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18 Aug 2003

Volume 83, Issue 7, pp. 1283-1488

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 1462 (2003); http://dx.doi.org/10.1063/1.1601693 (3 pages)

X. Cartoixà, D. Z.-Y. Ting, and Y.-C. Chang
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Omnidirectional and compact guided light extraction from Archimedean photonic lattices

M. Rattier, H. Benisty, E. Schwoob, C. Weisbuch, T. F. Krauss, C. J. M. Smith, R. Houdré, and U. Oesterle

Appl. Phys. Lett. 83, 1283 (2003); http://dx.doi.org/10.1063/1.1600831 (3 pages) | Cited 37 times

Online Publication Date: 12 August 2003

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We address the issue of extracting light from a waveguide towards air in a compact way for randomly oriented guided waves. The goal is to enhance the extraction efficiency of light-emitting diodes while retaining planar processing. For incidence-angle-independent extraction, preferred lattice designs appear to possess a ring-shaped Fourier transform. We demonstrate this property for an Archimedean lattice. This system is the outer part of a resonant-cavity light-emitting diode. Data suggest that ∼40% extraction efficiency is at hand in a planar top-emitting device retaining its substrate. © 2003 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
85.60.Jb Light-emitting devices
42.50.-p Quantum optics
42.70.Qs Photonic bandgap materials
42.82.-m Integrated optics
42.30.Kq Fourier optics

Monolithically series-interconnected GaInAsSb/AlGaAsSb/GaSb thermophotovoltaic devices with an internal backsurface reflector formed by wafer bonding

C. A. Wang, R. K. Huang, D. A. Shiau, M. K. Connors, P. G. Murphy, P. W. O’Brien, A. C. Anderson, D. M. DePoy, G. Nichols, and M. N. Palmisiano

Appl. Phys. Lett. 83, 1286 (2003); http://dx.doi.org/10.1063/1.1602165 (3 pages) | Cited 12 times

Online Publication Date: 12 August 2003

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GaInAsSb/AlGaAsSb/GaSb thermophotovoltaic (TPV) cells were monolithically interconnected in series to build open-circuit voltage Voc. GaInAsSb epitaxial layers were transferred to GaAs by wafer bonding with SiOx/Ti/Au, which provides electrical isolation of individual cells and forms an internal backsurface reflector. This configuration is compatible with monolithic series interconnection of TPV cells; can mitigate the requirements of filters used for front-surface spectral control; and has the potential to improve TPV device performance. Wafer-bonded GaInAsSb TPV cells exhibit nearly linear voltage building. At a short-circuit current density of 0.4 A/cm2, Voc of a single TPV cell is 0.2 V, compared to 0.37 and 1.8 V for 2- and 10-junction series-interconnected TPV cells, respectively. © 2003 American Institute of Physics.
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84.60.Jt Photoelectric conversion

Pulse energy enhancement in passive Q-switching operation with a class of Nd:GdxY1−xVO4 crystals

Junhai Liu, Xianlin Meng, Zongshu Shao, Minhua Jiang, Bernd Ozygus, Adalbert Ding, and Horst Weber

Appl. Phys. Lett. 83, 1289 (2003); http://dx.doi.org/10.1063/1.1601673 (3 pages) | Cited 52 times

Online Publication Date: 12 August 2003

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Passive Q-switching operation with a class of Nd:GdxY1−xVO4 crystals has been demonstrated. Compared to Nd:YVO4 and Nd:GdVO4, the pulse energy produced with Nd:Gd0.64Y0.36VO4 under certain conditions was found to be enhanced by factors of 6.0 and 2.5, while the peak power enhanced by factors of 14.7 and 3.6, respectively. At the incident pump power of 9.6 W, 1.3 W of average output power was obtained, with the pulse energy, peak power, and pulse repetition frequency being 166 μJ, 24.5 kW, and 7.7 kHz, respectively. © 2003 American Institute of Physics.
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42.70.Hj Laser materials
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Ultrafast nonlinearity of antimony polyphosphate glasses

