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18 Aug 2003

Volume 83, Issue 7, pp. 1283-1488

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 1462 (2003); http://dx.doi.org/10.1063/1.1601693 (3 pages)

X. Cartoixà, D. Z.-Y. Ting, and Y.-C. Chang
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Brillouin scattering study on relaxor ferroelectric Pb(Zn1/3Nb2/3)O3

Yoshihiro Gorouya, Yuhji Tsujimi, Makoto Iwata, and Toshirou Yagi

Appl. Phys. Lett. 83, 1358 (2003); http://dx.doi.org/10.1063/1.1603340 (3 pages) | Cited 20 times

Online Publication Date: 12 August 2003

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The 90° Brillouin scattering experiment has been performed on a Pb(Zn1/3Nb2/3)O3 single crystal. The frequency shift and linewidth of the c33 pure longitudinal acoustic mode and the c44 pure transverse mode show bending anomalies near Tm = 397 K, at which the low-frequency dielectric constant ϵ has a maximum value. In addition to the acoustic modes, a relaxational mode is found in the form of a central peak. The relaxation time τ of the mode has a temperature dependence similar to that of ϵ and shows a broad peak anomaly around Tm. The temperature dependence of τ can be analyzed by a modified superparaelectric model. © 2003 American Institute of Physics.
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78.35.+c Brillouin and Rayleigh scattering; other light scattering
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
63.20.-e Phonons in crystal lattices
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Surface reconstructions of In-enriched InGaAs alloys

J. Mirecki Millunchick, A. Riposan, B. J. Dall, Chris Pearson, and B. G. Orr

Appl. Phys. Lett. 83, 1361 (2003); http://dx.doi.org/10.1063/1.1602557 (3 pages) | Cited 14 times

Online Publication Date: 12 August 2003

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The atomic structure of In0.81Ga0.19As/InP alloy layers was examined using in situ scanning tunneling microscopy. The (2×3) reconstruction observed during growth by reflection high-energy electron diffraction represents a combination of surface structures, including a β2(2×4) commonly observed on GaAs(001) and InAs(001) surfaces, and a disordered (4×3) that is unique to alloy systems. The proposed (4×3) structure is comprised of both anion and cation dimers. Empty and filled states images show that the features reverse contrast with sample bias, in agreement with the model. © 2003 American Institute of Physics.
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68.47.Fg Semiconductor surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Self-assembled nanostructures through wavelength-controlled spinodal decomposition

P. Alex Greaney, D. C. Chrzan, B. M. Clemens, and W. D. Nix

Appl. Phys. Lett. 83, 1364 (2003); http://dx.doi.org/10.1063/1.1602581 (3 pages) | Cited 3 times

Online Publication Date: 12 August 2003

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The self-assembly of nanostructured materials through controlled wavelength spinodal decomposition is explored using a simple model. The model assumes that a homogeneous alloy is deposited on a rigid, periodically strained substrate. A linear stability analysis establishes that the film will undergo spinodal decomposition with the dominant wavelength determined by the periodicity of the substrate strain. © 2003 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
64.75.-g Phase equilibria

Formation of nanoscale voids and related metallic impurity gettering in high-energy ion-implanted and annealed epitaxial silicon

A. Kvit, R. A. Yankov, G. Duscher, G. Rozgonyi, and J. M. Glasko

Appl. Phys. Lett. 83, 1367 (2003); http://dx.doi.org/10.1063/1.1601678 (3 pages) | Cited 6 times

Online Publication Date: 12 August 2003

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We have examined nanovoid formation, Fe gettering, and Fe clustering phenomena occurring in epitaxial silicon layers implanted with MeV Si ions. Insights into these phenomena as a function of depth have been gained from detailed analyses by Z-contrast imaging in conjunction with electron energy-loss spectroscopy. Our work has shown at the nanoscale structural and chemical levels that the defects produced by MeV self-ion implantation between the surface and the ion projected range Rp (i.e., in the so-called Rp/2 region) are voids, which provide extremely efficient and aggressive metallic impurity gettering. It has been proposed that the gettering does not occur via chemisorption or silicidation layering on the internal surface of the void walls, as in the well-known case of helium-induced cavities, but rather proceeds in a mode of metal–metal atom binding in the vicinity of the Rp/2 voids. © 2003 American Institute of Physics.
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61.72.uf Ge and Si
61.82.Fk Semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.80.Jh Ion radiation effects
61.72.Yx Interaction between different crystal defects; gettering effect
79.20.Uv Electron energy loss spectroscopy
68.37.Lp Transmission electron microscopy (TEM)

