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4 Aug 2003

Volume 83, Issue 5, pp. 817-1056

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 611 (2003); http://dx.doi.org/10.1063/1.1595724 (3 pages)

Chung-Chih Wu, Chieh-Wei Chen, and Ting-Yi Cho
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A monolayer organic light-emitting diode using an organic dye salt

Hongguang Xu, Ruiping Meng, Chunxiang Xu, Junxiang Zhang, Guohua He, and Yiping Cui

Appl. Phys. Lett. 83, 1020 (2003); http://dx.doi.org/10.1063/1.1591068 (3 pages) | Cited 8 times

Online Publication Date: 30 July 2003

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Monolayer organic light-emitting diodes (OLEDs) are fabricated with an organic dye salt as an emitting layer. The emission intensity is one order of magnitude stronger and the luminescent efficiency is four times higher than those of the corresponding monolayer tris(8-hydroxyquinolino) aluminum devices. The optical and electrical characteristics demonstrate the organic salt efficiently balances the charge injection from electrodes, which may be interpreted by considering the polarity of the organic ionic salt. These results suggest a class of novel materials for OLEDs. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices

Generation of coherent gigahertz acoustic phonons in AlGaN/GaN microwave field-effect transistors

Jung-Hoon Song, Qiang Zhang, W. Patterson, A. V. Nurmikko, M. J. Uren, K. P. Hilton, R. S. Balmer, and T. Martin

Appl. Phys. Lett. 83, 1023 (2003); http://dx.doi.org/10.1063/1.1597982 (3 pages) | Cited 3 times

Online Publication Date: 30 July 2003

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We apply an optical probing technique on AlGaN/GaN field-effect transistors to demonstrate that coherent gigahertz phonons are generated copiously under large signal operation. The phonon generation originates from time varying electron screening of the piezoelectric polarization fields in the active region, and may provide a nondiffusive means of energy dissipation for high power devices. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
63.20.-e Phonons in crystal lattices

Improving images from a near-field scanning microwave microscope using a hybrid probe

Jooyoung Kim, Myungsick Kim, Hyun Kim, Doohee Song, Kiejin Lee, and Barry Friedman

Appl. Phys. Lett. 83, 1026 (2003); http://dx.doi.org/10.1063/1.1595134 (3 pages) | Cited 12 times

Online Publication Date: 30 July 2003

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We fabricated a near-field scanning microwave microscope (NSMM) using a hybrid tip combining a reduced length of the tapered part with a small apex. In order to understand the function of the probe, we fabricated three different tips using a conventional chemical etching technique and observed three different NSMM images for patterned Cr films on glass substrates. These probe tips were coupled to a high-quality dielectric resonator at an operating frequency f = 4.46 GHz. By using the hybrid tip, we demonstrated an improved, high-contrast NSMM image of lambda phage DNA on a glass substrate. © 2003 American Institute of Physics.
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07.79.-v Scanning probe microscopes and components
68.37.-d Microscopy of surfaces, interfaces, and thin films
87.64.Dz Scanning tunneling and atomic force microscopy
07.57.-c Infrared, submillimeter wave, microwave and radiowave instruments and equipment
81.65.Cf Surface cleaning, etching, patterning
68.55.-a Thin film structure and morphology
87.14.G- Nucleic acids
87.15.B- Structure of biomolecules
87.80.-y Biophysical techniques (research methods)

Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnO

Hiromichi Ohta, Masahiro Hirano, Ken Nakahara, Hideaki Maruta, Tetsuhiro Tanabe, Masao Kamiya, Toshio Kamiya, and Hideo Hosono

Appl. Phys. Lett. 83, 1029 (2003); http://dx.doi.org/10.1063/1.1598624 (3 pages) | Cited 79 times

