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4 Aug 2003

Volume 83, Issue 5, pp. 817-1056

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 611 (2003); http://dx.doi.org/10.1063/1.1595724 (3 pages)

Chung-Chih Wu, Chieh-Wei Chen, and Ting-Yi Cho
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Size-dependent radiative decay time of excitons in GaN/AlN self-assembled quantum dots

S. Kako, M. Miyamura, K. Tachibana, K. Hoshino, and Y. Arakawa

Appl. Phys. Lett. 83, 984 (2003); http://dx.doi.org/10.1063/1.1596382 (3 pages) | Cited 24 times

Online Publication Date: 30 July 2003

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Size-dependent radiative decay time of excitons in GaN/AlN self-assembled quantum dots is reported. Two samples having different average size of quantum dots (QDs) have been investigated at the temperature of 3.5 K. The measurement has revealed that larger-QD sample shows longer photoluminescence (PL) decay time and smaller emission energy than smaller one. The dependence of radiative decay time of the samples on emission energy smoothly connects with each other reflecting the size distribution. The radiative decay time strongly increases by almost three orders magnitude, reaching microseconds, upon increasing the size of QDs. The increase of PL decay time with increasing the size of QDs is attributed to the reduction of oscillator-strength due to the strong built-in electric field in the GaN/AlN heterostructures. © 2003 American Institute of Physics.
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78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
71.35.-y Excitons and related phenomena

InGaAs/GaAs three-dimensionally-ordered array of quantum dots

Yu. I. Mazur, W. Q. Ma, X. Wang, Z. M. Wang, G. J. Salamo, M. Xiao, T. D. Mishima, and M. B. Johnson

Appl. Phys. Lett. 83, 987 (2003); http://dx.doi.org/10.1063/1.1596712 (3 pages) | Cited 48 times

Online Publication Date: 30 July 2003

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We report on the first fabrication of (In,Ga)As/GaAs quantum dots with both vertical and lateral ordering forming a three-dimensional array. An investigation of the photoluminescence spectra from the ordered array of quantum dots, as a function of both temperature and optical excitation intensity, reveals both a lateral and vertical transfer of excitation. © 2003 American Institute of Physics.
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78.67.Hc Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
78.55.Cr III-V semiconductors

Fabrication and mechanical characterization of ultrashort nanocantilevers

S. G. Nilsson, E.-L. Sarwe, and L. Montelius

Appl. Phys. Lett. 83, 990 (2003); http://dx.doi.org/10.1063/1.1592303 (3 pages) | Cited 10 times

Online Publication Date: 30 July 2003

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Three aspects on nanocantilevers are presented in this letter. First, we present the fabrication process of 2 μm long freestanding chromium cantilevers with width 150 nm, and thickness 50 nm. Second, a measurement scheme using an atomic force microscope operating in contact mode was employed to study the mechanical properties along the length of the cantilevers. Third, we have investigated extremely large deflections on these nanoscale cantilevers demonstrating their high ductility. The spring constants calculated from the experimental data are smaller than expected from classical mechanics calculations, but show good agreement with previously reported calculations for largely deflected beams. © 2003 American Institute of Physics.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.07.-b Nanoscale materials and structures: fabrication and characterization
62.25.-g Mechanical properties of nanoscale systems
68.37.Ps Atomic force microscopy (AFM)
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep

Nanoscale mechanical behavior of individual semiconducting nanobelts

Scott X. Mao, Minhua Zhao, and Zhong Lin Wang

Appl. Phys. Lett. 83, 993 (2003); http://dx.doi.org/10.1063/1.1597754 (3 pages) | Cited 43 times

Online Publication Date: 30 July 2003

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Nanobelts are a group of materials that have a rectangle-like cross section with typical widths of several hundred nanometers, width-to-thickness ratios of 5–10, and lengths of hundreds of micrometers. In this letter, nanoindentations were made in individual ZnO and SnO2 nanobelts by a cube corner diamond indenter. It is shown that the effect of indentation size is still obvious for indentation depths less than 50 nm. It is also demonstrated that nanomachining of nanobelts is possible using an atomic force microscope tip. © 2003 American Institute of Physics.
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62.25.-g Mechanical properties of nanoscale systems
68.35.Gy Mechanical properties; surface strains
61.46.-w Structure of nanoscale materials

