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18 Aug 2003

Volume 83, Issue 7, pp. 1283-1488

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Appl. Phys. Lett. 83, 1462 (2003); http://dx.doi.org/10.1063/1.1601693 (3 pages)

X. Cartoixà, D. Z.-Y. Ting, and Y.-C. Chang
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Omnidirectional and compact guided light extraction from Archimedean photonic lattices

M. Rattier, H. Benisty, E. Schwoob, C. Weisbuch, T. F. Krauss, C. J. M. Smith, R. Houdré, and U. Oesterle

Appl. Phys. Lett. 83, 1283 (2003); http://dx.doi.org/10.1063/1.1600831 (3 pages) | Cited 37 times

Online Publication Date: 12 August 2003

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We address the issue of extracting light from a waveguide towards air in a compact way for randomly oriented guided waves. The goal is to enhance the extraction efficiency of light-emitting diodes while retaining planar processing. For incidence-angle-independent extraction, preferred lattice designs appear to possess a ring-shaped Fourier transform. We demonstrate this property for an Archimedean lattice. This system is the outer part of a resonant-cavity light-emitting diode. Data suggest that ∼40% extraction efficiency is at hand in a planar top-emitting device retaining its substrate. © 2003 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
85.60.Jb Light-emitting devices
42.50.-p Quantum optics
42.70.Qs Photonic bandgap materials
42.82.-m Integrated optics
42.30.Kq Fourier optics

Monolithically series-interconnected GaInAsSb/AlGaAsSb/GaSb thermophotovoltaic devices with an internal backsurface reflector formed by wafer bonding

C. A. Wang, R. K. Huang, D. A. Shiau, M. K. Connors, P. G. Murphy, P. W. O’Brien, A. C. Anderson, D. M. DePoy, G. Nichols, and M. N. Palmisiano

Appl. Phys. Lett. 83, 1286 (2003); http://dx.doi.org/10.1063/1.1602165 (3 pages) | Cited 11 times

Online Publication Date: 12 August 2003

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GaInAsSb/AlGaAsSb/GaSb thermophotovoltaic (TPV) cells were monolithically interconnected in series to build open-circuit voltage Voc. GaInAsSb epitaxial layers were transferred to GaAs by wafer bonding with SiOx/Ti/Au, which provides electrical isolation of individual cells and forms an internal backsurface reflector. This configuration is compatible with monolithic series interconnection of TPV cells; can mitigate the requirements of filters used for front-surface spectral control; and has the potential to improve TPV device performance. Wafer-bonded GaInAsSb TPV cells exhibit nearly linear voltage building. At a short-circuit current density of 0.4 A/cm2, Voc of a single TPV cell is 0.2 V, compared to 0.37 and 1.8 V for 2- and 10-junction series-interconnected TPV cells, respectively. © 2003 American Institute of Physics.
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84.60.Jt Photoelectric conversion

Pulse energy enhancement in passive Q-switching operation with a class of Nd:GdxY1−xVO4 crystals

Junhai Liu, Xianlin Meng, Zongshu Shao, Minhua Jiang, Bernd Ozygus, Adalbert Ding, and Horst Weber

Appl. Phys. Lett. 83, 1289 (2003); http://dx.doi.org/10.1063/1.1601673 (3 pages) | Cited 51 times

Online Publication Date: 12 August 2003

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Passive Q-switching operation with a class of Nd:GdxY1−xVO4 crystals has been demonstrated. Compared to Nd:YVO4 and Nd:GdVO4, the pulse energy produced with Nd:Gd0.64Y0.36VO4 under certain conditions was found to be enhanced by factors of 6.0 and 2.5, while the peak power enhanced by factors of 14.7 and 3.6, respectively. At the incident pump power of 9.6 W, 1.3 W of average output power was obtained, with the pulse energy, peak power, and pulse repetition frequency being 166 μJ, 24.5 kW, and 7.7 kHz, respectively. © 2003 American Institute of Physics.
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42.70.Hj Laser materials
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Ultrafast nonlinearity of antimony polyphosphate glasses

E. L. Falcão Filho, C. A. C. Bosco, G. S. Maciel, Cid B. de Araújo, L. H. Acioli, M. Nalin, and Y. Messaddeq

Appl. Phys. Lett. 83, 1292 (2003); http://dx.doi.org/10.1063/1.1601679 (3 pages) | Cited 9 times

Online Publication Date: 12 August 2003

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We report on the ultrafast nonlinearity of antimony polyphosphate glasses measured using the Kerr shutter technique. The nonlinear refractive index, n2, was (1.1±0.2)×10−14 cm2/W at 800 nm, and enhancement of n2 by ≈80% was observed by adding 10% of lead oxide in the glass composition. The full width at half-maximum of the third-order correlation signal was 150 fs, which implies a fast response of the samples (⩽100 fs). Nonlinear absorption was negligible in the range of intensities used. © 2003 American Institute of Physics.
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78.47.-p Spectroscopy of solid state dynamics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.70.Ce Glasses, quartz

