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4 Aug 2003

Volume 83, Issue 5, pp. 817-1056

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 611 (2003); http://dx.doi.org/10.1063/1.1595724 (3 pages)

Chung-Chih Wu, Chieh-Wei Chen, and Ting-Yi Cho
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High-power Er:Yb fiber laser with very high numerical aperture pump-cladding waveguide

G. Bouwmans, R. M. Percival, W. J. Wadsworth, J. C. Knight, and P. St. J. Russell

Appl. Phys. Lett. 83, 817 (2003); http://dx.doi.org/10.1063/1.1596378 (2 pages) | Cited 9 times

Online Publication Date: 30 July 2003

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One watt of laser power at 1535 nm has been generated from an Er:Yb codoped double-clad fiber structure, in which the inner cladding was suspended in air by a large number of thin silica webs. The acceptance numerical aperture (NA) of the inner cladding has been measured over a range of wavelengths, for lengths from 1 up to 100 m. For fiber lengths of ∼ 40 m, the NA at the pump diode wavelength was 0.88. © 2003 American Institute of Physics.
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42.55.Wd Fiber lasers
42.60.By Design of specific laser systems
42.81.Bm Fabrication, cladding, and splicing

Experimental investigation of single voxels for laser nanofabrication via two-photon photopolymerization

Hong-Bo Sun, Makoto Maeda, Kenji Takada, James W. M. Chon, Min Gu, and Satoshi Kawata

Appl. Phys. Lett. 83, 819 (2003); http://dx.doi.org/10.1063/1.1598293 (3 pages) | Cited 21 times

Online Publication Date: 30 July 2003

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We report critical roles that are played by laser system parameters in two-photon laser nanofabrication, which are not significant in rapid prototyping at larger scale, including: (i) polarization-induced lateral deshaping of volume elements, voxels, the primitive building block of micronanostructures, and (ii) lateral size reduction of voxels at low numerical aperture lens focusing due to thresholding effect. Also interesting is (iii) simultaneous recording of zeroth- and higher-order diffraction patterns, which was not hindered by the two-order light intensity difference by taking the advantage of the large dynamic exposure time range of general resins, a concept that is proposed in contrast to dynamic power range. © 2003 American Institute of Physics.
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42.62.-b Laser applications
81.16.Be Chemical synthesis methods
82.35.Np Nanoparticles in polymers
81.07.-b Nanoscale materials and structures: fabrication and characterization
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
82.50.Pt Multiphoton processes
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
61.41.+e Polymers, elastomers, and plastics

Demonstration of finite-aperture tapered unstable resonator lasers

Robert Bedford, Marc Schillgalies, and Mahmoud Fallahi

Appl. Phys. Lett. 83, 822 (2003); http://dx.doi.org/10.1063/1.1598292 (3 pages)

Online Publication Date: 30 July 2003

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In this letter, we report experimental results of semiconductor lasers that incorporate a mirror with finite lateral extent at the output of a semiconductor tapered laser in InAlGaAs/InGaAsP/InP. We directly compare the “finite-aperture” tapered unstable resonator laser to that of the conventional “infinite-aperture” tapered laser. Using the finite aperture, we show the differential quantum efficiency is increased by 40%. Additionally, the beam is coupled out of the laser cavity using a grating, allowing for a quasicircular, low-divergence beam with no external optics. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Fiber-coupled erbium microlasers on a chip

Lan Yang, D. K. Armani, and K. J. Vahala

Appl. Phys. Lett. 83, 825 (2003); http://dx.doi.org/10.1063/1.1598623 (2 pages) | Cited 33 times

Online Publication Date: 30 July 2003

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An erbium-doped, toroid-shaped microlaser fabricated on a silicon chip is described and characterized. Erbium-doped sol-gel films are applied to the surface of a silica toroidal microresonator to create the microcavity lasers. Highly confined whispering gallery modes make possible single-mode and ultralow threshold microlasers. © 2003 American Institute of Physics.
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42.55.Sa Microcavity and microdisk lasers
42.55.Wd Fiber lasers

Thermal bias operation in electro-optic polymer modulators

Suntak Park, Jung Jin Ju, Jung Yun Do, Seung Koo Park, and Myung-Hyun Lee

Appl. Phys. Lett. 83, 827 (2003); http://dx.doi.org/10.1063/1.1596377 (3 pages) | Cited 5 times