Polarization-dependent reflectivity from dielectric nanowires

Y. Du, Song Han, Wu Jin, C. Zhou, and A. F. J. Levi

Appl. Phys. Lett. 83, 996 (2003); http://dx.doi.org/10.1063/1.1598283 (3 pages) | Cited 8 times

Online Publication Date: 30 July 2003

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The presence of GaN nanowires grown primarily normal to the surface of a sapphire substrate has a dramatic influence on the polarization dependence of laser light reflectivity at λ = 1550-nm wavelength. Even at 12% substrate surface coverage, there is a factor of 2 enhancement in polarization dependence of reflectivity relative to bulk sapphire at values of incident angle greater than ϕ = 72°. © 2003 American Institute of Physics.
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78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
61.46.-w Structure of nanoscale materials
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Ga-filled single-crystalline MgO nanotube: Wide-temperature range nanothermometer

Y. B. Li, Y. Bando, D. Golberg, and Z. W. Liu

Appl. Phys. Lett. 83, 999 (2003); http://dx.doi.org/10.1063/1.1597422 (3 pages) | Cited 39 times

Online Publication Date: 30 July 2003

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A highly effective one-step approach was developed to synthesize single-crystalline MgO nanotubes and in situ fill nanotubes with Ga. The axes of nanotubes are in the [100] direction of cubic MgO. The prepared nanotube exhibits a square-like cross section both for its interior and exterior. The liquid metal-assisted route is suggested to be a general way to prepare oxide nanotubes. Linear thermal expansion behavior recorded for liquid gallium column confined in the MgO nanotube makes possible creation of a wide-temperature range nanothermometer with superior mechanical properties and environmental structural stability. © 2003 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
07.20.Dt Thermometers
85.35.Kt Nanotube devices
81.07.De Nanotubes
65.40.De Thermal expansion; thermomechanical effects
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems

Nanoscale radio-frequency thermometry

D. R. Schmidt, C. S. Yung, and A. N. Cleland

Appl. Phys. Lett. 83, 1002 (2003); http://dx.doi.org/10.1063/1.1597983 (3 pages) | Cited 21 times

Online Publication Date: 30 July 2003

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We experimentally demonstrate the high bandwidth readout of a thermometer based on a superconductor–insulator–normal metal (SIN) tunnel junction, embedded in a rf resonant circuit. Our implementation enables basic studies of the thermodynamics of mesoscopic nanostructures. It can also be applied to the development of fast calorimeters, as well as ultrasensitive bolometers for the detection of far-infrared radiation. We discuss the operational details of this device, and estimate the ultimate temperature sensitivity and measurement bandwidth. © 2003 American Institute of Physics.
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07.20.Dt Thermometers
07.20.Fw Calorimeters
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.35.-p Nanoelectronic devices
85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors

High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems

K. Kobayashi, M. Yabashi, Y. Takata, T. Tokushima, S. Shin, K. Tamasaku, D. Miwa, T. Ishikawa, H. Nohira, T. Hattori, Y. Sugita, O. Nakatsuka, A. Sakai, and S. Zaima

Appl. Phys. Lett. 83, 1005 (2003); http://dx.doi.org/10.1063/1.1595714 (3 pages) | Cited 138 times

Online Publication Date: 30 July 2003

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High-resolution x-ray photoelectron spectroscopy (XPS) at 6 keV photon energy has been realized utilizing high-flux-density x rays from the third generation high-energy synchrotron radiation facility, SPring-8. The method has been applied to analysis of high-k HfO2/interlayer/Si complementary metal–oxide–semiconductor gate-dielectric structures. With the high energy resolution and high throughput of our system, chemical-state differences were observed in the Si 1s, Hf 3d, and O 1s peaks for as-deposited and annealed samples. The results revealed that a SiOxNy interlayer is more effective in controlling the interface structure than SiO2. Our results show the wide applicability of high resolution XPS with hard x rays from a synchrotron source. © 2003 American Institute of Physics.
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79.60.Jv Interfaces; heterostructures; nanostructures
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.Cc Kinetics of defect formation and annealing
68.35.Ct Interface structure and roughness

Temperature-mediated switching of magnetoresistance in Co-contacted multiwall carbon nanotubes