Properties of 4-dicyanomethylene-2-methyl-6-(p-dimethyl-aminostyryl)-4H-pyran-doped Alq layers as optically pumped lasers

J. Jakabovič, O. Lengyel, J. Kováč, T. C. Wong, C. S. Lee, and S. T. Lee

Appl. Phys. Lett. 83, 1295 (2003); http://dx.doi.org/10.1063/1.1602153 (3 pages) | Cited 1 time

Online Publication Date: 12 August 2003

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The optical properties of tris-(8-hydroxyquinoline) aluminum (Alq) doped with 4-dicyanomethylene-2-methyl-6-(p-dimethyl-aminostyryl)-4H-pyran (DCM) in solutions and in solid films were studied by measuring the steady-state excitation and spontaneous emission spectra. The emission peak in the solid films shifted from 628 to 659 nm as the doping concentration of DCM changed from 0.9% to 11%. The optically pumped waveguide lasers were fabricated by coevaporation of Alq films with 1.3 wt % DCM onto gallium arsenide (GaAs) substrates using silicon dioxide (SiO2) and magnesium fluoride (MgF2) as cladding layers. Both types of waveguide laser structures showed optical confinement and simulated emission at a threshold pumping energy near 1.4 μJ. The result suggests a thin MgF2 may be used as a confinement layer that has the advantage of preparation by low-temperature evaporation. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes

Investigations on GaInNAsSb quinary alloy for 1.5 μm laser emission on GaAs

L. H. Li, V. Sallet, G. Patriarche, L. Largeau, S. Bouchoule, L. Travers, and J. C. Harmand

Appl. Phys. Lett. 83, 1298 (2003); http://dx.doi.org/10.1063/1.1601671 (3 pages) | Cited 36 times

Online Publication Date: 12 August 2003

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GaInNAsSb quantum wells grown by molecular-beam epitaxy on GaAs substrates were investigated. Intricate incorporation mechanisms of the constituents in this quinary alloy were seen. In highly strained indium-rich alloys, antimony incorporation is strongly reduced, and a beneficial surfactant effect is observed. Due to this effect, high structural quality is preserved even for an uncompensated 2.67% strained multiquantum-well structure. Narrow luminescence linewidth (35 meV) could be achieved near 1.55 μm wavelength with these quantum wells. Laser emission is demonstrated at 1.50 μm with threshold current density of 3.5 kA/cm2. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Controlled steady-state switching in optical bistability

Andy Brown, Amitabh Joshi, and Min Xiao

Appl. Phys. Lett. 83, 1301 (2003); http://dx.doi.org/10.1063/1.1600833 (3 pages) | Cited 13 times

Online Publication Date: 12 August 2003

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Optical switching has been achieved between two steady states of optical bistability generated in a system with three-level atoms inside an optical cavity. The optical power switching is controlled by adding short positive (switching up) or negative (switching down) pulses to the input intensity. The coupling laser beam in the three-level atomic system is used to control the threshold value and the width of the hysteresis cycle, which can adjust and optimize the optical switching process. © 2003 American Institute of Physics.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects

Tunable laser diodes by Stark effect

N. Le Thomas, N. T. Pelekanos, and Z. Hatzopoulos

Appl. Phys. Lett. 83, 1304 (2003); http://dx.doi.org/10.1063/1.1602561 (3 pages) | Cited 2 times

Online Publication Date: 12 August 2003

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We demonstrate wavelength tuning of a laser diode (LD) by the quantum-confined Stark effect. This is achieved by introducing tunneling barriers in the LD active region, as a result of which significant space-charge fields are generated during current injection, modulating the gain spectrum of the “lasing” quantum well. In such a “modified” InGaAs/AlGaAs LD, we observed up to 5-nm Stark-tuning of the lasing wavelength in the 900-nm spectral region. © 2003 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
78.67.De Quantum wells
78.20.Jq Electro-optical effects

Switchable optical polarizer based on electrochromism in stretch-aligned polyaniline

Peter Andersson, Magnus Berggren, and Thomas Kugler

Appl. Phys. Lett. 83, 1307 (2003); http://dx.doi.org/10.1063/1.1602556 (3 pages) | Cited 5 times

Online Publication Date: 12 August 2003

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We report on the polarizing electrochromic (EC) effect of a conjugated polymer. This has been achieved in a planar flexible electrochemical device cell comprised of a patterned stretch-aligned thin film of polyaniline and an electrolyte, all made on a polyethylene foil substrate. The resulting device exhibits polarized absorption characteristics, of a dichroic ratio of 4, that can be controlled by the voltage applied. Also, thin flexible EC polarizers have been realized by combining two stretch-aligned polyaniline films with orthogonal stretching direction. In the resulting EC polarizer the orientation of the polarized absorption can be switched between two orthogonal directions, depending on the voltage applied. © 2003 American Institute of Physics.
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42.79.Ci Filters, zone plates, and polarizers
78.20.Jq Electro-optical effects
42.70.Jk Polymers and organics

