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18 Aug 2003

Volume 83, Issue 7, pp. 1283-1488

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 1462 (2003); http://dx.doi.org/10.1063/1.1601693 (3 pages)

X. Cartoixà, D. Z.-Y. Ting, and Y.-C. Chang
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Slow trap response of zirconium dioxide thin films on silicon

S. Harasek, A. Lugstein, H. D. Wanzenboeck, and E. Bertagnolli

Appl. Phys. Lett. 83, 1400 (2003); http://dx.doi.org/10.1063/1.1602577 (3 pages) | Cited 8 times

Online Publication Date: 12 August 2003

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In this work, we explore the electrical properties of a metal–oxide–semiconductor system that incorporates a high-k zirconia dielectric with an equivalent oxide thickness of 3 nm deposited by metalorganic chemical vapor deposition. In general, the thin films examined exhibit excellent electrical properties. However, dynamic I–V measurements unveil the presence of trapping sites with response times up to 3 s. By applying a recently proposed model, this slow trap response can be consistently explained by traps located at the inner interface of a two-layer dielectric consisting of the high-k material itself and a transition layer in contact with the semiconductor. Trap energies are found to be distributed around two distinct levels. © 2003 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
61.72.Cc Kinetics of defect formation and annealing

Arsenic penetration behavior and electrical characteristics of As-doped n+ polycrystalline-silicon/high-k gate dielectric (HfO2 and Al2O3) films on Si (100) substrate

Chihoon Lee, Jihoon Choi, Moonju Cho, Jaehoo Park, Cheol Seong Hwang, Hyeong Joon Kim, Jaehack Jeong, and Wonshik Lee

Appl. Phys. Lett. 83, 1403 (2003); http://dx.doi.org/10.1063/1.1602168 (3 pages) | Cited 10 times

Online Publication Date: 12 August 2003

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Arsenic (As)-doped polycrystalline-silicon gate/HfO2, HfO2–Al2O3, or Al2O3–HfO2–Al2O3/p-type Si (100) metal–oxide–semiconductor capacitors were fabricated using an atomic-layer-deposition technique to investigate the degree of As penetration and the electrical properties of various high-k gate dielectric stacks. The HfO2–Al2O3 stack film showed the highest resistance to As diffusion due to the presence of a rather thick amorphous interface layer. A flatband voltage shift of 100 mV, a leakage current density of −1.07×10−9 A/cm2 at −1 V, a hysteresis voltage <60 mV and excellent reliability characteristics were obtained from this capacitor stack due to the lowest As penetration, less generation of the interface state density, and the lowest surface roughness. Thin Al2O3 capping did not improve the As-diffusion barrier properties due to its island-like surface morphology. © 2003 American Institute of Physics.
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84.32.Tt Capacitors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Cw Elemental semiconductors
73.20.At Surface states, band structure, electron density of states
68.35.B- Structure of clean surfaces (and surface reconstruction)

Dynamic response and hysteresis dispersion scaling of ferroelectric SrBi2Ta2O9 thin films

B. Pan, H. Yu, D. Wu, X. H. Zhou, and J.-M. Liu

Appl. Phys. Lett. 83, 1406 (2003); http://dx.doi.org/10.1063/1.1602580 (3 pages) | Cited 32 times

Online Publication Date: 12 August 2003

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The dynamic hysteresis response of ferroelectric SrBi2Ta2O9 thin films versus periodically varying electric field over a frequency range of f = 10−1–106 Hz and amplitude range of E0 = 15–158 kV/cm is measured utilizing the Sawyer–Tower method. The dynamic order parameter Q shows anomalous behavior against the field amplitude, and a single-peaked hysteresis dispersion is identified. The field response of hysteresis area 〈A〉 in the form of 〈A〉∝f2/3E02/3 over the low frequency range is evaluated, while the response over the high frequency range takes the form of 〈A〉∝f−1/3E02. We demonstrate that the hysteresis dispersion spectrum exhibits single-parameter scaling, and predicts a characteristic time for domain reversal that is inversely correlated to the field amplitude. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis

Dielectric relaxation in the Pb(Yb1/2Nb1/2)O3–PbTiO3 solid solution single crystal near the morphotropic phase boundary

Naohiko Yasuda, Hiroaki Inaba, Hidehiro Ohwa, Makoto Iwata, Hikaru Terauchi, and Yoshihiro Ishibashi

Appl. Phys. Lett. 83, 1409 (2003); http://dx.doi.org/10.1063/1.1603335 (2 pages) | Cited 4 times

