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4 Aug 2003

Volume 83, Issue 5, pp. 817-1056

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Appl. Phys. Lett. 83, 611 (2003); http://dx.doi.org/10.1063/1.1595724 (3 pages)

Chung-Chih Wu, Chieh-Wei Chen, and Ting-Yi Cho
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Electric fatigue in Pb(Nb,Zr,Sn,Ti)O3 thin films grown by a sol–gel process

Jiwei Zhai and Haydn Chen

Appl. Phys. Lett. 83, 978 (2003); http://dx.doi.org/10.1063/1.1594843 (3 pages) | Cited 10 times

Online Publication Date: 30 July 2003

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Antiferroelectric Pb(Nb,Zr,Sn,Ti)O3 (PNZST) thin films were deposited via a sol–gel process on LaNiO3-buffered Pt/Ti/SiO2/Si substrates. The highly (100)-oriented LaNiO3 buffer layer facilitated the formation of high-quality PNZST films with a strong (100) preferred orientation. These films showed improved electric fatigue properties than those grown on Pt/Ti/SiO2/Si substrates. With increasing cycling field, the remanent polarization increases but the saturated polarization decreases. Fatigue properties of PNZST antiferroelectric thin films might be closely related to the nonuniform strain buildup due to switching that tends to stabilize the ferroelectric phase. © 2003 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.80.Fm Switching phenomena
68.55.-a Thin film structure and morphology
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Improvement in retention time of metal–ferroelectric–metal– insulator–semiconductor structures using MgO doped Ba0.7Sr0.3TiO3 insulator layer

T. Y. Tseng and S. Y. Lee

Appl. Phys. Lett. 83, 981 (2003); http://dx.doi.org/10.1063/1.1597412 (3 pages) | Cited 5 times

Online Publication Date: 30 July 2003

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We report the results of the fabrication and characterization of Pt/Bi3.35La0.85Ti3O12 (BLT)/LaNiO3 (LNO)/Ba0.7Sr0.3TiO3 (BST)/Si metal–ferroelectric–metal–insulator–semiconductor (MFMIS) structures for ferroelectric memory field effect transistor applications. The BLT films were deposited on LNO/BST/Si using the metalorganic decomposition method and annealed by rapid thermal annealing (RTA) process at 600 °C for 3 min. The ratio of remanent polarization to saturation polarization (Pr/Ps) increases with reducing area ratio, AF/AI. A large memory window of 3.1 V can be obtained for a small AF/AI ratio. By the utilization of 5 mol % MgO doped BST insulator layer, LNO bottom electrode layer for BLT, and small area ratio, AF/AI = 1/12 in the MFMIS structure, large Pr/Ps ratio in BLT film and low leakage current and good capacitance matching of the ferroelectric and the insulator in the MFMIS structures have been achieved and, hence, long data retention time >106 s has been obtained in this study. Experimental results demonstrate the significant progress in increase of the retention time of these structures, which make them attractive for practical ferroelectric memory field effect transistor applications. © 2003 American Institute of Physics.
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85.50.Gk Non-volatile ferroelectric memories
85.30.Tv Field effect devices
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
61.72.Cc Kinetics of defect formation and annealing
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