On mechanical properties of nanostructured meso-porous silicon

Ch. Populaire, B. Remaki, V. Lysenko, D. Barbier, H. Artmann, and T. Pannek

Appl. Phys. Lett. 83, 1370 (2003); http://dx.doi.org/10.1063/1.1603336 (3 pages) | Cited 15 times

Online Publication Date: 12 August 2003

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Mechanical properties of meso-porous silicon are studied using topographic measurements and finite element simulations. Our approach is based on an original analysis of the strain at the free surface of porous silicon tub embedded in bulk Si regions allowing the determination of the Young’s modulus of the porous layers. In particular, the internal stress in the porous Si region is evaluated from the corresponding deformation of the monocrystalline Si adjacent region which mechanical parameters are well known. Moreover, a mechanical anisotropy of the columnar nanostructured porous Si is brought to the fore from the characteristic shape of the strained porous layer profile. Moderately oxidized, 70% in porosity, porous silicon patterns were investigated. Correlation of our measurements with x-ray data reported early in literature shows the macroscopic strain being close to the silicon lattice relative increase revealing an elastic deformation regime. The porous layers exhibit an unexpected low and strongly anisotropic Young’s modulus for all samples. Young’s modulus values of 1.5 and 0.44 GPa are found in parallel and perpendicular directions of the columnar structure, respectively. Finally, a phenomenological model for such a mechanical behavior taking into account porosity and percolation strength factor of the randomly arranged as-prepared and partially oxidized porous Si nanostructures is proposed. © 2003 American Institute of Physics.
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81.40.Jj Elasticity and anelasticity, stress-strain relations
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
62.20.D- Elasticity
68.47.Fg Semiconductor surfaces
61.43.Gt Powders, porous materials
61.46.-w Structure of nanoscale materials

Te-free, Sb-based phase-change materials for high-speed rewritable optical recording

L. van Pieterson, M. van Schijndel, J. C. N. Rijpers, and M. Kaiser

Appl. Phys. Lett. 83, 1373 (2003); http://dx.doi.org/10.1063/1.1604172 (3 pages) | Cited 45 times

Online Publication Date: 12 August 2003

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High-speed rewritable optical disks based on conventional (eutectic) Sb–Te phase-change materials have low archival life stability and high media noise. We propose Te-free, Sb-based phase-change materials for recording at linear velocities over 28 m/s. These materials combine good optical contrast, rapid crystallization, and high amorphous phase stability. © 2003 American Institute of Physics.
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42.79.Vb Optical storage systems, optical disks
68.37.Lp Transmission electron microscopy (TEM)
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Quasiballistic transport in HgTe quantum-well nanostructures

V. Daumer, I. Golombek, M. Gbordzoe, E. G. Novik, V. Hock, C. R. Becker, H. Buhmann, and L. W. Molenkamp

Appl. Phys. Lett. 83, 1376 (2003); http://dx.doi.org/10.1063/1.1602170 (3 pages) | Cited 12 times

Online Publication Date: 12 August 2003

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The transport properties of micrometer scale structures fabricated from high-mobility HgTe quantum wells have been investigated. A special photoresist and Ti masks were used, which allow for the fabrication of devices with characteristic dimensions down to 0.45 μm. Evidence that the transport properties are dominated by ballistic effects in these structures is presented. Monte Carlo simulations of semiclassical electron trajectories show good agreement with the experiment. © 2003 American Institute of Physics.
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73.63.Hs Quantum wells
81.07.St Quantum wells
81.16.Nd Micro- and nanolithography

Influence of carrier localization on modulation mechanism in photoreflectance of GaAsN and GaInAsN

R. Kudrawiec, G. Sȩk, J. Misiewicz, L. H. Li, and J. C. Harmand

Appl. Phys. Lett. 83, 1379 (2003); http://dx.doi.org/10.1063/1.1602164 (3 pages) | Cited 22 times