Curing temperature effects on liquid crystal gels

Fang Du and Shin-Tson Wu

Appl. Phys. Lett. 83, 1310 (2003); http://dx.doi.org/10.1063/1.1602152 (3 pages) | Cited 16 times

Online Publication Date: 12 August 2003

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The curing temperature is found to greatly affect the operating voltage, contrast ratio, hysteresis, and response time of the reversed-mode liquid crystal (LC) gels. For the gels using E48 LC host, the optimal curing temperature is around 40–50 °C. An LC gel with contrast ratio exceeds 2000:1 (at ∼2° collection angle), operating voltage lower than 7 Vrms, and response time of about 20 ms is demonstrated. Potential applications of such LC gels for optical switches, displays, and switchable polarizers are emphasized. © 2003 American Institute of Physics.
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82.70.Gg Gels and sols
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

Experimental and theoretical analysis of optically pumped semiconductor disk lasers

A. R. Zakharian, J. Hader, J. V. Moloney, S. W. Koch, P. Brick, and S. Lutgen

Appl. Phys. Lett. 83, 1313 (2003); http://dx.doi.org/10.1063/1.1601672 (3 pages) | Cited 26 times

Online Publication Date: 12 August 2003

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We describe the experimental cw power scaling of optically pumped semiconductor disk lasers OPS-DLs and give a detailed insight into the physical mechanism of this type of high-power surface-emitting semiconductor laser with external cavity. Minimizing the thermal resistance between active region and heat sink enables improved efficiency and gives access to high power and excellent beam quality of OPS-DL at 1000 nm. Results from initial numerical modeling are in good agreement with the experimental data, and show that thermal management is a critical parameter for the temperature-driven power shutoff in such devices. The computations are based on the macroscopic thermal transport, spatially resolved in both the radial and longitudinal directions, and coupled to the carrier density rate equations. A quantitative microscopic approach is used for the quantum-well gain and absorption dependence on wavelength, carrier density, and lattice temperature. The dependence of the computed output power on the substrate thickness and detuning are discussed. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Continuous wave 2.9 μm dysprosium-doped fluoride fiber laser

Stuart D. Jackson

Appl. Phys. Lett. 83, 1316 (2003); http://dx.doi.org/10.1063/1.1603353 (3 pages) | Cited 27 times

Online Publication Date: 12 August 2003

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Single-mode room-temperature cw laser emission on the 6H13/2→6H15/2 2.9 μm phonon terminated electronic transition of Dy3+ is demonstrated. The maximum output power of 0.275 W was generated at a slope efficiency of 4.5% (with respect to the absorbed pump power) when a Dy3+-doped ZBLAN fiber laser was tandem pumped with the ∼ 1100 nm output from a diode-cladding-pumped Yb3+-doped silica fiber laser. © 2003 American Institute of Physics.
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42.55.Wd Fiber lasers
42.60.By Design of specific laser systems

Electrical properties of p–n junctions based on superlattices of AlN/AlGa(In)N

V. Kuryatkov, K. Zhu, B. Borisov, A. Chandolu, Ìu. Gherasoiu, G. Kipshidze, S. N. G. Chu, M. Holtz, Yu. Kudryavtsev, R. Asomoza, S. Nikishin, and H. Temkin

Appl. Phys. Lett. 83, 1319 (2003); http://dx.doi.org/10.1063/1.1603333 (3 pages) | Cited 6 times

Online Publication Date: 12 August 2003

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Measurements of acceptor activation energy in p–n junctions based on superlattices of AlN (1.25 nm thick) and Al0.08Ga0.92(In)N (0.5 nm thick), with the average AlN content greater than 0.6, are reported. Structural characteristics of superlattices were determined using transmission electron microscopy and x-ray diffraction. p–n junctions in mesa-etched diodes exhibit low leakage current densities of 3×10−10 A/cm2 at near zero bias. Acceptor activation energy of 207±10 meV, obtained from the temperature dependence of the forward current, is very similar to that of uniform alloy of Al0.08Ga0.92N that constitutes the well material. The acceptor activation energy thus appears controlled by the well material and remains low despite high average AlN content and large band gap. © 2003 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.65.Cd Superlattices
68.37.Lp Transmission electron microscopy (TEM)

Ultrabroadband terahertz field detection by photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs

Tze-An Liu, Masahiko Tani, Makoto Nakajima, Masanori Hangyo, and Ci-Ling Pan

Appl. Phys. Lett. 83, 1322 (2003); http://dx.doi.org/10.1063/1.1604191 (3 pages) | Cited 18 times

Online Publication Date: 12 August 2003

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The photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs are demonstrated to have a useful bandwidth beyond 20 THz for a gating laser pulse width of 15 fs. The bandwidth and signal-to-noise ratio are compared with those of reference photoconductive antennas based on low-temperature grown GaAs. © 2003 American Institute of Physics.
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73.61.Ey III-V semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
84.40.Ba Antennas: theory, components and accessories
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
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