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4 Aug 2003

Volume 83, Issue 5, pp. 817-1056

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 611 (2003); http://dx.doi.org/10.1063/1.1595724 (3 pages)

Chung-Chih Wu, Chieh-Wei Chen, and Ting-Yi Cho
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Evidence of the Meyer–Neldel rule in InGaAsN alloys and the problem of determining trap capture cross sections

Steven W. Johnston, Richard S. Crandall, and Arthur Yelon

Appl. Phys. Lett. 83, 908 (2003); http://dx.doi.org/10.1063/1.1596713 (3 pages) | Cited 10 times

Online Publication Date: 30 July 2003

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Deep-level transient spectroscopy measurements have been performed on the quaternary semiconductor InGaAsN. A series of as-grown and annealed metalorganic chemical-vapor-deposited and molecular-beam-epitaxy samples with varying composition were studied. We observed a deep hole trap with activation energy ranging between 0.5 and 0.8 eV in all samples. The data clearly obey the Meyer–Neldel rule (MNR) with an isokinetic temperature of 350 K. We show that great care must be used in extracting capture cross sections (σ) from materials that obey the MNR. In fact, we argue that it is probably not possible to determine σ from the detrapping rate alone. One must measure both trapping and detrapping rates. © 2003 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.20.Hb Impurity and defect levels; energy states of adsorbed species
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Electron relaxation and transport dynamics in low-temperature-grown GaAs under 1 eV optical excitation

Chi-Kuang Sun, Yen-Hung Chen, Jin-Wei Shi, Yi-Jen Chiu, Kian-Giap Gan, and John E. Bowers

Appl. Phys. Lett. 83, 911 (2003); http://dx.doi.org/10.1063/1.1595131 (3 pages) | Cited 4 times

Online Publication Date: 30 July 2003

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Electron relaxation and transport dynamics in low-temperature-grown GaAs under 1 eV optical excitation was investigated by femtosecond transient transmission measurement and electro-optical sampling measurement in bulk samples and fabricated devices. An increase in the electron lifetime can be observed when the electron density is higher than 3×1017 cm−3. This effect is attributed to prolonged electron relaxation due to intervalley scattering of highly excited electrons and associated hot phonon effects. Our conclusion is further supported by bias-dependent studies where intervalley scattering was achieved using high electric fields. © 2003 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
63.20.K- Phonon interactions
73.50.Pz Photoconduction and photovoltaic effects
78.47.-p Spectroscopy of solid state dynamics
78.20.Jq Electro-optical effects

Effect of high temperature and interface treatments on photoluminescence from InGaN/GaN multiple quantum wells with green light emissions

W. Liu, S. J. Chua, X. H. Zhang, and J. Zhang

Appl. Phys. Lett. 83, 914 (2003); http://dx.doi.org/10.1063/1.1597990 (3 pages) | Cited 8 times

Online Publication Date: 30 July 2003

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InGaN/GaN multiple quantum wells (MQWs) with emission peaks in the green light region were grown by metalorganic chemical vapor deposition. Photoluminescence (PL) measurements on these samples showed extra peaks in the spectrum beside the green emission due to reactor temperature ramping up to 1000 °C after the MQWs growth. It was found that growth interruption at the upper interface of MQWs combining with interface treatment by H2 flow could eliminate these extra peaks. Our analysis of the PL spectra suggested that these extra emission peaks originate due to the occurrence of In segregation in the upper part of the quantum wells induced by partial strain relaxation in the processes of high temperature treatment, and the interface treatment with H2 flow can suppress this phase separation phenomenon. © 2003 American Institute of Physics.
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78.67.De Quantum wells
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors

Effect of Al doping in GaN films grown by metalorganic chemical vapor deposition

Jae-Hoon Lee, Sung-Ho Hahm, Jung-Hee Lee, Sung-Bum Bae, Kyu-Seok Lee, Yong-Hoon Cho, and Jong-Lam Lee

Appl. Phys. Lett. 83, 917 (2003); http://dx.doi.org/10.1063/1.1597423 (3 pages) | Cited 6 times

Online Publication Date: 30 July 2003

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The effect of Al doping in GaN films grown by metalorganic chemical vapor deposition was investigated using photoluminescence (PL), time-resolved PL, Hall measurements, and reciprocal space map. The electron mobility measured at 300 (150) K by a Hall measurement significantly increased from 170 (185) cm2/V s in the undoped sample to 524 (744) cm2/V s in the Al-doped sample grown with a molar flow rate ratio Al/(Al+Ga) of 0.056. When increasing the incorporation of Al in GaN, the band edge photoluminescence emission intensity was enhanced by about one order of magnitude compared to the undoped GaN. In addition, an increase in the decay lifetime of the GaN band edge emission was observed with the Al-doped GaN. In conclusion, the incorporation of only a small amount of Al in GaN was found to significantly reduce the point-defect-related electron scattering center associated with the compensating acceptors (Ga vacancies or their complexes) and nonradiative recombination centers, thereby improving the electrical and optical properties of GaN films. © 2003 American Institute of Physics.
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71.55.Eq III-V semiconductors
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.55.Cr III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.47.-p Spectroscopy of solid state dynamics
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.50.Dn Low-field transport and mobility; piezoresistance
61.72.J- Point defects and defect clusters

