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11 Aug 2003

Volume 83, Issue 6, pp. 1063-1275

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Appl. Phys. Lett. 83, 1163 (2003); http://dx.doi.org/10.1063/1.1599972 (3 pages)

M. C. Rogge, C. Fühner, U. F. Keyser, R. J. Haug, M. Bichler, G. Abstreiter, and W. Wegscheider
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Tuning of the intersubband emission below the longitudinal optical phonon energy in GaAs/AlGaAs quantum cascade emitters

S. S. Dhillon, A. G. Davies, H. E. Beere, E. H. Linfield, D. A. Ritchie, and D. D. Arnone

Appl. Phys. Lett. 83, 1063 (2003); http://dx.doi.org/10.1063/1.1597985 (3 pages)

Online Publication Date: 5 August 2003

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We present a study of far-infrared intersubband electroluminescence from a number of GaAs–Al0.15Ga0.85As quantum-cascade emitters with emission energies below the LO phonon energy. A range of samples with emission energies between 13 and 21 meV were investigated. A systematic decrease in the normalized emission intensity with increasing intersubband separation was observed. The possible mechanisms such as the grating coupling efficiency and the role of scattering processes are discussed. © 2003 American Institute of Physics.
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78.60.Fi Electroluminescence
78.67.De Quantum wells

Spectral narrowing in a perylene dye

A. K. Dharmadhikari, M. Thakur, L. Wang, and V. Cammarata

Appl. Phys. Lett. 83, 1066 (2003); http://dx.doi.org/10.1063/1.1598648 (2 pages)

Online Publication Date: 5 August 2003

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Spectral narrowing has been observed in the solution of a recently synthesized perylene dye for pumping by the second harmonic of a picosecond Nd:yttrium–aluminum–garnet laser. The threshold energy for spectral narrowing at a concentration of 2×10−3 M was observed to be 1.8 μJ for an excitation area of 5 mm2. Spectrally narrowed emission with a linewidth of 5 nm centered at 600 nm was observed without incorporating any mirrors. The maximum photoluminescence quantum efficiency was 23% while the conversion efficiency in the laserlike emission was found to be 20%. A combination of stimulated and cooperative emission with a dominant contribution of the stimulated emission is attributed to the observed line narrowing and laserlike emission. © 2003 American Institute of Physics.
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78.55.Kz Solid organic materials
78.45.+h Stimulated emission
78.47.-p Spectroscopy of solid state dynamics

Excitation fluence dependence of terahertz radiation mechanism from femtosecond-laser-irradiated InAs under magnetic field

Hiroshi Takahashi, Alex Quema, Ryoichiro Yoshioka, Shingo Ono, and Nobuhiko Sarukura

Appl. Phys. Lett. 83, 1068 (2003); http://dx.doi.org/10.1063/1.1600842 (3 pages) | Cited 12 times

Online Publication Date: 5 August 2003

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The excitation fluence and magnetic field dependence of terahertz (THz) radiation power from InAs is investigated. At low excitation fluence, an enhancement of the THz-radiation power is observed independent of the magnetic-field direction. As the excitation fluence is increased, a crossover of the terahertz radiation mechanism is observed. At excitation fluence above this crossover, the radiation power is either enhanced or reduced depending on the magnetic-field direction. These results are explained by considering the different THz-radiation mechanisms from the InAs surface with or without photoexcited carrier screening. © 2003 American Institute of Physics.
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78.47.-p Spectroscopy of solid state dynamics
78.20.Ls Magneto-optical effects

Generation of coherent terahertz radiation with multifrequency modes in a Fibonacci optical superlattice

Yi-qiang Qin, Hong Su, and Sing-hai Tang

Appl. Phys. Lett. 83, 1071 (2003); http://dx.doi.org/10.1063/1.1598644 (3 pages) | Cited 16 times

