centers are directly excited by the impact of hot carriers. © 2003 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Li Other semiconductors
71.70.Ch Crystal and ligand fields

Intense visible light emission from stress-activated SrMgAl6O11:Eu

Morito Akiyama, Keiko Nishikubo, and Kazuhiro Nonaka

Appl. Phys. Lett. 83, 650 (2003); http://dx.doi.org/10.1063/1.1594828 (3 pages) | Cited 9 times

Online Publication Date: 22 July 2003

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We have investigated deformation luminescence phenomena and the constituent phases of SrMgAl6O11:Eu. The deformation luminescence is clearly visible to the naked eye in air, and the luminescence intensity is the highest among the materials reported. Using x-ray diffraction the constituent phases of SrMgAl6O11:Eu are determined to be SrAl2O4, SrMgAl10O17, and MgAl2O4. The deformation luminescence center has been identified as the Eu2+ ion from the deformation and photoluminescence studies of the three-phase composite. The thermoluminescence glow curve of the composite indicates the trapping levels around room temperature. This result means that the three-phase structure of the composite influences the high deformation luminescence intensity. © 2003 American Institute of Physics.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.55.Hx Other solid inorganic materials
78.60.Kn Thermoluminescence
81.30.Dz Phase diagrams of other materials
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Structural and optical characterization of nonpolar GaN/AlN quantum wells

H. M. Ng, A. Bell, F. A. Ponce, and S. N. G. Chu

Appl. Phys. Lett. 83, 653 (2003); http://dx.doi.org/10.1063/1.1595154 (3 pages) | Cited 17 times

Online Publication Date: 22 July 2003

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We have grown nonpolar GaN/AlN multiple quantum wells by plasma-assisted molecular-beam epitaxy on R-plane sapphire substrates. X-ray diffraction and selected-area diffraction data show that the III-nitride epilayers are oriented in the [11 math0] direction with the [0001] axis lying in the plane of the substrate. The 18-Å GaN quantum wells exhibit luminescence at 326 nm, which is in agreement with the transition energy calculated using a flat-band model; that is, without the presence of a built-in electric field. © 2003 American Institute of Physics.
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68.65.Fg Quantum wells
78.55.Cr III-V semiconductors
78.67.De Quantum wells
81.07.St Quantum wells

An irrecoverable change in the refractive index of plasma self-channeled silica fibers caused by femtosecond optical pulses

I.-W. Park, H. Ju, A. Avilov, S. H. Choh, E. K. Koh, S. H. Cho, H. Kumagai, and K. Midorikawa

Appl. Phys. Lett. 83, 656 (2003); http://dx.doi.org/10.1063/1.1593835 (3 pages)

Online Publication Date: 22 July 2003

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We have investigated the physical properties of modified optical fibers through which 110 fs Ti:sapphire laser beam is self-focused down to 5 μm at 790 and 395 nm. The optically modified region in the fiber core exhibits the refractive index greater than that in the undamaged region. Electron diffraction measurements for the damaged region reveal that the enhancement of index from 1.457 to 1.480 is induced by the crystallization of amorphous SiO2 into a cristobalite structure. During the optical damaging, silicon and oxygen plasma preferably recombine to result in new bonds responsible for the crystallization. Some of the remnant silicon plasma lead to defects of the well-known E′-center, whose density increased parabolically with the input light intensity. © 2003 American Institute of Physics.
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42.81.Dp Propagation, scattering, and losses; solitons
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
52.38.Hb Self-focussing, channeling, and filamentation in plasmas
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.43.Fs Glasses
76.30.Mi Color centers and other defects
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Effect of BN coatings on oxidation resistance and field emission of SiC nanowires

Chengchun Tang and Yoshio Bando

Appl. Phys. Lett. 83, 659 (2003); http://dx.doi.org/10.1063/1.1595721 (3 pages) | Cited 49 times

