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11 Aug 2003

Volume 83, Issue 6, pp. 1063-1275

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 1163 (2003); http://dx.doi.org/10.1063/1.1599972 (3 pages)

M. C. Rogge, C. Fühner, U. F. Keyser, R. J. Haug, M. Bichler, G. Abstreiter, and W. Wegscheider
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Magnetron-type radio-frequency plasma control yielding vertically well-aligned carbon nanotube growth

T. Hirata, N. Satake, G.-H. Jeong, T. Kato, R. Hatakeyama, K. Motomiya, and K. Tohji

Appl. Phys. Lett. 83, 1119 (2003); http://dx.doi.org/10.1063/1.1601303 (3 pages) | Cited 27 times

Online Publication Date: 5 August 2003

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In order to understand the effects of plasma parameters on the nanotube formation and further controlled growth, we have investigated the optimal growth condition using a rf plasma-enhanced chemical vapor deposition method. The magnetic field introduced for a magnetron discharge enhances the nanotube growth as a result of the plasma-density increment and the self-bias reduction of a rf electrode. It is also found that the optimum ion flux and ion bombardment energy is a key parameter for the uniform, well-aligned, and density-controlled nanotube growth. © 2003 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.46.-w Structure of nanoscale materials
81.07.De Nanotubes
52.77.Dq Plasma-based ion implantation and deposition
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