Online Publication Date: 5 August 2003

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We investigate theoretically the generation of coherent narrow-band terahertz (THz) radiation with multifrequency modes in an optical superlattice produced by quasiperiodically poled ferroelectric crystal. The superlattice consists of two building blocks A and B, in which each containing a pair of antiparallel 180° ferroelectric domains, arranged as a Fibonacci sequence. Second-order nonlinear optical rectification of femtosecond pulses gives rise to a THz wave form whose multifrequency modes are determined by the quasiperiodic structure properties. The relationship between multifrequency modes terahertz generation and Fibonacci structure parameters is also analyzed and studied. © 2003 American Institute of Physics.
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78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources
42.72.Ai Infrared sources
77.80.Dj Domain structure; hysteresis
42.79.Wc Optical coatings
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Design of a channel drop filter in a two-dimensional triangular photonic crystal

Min Qiu and Bozena Jaskorzynska

Appl. Phys. Lett. 83, 1074 (2003); http://dx.doi.org/10.1063/1.1599982 (3 pages) | Cited 45 times

Online Publication Date: 5 August 2003

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A design of a channel drop filter in a two-dimensional photonic crystal with a triangular lattice of air holes is presented. The requirement of the accidental degeneracy of the frequency is achieved by tuning the radii of the air holes in the cavity system. In contrast to the other designs proposed, the present one does not involve either inclusion of additional materials or an extra small feature size. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.79.Ci Filters, zone plates, and polarizers

Second-harmonic generation in periodically poled GaN

Aref Chowdhury, Hock M. Ng, Manish Bhardwaj, and Nils G. Weimann

Appl. Phys. Lett. 83, 1077 (2003); http://dx.doi.org/10.1063/1.1599044 (3 pages) | Cited 40 times

Online Publication Date: 5 August 2003

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We report the experimental demonstration of second-harmonic generation in periodically poled GaN by first-order quasiphase matching. The periodically poled structure was grown by plasma-assisted molecular-beam epitaxy. We observed about 9 μW of second-harmonic power from a fundamental input laser wavelength of 1658.6 nm with a normalized conversion efficiency of 12.76% W−1 cm−2. The ability to perform nonlinear wavelength conversion by periodic poling and the fact that GaN has a very wide window of transparency, pave the way for GaN to be used for nonlinear optical devices in telecommunications as well as a nonlinear light source for biochemical detection in the far infrared and deep ultraviolet. © 2003 American Institute of Physics.
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78.66.Fd III-V semiconductors
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Interferometric inscription of surface relief gratings on optical fiber using azo polymer film

S. Choi, K. R. Kim, K. Oh, C. M. Chun, M. J. Kim, S. J. Yoo, and D. Y. Kim

Appl. Phys. Lett. 83, 1080 (2003); http://dx.doi.org/10.1063/1.1599041 (3 pages) | Cited 11 times

Online Publication Date: 5 August 2003

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We report the fabrication and characteristics of surface relief grating on the end surface of silica optical fiber with a diameter of 125 μm. One- and two-dimensional gratings were inscribed on the fiber surface covered with azo polymer thin-film layer using interferometric methods. Diffraction beam patterns of the zeroth and the first order due to surface relief gratings were observed using a 635 nm laser, and the relation between the measured diffraction beam pattern and the grating period was also investigated. © 2003 American Institute of Physics.
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42.79.Dj Gratings
42.81.Wg Other fiber-optical devices
42.82.Cr Fabrication techniques; lithography, pattern transfer

Improvements in near-field optical performance using localized surface plasmon excitation by a scatterer-formed aperture

Kenji Tanaka, Hiroshi Hosaka, Kiyoshi Itao, Manabu Oumi, Takashi Niwa, Tatsuya Miyatani, Yasuyuki Mitsuoka, Kunio Nakajima, and Toshifumi Ohkubo

Appl. Phys. Lett. 83, 1083 (2003); http://dx.doi.org/10.1063/1.1600834 (3 pages) | Cited 7 times