Online Publication Date: 22 July 2003

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We compare the effects of BN coatings on antioxidation ability and field emission properties of SiC nanowires. Under oxidizing condition, SiC nanowires without BN coatings are cracked into nanoparticles or almost fully converted into SiO2 nanowires at the temperature above 800 K, depending on the crystallization degree of SiC nanowires. The BN coatings effectively improve the antioxidation ability of SiC nanowires due to the excellent chemical stability of BN at high temperature. At a temperature higher than 1273 K, the coated SiC nanowires still exhibit strong oxidation resistance. For the effect on electron emission, the BN coatings also reduce the turn-on field of SiC nanowires from larger than 10 V/μm to lower than 6 V/μm. The explanation for the improvement of field emission characteristics has been presented. © 2003 American Institute of Physics.
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81.65.Mq Oxidation
79.70.+q Field emission, ionization, evaporation, and desorption
61.46.-w Structure of nanoscale materials
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems

Atomic resolution composition analysis by scanning transmission electron microscopy high-angle annular dark-field imaging

E. Carlino, S. Modesti, D. Furlanetto, M. Piccin, S. Rubini, and A. Franciosi

Appl. Phys. Lett. 83, 662 (2003); http://dx.doi.org/10.1063/1.1592314 (3 pages) | Cited 13 times

Online Publication Date: 22 July 2003

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The silicon concentration profile in Si–GaAs (001) superlattices grown by molecular beam epitaxy was investigated using scanning transmission electron microscopy high-angle annular dark-field (HAADF) imaging. Comparison with atomic resolution results obtained through cross-sectional scanning tunneling microscopy indicates that, by choosing appropriate experimental conditions, HAADF imaging can be used to gauge the Si distribution in GaAs on the atomic scale even without any image simulation. © 2003 American Institute of Physics.
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68.65.Cd Superlattices
68.35.Ct Interface structure and roughness

Formation of BiOi, BiCs, and BiBsHi defects in e-irradiated or ion-implanted silicon containing boron

J. Adey, R. Jones, and P. R. Briddon

Appl. Phys. Lett. 83, 665 (2003); http://dx.doi.org/10.1063/1.1595728 (3 pages) | Cited 13 times

Online Publication Date: 22 July 2003

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The local density functional theory is used to study the electrical levels and thermal stabilities of complexes of interstitial boron with O and C and a boron dimer with H. The energy levels of these defects are compared with those found from deep level transient capacitance spectroscopy experiments on irradiated p-Si containing B. The levels observed at Ec−0.23, Ev+0.29, and Ev+0.51 eV are assigned to BiOi, BiCs, and BiBsHi respectively. BiCs is passivated by one H atom. Evidence for the existence of BiCs has implications for mechanisms involved in the suppression of transient-enhanced diffusion of boron in ion-implanted Si by C. © 2003 American Institute of Physics.
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61.72.uf Ge and Si
61.80.Fe Electron and positron radiation effects
71.55.Cn Elemental semiconductors
66.30.J- Diffusion of impurities
61.72.J- Point defects and defect clusters
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
61.72.Yx Interaction between different crystal defects; gettering effect

High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN

J.-F. Carlin and M. Ilegems

Appl. Phys. Lett. 83, 668 (2003); http://dx.doi.org/10.1063/1.1596733 (3 pages) | Cited 94 times

Online Publication Date: 22 July 2003

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We report on the growth by metalorganic vapor phase epitaxy of high-quality Al1−xInxN layers and AlInN/GaN Bragg mirrors near lattice matched to GaN. Layers are grown on a GaN buffer layer with no cracks over full 2 in. sapphire wafers. The index contrast relative to GaN is around 7% for wavelengths ranging from 950 to 450 nm. We demonstrate the growth of a crack-free, 20 pairs Al0.84In0.16N/GaN distributed Bragg reflector centered at 515 nm with an over 90% reflectivity and a 35 nm stop band. The growth of high quality AlInN lattice matched to GaN may represent a breakthrough in GaN-based optoelectronics which is presently limited by the lack of a high-index-contrast and high-band gap lattice-matched material. © 2003 American Institute of Physics.
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42.79.Bh Lenses, prisms and mirrors
42.82.Gw Other integrated-optical elements and systems
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Gibb’s free energy for the crystallization of glass forming liquids