Online Publication Date: 30 July 2003

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An electro-optic polymer Mach–Zender modulator based on thermal biasing is proposed and demonstrated. The bias point of the modulator is controlled through the thermo-optic effect. Biasing is achieved by thermally changing the optical path length of one arm of the Mach–Zender interferometer. Tuning of bias points is realized by applying an electrical power of only 14 mW. It is verified that this approach is stable and substantially dc-drift free. © 2003 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
42.70.Jk Polymers and organics
07.60.Ly Interferometers

Low-threshold lasing of InGaN vertical-cavity surface-emitting lasers with dielectric distributed Bragg reflectors

Takehiko Tawara, Hideki Gotoh, Tetsuya Akasaka, Naoki Kobayashi, and Tadashi Saitoh

Appl. Phys. Lett. 83, 830 (2003); http://dx.doi.org/10.1063/1.1596728 (3 pages) | Cited 23 times

Online Publication Date: 30 July 2003

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Lasing action is achieved in InGaN vertical-cavity surface-emitting lasers (VCSELs) with dielectric distributed Bragg reflectors (DBRs). We fabricated III-nitride VCSELs by removing a SiC substrate from a III-nitride cavity with a dry etching technique and then wafer bonding the cavity and SiO2/ZrO2 DBRs. These VCSELs have a high quality factor of 460 and a spontaneous emission factor of 10−2. We observed lasing at a wavelength of 401 nm at room temperature with optical pumping. This lasing action was demonstrated at a low threshold of 5.1 mJ/cm2 by using a high-quality crystalline cavity and quantum-well layers without surface roughening or cracking. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Enhanced thermal stability of laser diodes with shape-engineered quantum dot medium

V. Tokranov, M. Yakimov, A. Katsnelson, M. Lamberti, and S. Oktyabrsky

Appl. Phys. Lett. 83, 833 (2003); http://dx.doi.org/10.1063/1.1598645 (3 pages) | Cited 15 times

Online Publication Date: 30 July 2003

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Optical properties of the quantum dots (QDs) were optimized by shape engineering through the adjustment of the thickness of the GaAs overlayer prior to an additional heating step leading to QD truncation. QDs with a 6-nm-thick overlayer with the subsequent heating step were found to have the highest photoluminescence intensity at room temperature and the lowest luminescence bandwidth, 29 meV. 1.22 μm edge-emitting laser with a triple-layer truncated QD gain medium demonstrated room temperature threshold current density, 56 A/cm2, and saturated modal gain, 16 cm−1. An extremely high characteristic temperature for lasing threshold, T0 = 380 K up to 55 °C, and a maximum ground state lasing temperature of 219 °C were measured for these laser diodes. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.55.Cr III-V semiconductors
68.65.Hb Quantum dots (patterned in quantum wells)
78.67.Hc Quantum dots

Surface plasmon resonance on microaperture vertical-cavity surface-emitting laser with metal grating

Satoshi Shinada, Jiro Hashizume, and Fumio Koyama

Appl. Phys. Lett. 83, 836 (2003); http://dx.doi.org/10.1063/1.1597979 (3 pages) | Cited 40 times

Online Publication Date: 30 July 2003

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We proposed a microaperture vertical-cavity surface-emitting laser (VCSEL) with metal grating for the enhancement of optical near-field induced by surface plasmon resonance. We carried out the two-dimensional modeling on the near-field intensity at a microaperture surrounded by a grating in a silver film. An increase in throughput through the microaperture was obtained by the control of a surface plasmon mode, which is strongly dependent on some structural parameters of the grating, such as the period and the depth of a grating, and so on. We also fabricated a microaperture VCSEL with concentric circular grating, exhibiting a large enhancement in peak intensity. The intensity is eight times larger than that of a single-aperture device without grating. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
42.79.Dj Gratings

Phase-coherent multicolor femtosecond pulse generation

Yohei Kobayashi, Hideyuki Takada, Masayuki Kakehata, and Kenji Torizuka

Appl. Phys. Lett. 83, 839 (2003); http://dx.doi.org/10.1063/1.1598651 (3 pages) | Cited 15 times

Online Publication Date: 30 July 2003

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We achieved phase-coherent multicolor femtosecond pulse generation by optical phase locking among the pump and its subharmonic signal and idler pulses in an optical parametric oscillator. The ability for coherent superposition of the multicolor pulses is demonstrated in a time-domain measurement. Clear interferometric fringes between two sum-frequency pulses, corresponding to phase stability among the subharmonics, were observed with phase locking. © 2003 American Institute of Physics.
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42.65.Yj Optical parametric oscillators and amplifiers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