Online Publication Date: 5 August 2003

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Near-field optical performance is greatly improved using our proposed near-field structure, in which a metal scatterer formed in an aperture enhances localized surface plasmon (LSP) excitation and functions as an alternative near-field light source. Based on the design through a finite-difference time-domain method, the scatterer-formed aperture is fabricated with an electron beam technique, and its near-field optical distribution is observed using a scanning near-field optical microscope. The scatterer-formed aperture enhances the near-field optical energy due to LSP excitation, thereby realizing a significant and simultaneous improvement in throughput and spatial resolution. © 2003 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
02.70.Bf Finite-difference methods

Quasiphase matched second-harmonic generation from periodic optical randomization of poled polymer channel waveguides

G. Martin, S. Ducci, R. Hierle, D. Josse, and J. Zyss

Appl. Phys. Lett. 83, 1086 (2003); http://dx.doi.org/10.1063/1.1597748 (3 pages) | Cited 13 times

Online Publication Date: 5 August 2003

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We present experimental evidence of quasiphase-matched second harmonic generation in a polymer channel waveguide consisting of disperse red one (DR1) grafted to a poly(methylmethacrylate) (PMMA) main chain polymer at 30% molecular weight concentration. The ability of DR1 to photoisomerize is used to define a periodic segment of linear and nonlinear domains along the waveguide by photodepoling through a photolithographic mask of 10 μm periodicity, following quasiphase-matching requirements. A broad spectral scan between 1450 and 1800 nm evidences a peaked enhancement of second harmonic generation at 1536 nm, with experimental efficiency of 0.023% W−1, further compared to theoretical values. Wavelength dispersion of the quasiphase matched second harmonic peak as well as the penetration depth of the photodepoling beam in DR1 PMMA are also discussed. © 2003 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Jk Polymers and organics
42.65.Wi Nonlinear waveguides
42.79.Gn Optical waveguides and couplers

One-dimensional photonic crystals in reflection geometry for optical applications

R. L. Nelson and J. W. Haus

Appl. Phys. Lett. 83, 1089 (2003); http://dx.doi.org/10.1063/1.1600841 (3 pages) | Cited 10 times

Online Publication Date: 5 August 2003

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We investigate some properties of one-dimensional photonic band-gap materials that have the possibility of total internal reflection at one or more interfaces. The proposed structures have application for electro-optic modulation, sensing, and other optical devices. A specific example for electro-optic modulation is presented. Certain advantages of this arrangement may make it a desired geometry for specific applications like sensing. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.25.Gy Edge and boundary effects; reflection and refraction
42.79.Hp Optical processors, correlators, and modulators

Effect of Kerr nonlinearity on defect lasing modes in weakly disordered photonic crystals

B. Liu, A. Yamilov, and H. Cao

Appl. Phys. Lett. 83, 1092 (2003); http://dx.doi.org/10.1063/1.1598286 (3 pages) | Cited 4 times

Online Publication Date: 5 August 2003

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We studied the effect of Kerr nonlinearity on lasing in defect modes of weakly disordered photonic crystals. Our time-independent calculation based on self-consistent nonlinear transfer matrix method shows that Kerr nonlinearity modifies both frequencies and quality factors of defect modes. We also used a time-dependent algorithm to investigate the dynamic nonlinear effect. Under continuous pumping, the spatial sizes and intensities of defect lasing modes are changed by Kerr nonlinearity. Such changes are sensitive to the nonlinear response time. © 2003 American Institute of Physics.
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42.55.Tv Photonic crystal lasers and coherent effects
42.55.Ah General laser theory
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Qs Photonic bandgap materials
42.55.Rz Doped-insulator lasers and other solid state lasers

In-plane resonant cavities with photonic crystal boundaries etched in InP-based heterostructure

M. Mulot, M. Qiu, M. Swillo, B. Jaskorzynska, S. Anand, and A. Talneau

Appl. Phys. Lett. 83, 1095 (2003); http://dx.doi.org/10.1063/1.1594824 (3 pages) | Cited 18 times