E. L. Falcão Filho, C. A. C. Bosco, G. S. Maciel, Cid B. de Araújo, L. H. Acioli, M. Nalin, and Y. Messaddeq

Appl. Phys. Lett. 83, 1292 (2003); http://dx.doi.org/10.1063/1.1601679 (3 pages) | Cited 9 times

Online Publication Date: 12 August 2003

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We report on the ultrafast nonlinearity of antimony polyphosphate glasses measured using the Kerr shutter technique. The nonlinear refractive index, n2, was (1.1±0.2)×10−14 cm2/W at 800 nm, and enhancement of n2 by ≈80% was observed by adding 10% of lead oxide in the glass composition. The full width at half-maximum of the third-order correlation signal was 150 fs, which implies a fast response of the samples (⩽100 fs). Nonlinear absorption was negligible in the range of intensities used. © 2003 American Institute of Physics.
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78.47.-p Spectroscopy of solid state dynamics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.70.Ce Glasses, quartz

Properties of 4-dicyanomethylene-2-methyl-6-(p-dimethyl-aminostyryl)-4H-pyran-doped Alq layers as optically pumped lasers

J. Jakabovič, O. Lengyel, J. Kováč, T. C. Wong, C. S. Lee, and S. T. Lee

Appl. Phys. Lett. 83, 1295 (2003); http://dx.doi.org/10.1063/1.1602153 (3 pages) | Cited 1 time

Online Publication Date: 12 August 2003

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The optical properties of tris-(8-hydroxyquinoline) aluminum (Alq) doped with 4-dicyanomethylene-2-methyl-6-(p-dimethyl-aminostyryl)-4H-pyran (DCM) in solutions and in solid films were studied by measuring the steady-state excitation and spontaneous emission spectra. The emission peak in the solid films shifted from 628 to 659 nm as the doping concentration of DCM changed from 0.9% to 11%. The optically pumped waveguide lasers were fabricated by coevaporation of Alq films with 1.3 wt % DCM onto gallium arsenide (GaAs) substrates using silicon dioxide (SiO2) and magnesium fluoride (MgF2) as cladding layers. Both types of waveguide laser structures showed optical confinement and simulated emission at a threshold pumping energy near 1.4 μJ. The result suggests a thin MgF2 may be used as a confinement layer that has the advantage of preparation by low-temperature evaporation. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes

Investigations on GaInNAsSb quinary alloy for 1.5 μm laser emission on GaAs

L. H. Li, V. Sallet, G. Patriarche, L. Largeau, S. Bouchoule, L. Travers, and J. C. Harmand

Appl. Phys. Lett. 83, 1298 (2003); http://dx.doi.org/10.1063/1.1601671 (3 pages) | Cited 36 times

Online Publication Date: 12 August 2003

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GaInNAsSb quantum wells grown by molecular-beam epitaxy on GaAs substrates were investigated. Intricate incorporation mechanisms of the constituents in this quinary alloy were seen. In highly strained indium-rich alloys, antimony incorporation is strongly reduced, and a beneficial surfactant effect is observed. Due to this effect, high structural quality is preserved even for an uncompensated 2.67% strained multiquantum-well structure. Narrow luminescence linewidth (35 meV) could be achieved near 1.55 μm wavelength with these quantum wells. Laser emission is demonstrated at 1.50 μm with threshold current density of 3.5 kA/cm2. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Controlled steady-state switching in optical bistability

Andy Brown, Amitabh Joshi, and Min Xiao

Appl. Phys. Lett. 83, 1301 (2003); http://dx.doi.org/10.1063/1.1600833 (3 pages) | Cited 13 times