Online Publication Date: 30 July 2003

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Transparent trilayered oxide films of ZnO/NiO/indium tin oxide were heteroepitaxially grown on a YSZ (111) substrate by pulsed-laser deposition combined with a solid-phase-epitaxy technique, and were processed to fabricate a p-NiO/n-ZnO diode. The diode exhibited a clear rectifying I–V characteristic with an ideality factor of ∼2 and a forward threshold voltage of ∼1 V. Although the photoresponsivity was fairly weak at the zero-bias voltage, it was enhanced up to ∼0.3 A W−1 through the application of a reverse bias of −6 V under the irradiation of 360 nm light, a value comparable to that of commercial devices. © 2003 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Kk Junction diodes
81.15.Fg Pulsed laser ablation deposition
81.15.Np Solid phase epitaxy; growth from solid phases
85.30.De Semiconductor-device characterization, design, and modeling
85.60.Dw Photodiodes; phototransistors; photoresistors

Near-field scanning microwave microscope using a dielectric resonator

Jooyoung Kim, Kiejin Lee, Barry Friedman, and Deokjoon Cha

Appl. Phys. Lett. 83, 1032 (2003); http://dx.doi.org/10.1063/1.1597984 (3 pages) | Cited 13 times

Online Publication Date: 30 July 2003

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We describe a near-field scanning microwave microscope which uses a high-quality dielectric resonator with a tunable screw. The operating frequency is f = 4.5 GHz. The probe tip is mounted in a cylindrical resonant cavity coupled to a dielectric resonator for the TE011 mode. We tuned the resonance cavity to match the impedance of 50 Ω by using a tunable screw and could improve sensitivity and spatial resolution to better than 1 μm. To demonstrate the ability of local microwave characterization, the surface resistance dependence of the metallic thin films on film thickness has been mapped. © 2003 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
68.37.Uv Near-field scanning microscopy and spectroscopy

High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN

Toshiki Makimoto, Kazuhide Kumakura, and Naoki Kobayashi

Appl. Phys. Lett. 83, 1035 (2003); http://dx.doi.org/10.1063/1.1597989 (3 pages) | Cited 21 times

Online Publication Date: 30 July 2003

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GaN/InGaN double heterojunction bipolar transistors with a regrown p-InGaN extrinsic base have been fabricated on SiC substrates. The maximum common-emitter current gain exceeds 2000 at the collector current of 15 mA for a 50 μm×30 μm device. In addition, the offset voltage in the common-emitter current–voltage characteristics was reduced from 5 to 1 V. This indicates that the large offset voltage reported previously was mainly due to the degraded base ohmic characteristics. The regrowth of p-InGaN is effective for improving the characteristics of nitride heterojunction bipolar transistors. © 2003 American Institute of Physics.
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85.30.Pq Bipolar transistors

Improved performance and stability of organic light-emitting devices with silicon oxy-nitride buffer layer

C. O. Poon, F. L. Wong, S. W. Tong, R. Q. Zhang, C. S. Lee, and S. T. Lee

Appl. Phys. Lett. 83, 1038 (2003); http://dx.doi.org/10.1063/1.1598287 (3 pages) | Cited 28 times

Online Publication Date: 30 July 2003

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The use of silicon oxy-nitride (SiOxNy) as an anode buffer layer in organic light-emitting devices (OLEDs) with a configuration of indium tin oxide (ITO)/SiOxNy/α-naphtylphenyliphenyl diamine (NPB)/8-hydroxyquinoline aluminum/Mg:Ag has been studied. With a SiOxNy buffer layer several angstroms thick, the device efficiency increased from 3.0 to 3.8 cd/A. The buffer layer also protected the ITO surface from contamination due to air exposure. Upon exposing the cleaned ITO substrate to air for one day before device fabrication, the device current efficiency and turn-on voltage degraded to 2.1 cd/A and 4.3 V, respectively, from 3 cd/A and 3.3 V for the device fabricated on an as-cleaned ITO surface. In contrast, devices prepared on air-exposed SiOxNy/ITO surface had almost the same current efficiency (3.85 cd/A) and turn on voltage (3.7 V) comparing to devices (3.8 cd/A and 3.7 V) fabricated on freshly prepared SiOxNy/ITO surface. The results suggested that SiOxNy is a promising anode buffer layer for OLEDs, for both efficiency and stability enhancements. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
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