Synthesis and characterization of composition-spread (Sr,Ca)2CuO3 thin films with high third-order optical nonlinearity

M. Ohtani, T. Fukumura, H. Sakurada, J. Nishimura, M. Kawasaki, T. Makino, K. Yamamoto, and Y. Segawa

Appl. Phys. Lett. 83, 842 (2003); http://dx.doi.org/10.1063/1.1597411 (3 pages) | Cited 1 time

Online Publication Date: 30 July 2003

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The optical properties of composition-spread (SrxCa1−x)2CuO3(0 ⩽ x ⩽ 1) films showing high third-order optical nonlinearity are systematically investigated. Desired orientations and high crystallinity are obtained for the entire composition x by employing a composition-spread [(Sr2TiO4)x(LaSrAlO4)1−x] buffer layer and a temperature-gradient method in order to compensate the change in lattice mismatch and growth temperature depending on x. Linear absorption spectra and third-harmonic intensity with an exciting wavelength of 1.56 μm are measured as a function of x. As the Cu–O bond length increases with x, the charge-transfer gap decreases and the third-harmonic intensity increases, and both the charge-transfer gap and third-harmonic intensity change almost linearly with x between Ca2CuO3 and Sr2CuO3. © 2003 American Institute of Physics.
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42.65.An Optical susceptibility, hyperpolarizability
78.66.Nk Insulators
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Frequency-doubled diode laser for ultraviolet absorption spectroscopy at 325 nm

Toni Laurila and Rolf Hernberg

Appl. Phys. Lett. 83, 845 (2003); http://dx.doi.org/10.1063/1.1598285 (3 pages) | Cited 4 times

Online Publication Date: 30 July 2003

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A frequency-doubled tunable diode laser for absorption spectroscopy in the ultraviolet is described. The device is based on an external cavity diode laser with a transmission grating. Second-harmonic generation at 320–327 nm is carried out using a lithium iodate crystal. The measured single-pass cw ultraviolet power is 60 nW and the system has a 40-GHz continuous mode-hop-free tuning range in the ultraviolet. The laser was demonstrated by measuring the 324.75-nm 42S1/2–42P3/2 transition of copper at atmospheric pressure with a single continuous scan. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
07.60.Rd Visible and ultraviolet spectrometers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Continuously tunable and coherent terahertz radiation by means of phase-matched difference-frequency generation in zinc germanium phosphide

Wei Shi and Yujie J. Ding

Appl. Phys. Lett. 83, 848 (2003); http://dx.doi.org/10.1063/1.1596730 (3 pages) | Cited 31 times

Online Publication Date: 30 July 2003

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Continuously tunable and coherent radiation has been obtained in the ranges of 66.5–300 μm and 72.7–237 μm for two configurations of phase-matched difference-frequency generation, respectively, in zinc germanium phosphide. The highest output peak powers are measured to be 36 and 19 W for the two configurations, respectively. © 2003 American Institute of Physics.
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07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources
42.70.Mp Nonlinear optical crystals
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Ultrafast nonlinear response of AlGaAs two-dimensional photonic crystal waveguides

A. D. Bristow, J.-P. R. Wells, W. H. Fan, A. M. Fox, M. S. Skolnick, D. M. Whittaker, A. Tahraoui, T. F. Krauss, and J. S. Roberts

Appl. Phys. Lett. 83, 851 (2003); http://dx.doi.org/10.1063/1.1598647 (3 pages) | Cited 44 times

Online Publication Date: 30 July 2003

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We have used femtosecond pump-probe spectroscopy to study the ultrafast nonlinear response of AlGaAs two-dimensional photonic crystal waveguides in the near-infrared spectral region. The modulation of the reflectivity spectra due to the refractive index change produced by photogenerated carriers was measured. We observed an instantaneous pump-induced shift in the wavelength of a photonic resonance at 882 nm with a fast decay time of ≈8 ps. The magnitude of the reflectivity change was very large at wavelengths close to the photonic resonance, with a maximum value of ΔR/R>30% at 877 nm. These results confirm the excellent potential of photonic crystal waveguides in ultrafast nonlinear switching applications. © 2003 American Institute of Physics.
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78.47.-p Spectroscopy of solid state dynamics
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.70.Qs Photonic bandgap materials
42.65.Wi Nonlinear waveguides
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Radio-frequency-driven near atmospheric pressure microplasma in a hollow slot electrode configuration

Zengqi Yu, Katsumi Hoshimiya, John D. Williams, Steven F. Polvinen, and George J. Collins

