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4 Aug 2003

Volume 83, Issue 5, pp. 817-1056

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 611 (2003); http://dx.doi.org/10.1063/1.1595724 (3 pages)

Chung-Chih Wu, Chieh-Wei Chen, and Ting-Yi Cho
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Low tunnel magnetoresistance dependence versus bias voltage in double barrier magnetic tunnel junction

S. Colis, G. Gieres, L. Bär, and J. Wecker

Appl. Phys. Lett. 83, 948 (2003); http://dx.doi.org/10.1063/1.1597964 (3 pages) | Cited 19 times

Online Publication Date: 30 July 2003

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We report on the magnetic and transport properties of [IrMn8/CoFe1.5]/AlOx1.2/[CoFe1/NiFe5/CoFe1]/AlOx1.2/[CoFe1.5/IrMn8] (nanometer) double magnetic tunnel junctions (DMTJs) deposited by magnetron sputtering and patterned using optical lithography. The tunnel magnetoresistance (TMR) versus the bias voltage presents a symmetric characteristic, which indicates a good and similar quality of both AlOx barriers. The junctions show a resistance-area product about 35 kΩ μm2, a high TMR at room temperature of 49.5%, and a high bias voltage at which the TMR signal is decreased to half of its maximum value, V1/2DMTJ = 1.33 V. Both hard magnetic layers are rigid in negative field up to 51.5 kA/m, while the coercive field of the soft layer is around 1.1 kA/m. The large difference of coercive fields, combined with the large TMR and V1/2, makes these systems very promising for spin electronic devices. © 2003 American Institute of Physics.
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75.47.Np Metals and alloys
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
81.15.Cd Deposition by sputtering

Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers

Sebastiaan van Dijken, Xin Jiang, and Stuart S. P. Parkin

Appl. Phys. Lett. 83, 951 (2003); http://dx.doi.org/10.1063/1.1592001 (3 pages) | Cited 40 times

Online Publication Date: 30 July 2003

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We report large magnetic field sensitivities of the collector current in a three-terminal magnetic tunnel transistor device with spin-valve metallic base layers. Giant magnetocurrents exceeding 3400% result from strong spin-dependent filtering of electrons traversing perpendicular to the spin-valve layers at energies well above the Fermi energy. The output current of the device can readily be tuned into the microampere regime by increasing the bias voltage across the tunnel barrier. With its giant magnetocurrent and reasonable output current, the magnetic tunnel transistor is a promising candidate for future magnetoelectronic devices. © 2003 American Institute of Physics.
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85.75.Mm Spin polarized resonant tunnel junctions
75.50.Bb Fe and its alloys
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

Magnetization-dependent rectification effect in a Ge-based magnetic heterojunction

F. Tsui, L. Ma, and L. He

Appl. Phys. Lett. 83, 954 (2003); http://dx.doi.org/10.1063/1.1597967 (3 pages) | Cited 15 times

Online Publication Date: 30 July 2003

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We report a study of a promising Ge-based magnetic heterojunction diode composed of a CoMn-doped Ge film grown epitaxially on lightly doped n-type Ge (001) substrate. The current rectification of the diode can be controlled either by the bias voltage or by the magnetic field. The findings not only demonstrate the viability of producing fully electronic spin devices, but also provide relevant parameters for one type of devices that are compatible with current Si-based device technology. © 2003 American Institute of Physics.
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73.40.Ei Rectification
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
85.30.Kk Junction diodes

Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interface

A. Baikalov, Y. Q. Wang, B. Shen, B. Lorenz, S. Tsui, Y. Y. Sun, Y. Y. Xue, and C. W. Chu

Appl. Phys. Lett. 83, 957 (2003); http://dx.doi.org/10.1063/1.1590741 (3 pages) | Cited 209 times

Online Publication Date: 30 July 2003

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The hysteretic and reversible polarity-dependent resistive switch driven by electric pulses is studied in both Ag/Pr0.7Ca0.3MnO3/YBa2Cu3O7 sandwiches and single-layer Pr0.7Ca0.3MnO3 strips. The data demonstrate that the switch takes place at the Ag–Pr0.7Ca0.3MnO3 interface. A model, which describes the data well, is proposed. We further suggest that electrochemical migration is the cause for the switch. © 2003 American Institute of Physics.
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72.60.+g Mixed conductivity and conductivity transitions
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Dd Nonmetallic ferromagnetic materials

Very large giant magnetoresistance of spin valves with specularly reflective oxide layers

Jongill Hong, Kenji Noma, Eiichi Kanda, and Hitoshi Kanai

Appl. Phys. Lett. 83, 960 (2003); http://dx.doi.org/10.1063/1.1597751 (3 pages) | Cited 10 times

Online Publication Date: 30 July 2003

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We developed a spin valve with oxide specular layers that shows a giant magnetoresistance value of 20%. The spin valve also showed an exchange bias field of over 1000 Oe. The giant magnetoresistance was mainly due to an increase in the sheet resistance change and resulted from additional specular reflection at the interface of the free layer. The method we used was to modify specularly reflective oxide layers of the free and the capping layers. © 2003 American Institute of Physics.
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75.47.De Giant magnetoresistance
75.30.Et Exchange and superexchange interactions
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

YBa2Cu3O7−δ step-edge Josephson junctions fabricated on sapphire substrates

Bin Ming and T. Venkatesan

Appl. Phys. Lett. 83, 963 (2003); http://dx.doi.org/10.1063/1.1596373 (3 pages)