Online Publication Date: 5 August 2003

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The optical properties of in-plane cavities with photonic crystal boundaries fabricated into an InP/GaInAsP/InP slab waveguide structure are presented. The investigated cavities are realized as segments of different lengths bounded by V-shaped double or single mirrors in straight photonic crystal waveguides and were designed to have resonance in the 1.55 μm wavelength range. High aspect ratio etching of the photonic crystal is achieved using Ar/Cl2-based chemically assisted ion beam etching. The optical loss inside the photonic crystal waveguide was determined by fitting the measured transmission spectra with two-dimensional finite-difference time-domain simulations. The experimental results, combined with the simulations, indicate that major sources of loss in these cavities are radiation through the cavity mirrors and out-of-plane scattering of the third-order mode inside of the cavity. The best results were obtained for a 6.2 μm long resonant cavity with double mirrors that had an appreciably high-quality factor of 460. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.82.Et Waveguides, couplers, and arrays
42.79.Bh Lenses, prisms and mirrors
81.65.Cf Surface cleaning, etching, patterning

Self-pulsation in InGaN laser diodes with saturable absorber layers

T. Ohno, S. Ito, T. Kawakami, and M. Taneya

Appl. Phys. Lett. 83, 1098 (2003); http://dx.doi.org/10.1063/1.1599622 (3 pages) | Cited 12 times

Online Publication Date: 5 August 2003

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Self-pulsating InGaN laser diodes with a p-type InGaN saturable absorber (SA) layer are demonstrated. The SA layer consists of a 1-nm-thick p-type InGaN well surrounded by 2-nm-thick p-type In0.02Ga0.98N barriers. The lower barrier of the SA is located on the 18-nm-thick p-type Al0.3Ga0.7N evaporation-prevention layer of the active region. Self-pulsation is demonstrated for output powers in the range 4 to 22 mW with corresponding self-pulsation frequencies in the range 1.6 to 2.9 GHz. Results indicate that the position of the SA layer in the structure has a strong influence on the carrier lifetime and is responsible for the observation of self-pulsation in these devices. © 2003 American Institute of Physics.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.67.De Quantum wells

Yb3+:Sc2O3 ceramic laser

J. Lu, J. F. Bisson, K. Takaichi, T. Uematsu, A. Shirakawa, M. Musha, K. Ueda, H. Yagi, T. Yanagitani, and A. A. Kaminskii

Appl. Phys. Lett. 83, 1101 (2003); http://dx.doi.org/10.1063/1.1600851 (3 pages) | Cited 42 times

Online Publication Date: 5 August 2003

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A solid-state laser material based on highly transparent Yb3+-doped scandia (Sc2O3) ceramic was developed using nanocrystalline technology and the nonpress vacuum sintering method. Continuous wave laser oscillations were obtained at around 1041 and 1094 nm using a 2.5 at. % Yb3+:Sc2O3 ceramic plate. Broadband lasing spectra were observed. © 2003 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.70.Hj Laser materials
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

Scaling laws of voxels in two-photon photopolymerization nanofabrication

Hong-Bo Sun, Kenji Takada, Moon-Soo Kim, Kwang-Sup Lee, and Satoshi Kawata

Appl. Phys. Lett. 83, 1104 (2003); http://dx.doi.org/10.1063/1.1599968 (3 pages) | Cited 62 times

Online Publication Date: 5 August 2003

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Understanding the performance of individual voxels is critical to establish two-photon photopolymerization as a nanoprocessing tool. In this letter, we report that at near-threshold exposure condition voxel shape scaling follows different laws in the courses of varying laser power and changing exposure duration. The voxel aspect ratio, when exposure enhanced, monotonically increases and reaches a saturation status for the two processes that are conventionally regarded as equivalent for voxel volume tuning. A growth model that deals with fine photopolymerization process occurring at the submicron-focal volume is proposed and applied to interpret the unexpected phenomenon. © 2003 American Institute of Physics.
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81.16.Be Chemical synthesis methods
81.07.-b Nanoscale materials and structures: fabrication and characterization
82.35.-x Polymers: properties; reactions; polymerization