Appl. Phys. Lett. 83, 854 (2003); http://dx.doi.org/10.1063/1.1564640 (3 pages) | Cited 23 times

Online Publication Date: 30 July 2003

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We report hollow electrode geometries that support near atmospheric (89 kPa) microdischarges in Ar and Ar–air mixtures when excited at 13.56 MHz with rf voltages of 50–230 V. The slot dimensions are 200 μm wide by 400–600 μm deep and 3–35 cm in length. Optical emission along the slot length is uniform in intensity at applied rf power levels up to 10 W/cm of slot length under the experimental conditions described herein. When metal electrodes are employed, we can draw 0.18 A/cm of self-bias dc current into the rf-driven plasma. Measurements of the electrode self-bias dc voltage level indicate operation in both negative as well as positive self-bias discharge modes. The latter mode, to our knowledge, has not been reported previously in rf microdischarges at near atmospheric pressures. © 2003 American Institute of Physics.
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52.80.Pi High-frequency and RF discharges
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
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Photoluminescence in tensile-strained Si type-II quantum wells on bulk single-crystal SiGe substrates

S. R. Sheng, N. L. Rowell, and S. P. McAlister

Appl. Phys. Lett. 83, 857 (2003); http://dx.doi.org/10.1063/1.1597413 (3 pages) | Cited 4 times

Online Publication Date: 30 July 2003

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Near-band edge photoluminescence (PL) in high-quality tensile-strained Si type-II quantum wells (QWs) with varying well width grown on bulk crystal SiGe substrates by using ultrahigh vacuum chemical vapor deposition has been studied. In contrast to the blueshifts observed in the PL lines of Si1−xGex QWs on Si, the PL lines of Si QWs exhibit redshifts with increasing excitation density. The PL from the SiGe substrate shows no such shift. The excitation-induced PL redshifts decrease as the well width decreases, and are essentially independent of temperature up to 15 K. The rapid thermal annealing (RTA) was found to improve the crystal quality of the samples. RTA enhances the integrated PL intensity, results in narrowing and blueshifting of PL bands at a given excitation density, and reduces the exponent in the excitation power dependence as well as the amount of excitation-induced PL redshifting. Possible mechanisms for the observed excitation-induced PL redshifts were examined, including band bending, band filling, and binding of excitons to impurities. © 2003 American Institute of Physics.
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78.55.Ap Elemental semiconductors
61.72.Cc Kinetics of defect formation and annealing
78.67.De Quantum wells
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Atomic arrangement at the AlN/Si (111) interface

R. Liu, F. A. Ponce, A. Dadgar, and A. Krost

Appl. Phys. Lett. 83, 860 (2003); http://dx.doi.org/10.1063/1.1597749 (3 pages) | Cited 32 times

Online Publication Date: 30 July 2003

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High-quality GaN epilayers have been grown on Si (111) substrates by metalorganic vapor phase epitaxy using a low-temperature AlN nucleation layer. The atomic arrangement at the epilayer/substrate interface has been investigated by high-resolution electron microscopy. A crystallographically abrupt interface is observed along most of the epilayer, indicating that the AlN/Si interface is thermodynamically stable and of high crystalline quality. Lattice images at the interface show a periodic array of misfit dislocations. The lattice images have been analyzed in detail in order to obtain information about the atomic arrangement, and interface bonding models are proposed. © 2003 American Institute of Physics.
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68.35.Ct Interface structure and roughness
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase

A critical examination of the P–h2 relationship in nanoindentation

M. Troyon and M. Martin

Appl. Phys. Lett. 83, 863 (2003); http://dx.doi.org/10.1063/1.1596384 (3 pages) | Cited 8 times

Online Publication Date: 30 July 2003

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In this letter we derive a corrected analytical expression for the indentation load–depth relation during loading in an indentation experiment; P = Er(1/mathmath+ε(m)/γmathmath)−2(h+hb)2. This expression takes into account the correction factor γ in the fundamental relations among contact stiffness, elastic modulus, and contact area, which is frequently forgotten in the literature, and the exact value of the geometric constant ε(m) of the indenter. A comparison with previously used expressions shows a much better agreement between hardness measurements from loading and unloading curve analyses. © 2003 American Institute of Physics.
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68.35.Gy Mechanical properties; surface strains
62.20.D- Elasticity
62.20.Qp Friction, tribology, and hardness
81.40.Jj Elasticity and anelasticity, stress-strain relations

