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18 Aug 2003

Volume 83, Issue 7, pp. 1283-1488

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 1462 (2003); http://dx.doi.org/10.1063/1.1601693 (3 pages)

X. Cartoixà, D. Z.-Y. Ting, and Y.-C. Chang
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Aggregate nitrogen in synthetic diamond

Karen M. McNamara

Appl. Phys. Lett. 83, 1325 (2003); http://dx.doi.org/10.1063/1.1347012 (3 pages) | Cited 6 times

Online Publication Date: 12 August 2003

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Nitrogen is a commonly observed impurity in natural and synthetic diamond, yet there are still many questions in regard to its incorporation in the material. In all three common forms of diamond: natural, high-pressure high-temperature synthetic, and chemical vapor deposition (CVD) diamond; nitrogen has been observed in substitutional lattice sites. This configuration results in an unpaired electron which gives rise to an easily observed paramagnetic resonance. In addition, aggregate forms of nitrogen, such as A-center (paired nitrogen), B-center, and platelet-related nitrogen are the predominant form of nitrogen observed in natural Type Ia diamonds. These aggregate forms have yet to be observed unambiguously in any form of synthetic diamond. Here, we show evidence, based on quantitative secondary ion mass spectrometry and electron paramagnetic resonance spectroscopy measurements, of nonparamagnetic nitrogen in some CVD diamond films. Further examination of the symmetry-disallowed one-phonon absorption in the infrared spectra of these films indicates the presence of aggregate nitrogen in these materials. © 2003 American Institute of Physics.
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81.05.U- Carbon/carbon-based materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.Nk Insulators
71.55.Ht Other nonmetals
76.30.Lh Other ions and impurities
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
78.30.Hv Other nonmetallic inorganics

Effect of ordered arrays of native defects on the crystal structure of In- and Ga-rich Cu-ternaries

C. Rincón, S. M. Wasim, G. Marín, J. M. Delgado, and J. Contreras

Appl. Phys. Lett. 83, 1328 (2003); http://dx.doi.org/10.1063/1.1600516 (3 pages) | Cited 6 times

Online Publication Date: 12 August 2003

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A comparative study of the unit cell parameters a and c, and volume V of the chalcopyrite-related of In- and Ga-rich ordered defect compounds of the ternary systems Cu-In-Se, Cu-In-Te, Cu-Ga-Se, and Cu-Ga-Te is presented. It is observed that these parameters decrease in the sequence 1:1:2→3:5:9→5:9:16→2:4:7→1:3:5→1:5:8. This behavior is attributed to the presence of arrays of ordered defects in the crystal lattice of these compounds. It is also found that values of a, c, and V in these systems vary linearly with the fraction m of [2 VCu−1+(In,Ga)Cu+2] defect pair for each unit of Cu(In,Ga)(Se2,Te2). © 2003 American Institute of Physics.
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61.66.Fn Inorganic compounds
81.05.Hd Other semiconductors
81.10.Fq Growth from melts; zone melting and refining
61.72.-y Defects and impurities in crystals; microstructure

Two-dimensional tunable photonic crystal formed in a liquid-crystal/polymer composite: Threshold behavior and morphology

Michael J. Escuti, Jun Qi, and Gregory P. Crawford

Appl. Phys. Lett. 83, 1331 (2003); http://dx.doi.org/10.1063/1.1600533 (3 pages) | Cited 43 times

Online Publication Date: 12 August 2003

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A two-dimensional (2D) transverse square lattice is formed using holographic methods in a liquid-crystal/polymer composite through a photoinduced diffusion process. The polymer morphology is investigated using scanning electron microscopy. The kinetics of formation is described within the framework of a 2D diffusion model, and a simple phenomenological description captures the nature of the Freedericksz transition, allowing the estimation of the surface anchoring strength W ≈ 3×10−4 J/m2. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.70.Df Liquid crystals
61.30.Pq Microconfined liquid crystals: droplets, cylinders, randomly confined liquid crystals, polymer dispersed liquid crystals, and porous systems
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