Online Publication Date: 12 August 2003

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Optical switching has been achieved between two steady states of optical bistability generated in a system with three-level atoms inside an optical cavity. The optical power switching is controlled by adding short positive (switching up) or negative (switching down) pulses to the input intensity. The coupling laser beam in the three-level atomic system is used to control the threshold value and the width of the hysteresis cycle, which can adjust and optimize the optical switching process. © 2003 American Institute of Physics.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects

Tunable laser diodes by Stark effect

N. Le Thomas, N. T. Pelekanos, and Z. Hatzopoulos

Appl. Phys. Lett. 83, 1304 (2003); http://dx.doi.org/10.1063/1.1602561 (3 pages) | Cited 2 times

Online Publication Date: 12 August 2003

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We demonstrate wavelength tuning of a laser diode (LD) by the quantum-confined Stark effect. This is achieved by introducing tunneling barriers in the LD active region, as a result of which significant space-charge fields are generated during current injection, modulating the gain spectrum of the “lasing” quantum well. In such a “modified” InGaAs/AlGaAs LD, we observed up to 5-nm Stark-tuning of the lasing wavelength in the 900-nm spectral region. © 2003 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
78.67.De Quantum wells
78.20.Jq Electro-optical effects

Switchable optical polarizer based on electrochromism in stretch-aligned polyaniline

Peter Andersson, Magnus Berggren, and Thomas Kugler

Appl. Phys. Lett. 83, 1307 (2003); http://dx.doi.org/10.1063/1.1602556 (3 pages) | Cited 5 times

Online Publication Date: 12 August 2003

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We report on the polarizing electrochromic (EC) effect of a conjugated polymer. This has been achieved in a planar flexible electrochemical device cell comprised of a patterned stretch-aligned thin film of polyaniline and an electrolyte, all made on a polyethylene foil substrate. The resulting device exhibits polarized absorption characteristics, of a dichroic ratio of 4, that can be controlled by the voltage applied. Also, thin flexible EC polarizers have been realized by combining two stretch-aligned polyaniline films with orthogonal stretching direction. In the resulting EC polarizer the orientation of the polarized absorption can be switched between two orthogonal directions, depending on the voltage applied. © 2003 American Institute of Physics.
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42.79.Ci Filters, zone plates, and polarizers
78.20.Jq Electro-optical effects
42.70.Jk Polymers and organics

Curing temperature effects on liquid crystal gels

Fang Du and Shin-Tson Wu

Appl. Phys. Lett. 83, 1310 (2003); http://dx.doi.org/10.1063/1.1602152 (3 pages) | Cited 16 times

Online Publication Date: 12 August 2003

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The curing temperature is found to greatly affect the operating voltage, contrast ratio, hysteresis, and response time of the reversed-mode liquid crystal (LC) gels. For the gels using E48 LC host, the optimal curing temperature is around 40–50 °C. An LC gel with contrast ratio exceeds 2000:1 (at ∼2° collection angle), operating voltage lower than 7 Vrms, and response time of about 20 ms is demonstrated. Potential applications of such LC gels for optical switches, displays, and switchable polarizers are emphasized. © 2003 American Institute of Physics.
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82.70.Gg Gels and sols
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

Experimental and theoretical analysis of optically pumped semiconductor disk lasers

A. R. Zakharian, J. Hader, J. V. Moloney, S. W. Koch, P. Brick, and S. Lutgen

Appl. Phys. Lett. 83, 1313 (2003); http://dx.doi.org/10.1063/1.1601672 (3 pages) | Cited 26 times

Online Publication Date: 12 August 2003

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We describe the experimental cw power scaling of optically pumped semiconductor disk lasers OPS-DLs and give a detailed insight into the physical mechanism of this type of high-power surface-emitting semiconductor laser with external cavity. Minimizing the thermal resistance between active region and heat sink enables improved efficiency and gives access to high power and excellent beam quality of OPS-DL at 1000 nm. Results from initial numerical modeling are in good agreement with the experimental data, and show that thermal management is a critical parameter for the temperature-driven power shutoff in such devices. The computations are based on the macroscopic thermal transport, spatially resolved in both the radial and longitudinal directions, and coupled to the carrier density rate equations. A quantitative microscopic approach is used for the quantum-well gain and absorption dependence on wavelength, carrier density, and lattice temperature. The dependence of the computed output power on the substrate thickness and detuning are discussed. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Continuous wave 2.9 μm dysprosium-doped fluoride fiber laser