Magnetism in Mn-doped ZnO bulk samples prepared by solid state reaction

S-J. Han, T.-H. Jang, Y. B. Kim, B.-G. Park, J.-H. Park, and Y. H. Jeong

Appl. Phys. Lett. 83, 920 (2003); http://dx.doi.org/10.1063/1.1597414 (3 pages) | Cited 111 times

Online Publication Date: 30 July 2003

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Contrasting magnetic properties were obtained from bulk Mn-doped ZnO synthesized under different processing conditions. While a ferrimagnetic phase transition was observable in a Zn0.95Mn0.05O sample processed at 1170 K, no such transition was found for a sample with the same composition processed at 1370 K. The detailed magnetic, structural, and spectroscopic studies of these two samples have revealed that the ferrimagnetic transition in the former sample is attributable to the secondary phase, (Mn,Zn)Mn2O4, in the system. For the latter sample processed at higher temperature, no secondary phase was detected and the major feature of the system remained paramagnetic down to 4 K. The implication of the present results for Mn-doped ZnO thin films is discussed. © 2003 American Institute of Physics.
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75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.50.Pp Magnetic semiconductors
75.50.Gg Ferrimagnetics

Interstitial H and H2 in SiC

M. Kaukonen, C. J. Fall, and J. Lento

Appl. Phys. Lett. 83, 923 (2003); http://dx.doi.org/10.1063/1.1598646 (3 pages) | Cited 8 times

Online Publication Date: 30 July 2003

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The properties of hydrogen in 3C and 4H type silicon carbide (SiC) are studied theoretically at the density functional level. We find that only singly positive or negative charge states of hydrogen are thermodynamically stable in SiC. The transition from the positive to the negative charge state (+/−) is at 0.9 and 1.3 eV above the valence band maximum in 3C and 4H structures, respectively. The diffusion barrier for the proton is 0.5 eV (being, however, anisotropic in 4H). For the negative H− the diffusion barrier is found to be considerably higher, of the order of 3 eV.© 2003 American Institute of Physics.
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71.55.Ht Other nonmetals
61.72.J- Point defects and defect clusters
66.30.Lw Diffusion of other defects
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

Effect of boron neutralization on interface state creation after direct tunneling injections at 100 °C in 2,3-nm ultrathin gate oxides

D. Zander, J. Boch, F. Saigné, A. Meinertzhagen, and O. Simonetti

Appl. Phys. Lett. 83, 926 (2003); http://dx.doi.org/10.1063/1.1598291 (2 pages) | Cited 1 time

Online Publication Date: 30 July 2003

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Interface state creation, after different positive and negative electron direct tunneling injections at elevated temperature are studied. A degradation peak at 100 °C is observed after positive stresses. This peak is attributed to the propensity for boron to be neutralized by hydrogen at this temperature. © 2003 American Institute of Physics.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Gk Tunneling
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.up Other materials
61.82.Ms Insulators

Interface recombination velocity of silicon-on-insulator wafers measured by microwave reflectance photoconductivity decay method with electric field

Toshio Kuwayama, Masaya Ichimura, and Eisuke Arai

Appl. Phys. Lett. 83, 928 (2003); http://dx.doi.org/10.1063/1.1597988 (3 pages) | Cited 9 times

Online Publication Date: 30 July 2003

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The interface recombination velocity of silicon-on-insulator (SOI) wafers was measured by the microwave-reflectance photoconductivity-decay method. The carrier lifetime was obtained with interface recombination suppressed by applying voltage between the SOI layer and the substrate. The interface recombination velocity was then estimated by comparing two lifetime values with and without voltage application. The velocity is from 500 to 1800 cm/s, relatively large as for thermally oxidized Si/SiO2 interfaces. © 2003 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Pz Photoconduction and photovoltaic effects
73.50.Mx High-frequency effects; plasma effects

Hydrogenation of Si from SiNx(H) films: Characterization of H introduced into the Si

Fan Jiang, Michael Stavola, A. Rohatgi, D. Kim, J. Holt, H. Atwater, and J. Kalejs

Appl. Phys. Lett. 83, 931 (2003); http://dx.doi.org/10.1063/1.1598643 (3 pages) | Cited 12 times

Online Publication Date: 30 July 2003

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A promising method to introduce H into multicrystalline Si solar cells in order to passivate bulk defects is by the postdeposition annealing of a H-rich, SiNx surface layer. It has previously been difficult to characterize the small concentration of H that is introduced by this method. Infrared spectroscopy has been used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiNx film. © 2003 American Institute of Physics.
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84.60.Jt Photoelectric conversion
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.65.Rv Passivation
78.30.Hv Other nonmetallic inorganics