Investigation of radiative recombination from Mn-related states in Ga1−xMnxAs

F. J. Teran, L. X. Zhao, A. Patanè, R. P. Campion, C. T. Foxon, L. Eaves, and B. L. Gallagher

Appl. Phys. Lett. 83, 866 (2003); http://dx.doi.org/10.1063/1.1597750 (3 pages) | Cited 4 times

Online Publication Date: 30 July 2003

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We show that the incorporation of a Ga1−xMnxAs layer with x = 1% in the intrinsic region of a p–i–n diode produces an intense electroluminescence signal due to electronic transitions that involve holes bound to Mn-related states. The intensity of the electroluminescence signal is weakly affected by the temperature over the range of 5–290 K, thus indicating that the Mn-related hole states act as efficient sites for radiative recombination even at room temperature, despite the strong disorder in the Ga1−xMnxAs at relatively high values of x. © 2003 American Institute of Physics.
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78.60.Fi Electroluminescence
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.55.Eq III-V semiconductors
75.50.Pp Magnetic semiconductors
85.30.Kk Junction diodes

Comparison of Cu electromigration lifetime in Cu interconnects coated with various caps

C.-K. Hu, L. Gignac, E. Liniger, B. Herbst, D. L. Rath, S. T. Chen, S. Kaldor, A. Simon, and W.-T. Tseng

Appl. Phys. Lett. 83, 869 (2003); http://dx.doi.org/10.1063/1.1596375 (3 pages) | Cited 29 times

Online Publication Date: 30 July 2003

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Electromigration in Cu Damascene lines with bamboo-like grain structures, either capped with Ta/TaN, SiNx, SiCxNyHz layers, or without any cap, was investigated. A thin Ta/TaN cap on top of the Cu line surface significantly improves electromigration lifetime when compared with lines without a cap and with lines capped with SiNx or SiCxNyHz. The activation energy for electromigration increased from 0.87 eV for lines without a cap to 1.0–1.1 eV for samples with SiNx or SiCxNyHz caps and to 1.4 eV for Ta/TaN capped samples. © 2003 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
66.30.Qa Electromigration

Strain analysis of a quantum-wire system produced by cleaved edge overgrowth using grazing incidence x-ray diffraction

M. Sztucki, T. U. Schülli, T. H. Metzger, V. Chamard, R. Schuster, and D. Schuh

Appl. Phys. Lett. 83, 872 (2003); http://dx.doi.org/10.1063/1.1597962 (3 pages) | Cited 2 times

Online Publication Date: 30 July 2003

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A GaAs surface layer of 10 nm thickness was grown on the cleaved edge of an In0.1Al0.9As/Al0.33Ga0.67As multilayer in order to induce a lateral periodic strain modulation. We apply surface sensitive grazing incidence x-ray diffraction to distinguish between compositional/morphological and purely strain induced modulations. The experimentally determined strain profile is confirmed by finite-element model calculations. The GaAs layer is found to be purely strain modulated with an average lattice parameter change of (0.8±0.1)% with respect to relaxed GaAs. © 2003 American Institute of Physics.
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68.65.La Quantum wires (patterned in quantum wells)
81.07.Vb Quantum wires
61.05.cm X-ray reflectometry (surfaces, interfaces, films)

Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers

T. S. Drake, C. Ní Chléirigh, M. L. Lee, A. J. Pitera, E. A. Fitzgerald, D. A. Antoniadis, D. H. Anjum, J. Li, R. Hull, N. Klymko, and J. L. Hoyt

Appl. Phys. Lett. 83, 875 (2003); http://dx.doi.org/10.1063/1.1598649 (3 pages) | Cited 24 times

Online Publication Date: 30 July 2003

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The fabrication of ultrathin strained silicon directly on insulator is demonstrated and the thermal stability of these films is investigated. Ultrathin ( ∼ 13 nm) strained silicon on insulator layers were fabricated by epitaxial growth of strained silicon on relaxed SiGe, wafer bonding, and an etch-back technique employing two etch-stop layers for improved across wafer thickness uniformity. Using 325 nm Raman spectroscopy, no strain relaxation is observed following rapid thermal annealing of these layers to temperatures as high as 950 °C. The thermal stability of these films is promising for the future fabrication of enhanced performance strained Si ultrathin body and double-gate metal-oxide-semiconductor field-effect transistors. © 2003 American Institute of Physics.
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78.30.Hv Other nonmetallic inorganics
61.72.Cc Kinetics of defect formation and annealing
68.60.Bs Mechanical and acoustical properties
85.30.Tv Field effect devices