Online Publication Date: 12 August 2003

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GaAs0.98N0.02 and Ga0.95In0.05As0.98N0.02 layers have been investigated by photoreflectance (PR) and photoluminescence in 10–300 K temperature range. A decrease in PR signal has been found when the temperature was lowered. This effect is attributed to a weakening of modulation efficiency, which is induced by carrier localization that has been evidenced in low temperature photoluminescence. The Kramers–Kronig analysis is proposed as a simple method to determine the evolution of transition intensity with temperature when the change in the PR line shape can take place. © 2003 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors

Gain and temporal response of AlGaN solar-blind avalanche photodiodes: An ensemble Monte Carlo analysis

C. Sevik and C. Bulutay

Appl. Phys. Lett. 83, 1382 (2003); http://dx.doi.org/10.1063/1.1602163 (3 pages) | Cited 10 times

Online Publication Date: 12 August 2003

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Multiplication and temporal response characteristics of p+-n-n+ GaN and n-type Schottky Al0.4Ga0.6N avalanche photodiodes (APD) have been analyzed using the ensemble Monte Carlo method. Reasonable agreement is obtained with the published measurements for a GaN APD without any fitting parameters. In the case of AlGaN, the choice of a Schottky contact APD is seen to improve drastically the field confinement resulting in satisfactory gain characteristics. For the GaN APD, an underdamped step response is observed in the rising edge, and a Gaussian profile damping in the falling edge under an optical pulse with the switching speed degrading towards the gain region. In the AlGaN case, alloy scattering is seen to further slow down the temporal response while displacing the gain threshold to higher fields. © 2003 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors

Hydrogen passivation of nitrogen in SiC

A. Gali, P. Deák, N. T. Son, and E. Janzén

Appl. Phys. Lett. 83, 1385 (2003); http://dx.doi.org/10.1063/1.1604461 (3 pages) | Cited 5 times

Online Publication Date: 12 August 2003

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First-principles calculations carried out in 4H-SiC show that hydrogen may form stable complexes with substitutional nitrogen, passivating the shallow nitrogen donor. The complex is very stable with respect to isolated positive donors and negatively charged hydrogen interstitials, so reactivation is expected only at high temperature. The binding energy also increases the concentration of hydrogen, incorporated into 4H-SiC during growth or postgrowth hydrogenation. © 2003 American Institute of Physics.
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71.55.Ht Other nonmetals
73.20.Hb Impurity and defect levels; energy states of adsorbed species
81.65.Rv Passivation
71.15.Nc Total energy and cohesive energy calculations
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The role of a superconducting seed layer in the structural and transport properties of EuBa2Cu3O7−x films

Q. X. Jia, S. R. Foltyn, P. N. Arendt, H. Wang, J. L. MacManus-Driscoll, Y. Coulter, Y. Li, M. P. Maley, M. Hawley, K. Venkataraman, and V. A. Maroni

Appl. Phys. Lett. 83, 1388 (2003); http://dx.doi.org/10.1063/1.1601680 (3 pages) | Cited 8 times

Online Publication Date: 12 August 2003

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We report on the structural and transport properties of EuBa2Cu3O7−x (Eu123) films on SrTiO3 substrates. A substrate temperature 100 °C higher than that used to deposit YBa2Cu3O7−x (Y123) is needed to grow high-performance Eu123 films directly on SrTiO3 substrates. However, this high-temperature restriction can be circumvented by inserting a seed layer (∼12 nm) of Y123, Gd123, or Dy123 between the substrate and the Eu123. A structural analysis reveals that a transition region that promotes the growth of the a-axis is first formed on the surface of the substrate if the Eu123 is deposited directly on SrTiO3 at a temperature of less than 800 °C. On the other hand, the use of a seed layer of another superconducting material restructures the Eu123 to the right phase without forming this transition region. Eu123 films with critical temperatures of 94 K and critical current densities of 5.8×106 A/cm2 at 75.5 K have been deposited under standard deposition conditions using such an approach. © 2003 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors
74.25.Sv Critical currents
74.10.+v Occurrence, potential candidates