Influence of Si substrate orientation on stress development in Pd silicide films grown by solid-state reaction

P. Gergaud, M. Megdiche, O. Thomas, and B. Chenevier

Appl. Phys. Lett. 83, 1334 (2003); http://dx.doi.org/10.1063/1.1601301 (3 pages) | Cited 8 times

Online Publication Date: 12 August 2003

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In situ real-time measurements of stress are performed during solid-state reaction of a palladium thin film with Si(001) or Si(111) single crystals. The stress in Pd2Si is compressive in both cases at variance with the sign of epitaxial misfit. A large difference in stress relaxation kinetics between fiber textured [on Si(001)] and epitaxial [on Si(111)] Pd2Si films is evidenced. This difference is correlated with a considerable variation in stress buildup during silicide growth. The microstructure of the growing phase is thus a key parameter for stress development during solid-state reaction. © 2003 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

Optically tunable mechanics of microlevers

M. Vogel, C. Mooser, K. Karrai, and R. J. Warburton

Appl. Phys. Lett. 83, 1337 (2003); http://dx.doi.org/10.1063/1.1600513 (3 pages) | Cited 22 times

Online Publication Date: 12 August 2003

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We show how the mechanical rigidity of a slightly detuned miniature Fabry–Pérot cavity can be modified with light. We use a microcavity in which one of the mirrors is a soft compliant microlever optimized to detect bolometric forces. The static compliance can either be decreased to zero or increased considerably depending on the detuning of the light with respect to the cavity resonance. © 2003 American Institute of Physics.
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07.10.Cm Micromechanical devices and systems
37.10.Vz Mechanical effects of light on atoms, molecules, and ions
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Direct access to the dispersion relations of multiple anisotropic surface acoustic modes by Fourier image analysis

Y. Sugawara, O. B. Wright, and O. Matsuda

Appl. Phys. Lett. 83, 1340 (2003); http://dx.doi.org/10.1063/1.1602151 (3 pages) | Cited 9 times

Online Publication Date: 12 August 2003

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We present a method based on a combination of temporal and spatial Fourier image analysis, involving the incorporation of a time-reversed acoustic propagation component, that can be used to obtain the angular dispersion or general dispersion relations of multiple surface acoustic modes excited by a localized pulsed source. The method is applied to the study of acoustic propagation at the surface of the highly anisotropic single-crystal TeO2 coated with a thin gold film. © 2003 American Institute of Physics.
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68.35.Iv Acoustical properties

Optimized annealing conditions identified by analysis of radiative recombination in dilute Ga(As,N)

Gregor Mussler, Lutz Däweritz, Klaus H. Ploog, Jens W. Tomm, and Vadim Talalaev

Appl. Phys. Lett. 83, 1343 (2003); http://dx.doi.org/10.1063/1.1602576 (3 pages) | Cited 10 times

Online Publication Date: 12 August 2003

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Rapid thermal annealing parameters for Ga(As,N) with 0.5% N are experimentally analyzed. The criteria taken into account are the relative intensity of the observed deep level photoluminescence, the intensity of edge luminescence contributions, and the luminescence decay time. For a 60 s treatment, we find an optimum annealing temperature of 850 °C with a clear tendency of lower optimum annealing temperatures for increasing N contents. Luminescence decay times of up to 400 ps for recombination of delocalized carrier pairs match well the lifetime region specific for direct III–V semiconductors and provide clear evidence of the type-I band alignment in the Ga(As,N) samples investigated. © 2003 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
71.55.Eq III-V semiconductors

Enhanced green emission in ZnGa2O4:Mn thin film phosphors by Se doping

Jung Hyun Jeong, Byung Kee Moon, Hyo Jin Seo, Jong Seong Bae, Soung-Soo Yi, Ill Won Kim, and Hong Lee Park

