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11 Aug 2003

Volume 83, Issue 6, pp. 1063-1275

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 1163 (2003); http://dx.doi.org/10.1063/1.1599972 (3 pages)

M. C. Rogge, C. Fühner, U. F. Keyser, R. J. Haug, M. Bichler, G. Abstreiter, and W. Wegscheider
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Analysis of ultrathin SiO2 interface layers in chemical vapor deposition of Al2O3 on Si by in situ scanning transmission electron microscopy

R. F. Klie, N. D. Browning, A. Roy Chowdhuri, and C. G. Takoudis

Appl. Phys. Lett. 83, 1187 (2003); http://dx.doi.org/10.1063/1.1597415 (3 pages) | Cited 12 times

Online Publication Date: 5 August 2003

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The development of Al2O3 as an alternative gate dielectric for microelectronic applications depends on the ability to grow a high-quality nanoscale thin film that forms an atomically abrupt interface with Si. Here, the combination of in situ Z-contrast imaging, electron energy loss spectroscopy and x-ray photoelectron spectroscopy of amorphous Al2O3 films grown by metalorganic chemical vapor deposition shows that excess oxygen incorporated into the film routinely reacts with the Si substrate to form an amorphous SiO2 interface layer during postdeposition annealing. The intrinsic oxygen-rich environment of all films grown by such techniques and the necessity of postdeposition processing in device applications implies that control and optimization of the SiO2 interface layers could be of utmost interest for high-κ dielectric stacked structures. © 2003 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Nq Composition and phase identification
68.37.Lp Transmission electron microscopy (TEM)
61.72.Cc Kinetics of defect formation and annealing

Electrostrictive behavior of poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene)

J. T. Garrett, C. M Roland, A. Petchsuk, and T. C. Chung

Appl. Phys. Lett. 83, 1190 (2003); http://dx.doi.org/10.1063/1.1600515 (3 pages) | Cited 9 times

Online Publication Date: 5 August 2003

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The mechanism underlying the large electric-field-induced strains in terpolymers of vinylidene fluoride, trifluoroethylene, and chlorotrifluoroethylene was investigated. The electrostrictive strain increased by an order of magnitude with increasing temperature, up to the Curie transition, and was essentially invariant to temperature thereafter. Infrared absorption spectra, obtained as a function of both temperature and electric field strength, revealed no change in the crystal phase structure for electric fields sufficient to induce longitudinal strains of ∼ 1%. Thus, the electrostriction observed herein is not due to crystal phase conversion. The Maxwell strain was also negligible under all conditions, because of the terpolymer’s high mechanical modulus (10 to 100 MPa). The mechanical properties exhibit an anomalous change in behavior near the Curie transition, whose origin is unclear. © 2003 American Institute of Physics.
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77.65.Bn Piezoelectric and electrostrictive constants
78.30.Jw Organic compounds, polymers
62.20.D- Elasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations
61.41.+e Polymers, elastomers, and plastics

The enhanced and optimal piezoelectric coefficients in single crystalline barium titanate with engineered domain configurations

Dan Liu and JiangYu Li

Appl. Phys. Lett. 83, 1193 (2003); http://dx.doi.org/10.1063/1.1600517 (3 pages) | Cited 23 times

Online Publication Date: 5 August 2003

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In this letter, we report a micromechanical analysis to explain the enhanced piezoelectric coefficients in ferroelectric single crystals poled along a nonpolar axis, where the coexistence of several variants leads to a complicated domain configuration. The engineered domain configuration in the crystal is constructed first using energy minimization approach, and the effective moduli of single crystal with engineered domain configuration is then determined using homogenization theory. Following this procedure, we calculate the effective electromechanical moduli of tetragonal barium titanate poled along [111] direction, where the piezoelectric coefficient d33 is found to be 70% higher than those poled along [001], consistent with experimental observation. Piezoelectric coefficient d32 is also found to be 114% higher. In addition, we notice that poling along [111] direction does not lead to the optimal domain configuration, since barium titanate poled along [110] direction has much higher d32 and d33. The analysis reveals that much higher electromechanical coupling can be obtained in ferroelectric crystals with engineered domain configurations, and offers insight on the design and optimization of ferroelectrics for enhanced functional properties. © 2003 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.65.Bn Piezoelectric and electrostrictive constants
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
62.20.D- Elasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations

Polarization dynamics over broad time and field domains in modified ferroelectrics

Christelle Jullian, J. F. Li, and D. Viehland

Appl. Phys. Lett. 83, 1196 (2003); http://dx.doi.org/10.1063/1.1600823 (3 pages) | Cited 9 times

Online Publication Date: 5 August 2003

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The dynamics of polarization switching have been investigated over extremely broad time (10−8<t<102 s) and field ranges for various modified Pb-based perovskite ferroelectrics. The results unambiguously demonstrate the presence of extremely broad relaxation time distributions for switching, which can extend over decade(s) in orders of magnitude in time. © 2003 American Institute of Physics.
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77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization
77.22.Gm Dielectric loss and relaxation
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
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