Bidirectional resonant tunneling spin pump

David Z.-Y. Ting and Xavier Cartoixà

Appl. Phys. Lett. 83, 1391 (2003); http://dx.doi.org/10.1063/1.1602158 (3 pages) | Cited 12 times

Online Publication Date: 12 August 2003

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We propose a mechanism for achieving bidirectional spin pumping in conventional nonmagnetic semiconductor resonant tunneling heterostructures under zero magnetic field. The device is designed specifically to take advantage of the special spin configuration described by the Rashba effect in asymmetric quantum wells. It induces the simultaneous flow of oppositely spin-polarized current components in opposite directions through spin-dependent resonant tunneling, and can thus generate significant levels of spin current with very little net electrical current across the tunnel structure, a condition characterized by a greater-than-unity current spin polarization. We also present modeling results on temperature dependence and finite device size effects. © 2003 American Institute of Physics.
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85.75.Mm Spin polarized resonant tunnel junctions
85.30.Kk Junction diodes
85.30.De Semiconductor-device characterization, design, and modeling
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

In situ near-field imaging of magnetic domain patterns in ultrathin iron films

G. Meyer, T. Crecelius, A. Bauer, I. Mauch, and G. Kaindl

Appl. Phys. Lett. 83, 1394 (2003); http://dx.doi.org/10.1063/1.1603354 (3 pages) | Cited 9 times

Online Publication Date: 12 August 2003

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We report on a scanning near-field optical microscope which operates in ultrahigh vacuum and allows magneto-optical Kerr-effect measurements at variable temperatures and in external magnetic fields with subwavelength lateral resolution. High magneto-optical contrast is achieved by combination with a Sagnac interferometer. In this way, magnetic domain patterns of ultrathin films of Fe/Cu(100), grown at 80 K, were studied in situ. A domain phase consisting of perpendicularly magnetized submicron wide stripes with directional order was observed. © 2003 American Institute of Physics.
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75.50.Bb Fe and its alloys
75.70.Ak Magnetic properties of monolayers and thin films
75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.60.Ch Domain walls and domain structure
78.20.Ls Magneto-optical effects
78.66.Bz Metals and metallic alloys

Gate-controllable spin battery

Wen Long, Qing-Feng Sun, Hong Guo, and Jian Wang

Appl. Phys. Lett. 83, 1397 (2003); http://dx.doi.org/10.1063/1.1603331 (3 pages) | Cited 43 times

Online Publication Date: 12 August 2003

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We propose a gate-controllable spin-battery for spin current. The spin battery consists of a lateral double quantum dot under a uniform magnetic field. A finite dc spin current is driven out of the device by controlling a set of gate voltages. Spin current can also be delivered in the absence of charge current. The proposed device should be realizable using present technology at low temperature. © 2003 American Institute of Physics.
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72.25.Hg Electrical injection of spin polarized carriers
85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
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Slow trap response of zirconium dioxide thin films on silicon

S. Harasek, A. Lugstein, H. D. Wanzenboeck, and E. Bertagnolli

Appl. Phys. Lett. 83, 1400 (2003); http://dx.doi.org/10.1063/1.1602577 (3 pages) | Cited 8 times

Online Publication Date: 12 August 2003

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In this work, we explore the electrical properties of a metal–oxide–semiconductor system that incorporates a high-k zirconia dielectric with an equivalent oxide thickness of 3 nm deposited by metalorganic chemical vapor deposition. In general, the thin films examined exhibit excellent electrical properties. However, dynamic I–V measurements unveil the presence of trapping sites with response times up to 3 s. By applying a recently proposed model, this slow trap response can be consistently explained by traps located at the inner interface of a two-layer dielectric consisting of the high-k material itself and a transition layer in contact with the semiconductor. Trap energies are found to be distributed around two distinct levels. © 2003 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
61.72.Cc Kinetics of defect formation and annealing

Arsenic penetration behavior and electrical characteristics of As-doped n+ polycrystalline-silicon/high-k gate dielectric (HfO2 and Al2O3) films on Si (100) substrate

Chihoon Lee, Jihoon Choi, Moonju Cho, Jaehoo Park, Cheol Seong Hwang, Hyeong Joon Kim, Jaehack Jeong, and Wonshik Lee