S. Chakraborty, K. M. Walsh, B. W. Alphenaar, Lei Liu, and K. Tsukagoshi

Appl. Phys. Lett. 83, 1008 (2003); http://dx.doi.org/10.1063/1.1597965 (3 pages) | Cited 11 times

Online Publication Date: 30 July 2003

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We present temperature-dependent measurements of the magnetoresistance in ferromagnetically contacted multiwall nanotubes. At low temperature, the resistance increases sharply near zero-field due to misalignment of the contact magnetizations. As temperature increases, the resistance peak transforms into a resistance dip, with a peak-to-valley ratio of similar magnitude, but opposite sign. The resistance switch has a distinct temperature dependence compared with the background magnetoresistance, suggesting that the two have different origins. We propose that a ferromagnetic transition near the contact interfaces reverses the polarity of the injected spin, and changes the sign of the resistance switch. © 2003 American Institute of Physics.
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73.63.Fg Nanotubes
72.25.Mk Spin transport through interfaces
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

Direct observation of confined states in metallic single-walled carbon nanotubes

Theophilos Maltezopoulos, André Kubetzka, Markus Morgenstern, Roland Wiesendanger, Serge G. Lemay, and Cees Dekker

Appl. Phys. Lett. 83, 1011 (2003); http://dx.doi.org/10.1063/1.1598282 (3 pages) | Cited 19 times

Online Publication Date: 30 July 2003

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We investigated the local density of states (LDOS) of extended individual metallic single-walled carbon nanotubes using low-temperature scanning tunneling spectroscopy. We observed that the LDOS oscillates with energy close to the Fermi level. The oscillation period of about 50 meV varies with position on the nanotube. Maps of the LDOS reveal that the peaks in the oscillation are related to confined states. The widths of the peaks increase with increasing distance from the Fermi level. © 2003 American Institute of Physics.
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73.22.Dj Single particle states

Size-dependent charge storage in amorphous silicon quantum dots embedded in silicon nitride

Nae-Man Park, Sang-Hun Jeon, Hyun-Deok Yang, Hyunsang Hwang, Seong-Ju Park, and Suk-Ho Choi

Appl. Phys. Lett. 83, 1014 (2003); http://dx.doi.org/10.1063/1.1596371 (3 pages) | Cited 23 times

Online Publication Date: 30 July 2003

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Size-dependent charge storage was observed in metal–insulator–semiconductor structures containing amorphous Si quantum dots (a-Si QDs) grown by plasma-enhanced chemical vapor deposition. For a-Si QDs as large as 2 nm in diameter, one electron or one hole was stored in each a-Si QD. For small-sized a-Si QDs of 1.4 nm in diameter, however, the width of capacitance–voltage hysteresis was decreased, indicating that the charge density in the a-Si QDs was reduced. This can be attributed to the lowered tunneling barrier in the small-sized a-Si QDs resulting from a large quantum confinement effect. Long-term charge storage was observed in the fully charged a-Si QDs; this is attributed to a suppression of the discharge process by electrostatic repulsion among the charged dots. © 2003 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.65.Hb Quantum dots (patterned in quantum wells)

Quantum-well microtube constructed from a freestanding thin quantum-well layer

M. Hosoda, Y. Kishimoto, M. Sato, S. Nashima, K. Kubota, S. Saravanan, P. O. Vaccaro, T. Aida, and N. Ohtani

Appl. Phys. Lett. 83, 1017 (2003); http://dx.doi.org/10.1063/1.1599621 (3 pages) | Cited 16 times

Online Publication Date: 30 July 2003

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We fabricated and experimentally investigated a nanostructure known as a quantum-well (QW) microtube, which is a fine tube with a micron- or nanometer-order diameter fabricated by rolling a semiconductor GaAs QW. Although the wall thickness is only 40 nm, the system retains the quantum properties of a QW, and photoluminescence from the QW subband can be clearly observed. Even though the QW width is sufficiently small to make the QW subband type-II band-aligned, a type-II to type-I transition caused by uniaxial strain in the microtube allows for optical emission. © 2003 American Institute of Physics.
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81.07.St Quantum wells
68.65.Fg Quantum wells
78.67.De Quantum wells
78.55.Cr III-V semiconductors
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