Mg acceptor level in AlN probed by deep ultraviolet photoluminescence

K. B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 83, 878 (2003); http://dx.doi.org/10.1063/1.1594833 (3 pages) | Cited 34 times

Online Publication Date: 30 July 2003

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Mg-doped AlN epilayers were grown by metalorganic chemical vapor deposition on sapphire substrates. Deep UV picosecond time-resolved photoluminescence (PL) spectroscopy has been employed to study the optical transitions in Mg-doped AlN epilayers. From PL emission spectra and the temperature dependence of the PL emission intensity, a binding energy of 0.51 eV for Mg acceptor in AlN was determined. Together with previous experimental results, the Mg acceptor activation energy in AlxGa1−xN as a function of the Al content (x) was extrapolated for the entire AlN composition range. The average hole effective mass in AlN was also deduced to be about 2.7 m0 from the experimental value of the Mg binding energy together with the use of the effective mass theory. © 2003 American Institute of Physics.
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71.55.Eq III-V semiconductors
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.47.-p Spectroscopy of solid state dynamics
72.20.Ee Mobility edges; hopping transport
72.20.Fr Low-field transport and mobility; piezoresistance
73.50.Dn Low-field transport and mobility; piezoresistance
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Photochromic effect in magnesium-doped α-Al2O3 single crystals

M. Tardío, R. Ramírez, R. González, Y. Chen, and M. R. Kokta

Appl. Phys. Lett. 83, 881 (2003); http://dx.doi.org/10.1063/1.1597963 (3 pages) | Cited 5 times

Online Publication Date: 30 July 2003

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A reversible photochromic effect was investigated in Mg-doped α-Al2O3 single crystals oxidized at elevated temperatures. Alternate illumination with blue and UV light at T ⩽ 210 K results in reversible disappearance and reappearance of a gray-purple coloration, respectively. The coloration can also be fully rejuvenated by warming the crystal to T ≥ 215 K. © 2003 American Institute of Physics.
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78.20.-e Optical properties of bulk materials and thin films

Thermal oxidation of (0001) 4H-SiC at high temperatures in ozone-admixed oxygen gas ambient

Ryoji Kosugi, Kenji Fukuda, and Kazuo Arai

Appl. Phys. Lett. 83, 884 (2003); http://dx.doi.org/10.1063/1.1598621 (3 pages) | Cited 3 times

Online Publication Date: 30 July 2003

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The method of oxidation by atomic oxygen has been developed for gate oxide formation in SiC metal–oxide–semiconductor (MOS) devices. Ozone (O3)–admixed oxygen (O2) gas is introduced into the cold-wall oxidation furnace, where atomic oxygen in a ground state is formed by thermal decomposition of O3 molecules at elevated sample temperatures. The growth rate of oxide in the O3-admixed gas shows a maximum at around 666.4 Pa and 950–1200 °C, whereas the rate in pure O2 gas is negligible below 6664.5 Pa. Interface trap density (Dit) of the MOS capacitors fabricated using atomic oxygen strongly depends on the oxidization temperature; oxidation at 1200 °C results in significant reduction of Dit in comparison with that at 950 °C. © 2003 American Institute of Physics.
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81.65.Mq Oxidation
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.20.Pm Rate constants, reaction cross sections, and activation energies

Optical and structural anisotropy of InP/GaInP quantum dots for laser applications

Y. M. Manz, A. Christ, O. G. Schmidt, T. Riedl, and A. Hangleiter

Appl. Phys. Lett. 83, 887 (2003); http://dx.doi.org/10.1063/1.1598290 (3 pages) | Cited 8 times

Online Publication Date: 30 July 2003

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Self-assembled InP quantum dots, embedded in Ga0.52In0.48P and grown by solid source molecular-beam epitaxy, exhibit strong structural and optical anisotropy. Photoluminescence measurements reveal that the quantum dots are elongated in [1math0] crystal direction and the optical transitions of both the dots and the surrounding GaInP material dominate for light polarized along this direction, whereas embedded compressively strained GaxIn1−xP quantum wells behave isotropically. The comparison of the optical gain of a strained GaxIn1−xP quantum well laser and a threefold stacked quantum-dot laser in [110] and [1math0] directions (edge emission) emphasizes this difference. The gain of the quantum-well laser shows no directional dependence. The quantum-dot laser reveals significantly larger gain for light propagating perpendicular to the dot elongation. Thus, particular care has to be taken to align the cavities of InP/GaInP quantum-dot lasers in [110] direction. © 2003 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
78.67.Hc Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.55.Cr III-V semiconductors
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