Appl. Phys. Lett. 83, 1346 (2003); http://dx.doi.org/10.1063/1.1602169 (3 pages) | Cited 7 times

Online Publication Date: 12 August 2003

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Mn-doped ZnGa2O4−xSex thin film phosphors have been grown using pulsed-laser ablation under various growth conditions. The structural characterization was carried out on a series of ZnGa2O4−xSex:Mn2+ films grown on MgO(100) substrates using Zn-rich ceramic targets. Zn-rich ceramic targets have been prepared to compensate the vaporization loss of Zn. The oxygen pressure was fixed at 100 mTorr and substrate temperatures were varied from 500 to 700 °C. The luminescence results indicated that MgO (100) is one of the most promised substrates for the growth of high-quality ZnGa2O4−xSex:Mn2+ films. In particular, the incorporation of Se into the ZnGa2O4 lattice induced a remarkable increase of photoluminescence. The highest green emission intensity was observed with ZnGa2O3.925Se0.075:Mn2+ films whose brightness was increased by a factor of 3.1 in comparison with that of ZnGa2O4:Mn2+ films. This phosphor may promise for application to the flat panel displays. © 2003 American Institute of Physics.
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78.66.Li Other semiconductors
78.55.Hx Other solid inorganic materials
81.05.Hd Other semiconductors
81.15.Fg Pulsed laser ablation deposition
61.72.up Other materials

Effect of the InAlGaP matrix on the growth of self-assembled InP quantum dots by metalorganic chemical vapor deposition

X. B. Zhang, R. D. Heller, M. S. Noh, R. D. Dupuis, G. Walter, and N. Holonyak

Appl. Phys. Lett. 83, 1349 (2003); http://dx.doi.org/10.1063/1.1600825 (3 pages) | Cited 9 times

Online Publication Date: 12 August 2003

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InP self-assembled quantum dots (QDs) were deposited on lattice-matched In0.5(AlxGa1−x)0.5P matrices grown on (001) GaAs substrates by using metalorganic chemical vapor deposition. We found that the Al concentration in the matrix has a great influence on the size of the InP QDs. For a fixed volume of deposited InP, the size of the QDs decreases with an increase in the Al concentration in the In0.5(AlxGa1−x)0.5P matrix. We suggest that this variation in QD size is a result of an alloying effect caused by atomic intermixing between the InP dots and the underlying matrix material. The stronger intermixing between InP and the Ga-rich matrices (relative to Al-rich matrices) results in larger QDs on these surfaces. The intermixing effect, as expected, reduces the lattice mismatch and, as a result, leads to a larger critical thickness of the wetting layer when the growth temperature is higher. The growth of InP QDs on an InAlP matrix with a thin GaP intermediate buffer layer also supports the interpretation as an intermixing effect. © 2003 American Institute of Physics.
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81.07.Ta Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.16.Dn Self-assembly

Shear-induced metallization of triamino-trinitrobenzene crystals

M. Riad Manaa

Appl. Phys. Lett. 83, 1352 (2003); http://dx.doi.org/10.1063/1.1603351 (3 pages) | Cited 4 times

Online Publication Date: 12 August 2003

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I report first principle density-functional calculations that demonstrate an insulator-metal transition based on the bending of covalent bonds in 1,3,5-triamino-2,4,6-trinitrobenzene, an organic molecular crystal. The critical shear angle responsible for the vanishing of the energy band gap is achieved at near constant volume via a 55° bending of the nitro group out of the molecular plane, accompanied by 0.1 Å stretch in the N–O bonds. The energy needed for inducing this motion is of the same order of magnitude as the energy band gap. © 2003 American Institute of Physics.
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71.30.+h Metal-insulator transitions and other electronic transitions
71.20.Rv Polymers and organic compounds
62.20.F- Deformation and plasticity
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
61.50.Lt Crystal binding; cohesive energy

