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11 Aug 2003

Volume 83, Issue 6, pp. 1063-1275

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 1163 (2003); http://dx.doi.org/10.1063/1.1599972 (3 pages)

M. C. Rogge, C. Fühner, U. F. Keyser, R. J. Haug, M. Bichler, G. Abstreiter, and W. Wegscheider
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Organic field-effect transistors by a wet-transferring method

Yong-Young Noh, Jang-Joo Kim, Kiyoshi Yase, and Shuichi Nagamatsu

Appl. Phys. Lett. 83, 1243 (2003); http://dx.doi.org/10.1063/1.1600518 (3 pages) | Cited 16 times

Online Publication Date: 5 August 2003

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Organic field-effect transistors (OFETs) were prepared from an epitaxially grown film fabricated by a wet-transferring process. 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) was grown by thermal evaporation on the (001) surface of potassium bromide (KBr) single crystals. When the film was grown at room temperature, the planar molecules were aligned orthogonally on the crystal surfaces along the [110] direction with edge-on orientation to the surface normal direction. The epitaxy film was transferred to on SiO2/Si surface immediately after removing the KBr on the water surface to product the OFETs. The calculated μFET of the OFET for the wet-transferred vertically aligned film were 1.3×10−4 and 2.2×10−4 cm2 V−1 s−1 at the linear and saturation regions, respectively, at Vg = −50 V at an ION/IOFF (on/off ratios of source–drain current) of 104 ∼ 105. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials

Effect of dye doping on the charge carrier balance in PPV light emitting diodes as measured by admittance spectroscopy

I. N. Hulea, R. F. J. van der Scheer, H. B. Brom, Bea M. W. Langeveld-Voss, A. van Dijken, and K. Brunner

Appl. Phys. Lett. 83, 1246 (2003); http://dx.doi.org/10.1063/1.1600850 (3 pages) | Cited 23 times

Online Publication Date: 5 August 2003

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Dye doping is a promising way to increase the spectral purity of polymer light-emitting diodes (LEDs). Here we analyze the frequency and field dependence of the complex admittance of Al–Ba–PPV–poly(3,4-ethylenedioxythiophene:polystyrene sulphonic acid)–indium tin oxide LEDs with and without dye. We compare the charge carrier mobilities of pristine and dye-doped double-carrier and hole-only (Au replacing Al–Ba) devices. Dye doping is shown to significantly influence the electron mobilities while the hole mobilities are left unchanged and thereby changing the carrier balance in a double carrier device towards that of a hole only device. The minimum in the LED capacitance as a function of voltage appears to be an excellent probe for the electron trapping phenomenon underlying the reduction of the mobility. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.70.Jk Polymers and organics
73.50.Dn Low-field transport and mobility; piezoresistance

Enhanced frequency response associated with negative photoconductance in an InGaAs/InAlAs avalanche photodetector

Gyungock Kim, In Gyoo Kim, Jong Hyeob Baek, and O. Kyun Kwon

Appl. Phys. Lett. 83, 1249 (2003); http://dx.doi.org/10.1063/1.1600512 (3 pages) | Cited 17 times

Online Publication Date: 5 August 2003

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We report an InAlAs/InGaAs avalanche photodetector with the photocurrent–voltage characteristic exhibiting a negative conductance region. The frequency response of a device exhibits the internal rf-gain effect in the avalanche region, and the gain peak occurs at progressively higher frequencies as the applied voltage increases. The pulse response experiment in the time domain characterizes the formation process of the space-charge wave signal near the threshold voltage in the avalanche region. The experimental result, displaying a multivalued bandwidth curve with respect to the current-gain, shows that the avalanche process does not limit the speed of the avalanche photodetector, in contrast to the conventional one. © 2003 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Bt Optoelectronic device characterization, design, and modeling
72.40.+w Photoconduction and photovoltaic effects
72.20.Ht High-field and nonlinear effects
85.30.De Semiconductor-device characterization, design, and modeling

Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum codeposition

Takahito Oyamada, Haruo Tanaka, Kazumi Matsushige, Hiroyuki Sasabe, and Chihaya Adachi

Appl. Phys. Lett. 83, 1252 (2003); http://dx.doi.org/10.1063/1.1600848 (3 pages) | Cited 99 times

Online Publication Date: 5 August 2003

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We demonstrate the operation of an organic switching device using a uniform poly-crystalline Cu:7, 7, 8, 8-Tetracyanoquinodimethane (TCNQ) charge transfer (CT)-complex thin film that is prepared by vacuum vapor codeposition. Characteristic CT-absorption at λ=600–1200 nm was observed in the complex film in the UV-visible spectrum and the cyano stretching peak in the IR spectrum shifted to a higher (more than 29 cm−1) wave number than that of a pristine TCNQ film, suggesting the formation of a CT-complex in the evaporated thin film. Reproducible electrical switching characteristics were observed in the indium tin oxide/Al/(Al2O3)/Cu:TCNQ/Al structure. The device exhibited a clear threshold from low impedance to high impedance at an applied voltage of 10.0±2.0 V and a reverse phenomenon at a negative bias of −9.5±2.0 V. In this study, we demonstrate that a thin Al2O3 layer between the aluminum (Al) anode and Cu:TCNQ layers creates reproducible switching. © 2003 American Institute of Physics.
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72.60.+g Mixed conductivity and conductivity transitions
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.66.Qn Polymers; organic compounds
73.61.Ph Polymers; organic compounds

Combinatorial libraries of semiconductor gas sensors as inorganic electronic noses

M. A. Aronova, K. S. Chang, I. Takeuchi, H. Jabs, D. Westerheim, A. Gonzalez-Martin, J. Kim, and B. Lewis

Appl. Phys. Lett. 83, 1255 (2003); http://dx.doi.org/10.1063/1.1600822 (3 pages) | Cited 20 times

Online Publication Date: 5 August 2003

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We have fabricated thin-film combinatorial gas sensor libraries based on doped semiconducting SnO2 thin films. Combinatorial pulsed-laser ablation was used to deposit compositionally varying arrays of sensor elements onto a prepatterned device electrode configuration. Using multiplexing electronics, we have demonstrated the detection of chloroform, formaldehyde, and benzene gases at concentrations down to 12.5 ppm through pattern recognition of signals from the arrays of sensors. This technique of fabricating gas sensor arrays as combinatorial libraries can be applied to the manufacturing of portable electronic noses. © 2003 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
81.15.Fg Pulsed laser ablation deposition

Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure

Arnold Alguno, Noritaka Usami, Toru Ujihara, Kozo Fujiwara, Gen Sazaki, Kazuo Nakajima, and Yasuhiro Shiraki

Appl. Phys. Lett. 83, 1258 (2003); http://dx.doi.org/10.1063/1.1600838 (3 pages) | Cited 32 times

Online Publication Date: 5 August 2003

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We report on the performance of solar cells with stacked self-assembled Ge dots in the intrinsic region of Si-based p-i-n diode. These dots were epitaxially grown on p-type Si(100) substrate via the Stranski–Krastanov growth mode by gas-source molecular beam epitaxy. Enhanced external quantum efficiency (EQE) in the infrared region up to 1.45 μm was observed for the solar cells with stacked self-assembled Ge dots compared with that without Ge dots. Furthermore, the EQE was found to increase with increasing number of stacking. These results show that electron-hole pairs generated in Ge dots can be efficiently separated by the internal electric field, and can contribute to the photocurrent without considerable recombination in Ge dots or at Ge/Si interfaces. © 2003 American Institute of Physics.
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84.60.Jt Photoelectric conversion
81.07.Ta Quantum dots
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.30.De Semiconductor-device characterization, design, and modeling
73.63.Kv Quantum dots
85.60.Dw Photodiodes; phototransistors; photoresistors
73.50.Pz Photoconduction and photovoltaic effects
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