Stuart D. Jackson

Appl. Phys. Lett. 83, 1316 (2003); http://dx.doi.org/10.1063/1.1603353 (3 pages) | Cited 27 times

Online Publication Date: 12 August 2003

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Single-mode room-temperature cw laser emission on the 6H13/2→6H15/2 2.9 μm phonon terminated electronic transition of Dy3+ is demonstrated. The maximum output power of 0.275 W was generated at a slope efficiency of 4.5% (with respect to the absorbed pump power) when a Dy3+-doped ZBLAN fiber laser was tandem pumped with the ∼ 1100 nm output from a diode-cladding-pumped Yb3+-doped silica fiber laser. © 2003 American Institute of Physics.
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42.55.Wd Fiber lasers
42.60.By Design of specific laser systems

Electrical properties of p–n junctions based on superlattices of AlN/AlGa(In)N

V. Kuryatkov, K. Zhu, B. Borisov, A. Chandolu, Ìu. Gherasoiu, G. Kipshidze, S. N. G. Chu, M. Holtz, Yu. Kudryavtsev, R. Asomoza, S. Nikishin, and H. Temkin

Appl. Phys. Lett. 83, 1319 (2003); http://dx.doi.org/10.1063/1.1603333 (3 pages) | Cited 6 times

Online Publication Date: 12 August 2003

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Measurements of acceptor activation energy in p–n junctions based on superlattices of AlN (1.25 nm thick) and Al0.08Ga0.92(In)N (0.5 nm thick), with the average AlN content greater than 0.6, are reported. Structural characteristics of superlattices were determined using transmission electron microscopy and x-ray diffraction. p–n junctions in mesa-etched diodes exhibit low leakage current densities of 3×10−10 A/cm2 at near zero bias. Acceptor activation energy of 207±10 meV, obtained from the temperature dependence of the forward current, is very similar to that of uniform alloy of Al0.08Ga0.92N that constitutes the well material. The acceptor activation energy thus appears controlled by the well material and remains low despite high average AlN content and large band gap. © 2003 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.65.Cd Superlattices
68.37.Lp Transmission electron microscopy (TEM)

Ultrabroadband terahertz field detection by photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs

Tze-An Liu, Masahiko Tani, Makoto Nakajima, Masanori Hangyo, and Ci-Ling Pan

Appl. Phys. Lett. 83, 1322 (2003); http://dx.doi.org/10.1063/1.1604191 (3 pages) | Cited 18 times

Online Publication Date: 12 August 2003

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The photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs are demonstrated to have a useful bandwidth beyond 20 THz for a gating laser pulse width of 15 fs. The bandwidth and signal-to-noise ratio are compared with those of reference photoconductive antennas based on low-temperature grown GaAs. © 2003 American Institute of Physics.
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73.61.Ey III-V semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
84.40.Ba Antennas: theory, components and accessories
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
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Aggregate nitrogen in synthetic diamond

Karen M. McNamara

Appl. Phys. Lett. 83, 1325 (2003); http://dx.doi.org/10.1063/1.1347012 (3 pages) | Cited 6 times