Appl. Phys. Lett. 83, 1403 (2003); http://dx.doi.org/10.1063/1.1602168 (3 pages) | Cited 10 times

Online Publication Date: 12 August 2003

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Arsenic (As)-doped polycrystalline-silicon gate/HfO2, HfO2–Al2O3, or Al2O3–HfO2–Al2O3/p-type Si (100) metal–oxide–semiconductor capacitors were fabricated using an atomic-layer-deposition technique to investigate the degree of As penetration and the electrical properties of various high-k gate dielectric stacks. The HfO2–Al2O3 stack film showed the highest resistance to As diffusion due to the presence of a rather thick amorphous interface layer. A flatband voltage shift of 100 mV, a leakage current density of −1.07×10−9 A/cm2 at −1 V, a hysteresis voltage <60 mV and excellent reliability characteristics were obtained from this capacitor stack due to the lowest As penetration, less generation of the interface state density, and the lowest surface roughness. Thin Al2O3 capping did not improve the As-diffusion barrier properties due to its island-like surface morphology. © 2003 American Institute of Physics.
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84.32.Tt Capacitors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Cw Elemental semiconductors
73.20.At Surface states, band structure, electron density of states
68.35.B- Structure of clean surfaces (and surface reconstruction)

Dynamic response and hysteresis dispersion scaling of ferroelectric SrBi2Ta2O9 thin films

B. Pan, H. Yu, D. Wu, X. H. Zhou, and J.-M. Liu

Appl. Phys. Lett. 83, 1406 (2003); http://dx.doi.org/10.1063/1.1602580 (3 pages) | Cited 32 times

Online Publication Date: 12 August 2003

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The dynamic hysteresis response of ferroelectric SrBi2Ta2O9 thin films versus periodically varying electric field over a frequency range of f = 10−1–106 Hz and amplitude range of E0 = 15–158 kV/cm is measured utilizing the Sawyer–Tower method. The dynamic order parameter Q shows anomalous behavior against the field amplitude, and a single-peaked hysteresis dispersion is identified. The field response of hysteresis area 〈A〉 in the form of 〈A〉∝f2/3E02/3 over the low frequency range is evaluated, while the response over the high frequency range takes the form of 〈A〉∝f−1/3E02. We demonstrate that the hysteresis dispersion spectrum exhibits single-parameter scaling, and predicts a characteristic time for domain reversal that is inversely correlated to the field amplitude. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis

Dielectric relaxation in the Pb(Yb1/2Nb1/2)O3–PbTiO3 solid solution single crystal near the morphotropic phase boundary

Naohiko Yasuda, Hiroaki Inaba, Hidehiro Ohwa, Makoto Iwata, Hikaru Terauchi, and Yoshihiro Ishibashi

Appl. Phys. Lett. 83, 1409 (2003); http://dx.doi.org/10.1063/1.1603335 (2 pages) | Cited 4 times

Online Publication Date: 12 August 2003

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The dielectric properties in 0.47Pb(Yb1/2Nb1/2)O3–0.53PbTiO3 (0.47PYN–0.53PT) single crystals near the morphotropic phase boundary (MPB) were investigated in the frequency range from 10 kHz to 1 MHz. Remarkable dielectric relaxation was observed along the polar 〈001〉 direction in the tetragonal 0.47PYN–0.53PT single crystal near the MPB. An increase of the dielectric relaxation time was observed as the Curie temperature was approached. The real part and the imaginary part of the complex relative permittivity obeys the Cole–Cole arc law, and the Debye type dielectric dispersion with the polydispersive type among the order-disorder type ferroelectrics was observed. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
77.80.B- Phase transitions and Curie point
77.22.Ch Permittivity (dielectric function)

Preparation and basic properties of ferroelectric thin films having a superlattice structure of 2 Bi3TiNbO9 units–1 Bi4Ti3O12 unit

Akira Shibuya, Shinichi Ikemori, W. B. Wu, Minoru Noda, and Masanori Okuyama

Appl. Phys. Lett. 83, 1411 (2003); http://dx.doi.org/10.1063/1.1604171 (3 pages) | Cited 7 times