Study on interfacial dislocations of Si substrate/epitaxial layer by self-interstitial decoration technique

Lin Shao, Xuemei Wang, Irene Rusakova, Hui Chen, Jiarui Liu, Phillip E. Thompson, and Wei-Kan Chu

Appl. Phys. Lett. 83, 934 (2003); http://dx.doi.org/10.1063/1.1596385 (3 pages) | Cited 2 times

Online Publication Date: 30 July 2003

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Trapping of migrating Si interstitials at substrate/epitaxial interfaces during high-energy Si ion bombardment has been observed. It shows that the interface of Si/Si layer, grown by molecular-beam epitaxy, is a strong sink for self-interstitials during MeV bombardment at room temperature. We reported the finding and applied it as a decoration technique to study evolution of interfacial dislocations. After the thermal annealing of Si/Si layers at a temperature ranging from 450 to 600 °C, samples were bombarded with MeV Si ions at room temperature. Trapped Si interstitials at the interface were quantitatively measured by Rutherford backscattering spectrometry. The integration of trapped interstitials, which indicates an activation energy for the interfacial defect release of 0.65 eV, suggests a weak binding of stored Si atoms in the interfacial dislocations. © 2003 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Cc Kinetics of defect formation and annealing
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors

Organic bistable molecular memory using photochromic diarylethene

Tsuyoshi Tsujioka and Hayato Kondo

Appl. Phys. Lett. 83, 937 (2003); http://dx.doi.org/10.1063/1.1597966 (3 pages) | Cited 61 times

Online Publication Date: 30 July 2003

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A principle of organic memory device using a bistable photochromic molecule is presented that allows extremely high bit densities and very low power consumption. This device is based on an isomerization reaction of photochromic diarylethene molecule via its excited state by an electric carrier injection, not by photon absorption. Experimental data show that the reversible writing and nondestructive reading of information by the carrier injection is feasible. The advantages and properties of such an organic semiconductor memory using a bistable molecule are discussed. © 2003 American Institute of Physics.
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85.65.+h Molecular electronic devices
82.30.Qt Isomerization and rearrangement

Spin-dependent transmission in waveguides with periodically modulated strength of the spin-orbit interaction

X. F. Wang and P. Vasilopoulos

Appl. Phys. Lett. 83, 940 (2003); http://dx.doi.org/10.1063/1.1597980 (3 pages) | Cited 6 times

Online Publication Date: 30 July 2003

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The electron transmission T is evaluated through waveguides, in which the strength of the spin-orbit interaction α is varied periodically, using the transfer-matrix technique. It is shown that T exhibits a spin-transistor action, as a function of α or of the length of one of the two subunits of the unit cell, provided only one mode is allowed to propagate in the waveguide. A similar but not periodic behavior occurs as a function of the incident electron energy. A transparent formula for T through one unit is obtained and helps explain its periodic behavior. The structure considered is a good candidate for the establishment of a realistic spin transistor. © 2003 American Institute of Physics.
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85.35.Ds Quantum interference devices
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Rectification properties of layered boron nitride films on silicon

K. Nose, K. Tachibana, and T. Yoshida

Appl. Phys. Lett. 83, 943 (2003); http://dx.doi.org/10.1063/1.1597744 (3 pages) | Cited 14 times

Online Publication Date: 30 July 2003

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Cubic boron nitride (c-BN)/turbostratic boron nitride (t-BN) layered films were deposited on n-type Si substrates, and their rectification properties were investigated. Rectification in a typical n-type/p-type diode was observed in the current–voltage characteristics of c-BN film with a thin t-BN initial layer. However, the rectification polarity was inverted in the double-layered film with thick t-BN, where conduction was found to be caused by Schottky and Frenkel–Poole emission conduction mechanisms, depending on the range of bias applied. In the case of a thick t-BN single-layered film, the Frenkel–Poole emission conduction mechanism governed the conduction. © 2003 American Institute of Physics.
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73.40.Ei Rectification
73.61.Ey III-V semiconductors
85.30.Kk Junction diodes

Gettering of Pd to implantation-induced nanocavities in Si

D. A. Brett, G. de M. Azevedo, D. J. Llewellyn, and M. C. Ridgway

Appl. Phys. Lett. 83, 946 (2003); http://dx.doi.org/10.1063/1.1597424 (2 pages) | Cited 8 times

Online Publication Date: 30 July 2003

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The gettering of Pd to nanocavities in Si for implantation doses ranging from 5×1013 to 1×1015 cm−2 and annealing temperatures ranging from 750 to 1050 °C was investigated using Rutherford backscattering and cross-sectional transmission electron microscopy. For a given annealing temperature, the gettering efficiency increased as the dose decreased. For a given dose, maximum gettering efficiency was achieved at the intermediate temperatures studied. Competition between silicide formation and nanocavity gettering limited gettering efficiency. © 2003 American Institute of Physics.
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61.72.Yx Interaction between different crystal defects; gettering effect
61.72.uf Ge and Si
61.72.Cc Kinetics of defect formation and annealing
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)
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