Online Publication Date: 12 August 2003

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Nitrogen is a commonly observed impurity in natural and synthetic diamond, yet there are still many questions in regard to its incorporation in the material. In all three common forms of diamond: natural, high-pressure high-temperature synthetic, and chemical vapor deposition (CVD) diamond; nitrogen has been observed in substitutional lattice sites. This configuration results in an unpaired electron which gives rise to an easily observed paramagnetic resonance. In addition, aggregate forms of nitrogen, such as A-center (paired nitrogen), B-center, and platelet-related nitrogen are the predominant form of nitrogen observed in natural Type Ia diamonds. These aggregate forms have yet to be observed unambiguously in any form of synthetic diamond. Here, we show evidence, based on quantitative secondary ion mass spectrometry and electron paramagnetic resonance spectroscopy measurements, of nonparamagnetic nitrogen in some CVD diamond films. Further examination of the symmetry-disallowed one-phonon absorption in the infrared spectra of these films indicates the presence of aggregate nitrogen in these materials. © 2003 American Institute of Physics.
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81.05.U- Carbon/carbon-based materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.Nk Insulators
71.55.Ht Other nonmetals
76.30.Lh Other ions and impurities
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
78.30.Hv Other nonmetallic inorganics

Effect of ordered arrays of native defects on the crystal structure of In- and Ga-rich Cu-ternaries

C. Rincón, S. M. Wasim, G. Marín, J. M. Delgado, and J. Contreras

Appl. Phys. Lett. 83, 1328 (2003); http://dx.doi.org/10.1063/1.1600516 (3 pages) | Cited 6 times

Online Publication Date: 12 August 2003

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A comparative study of the unit cell parameters a and c, and volume V of the chalcopyrite-related of In- and Ga-rich ordered defect compounds of the ternary systems Cu-In-Se, Cu-In-Te, Cu-Ga-Se, and Cu-Ga-Te is presented. It is observed that these parameters decrease in the sequence 1:1:2→3:5:9→5:9:16→2:4:7→1:3:5→1:5:8. This behavior is attributed to the presence of arrays of ordered defects in the crystal lattice of these compounds. It is also found that values of a, c, and V in these systems vary linearly with the fraction m of [2 VCu−1+(In,Ga)Cu+2] defect pair for each unit of Cu(In,Ga)(Se2,Te2). © 2003 American Institute of Physics.
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61.66.Fn Inorganic compounds
81.05.Hd Other semiconductors
81.10.Fq Growth from melts; zone melting and refining
61.72.-y Defects and impurities in crystals; microstructure

Two-dimensional tunable photonic crystal formed in a liquid-crystal/polymer composite: Threshold behavior and morphology

Michael J. Escuti, Jun Qi, and Gregory P. Crawford

Appl. Phys. Lett. 83, 1331 (2003); http://dx.doi.org/10.1063/1.1600533 (3 pages) | Cited 43 times

Online Publication Date: 12 August 2003

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A two-dimensional (2D) transverse square lattice is formed using holographic methods in a liquid-crystal/polymer composite through a photoinduced diffusion process. The polymer morphology is investigated using scanning electron microscopy. The kinetics of formation is described within the framework of a 2D diffusion model, and a simple phenomenological description captures the nature of the Freedericksz transition, allowing the estimation of the surface anchoring strength W ≈ 3×10−4 J/m2. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.70.Df Liquid crystals
61.30.Pq Microconfined liquid crystals: droplets, cylinders, randomly confined liquid crystals, polymer dispersed liquid crystals, and porous systems
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

Influence of Si substrate orientation on stress development in Pd silicide films grown by solid-state reaction

P. Gergaud, M. Megdiche, O. Thomas, and B. Chenevier

Appl. Phys. Lett. 83, 1334 (2003); http://dx.doi.org/10.1063/1.1601301 (3 pages) | Cited 8 times

Online Publication Date: 12 August 2003

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In situ real-time measurements of stress are performed during solid-state reaction of a palladium thin film with Si(001) or Si(111) single crystals. The stress in Pd2Si is compressive in both cases at variance with the sign of epitaxial misfit. A large difference in stress relaxation kinetics between fiber textured [on Si(001)] and epitaxial [on Si(111)] Pd2Si films is evidenced. This difference is correlated with a considerable variation in stress buildup during silicide growth. The microstructure of the growing phase is thus a key parameter for stress development during solid-state reaction. © 2003 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