Online Publication Date: 12 August 2003

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The dielectric properties in 0.47Pb(Yb1/2Nb1/2)O3–0.53PbTiO3 (0.47PYN–0.53PT) single crystals near the morphotropic phase boundary (MPB) were investigated in the frequency range from 10 kHz to 1 MHz. Remarkable dielectric relaxation was observed along the polar 〈001〉 direction in the tetragonal 0.47PYN–0.53PT single crystal near the MPB. An increase of the dielectric relaxation time was observed as the Curie temperature was approached. The real part and the imaginary part of the complex relative permittivity obeys the Cole–Cole arc law, and the Debye type dielectric dispersion with the polydispersive type among the order-disorder type ferroelectrics was observed. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
77.80.B- Phase transitions and Curie point
77.22.Ch Permittivity (dielectric function)

Preparation and basic properties of ferroelectric thin films having a superlattice structure of 2 Bi3TiNbO9 units–1 Bi4Ti3O12 unit

Akira Shibuya, Shinichi Ikemori, W. B. Wu, Minoru Noda, and Masanori Okuyama

Appl. Phys. Lett. 83, 1411 (2003); http://dx.doi.org/10.1063/1.1604171 (3 pages) | Cited 7 times

Online Publication Date: 12 August 2003

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Natural-superlattice-structured ferroelectric thin films, Bi3TiNbO9–Bi4Ti3O12 (BTN–BIT), have been grown on Pt/TiO2/SiO2/Si and SrTiO3(001) single-crystal substrates by pulsed-laser deposition (PLD) using BTN–BIT (1 mol:1 mol) targets. BTN–BIT films show natural-superlattice peaks below 2θ=16° in x-ray diffraction patterns only when using an oxygen pressure of 0.05–0.07 Torr in the deposition. The c-axis lattice constant (8.300 nm) of BTN–BIT films suggests a natural superlattice structure consisting of iteration of two unit cells of Bi3TiNbO9 and one unit cell of Bi4Ti3O12. This 2–1 superlattice structure is different from that of BTN–BIT ceramics (2.909 nm), which is 1–1 superlattice. Natural-superlattice-structured BTN–BIT thin films having the 2–1 superlattice prepared at 550 °C exhibit superior ferroelectricity reflected by the value of 2Pr, which is 50 μC/cm2. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
68.65.Cd Superlattices
81.15.Fg Pulsed laser ablation deposition

Anomalous leakage current characteristics of Pt/(Ba0.75,Sr0.25)Ti1+yO3+z/Pt thin films grown by metalorganic chemical vapor deposition

S. Saha, D. Y. Kaufman, S. K. Streiffer, and O. Auciello

Appl. Phys. Lett. 83, 1414 (2003); http://dx.doi.org/10.1063/1.1604484 (3 pages) | Cited 18 times

Online Publication Date: 12 August 2003

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The leakage and dielectric properties of a thickness series (90–480 nm) of {100} fiber-textured metalorganic chemical vapor deposited (Ba0.75Sr0.25)Ti1+yO3+z (BST) thin films on Pt/SiO2/Si were investigated. The permittivity demonstrated a suppressed temperature and electric field response that transitioned to a more bulk-like response with increasing thickness, consistent with earlier observations. At low fields the leakage currents showed a weak-field dependence and a monotonic increase with increasing temperature. In contrast, a positive temperature coefficient of resistance (PTCR) was observed in the leakage current behavior at high-field. The PTCR behavior was more pronounced for thicker BST films. The observed effect is contrasted with PTCR behavior in bulk BaTiO3 ceramics. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.22.Ch Permittivity (dielectric function)
77.80.-e Ferroelectricity and antiferroelectricity

Atomistic structure of the Si(100)–SiO2 interface: A synthesis of experimental data

Angelo Bongiorno and Alfredo Pasquarello

Appl. Phys. Lett. 83, 1417 (2003); http://dx.doi.org/10.1063/1.1604470 (3 pages) | Cited 40 times

Online Publication Date: 12 August 2003

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We construct atomistic models of the Si(100)–SiO2 interface in accord with available experimental data. Combining classical and first-principles simulation methods, we generate transition structures from crystalline silicon to disordered SiO2. The generation procedure accounts for the density of coordination defects, the amount and location of partially oxidized Si atoms, and the mass density profile, as measured in electron-spin-resonance, photoemission, and x-ray reflectivity experiments, respectively. A variety of model interfaces are obtained, differing by the degree of order in the transition region. © 2003 American Institute of Physics.
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68.35.Ct Interface structure and roughness
79.60.Jv Interfaces; heterostructures; nanostructures
76.30.-v Electron paramagnetic resonance and relaxation
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