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18 Aug 2003

Volume 83, Issue 7, pp. 1283-1488

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Appl. Phys. Lett. 83, 1462 (2003); http://dx.doi.org/10.1063/1.1601693 (3 pages)

X. Cartoixà, D. Z.-Y. Ting, and Y.-C. Chang
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Influence of a GaN interfacial layer between n+-GaN and active layer on the characteristics of blue light-emitting diodes

C. S. Kim, H. K. Cho, C.-H. Hong, and H. J. Lee

Appl. Phys. Lett. 83, 1447 (2003); http://dx.doi.org/10.1063/1.1601307 (3 pages)

Online Publication Date: 12 August 2003

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Influence of a GaN interfacial layer with graded growth rate and modulated Si-doping between n+-GaN and InGaN/GaN multiquantum well on device performance of blue light-emitting diodes (LEDs) was investigated. It was found that the introduction of a GaN interfacial layer leads to an improvement of current–voltage characteristics and also an enhancement of output power compared to a conventional LED. These could result from the removal of spiral growth hillocks and smoothened morphology at the interface, as confirmed by atomic force microscopy measurements, which might cause the leakage current to decrease and the current injection into the active layer to enhance. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
68.35.Ct Interface structure and roughness
68.37.Ps Atomic force microscopy (AFM)
68.47.Fg Semiconductor surfaces

Supergain transistors on high-purity float-zone silicon substrate

D. J. Han, G. Batignani, and A. Del. Guerra

Appl. Phys. Lett. 83, 1450 (2003); http://dx.doi.org/10.1063/1.1602166 (3 pages) | Cited 1 time

Online Publication Date: 12 August 2003

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Since float-zone (FZ) silicon has lower contamination and longer minority carrier lifetime than those in Czochralski silicon and other semiconductor materials, it has potential advantages to fabricate a bipolar junction transistor on the FZ substrate to achieve high gain at very low current levels. In this report, the authors present preliminary experimental results on supergain bipolar junction transistors fabricated on unusual FZ refined high-resistivity silicon substrate and by ion implantation technology. A phosphorus-doped polycrystalline silicon backside gettering layer has been employed to preserve the long carrier lifetime of the high-purity FZ silicon. Bipolar junction transistors have demonstrated high current gain, more than 3300 for ultralow base current levels of 10 pA in this study. Possible applications of high-purity FZ silicon on some advanced semiconductor devices and circuits are discussed in this letter. © 2003 American Institute of Physics.
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85.30.Pq Bipolar transistors
73.61.Cw Elemental semiconductors
61.72.uf Ge and Si
61.72.Yx Interaction between different crystal defects; gettering effect
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors

Dual computational basis qubit in semiconductor heterostructures

M. J. Gilbert, R. Akis, and D. K. Ferry

Appl. Phys. Lett. 83, 1453 (2003); http://dx.doi.org/10.1063/1.1599633 (3 pages) | Cited 3 times

Online Publication Date: 12 August 2003

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Advances in quantum computing have revealed computing capabilities that threaten to render many of the public encryption codes useless against the hacking potential for a quantum-mechanical-based computing system. This potential forces the study of viable methods to keep vital information secure from third-party eavesdropping. In this letter, we propose a coupled electronic waveguide device to create a qubit with two computational bases. The characteristics we have obtained by simulating such devices suggest a possible way of implementing quantum cryptography in semiconductor device architectures. © 2003 American Institute of Physics.
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03.67.Dd Quantum cryptography and communication security

Resonant tunneling characteristics in SiO2/Si double-barrier structures in a wide range of applied voltage

Hiroya Ikeda, Masanori Iwasaki, Yasuhiko Ishikawa, and Michiharu Tabe

Appl. Phys. Lett. 83, 1456 (2003); http://dx.doi.org/10.1063/1.1603352 (3 pages) | Cited 18 times

Online Publication Date: 12 August 2003

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We have found that current–voltage characteristics of resonant tunneling diodes (RTDs) with a structure of Al/upper-SiO2/p−-Si-well/lower-SiO2/n+-Si substrate are distinctly categorized by the kinetic energy of electrons in the Si well injected from the n+-Si substrate. For RTDs with a lower-SiO2-layer thickness below 4 nm, negative differential conductance is observed in accordance with our previous work [Y. Ishikawa, T. Ishihara, M. Iwasaki, and M. Tabe, Electron. Lett. 37, 1200 (2001)], where electrons have relatively low kinetic energies below 2.7 eV in the Si well. On the other hand, RTDs with a lower-SiO2 layer thicker than 5 nm have specific characteristics of a large current peak and a large hysteresis at higher kinetic energies above 2.9 eV, indicating that hot electrons are readily stored in the Si well, probably due to enhanced impact ionization scattering. © 2003 American Institute of Physics.
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73.40.Gk Tunneling
85.30.Kk Junction diodes
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.63.Hs Quantum wells
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.50.Fq High-field and nonlinear effects
72.20.Ht High-field and nonlinear effects

Composition-dependent crystallization of alternative gate dielectrics

R. B. van Dover, M. L. Green, L. Manchanda, L. F. Schneemeyer, and T. Siegrist

Appl. Phys. Lett. 83, 1459 (2003); http://dx.doi.org/10.1063/1.1603341 (3 pages) | Cited 11 times

Online Publication Date: 12 August 2003

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We have investigated the crystallization of amorphous oxides that are considered likely candidates to replace amorphous SiO2 as the gate dielectric in advanced field-effect transistors. To avoid crystallization, the mole fraction of main-group oxide in the Zr–Si–O, Zr–Al–O, and Hf–Si–O systems must be greater than 83%, 65%, and 78%, respectively, leading to a maximum useful dielectric constant of only 6.9, 12.7, and 6.6, respectively. We conclude that the silicate systems are not likely to be useful as replacements for SiO2, while aluminates are more promising. © 2003 American Institute of Physics.
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64.70.K- Solid-solid transitions
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.22.Ch Permittivity (dielectric function)
68.55.Nq Composition and phase identification
61.66.Bi Elemental solids
61.66.Dk Alloys

A resonant spin lifetime transistor

X. Cartoixà, D. Z.-Y. Ting, and Y.-C. Chang

Appl. Phys. Lett. 83, 1462 (2003); http://dx.doi.org/10.1063/1.1601693 (3 pages) | Cited 57 times

Online Publication Date: 12 August 2003

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We present a device concept for a spintronic transistor based on the spin relaxation properties a two-dimensional electron gas (2DEG). The device design is very similar to that of the Datta and Das spin transistor. However, our proposed device works in the diffusive regime rather than in the ballistic regime. This eases lithographical and processing requirements. The switching action is achieved through the biasing of a gate contact, which controls the lifetime of spins injected into the 2DEG from a ferromagnetic emitter, thus allowing the traveling spins to be either aligned with a ferromagnetic collector or randomizing them before collection. The device configuration can easily be turned into a memory and a readout head for magnetically stored information. © 2003 American Institute of Physics.
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85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
72.25.Rb Spin relaxation and scattering
85.70.Li Other magnetic recording and storage devices (including tapes, disks, and drums)
85.30.-z Semiconductor devices
85.35.Ds Quantum interference devices
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