Optically tunable mechanics of microlevers

M. Vogel, C. Mooser, K. Karrai, and R. J. Warburton

Appl. Phys. Lett. 83, 1337 (2003); http://dx.doi.org/10.1063/1.1600513 (3 pages) | Cited 22 times

Online Publication Date: 12 August 2003

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We show how the mechanical rigidity of a slightly detuned miniature Fabry–Pérot cavity can be modified with light. We use a microcavity in which one of the mirrors is a soft compliant microlever optimized to detect bolometric forces. The static compliance can either be decreased to zero or increased considerably depending on the detuning of the light with respect to the cavity resonance. © 2003 American Institute of Physics.
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07.10.Cm Micromechanical devices and systems
37.10.Vz Mechanical effects of light on atoms, molecules, and ions
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Direct access to the dispersion relations of multiple anisotropic surface acoustic modes by Fourier image analysis

Y. Sugawara, O. B. Wright, and O. Matsuda

Appl. Phys. Lett. 83, 1340 (2003); http://dx.doi.org/10.1063/1.1602151 (3 pages) | Cited 9 times

Online Publication Date: 12 August 2003

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We present a method based on a combination of temporal and spatial Fourier image analysis, involving the incorporation of a time-reversed acoustic propagation component, that can be used to obtain the angular dispersion or general dispersion relations of multiple surface acoustic modes excited by a localized pulsed source. The method is applied to the study of acoustic propagation at the surface of the highly anisotropic single-crystal TeO2 coated with a thin gold film. © 2003 American Institute of Physics.
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68.35.Iv Acoustical properties

Optimized annealing conditions identified by analysis of radiative recombination in dilute Ga(As,N)

Gregor Mussler, Lutz Däweritz, Klaus H. Ploog, Jens W. Tomm, and Vadim Talalaev

Appl. Phys. Lett. 83, 1343 (2003); http://dx.doi.org/10.1063/1.1602576 (3 pages) | Cited 10 times

Online Publication Date: 12 August 2003

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Rapid thermal annealing parameters for Ga(As,N) with 0.5% N are experimentally analyzed. The criteria taken into account are the relative intensity of the observed deep level photoluminescence, the intensity of edge luminescence contributions, and the luminescence decay time. For a 60 s treatment, we find an optimum annealing temperature of 850 °C with a clear tendency of lower optimum annealing temperatures for increasing N contents. Luminescence decay times of up to 400 ps for recombination of delocalized carrier pairs match well the lifetime region specific for direct III–V semiconductors and provide clear evidence of the type-I band alignment in the Ga(As,N) samples investigated. © 2003 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
71.55.Eq III-V semiconductors

Enhanced green emission in ZnGa2O4:Mn thin film phosphors by Se doping

Jung Hyun Jeong, Byung Kee Moon, Hyo Jin Seo, Jong Seong Bae, Soung-Soo Yi, Ill Won Kim, and Hong Lee Park

Appl. Phys. Lett. 83, 1346 (2003); http://dx.doi.org/10.1063/1.1602169 (3 pages) | Cited 7 times

Online Publication Date: 12 August 2003

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Mn-doped ZnGa2O4−xSex thin film phosphors have been grown using pulsed-laser ablation under various growth conditions. The structural characterization was carried out on a series of ZnGa2O4−xSex:Mn2+ films grown on MgO(100) substrates using Zn-rich ceramic targets. Zn-rich ceramic targets have been prepared to compensate the vaporization loss of Zn. The oxygen pressure was fixed at 100 mTorr and substrate temperatures were varied from 500 to 700 °C. The luminescence results indicated that MgO (100) is one of the most promised substrates for the growth of high-quality ZnGa2O4−xSex:Mn2+ films. In particular, the incorporation of Se into the ZnGa2O4 lattice induced a remarkable increase of photoluminescence. The highest green emission intensity was observed with ZnGa2O3.925Se0.075:Mn2+ films whose brightness was increased by a factor of 3.1 in comparison with that of ZnGa2O4:Mn2+ films. This phosphor may promise for application to the flat panel displays. © 2003 American Institute of Physics.
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78.66.Li Other semiconductors
78.55.Hx Other solid inorganic materials
81.05.Hd Other semiconductors
81.15.Fg Pulsed laser ablation deposition
61.72.up Other materials

