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Applied Physics Letters / Volume 83 / Issue 7 / INTERDISCIPLINARY AND GENERAL PHYSICS

Appl. Phys. Lett. 83, 1474 (2003); http://dx.doi.org/10.1063/1.1602579 (3 pages)

Temporal pulse manipulation and ion generation in ultrafast laser ablation of silicon

M. Spyridaki1, E. Koudoumas1, P. Tzanetakis1, C. Fotakis1, R. Stoian2, A. Rosenfeld2, and I. V. Hertel2

1Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, P.O. Box 1527, 71110 Heraklion, Greece
2Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Strasse 2a, D-12489 Berlin, Germany

(Received 10 April 2003; accepted 18 June 2003)

The possibility of phase manipulation and temporal tailoring of ultrashort laser pulses provides new opportunities for optimal processing of materials. An experimental demonstration of the technique that shows the possibility to design excitation sequences tailored with respect to the material response is presented, laying the groundwork for adaptive optimization in material structuring. The technique is particularly suitable to generate controllable ion beams by ultrafast laser ablation. Silicon samples irradiated with multiple laser pulses separated by the phase-transformation time show increased ion emission efficiency with different energetic signatures correlated to a cleaner aspect of the laser-induced structures on the surface. © 2003 American Institute of Physics.

© 2003 American Institute of Physics

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KEYWORDS and PACS

Keywords

silicon, elemental semiconductors, laser ablation, ion emission

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1602579

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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