A simple model for the prediction of thermal conductivity in pure and doped insulating crystals

Romain Gaumé, Bruno Viana, Daniel Vivien, Jean-Paul Roger, and Danièle Fournier

Appl. Phys. Lett. 83, 1355 (2003); http://dx.doi.org/10.1063/1.1601676 (3 pages) | Cited 71 times

Online Publication Date: 12 August 2003

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We present a simplified approach to evaluate the thermal conductivity of insulating crystals, taking into account chemical and structural properties. We complete the thermal conductivity evaluation in the case of point defects encountered in luminescent materials. Thermal conductivity coefficients have been determined by photothermal experiments and are in good agreement with the predicted values in Yb:Y3Al5O12 and Yb:Gd3Ga5O12 solid-state lasers. © 2003 American Institute of Physics.
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66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
61.72.J- Point defects and defect clusters
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Brillouin scattering study on relaxor ferroelectric Pb(Zn1/3Nb2/3)O3

Yoshihiro Gorouya, Yuhji Tsujimi, Makoto Iwata, and Toshirou Yagi

Appl. Phys. Lett. 83, 1358 (2003); http://dx.doi.org/10.1063/1.1603340 (3 pages) | Cited 20 times

Online Publication Date: 12 August 2003

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The 90° Brillouin scattering experiment has been performed on a Pb(Zn1/3Nb2/3)O3 single crystal. The frequency shift and linewidth of the c33 pure longitudinal acoustic mode and the c44 pure transverse mode show bending anomalies near Tm = 397 K, at which the low-frequency dielectric constant ϵ has a maximum value. In addition to the acoustic modes, a relaxational mode is found in the form of a central peak. The relaxation time τ of the mode has a temperature dependence similar to that of ϵ and shows a broad peak anomaly around Tm. The temperature dependence of τ can be analyzed by a modified superparaelectric model. © 2003 American Institute of Physics.
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78.35.+c Brillouin and Rayleigh scattering; other light scattering
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
63.20.-e Phonons in crystal lattices
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Surface reconstructions of In-enriched InGaAs alloys

J. Mirecki Millunchick, A. Riposan, B. J. Dall, Chris Pearson, and B. G. Orr

Appl. Phys. Lett. 83, 1361 (2003); http://dx.doi.org/10.1063/1.1602557 (3 pages) | Cited 14 times

Online Publication Date: 12 August 2003

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The atomic structure of In0.81Ga0.19As/InP alloy layers was examined using in situ scanning tunneling microscopy. The (2×3) reconstruction observed during growth by reflection high-energy electron diffraction represents a combination of surface structures, including a β2(2×4) commonly observed on GaAs(001) and InAs(001) surfaces, and a disordered (4×3) that is unique to alloy systems. The proposed (4×3) structure is comprised of both anion and cation dimers. Empty and filled states images show that the features reverse contrast with sample bias, in agreement with the model. © 2003 American Institute of Physics.
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68.47.Fg Semiconductor surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Self-assembled nanostructures through wavelength-controlled spinodal decomposition

P. Alex Greaney, D. C. Chrzan, B. M. Clemens, and W. D. Nix

Appl. Phys. Lett. 83, 1364 (2003); http://dx.doi.org/10.1063/1.1602581 (3 pages) | Cited 3 times

Online Publication Date: 12 August 2003

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The self-assembly of nanostructured materials through controlled wavelength spinodal decomposition is explored using a simple model. The model assumes that a homogeneous alloy is deposited on a rigid, periodically strained substrate. A linear stability analysis establishes that the film will undergo spinodal decomposition with the dominant wavelength determined by the periodicity of the substrate strain. © 2003 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
64.75.-g Phase equilibria

Formation of nanoscale voids and related metallic impurity gettering in high-energy ion-implanted and annealed epitaxial silicon