K. Mondal, U. K. Chatterjee, and B. S. Murty

Appl. Phys. Lett. 83, 671 (2003); http://dx.doi.org/10.1063/1.1595725 (3 pages) | Cited 12 times

Online Publication Date: 22 July 2003

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This letter gives an approximation for the Gibb’s free energy change for the crystallization of undercooled liquid (ΔG). The present ΔG expression is arrived at by the modification of existing models. Calculations based on the present expression have shown that the ΔG values obtained for seven glass forming alloys (Au81.4Si18.6, La50Al30Ni20, Mg65Cu25Y10, Mg50Ni30La20, Pd40Ni40P20, Zr65Cu17.5Ni10Al7.5, and Zr41.2Ti13.8Cu12.5Ni10Be22.5) compare well with the experimental ones in all the cases with a maximum deviation of 6% up to the glass transition temperature (Tg). The present expression is able to calculate the ΔG values accurately in a variety of glass forming alloys ranging from binary to quinary systems with a wide range of reduced glass transition temperature (Trg = Tg/Tm) of 0.45–0.75. © 2003 American Institute of Physics.
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64.70.D- Solid-liquid transitions
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition

Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films

P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, S. P. DenBaars, and J. S. Speck

Appl. Phys. Lett. 83, 674 (2003); http://dx.doi.org/10.1063/1.1595133 (3 pages) | Cited 34 times

Online Publication Date: 22 July 2003

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Evaluation of the structural properties of 200-nm-thick Si-doped Al0.49Ga0.51N films, grown on nominally relaxed 1-μm-thick Al0.62Ga0.38N buffer layers on sapphire, revealed that increased Si doping promoted the relaxation of the compressively strained layers. The degree of strain relaxation R of the Al0.49Ga0.51N films, as determined by x-ray diffraction (XRD), increased from R = 0.55 to R = 0.94 with an increase in disilane injection from 1.25 nmol/min to 8.57 nmol/min. Transmission electron microscopy analysis showed that the edge threading dislocations (TDs) in the Al0.49Ga0.51N layers were inclined, such that the redirected TD lines had a misfit dislocation component. The calculated strain relaxation due to the inclined TDs was in close agreement with the values determined from XRD. We propose that the TD line redirection was promoted by the Si-induced surface roughness. © 2003 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.uj III-V and II-VI semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire

D. G. Zhao, S. J. Xu, M. H. Xie, S. Y. Tong, and Hui Yang

Appl. Phys. Lett. 83, 677 (2003); http://dx.doi.org/10.1063/1.1592306 (3 pages) | Cited 102 times

Online Publication Date: 22 July 2003

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The stress states in unintentionally doped GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire, and their effects on optical properties of GaN films were investigated by means of room-temperature confocal micro-Raman scattering and photoluminescence techniques. Relatively large tensile stress exists in GaN epilayers grown on Si and 6H-SiC while a small compressive stress appears in the film grown on sapphire. The latter indicates effective strain relaxation in the GaN buffer layer inserted in the GaN/sapphire sample, while the 50-nm-thick AlN buffer adopted in the GaN/Si sample remains highly strained. The analysis shows that the thermal mismatch between the epilayers and the substrates plays a major role in determining the residual strain in the films. Finally, a linear coefficient of 21.1±3.2 meV/GPa characterizing the relationship between the luminescent bandgap and the biaxial stress of the GaN films is obtained. © 2003 American Institute of Physics.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
81.05.Ea III-V semiconductors
68.60.Bs Mechanical and acoustical properties
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Dissolution kinetics of boron-interstitial clusters in silicon