Highly strained 1.24-μm InGaAs/GaAs quantum-well lasers

L. W. Sung and H. H. Lin

Appl. Phys. Lett. 83, 1107 (2003); http://dx.doi.org/10.1063/1.1600504 (3 pages) | Cited 21 times

Online Publication Date: 5 August 2003

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Highly strained InGaAs/GaAs quantum wells grown at very low temperature (380 °C) have been studied. The critical thickness of the In0.38Ga0.62As quantum well is 8.8 nm and the photoluminescence peak is at 1.24 μm. An edge-emitting In0.388Ga0.612As/GaAs quantum-well laser demonstrates an emission wavelength of 1.244 μm at 18 °C. The threshold current density is 405 A/cm2 for an as-cleaved diode laser with 873-μm cavity length. The internal quantum efficiency and laser cavity loss are 93% and 6.4 cm−1, respectively. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.67.De Quantum wells
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.55.Cr III-V semiconductors

Dynamical behavior of a bistable chiral quasihomeotropic liquid crystal cell

Chih-Yung Hsieh and Shu-Hsia Chen

Appl. Phys. Lett. 83, 1110 (2003); http://dx.doi.org/10.1063/1.1600506 (3 pages) | Cited 3 times

Online Publication Date: 5 August 2003

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The dynamical behavior of the directors in a bistable chiral quasihomeotropic (BCQH) liquid crystal cell has been investigated. This cell can be switched from the initial quasihomeotropic configuration state at zero field to two static twisted states at 14 V by different switching processes. We studied the dynamic behavior of the BCQH cell based on the general nematohydrodynamic theory, and the detailed dynamical mechanism was illustrated by analyzing the director and velocity profiles obtained from the numerical simulation. We found that, in addition to the flow effect, the asymmetric polar-alignment condition is another important factor to achieve the switching bistability of our BCQH cell. The experimental and numerical results are reported in this letter. © 2003 American Institute of Physics.
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42.70.Df Liquid crystals
42.79.Kr Display devices, liquid-crystal devices
61.30.-v Liquid crystals

Broadband photon-number squeezing in light-emitting diodes at low photon-flux levels

R. Masuyama, A. Higashi, K. Tanaka, Y. Kadoya, and M. Yamanishi

Appl. Phys. Lett. 83, 1113 (2003); http://dx.doi.org/10.1063/1.1601304 (3 pages)

Online Publication Date: 5 August 2003

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We have investigated the squeezing of intensity-fluctuation below the full-shot-noise level in light-emitting diodes (LEDs) at low-photon flux levels. By using a tailor-made LED, the squeezing over a wide frequency range, near-dc to 1.5 GHz was achieved at an injection-current level as low as 100 μA. As a result, the number of photons, which can be expected in the sub-Poissonian light, was reduced to the order of 105 per pulse, nearly three orders of magnitude smaller than those obtained in commercial LEDs. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.50.Dv Quantum state engineering and measurements

Photorefractive lithography with synchrotron light in poly(methyl methacrylate)

B. Andreas, K. Peithmann, E. Soergel, and K. Buse

Appl. Phys. Lett. 83, 1116 (2003); http://dx.doi.org/10.1063/1.1600507 (3 pages) | Cited 3 times

Online Publication Date: 5 August 2003

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Synchrotron light changes the refractive index of poly(methyl methacrylate) (PMMA). Refractive-index enhancements as well as reductions depending on dose and energy of the radiation used can be observed. This effect allows the manufacturing of, for example integrated-optical components, as is demonstrated by realization of waveguides in PMMA. © 2003 American Institute of Physics.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.82.Et Waveguides, couplers, and arrays
42.70.Jk Polymers and organics
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