A. Kvit, R. A. Yankov, G. Duscher, G. Rozgonyi, and J. M. Glasko

Appl. Phys. Lett. 83, 1367 (2003); http://dx.doi.org/10.1063/1.1601678 (3 pages) | Cited 6 times

Online Publication Date: 12 August 2003

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We have examined nanovoid formation, Fe gettering, and Fe clustering phenomena occurring in epitaxial silicon layers implanted with MeV Si ions. Insights into these phenomena as a function of depth have been gained from detailed analyses by Z-contrast imaging in conjunction with electron energy-loss spectroscopy. Our work has shown at the nanoscale structural and chemical levels that the defects produced by MeV self-ion implantation between the surface and the ion projected range Rp (i.e., in the so-called Rp/2 region) are voids, which provide extremely efficient and aggressive metallic impurity gettering. It has been proposed that the gettering does not occur via chemisorption or silicidation layering on the internal surface of the void walls, as in the well-known case of helium-induced cavities, but rather proceeds in a mode of metal–metal atom binding in the vicinity of the Rp/2 voids. © 2003 American Institute of Physics.
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61.72.uf Ge and Si
61.82.Fk Semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.80.Jh Ion radiation effects
61.72.Yx Interaction between different crystal defects; gettering effect
79.20.Uv Electron energy loss spectroscopy
68.37.Lp Transmission electron microscopy (TEM)

On mechanical properties of nanostructured meso-porous silicon

Ch. Populaire, B. Remaki, V. Lysenko, D. Barbier, H. Artmann, and T. Pannek

Appl. Phys. Lett. 83, 1370 (2003); http://dx.doi.org/10.1063/1.1603336 (3 pages) | Cited 15 times

Online Publication Date: 12 August 2003

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Mechanical properties of meso-porous silicon are studied using topographic measurements and finite element simulations. Our approach is based on an original analysis of the strain at the free surface of porous silicon tub embedded in bulk Si regions allowing the determination of the Young’s modulus of the porous layers. In particular, the internal stress in the porous Si region is evaluated from the corresponding deformation of the monocrystalline Si adjacent region which mechanical parameters are well known. Moreover, a mechanical anisotropy of the columnar nanostructured porous Si is brought to the fore from the characteristic shape of the strained porous layer profile. Moderately oxidized, 70% in porosity, porous silicon patterns were investigated. Correlation of our measurements with x-ray data reported early in literature shows the macroscopic strain being close to the silicon lattice relative increase revealing an elastic deformation regime. The porous layers exhibit an unexpected low and strongly anisotropic Young’s modulus for all samples. Young’s modulus values of 1.5 and 0.44 GPa are found in parallel and perpendicular directions of the columnar structure, respectively. Finally, a phenomenological model for such a mechanical behavior taking into account porosity and percolation strength factor of the randomly arranged as-prepared and partially oxidized porous Si nanostructures is proposed. © 2003 American Institute of Physics.
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81.40.Jj Elasticity and anelasticity, stress-strain relations
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
62.20.D- Elasticity
68.47.Fg Semiconductor surfaces
61.43.Gt Powders, porous materials
61.46.-w Structure of nanoscale materials

Te-free, Sb-based phase-change materials for high-speed rewritable optical recording

L. van Pieterson, M. van Schijndel, J. C. N. Rijpers, and M. Kaiser

Appl. Phys. Lett. 83, 1373 (2003); http://dx.doi.org/10.1063/1.1604172 (3 pages) | Cited 45 times

Online Publication Date: 12 August 2003

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High-speed rewritable optical disks based on conventional (eutectic) Sb–Te phase-change materials have low archival life stability and high media noise. We propose Te-free, Sb-based phase-change materials for recording at linear velocities over 28 m/s. These materials combine good optical contrast, rapid crystallization, and high amorphous phase stability. © 2003 American Institute of Physics.
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42.79.Vb Optical storage systems, optical disks
68.37.Lp Transmission electron microscopy (TEM)
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