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18 Aug 2003

Volume 83, Issue 7, pp. 1283-1488

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 1462 (2003); http://dx.doi.org/10.1063/1.1601693 (3 pages)

X. Cartoixà, D. Z.-Y. Ting, and Y.-C. Chang
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Quasiballistic transport in HgTe quantum-well nanostructures

V. Daumer, I. Golombek, M. Gbordzoe, E. G. Novik, V. Hock, C. R. Becker, H. Buhmann, and L. W. Molenkamp

Appl. Phys. Lett. 83, 1376 (2003); http://dx.doi.org/10.1063/1.1602170 (3 pages) | Cited 12 times

Online Publication Date: 12 August 2003

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The transport properties of micrometer scale structures fabricated from high-mobility HgTe quantum wells have been investigated. A special photoresist and Ti masks were used, which allow for the fabrication of devices with characteristic dimensions down to 0.45 μm. Evidence that the transport properties are dominated by ballistic effects in these structures is presented. Monte Carlo simulations of semiclassical electron trajectories show good agreement with the experiment. © 2003 American Institute of Physics.
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73.63.Hs Quantum wells
81.07.St Quantum wells
81.16.Nd Micro- and nanolithography

Influence of carrier localization on modulation mechanism in photoreflectance of GaAsN and GaInAsN

R. Kudrawiec, G. Sȩk, J. Misiewicz, L. H. Li, and J. C. Harmand

Appl. Phys. Lett. 83, 1379 (2003); http://dx.doi.org/10.1063/1.1602164 (3 pages) | Cited 22 times

Online Publication Date: 12 August 2003

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GaAs0.98N0.02 and Ga0.95In0.05As0.98N0.02 layers have been investigated by photoreflectance (PR) and photoluminescence in 10–300 K temperature range. A decrease in PR signal has been found when the temperature was lowered. This effect is attributed to a weakening of modulation efficiency, which is induced by carrier localization that has been evidenced in low temperature photoluminescence. The Kramers–Kronig analysis is proposed as a simple method to determine the evolution of transition intensity with temperature when the change in the PR line shape can take place. © 2003 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors

Gain and temporal response of AlGaN solar-blind avalanche photodiodes: An ensemble Monte Carlo analysis

C. Sevik and C. Bulutay

Appl. Phys. Lett. 83, 1382 (2003); http://dx.doi.org/10.1063/1.1602163 (3 pages) | Cited 10 times

Online Publication Date: 12 August 2003

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Multiplication and temporal response characteristics of p+-n-n+ GaN and n-type Schottky Al0.4Ga0.6N avalanche photodiodes (APD) have been analyzed using the ensemble Monte Carlo method. Reasonable agreement is obtained with the published measurements for a GaN APD without any fitting parameters. In the case of AlGaN, the choice of a Schottky contact APD is seen to improve drastically the field confinement resulting in satisfactory gain characteristics. For the GaN APD, an underdamped step response is observed in the rising edge, and a Gaussian profile damping in the falling edge under an optical pulse with the switching speed degrading towards the gain region. In the AlGaN case, alloy scattering is seen to further slow down the temporal response while displacing the gain threshold to higher fields. © 2003 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors

Hydrogen passivation of nitrogen in SiC

A. Gali, P. Deák, N. T. Son, and E. Janzén

Appl. Phys. Lett. 83, 1385 (2003); http://dx.doi.org/10.1063/1.1604461 (3 pages) | Cited 5 times

Online Publication Date: 12 August 2003

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First-principles calculations carried out in 4H-SiC show that hydrogen may form stable complexes with substitutional nitrogen, passivating the shallow nitrogen donor. The complex is very stable with respect to isolated positive donors and negatively charged hydrogen interstitials, so reactivation is expected only at high temperature. The binding energy also increases the concentration of hydrogen, incorporated into 4H-SiC during growth or postgrowth hydrogenation. © 2003 American Institute of Physics.
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71.55.Ht Other nonmetals
73.20.Hb Impurity and defect levels; energy states of adsorbed species
81.65.Rv Passivation
71.15.Nc Total energy and cohesive energy calculations
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