Online Publication Date: 12 August 2003

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Natural-superlattice-structured ferroelectric thin films, Bi3TiNbO9–Bi4Ti3O12 (BTN–BIT), have been grown on Pt/TiO2/SiO2/Si and SrTiO3(001) single-crystal substrates by pulsed-laser deposition (PLD) using BTN–BIT (1 mol:1 mol) targets. BTN–BIT films show natural-superlattice peaks below 2θ=16° in x-ray diffraction patterns only when using an oxygen pressure of 0.05–0.07 Torr in the deposition. The c-axis lattice constant (8.300 nm) of BTN–BIT films suggests a natural superlattice structure consisting of iteration of two unit cells of Bi3TiNbO9 and one unit cell of Bi4Ti3O12. This 2–1 superlattice structure is different from that of BTN–BIT ceramics (2.909 nm), which is 1–1 superlattice. Natural-superlattice-structured BTN–BIT thin films having the 2–1 superlattice prepared at 550 °C exhibit superior ferroelectricity reflected by the value of 2Pr, which is 50 μC/cm2. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
68.65.Cd Superlattices
81.15.Fg Pulsed laser ablation deposition

Anomalous leakage current characteristics of Pt/(Ba0.75,Sr0.25)Ti1+yO3+z/Pt thin films grown by metalorganic chemical vapor deposition

S. Saha, D. Y. Kaufman, S. K. Streiffer, and O. Auciello

Appl. Phys. Lett. 83, 1414 (2003); http://dx.doi.org/10.1063/1.1604484 (3 pages) | Cited 18 times

Online Publication Date: 12 August 2003

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The leakage and dielectric properties of a thickness series (90–480 nm) of {100} fiber-textured metalorganic chemical vapor deposited (Ba0.75Sr0.25)Ti1+yO3+z (BST) thin films on Pt/SiO2/Si were investigated. The permittivity demonstrated a suppressed temperature and electric field response that transitioned to a more bulk-like response with increasing thickness, consistent with earlier observations. At low fields the leakage currents showed a weak-field dependence and a monotonic increase with increasing temperature. In contrast, a positive temperature coefficient of resistance (PTCR) was observed in the leakage current behavior at high-field. The PTCR behavior was more pronounced for thicker BST films. The observed effect is contrasted with PTCR behavior in bulk BaTiO3 ceramics. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.22.Ch Permittivity (dielectric function)
77.80.-e Ferroelectricity and antiferroelectricity

Atomistic structure of the Si(100)–SiO2 interface: A synthesis of experimental data

Angelo Bongiorno and Alfredo Pasquarello

Appl. Phys. Lett. 83, 1417 (2003); http://dx.doi.org/10.1063/1.1604470 (3 pages) | Cited 40 times

Online Publication Date: 12 August 2003

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We construct atomistic models of the Si(100)–SiO2 interface in accord with available experimental data. Combining classical and first-principles simulation methods, we generate transition structures from crystalline silicon to disordered SiO2. The generation procedure accounts for the density of coordination defects, the amount and location of partially oxidized Si atoms, and the mass density profile, as measured in electron-spin-resonance, photoemission, and x-ray reflectivity experiments, respectively. A variety of model interfaces are obtained, differing by the degree of order in the transition region. © 2003 American Institute of Physics.
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68.35.Ct Interface structure and roughness
79.60.Jv Interfaces; heterostructures; nanostructures
76.30.-v Electron paramagnetic resonance and relaxation
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SiC-capped nanotip arrays for field emission with ultralow turn-on field

H. C. Lo, D. Das, J. S. Hwang, K. H. Chen, C. H. Hsu, C. F. Chen, and L. C. Chen

Appl. Phys. Lett. 83, 1420 (2003); http://dx.doi.org/10.1063/1.1599967 (3 pages) | Cited 45 times