S. Mirabella, E. Bruno, F. Priolo, D. De Salvador, E. Napolitani, A. V. Drigo, and A. Carnera

Appl. Phys. Lett. 83, 680 (2003); http://dx.doi.org/10.1063/1.1594264 (3 pages) | Cited 38 times

Online Publication Date: 22 July 2003

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In this work, we have investigated the stoichiometry of boron-interstitial clusters (BICs) produced in a molecular-beam-epitaxy-grown B box by Si implantation and annealing, and their dissolution during further prolonged annealing cycles. Low-concentration B delta doping was used to quantitatively monitor the interstitial (I) flux. A stoichiometric ratio of about 1.2 between I and B was found for the BICs formed at 815 °C. The BIC dissolution kinetics was investigated by analyzing the concentration profiles at different times and temperatures (in the range 815–950 °C) with a simulation code able to deconvolve the processes of B diffusion and B release from clusters. We found that the main mechanism for cluster dissolution is the release of interstitial boron atoms, with a thermal activation energy of 3.2±0.4 eV. These data are discussed and compared with existing literature data. © 2003 American Institute of Physics.
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61.72.S- Impurities in crystals
85.40.Ry Impurity doping, diffusion and ion implantation technology
81.05.Cy Elemental semiconductors
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
64.75.-g Phase equilibria
61.72.Cc Kinetics of defect formation and annealing
66.30.J- Diffusion of impurities
61.66.Bi Elemental solids
61.66.Dk Alloys

Sensitivity of amorphous silicon-germanium solar cells to oxygen impurity atoms

G. Ganguly and D. E. Carlson

Appl. Phys. Lett. 83, 683 (2003); http://dx.doi.org/10.1063/1.1596376 (3 pages) | Cited 1 time

Online Publication Date: 22 July 2003

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The performance of thin-film solar cells based on amorphous silicon germanium alloys (a-SiGe:H) are shown to be relatively sensitive to the contamination level of oxygen and/or nitrogen impurity atoms. Both a-SiGe single-junction solar cells and amorphous silicon (a-Si:H)/a-SiGe:H tandem solar cells were fabricated using a calibrated leak during deposition of individual layers. After light soaking, the tandem cells with a-SiGe layers deposited with an air leak, and observed to incorporate ∼ 4 (2.3)×1019 cm−3 oxygen (nitrogen) atoms, have significantly (10%) lower performance. The efficiency of a-SiGe:H single junction cells fabricated with varying air leak rates are found to improve systematically by ∼ 20% as the incorporated oxygen (nitrogen) concentration decreased by a factor of ∼ 3 (23) down to 1.3 (0.1)×1019 cm−3. © 2003 American Institute of Physics.
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84.60.Jt Photoelectric conversion

Spatially resolved electron energy-loss spectroscopy of an interfacial structure at a Ti thin film Cu interconnect

Nobuyuki Ikarashi, Makoto Ueki, and Masayuki Hiroi

Appl. Phys. Lett. 83, 686 (2003); http://dx.doi.org/10.1063/1.1596725 (3 pages) | Cited 1 time

Online Publication Date: 22 July 2003

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We previously showed that a Ti layer insertion suppressed the stress-induced void formation in the Cu line under a via without increasing the electric resistance of the line [Ueki et al., Tech. Dig.-Int. Electron Devices Meet. 2002, 749 (2002)]. We describe here a detailed analysis of the interfacial structure between the Ti layer and the lower Cu line, and show that a very thin (about 10 nm) Cu–Ti alloy layer was formed at the interface. We thus infer that the Ti–Cu alloy formation played an important role in suppressing the voiding in the Cu line, while the electronic resistance should hardly be changed because the alloy layer was very thin. © 2003 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
68.35.Ct Interface structure and roughness
79.20.Uv Electron energy loss spectroscopy
68.49.Jk Electron scattering from surfaces
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