Effect of the InAlGaP matrix on the growth of self-assembled InP quantum dots by metalorganic chemical vapor deposition

X. B. Zhang, R. D. Heller, M. S. Noh, R. D. Dupuis, G. Walter, and N. Holonyak

Appl. Phys. Lett. 83, 1349 (2003); http://dx.doi.org/10.1063/1.1600825 (3 pages) | Cited 9 times

Online Publication Date: 12 August 2003

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InP self-assembled quantum dots (QDs) were deposited on lattice-matched In0.5(AlxGa1−x)0.5P matrices grown on (001) GaAs substrates by using metalorganic chemical vapor deposition. We found that the Al concentration in the matrix has a great influence on the size of the InP QDs. For a fixed volume of deposited InP, the size of the QDs decreases with an increase in the Al concentration in the In0.5(AlxGa1−x)0.5P matrix. We suggest that this variation in QD size is a result of an alloying effect caused by atomic intermixing between the InP dots and the underlying matrix material. The stronger intermixing between InP and the Ga-rich matrices (relative to Al-rich matrices) results in larger QDs on these surfaces. The intermixing effect, as expected, reduces the lattice mismatch and, as a result, leads to a larger critical thickness of the wetting layer when the growth temperature is higher. The growth of InP QDs on an InAlP matrix with a thin GaP intermediate buffer layer also supports the interpretation as an intermixing effect. © 2003 American Institute of Physics.
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81.07.Ta Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.16.Dn Self-assembly

Shear-induced metallization of triamino-trinitrobenzene crystals

M. Riad Manaa

Appl. Phys. Lett. 83, 1352 (2003); http://dx.doi.org/10.1063/1.1603351 (3 pages) | Cited 4 times

Online Publication Date: 12 August 2003

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I report first principle density-functional calculations that demonstrate an insulator-metal transition based on the bending of covalent bonds in 1,3,5-triamino-2,4,6-trinitrobenzene, an organic molecular crystal. The critical shear angle responsible for the vanishing of the energy band gap is achieved at near constant volume via a 55° bending of the nitro group out of the molecular plane, accompanied by 0.1 Å stretch in the N–O bonds. The energy needed for inducing this motion is of the same order of magnitude as the energy band gap. © 2003 American Institute of Physics.
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71.30.+h Metal-insulator transitions and other electronic transitions
71.20.Rv Polymers and organic compounds
62.20.F- Deformation and plasticity
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
61.50.Lt Crystal binding; cohesive energy

A simple model for the prediction of thermal conductivity in pure and doped insulating crystals

Romain Gaumé, Bruno Viana, Daniel Vivien, Jean-Paul Roger, and Danièle Fournier

Appl. Phys. Lett. 83, 1355 (2003); http://dx.doi.org/10.1063/1.1601676 (3 pages) | Cited 71 times

Online Publication Date: 12 August 2003

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We present a simplified approach to evaluate the thermal conductivity of insulating crystals, taking into account chemical and structural properties. We complete the thermal conductivity evaluation in the case of point defects encountered in luminescent materials. Thermal conductivity coefficients have been determined by photothermal experiments and are in good agreement with the predicted values in Yb:Y3Al5O12 and Yb:Gd3Ga5O12 solid-state lasers. © 2003 American Institute of Physics.
Show PACS
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
61.72.J- Point defects and defect clusters
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
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