Online Publication Date: 30 July 2003

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Sapphire is an ideal substrate for cryogenic device technologies. We report here the fabrication of YBa2Cu3O7−δ step-edge junctions on the R-plane (1math02) sapphire substrates. With an “overhang” shadow mask produced by a photolithography technique, a steep step edge was created on the CeO2 buffer layer by Ar+ ion milling with optimized parameters for minimum ion-beam divergence. The step angle was determined to be in excess of 80° by atomic force microscopy. Josephson junctions fabricated from those step edges exhibited resistively shunted junction like current–voltage characteristics. IcRn values in the 200–500 μV range were measured at 77 K. Shapiro steps were observed under microwave irradiation. The magnetic field dependence of the junction Ic indicates uniform current distribution. © 2003 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects
74.78.-w Superconducting films and low-dimensional structures
61.80.Jh Ion radiation effects

Magnetically induced phase separation and magnetic properties of Co–Mo hexagonal-close-packed structure thin films

K. Oikawa, G. W. Qin, M. Sato, O. Kitakami, Y. Shimada, J. Sato, K. Fukamichi, and K. Ishida

Appl. Phys. Lett. 83, 966 (2003); http://dx.doi.org/10.1063/1.1597746 (3 pages) | Cited 6 times

Online Publication Date: 30 July 2003

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Magnetically induced phase separation along the Curie temperature in the hexagonal-close-packed phase of a Co–Mo binary system has been predicted by thermodynamic calculations. Furthermore, the phase separation and magnetic properties of Co–Mo sputtered thin films have been investigated. Nanoscale compositional fluctuation caused by the magnetically induced phase separation has been confirmed in the films deposited on a heated substrate in the same manner as Co–Cr-based alloys. The magnetic anisotropy constant of the Co–Mo films is larger than that of Co–Cr films. From these results, it is concluded that the Co–Mo system is promising for use as a base alloy system for high density recording media. © 2003 American Institute of Physics.
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75.70.Ak Magnetic properties of monolayers and thin films
64.75.-g Phase equilibria
68.55.Nq Composition and phase identification
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.30.Gw Magnetic anisotropy
75.50.Ss Magnetic recording materials
81.15.Cd Deposition by sputtering

Effects of magnetic field on two-dimensional superconducting quantum interference filters

J. Oppenländer, P. Caputo, Ch. Häussler, T. Träuble, J. Tomes, A. Friesch, and N. Schopohl

Appl. Phys. Lett. 83, 969 (2003); http://dx.doi.org/10.1063/1.1597753 (3 pages) | Cited 9 times

Online Publication Date: 30 July 2003

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We present an experimental study of two-dimensional (2D) superconducting quantum interference filters (SQIFs) in the presence of a magnetic field B. Although the nonlinear dynamics of the 2D SQIF are much more complex than those of previously studied one-dimensional SQIFs, we found for the 2D SQIF a similar dependence of the voltage V on the magnetic field applied, which is characterized by a unique delta-like dip at B = 0. The voltage span of the dip depends on the distribution of areas of the individual loops, and on the bias current, and it scales proportionally to the number of rows simultaneously operating at the same working point. In addition, the voltage response of individual rows of the 2D SQIF is sensitive to the field gradient generated by a control line superimposed on the homogeneous field of a coil. This feature suggests the use of these devices as highly sensitive absolute detectors of spatial gradients of the magnetic field. © 2003 American Institute of Physics.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
84.30.Vn Filters

Propagating spin wave spectroscopy in a permalloy film: A quantitative analysis

Matthieu Bailleul, Dominik Olligs, and Claude Fermon

Appl. Phys. Lett. 83, 972 (2003); http://dx.doi.org/10.1063/1.1597745 (3 pages) | Cited 10 times

Online Publication Date: 30 July 2003

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We report on the microwave response of micrometer-wide antennas inductively coupled to a 30 nm thick permalloy film. We show that the self-inductance of a single antenna measures the coupling between the exciting current and the spin wave modes of the film. On the other hand, the signal transmitted to a second, distant antenna is used to observe the free relaxation law of a magnetostatic wave packet. All measurements, performed over a frequency range of 1–20 GHz, are quantitatively consistent with magnetostatic wave theory combined with Gilbert formulation of the damping. © 2003 American Institute of Physics.
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75.30.Ds Spin waves
75.50.Bb Fe and its alloys
75.70.Ak Magnetic properties of monolayers and thin films

Epitaxial growth and magnetic properties of EuO on (001) Si by molecular-beam epitaxy

J. Lettieri, V. Vaithyanathan, S. K. Eah, J. Stephens, V. Sih, D. D. Awschalom, J. Levy, and D. G. Schlom

Appl. Phys. Lett. 83, 975 (2003); http://dx.doi.org/10.1063/1.1593832 (3 pages) | Cited 26 times

Online Publication Date: 30 July 2003

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Epitaxial (001) EuO thin films have been grown on (001) Si utilizing an intermediate, epitaxial SrO buffer layer by molecular-beam epitaxy. Four-circle x-ray diffraction reveals nearly phase-pure samples. Magnetic measurements indicate that the EuO layer is ferromagnetic, with a transition temperature (68 K) close to the bulk value and a saturation magnetic moment of 4.7 Bohr magnetons per Eu atom. The magneto-optic Kerr effect observed is also comparable to bulk EuO. Such heterostructures have potential as a means to inject spin-polarized electrons into silicon for use in spintronics applications. © 2003 American Institute of Physics.
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75.50.Pp Magnetic semiconductors
75.70.Ak Magnetic properties of monolayers and thin films
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
72.25.Dc Spin polarized transport in semiconductors
72.25.Hg Electrical injection of spin polarized carriers
68.55.Nq Composition and phase identification
75.50.Dd Nonmetallic ferromagnetic materials
78.20.Ls Magneto-optical effects
81.05.Hd Other semiconductors
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