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Applied Physics Letters / Volume 83 / Issue 5 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 83, 987 (2003); http://dx.doi.org/10.1063/1.1596712 (3 pages)

InGaAs/GaAs three-dimensionally-ordered array of quantum dots

Yu. I. Mazur1, W. Q. Ma1, X. Wang1, Z. M. Wang1, G. J. Salamo1, M. Xiao1, T. D. Mishima2, and M. B. Johnson2

1Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701
2Department of Physics and Astronomy, University of Oklahoma, Norman, Oklahoma 73019

(Received 6 November 2002; accepted 30 May 2003)

We report on the first fabrication of (In,Ga)As/GaAs quantum dots with both vertical and lateral ordering forming a three-dimensional array. An investigation of the photoluminescence spectra from the ordered array of quantum dots, as a function of both temperature and optical excitation intensity, reveals both a lateral and vertical transfer of excitation. © 2003 American Institute of Physics.

© 2003 American Institute of Physics

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KEYWORDS and PACS

Keywords

indium compounds, gallium arsenide, III-V semiconductors, semiconductor quantum dots, photoluminescence

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1596712

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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