Online Publication Date: 12 August 2003

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Silicon nanotips with tip diameter and height measuring 1 nm and 1 μm, respectively, and density in the range of 109–3×1011 cm−2, were fabricated monolithically from silicon wafers by electron cyclotron resonance plasma etching technique at a temperature of 200 °C. Field emission current densities of 3.0 mA/cm2 at an applied field of ∼ 1.0 V/μm was obtained from these silicon nanotips. High-resolution transmission electron microscope and Auger electron spectroscopy analyses concluded that the nanotips are composed of monolithic silicon and nanometer-size SiC cap at the top. A 0.35 V/μm turn-on field to draw a 10 μA/cm2 current density was demonstrated, which is much lower than other reported materials. The excellent field emission property demonstrated by these nanotips, which were fabricated by a process integrable to the existing silicon device technology at low temperatures, is a step forward in achieving low-power field emission displays and vacuum electronic devices. © 2003 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
81.65.Cf Surface cleaning, etching, patterning
61.46.-w Structure of nanoscale materials
79.20.Fv Electron impact: Auger emission
52.77.Bn Etching and cleaning

Nanosecond exciton recombination dynamics in colloidal CdSe quantum dots under ambient conditions

Artjay Javier, Donny Magana, Travis Jennings, and Geoffrey F. Strouse

Appl. Phys. Lett. 83, 1423 (2003); http://dx.doi.org/10.1063/1.1602159 (3 pages) | Cited 33 times

Online Publication Date: 12 August 2003

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In solution, CdSe quantum dot exciton recombination is composed of an intrinsic band edge exciton decay and a photoinduced charged exciton, which produces the observation of biexponential decay dynamics. The nearly identical radiative lifetimes of both intrinsic and extrinsic decays scale with the cube of the size, and the nonradiative rate for the intrinsic decay follows the energy gap law, while the charged exciton exhibits strong lattice perturbations arising from Frölich coupling to optical phonons. The charged exciton, which arises from recombination in a particle that has a photo-induced trapped carrier has a temporally resolved Stark shift of ∼20 meV. © 2003 American Institute of Physics.
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78.67.Hc Quantum dots
78.55.Et II-VI semiconductors
73.21.La Quantum dots
71.35.-y Excitons and related phenomena
63.20.kk Phonon interactions with other quasiparticles
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
78.20.Jq Electro-optical effects
78.47.-p Spectroscopy of solid state dynamics

Two-photon photoreduction of metallic nanoparticle gratings in a polymer matrix

Koshiro Kaneko, Hong-Bo Sun, Xuan-Ming Duan, and Satoshi Kawata

Appl. Phys. Lett. 83, 1426 (2003); http://dx.doi.org/10.1063/1.1601302 (3 pages) | Cited 28 times

Online Publication Date: 12 August 2003

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We report femtosecond laser nanofabrication using a metal ion-doped polymer. Submicron grating lines arising from two-photon, two-beam interferential fringes were found consisting of photoreduced metallic nanoparticles with diameters ranging from tens to over a hundred of nanometers. The laser-hybrid material interaction was initialized with an in situ photochemical reaction, leading to particle protrusion out of the flat sample surface. A violent change of morphology occurred when the irradiation time exceeded a critical value, producing an abnormal laser ablation image: instead of local material removal, protruding lines are found created at bright fringes. The phenomenon was interpreted as arising from an indirect ablation process. © 2003 American Institute of Physics.
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42.79.Dj Gratings
82.50.Pt Multiphoton processes
42.70.Jk Polymers and organics
81.16.Mk Laser-assisted deposition

Coulomb blockade oscillation in a multiwalled carbon nanotube with internanotube tunnel junctions

Eiichiro Watanabe, Kazuhito Tsukagoshi, Dai Kanai, Iwao Yagi, and Yoshinobu Aoyagi

Appl. Phys. Lett. 83, 1429 (2003); http://dx.doi.org/10.1063/1.1602559 (3 pages) | Cited 7 times

Online Publication Date: 12 August 2003

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Internanotube charge transport in a multiwalled carbon nanotube (MWNT) was investigated. We directly measured electrical transport from the outer nanotube to the inner nanotubes in a MWNT with two electrodes. The outer nanotubes between the two electrodes were disconnected, leaving the innermost nanotube, so that the current flows into the innermost nanotube via the internanotube junctions. The transport properties of this device clearly showed Coulomb blockade oscillation with a charging energy of 15 meV at 4.2 K. The observed Coulomb blockade oscillation was nonperiodic to the gate voltage, indicating that the multiple internanotube tunnel junctions were formed underneath the electrodes. © 2003 American Institute of Physics.
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73.63.Fg Nanotubes
73.23.Hk Coulomb blockade; single-electron tunneling
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