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25 Aug 2003

Volume 83, Issue 8, pp. 1497-1679

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 1671 (2003); http://dx.doi.org/10.1063/1.1604161 (3 pages)

Wenyi Cai, Christopher F. Powell, Yong Yue, Suresh Narayanan, Jin Wang, Mark W. Tate, Matthew J. Renzi, Alper Ercan, Ernest Fontes, and Sol M. Gruner
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High-frequency, high-sensitivity acoustic sensor implemented on ALN/Si substrate

C. Caliendo and P. Imperatori

Appl. Phys. Lett. 83, 1641 (2003); http://dx.doi.org/10.1063/1.1604482 (3 pages) | Cited 9 times

Online Publication Date: 19 August 2003

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AlN films, 1.6–6.3 μm thick, were sputtered at 200 °C on Si(100) and Si(111) substrates. The films were crack-free, uniform, and c-axis oriented. The experimental phase velocities of surface acoustic waves (SAW) propagating in the AlN/Si structures were estimated and showed only a small discrepancy (20–40 m/s) compared to the calculated theoretical values. A SAW resonator (SAWR)-based chemical sensor, operating at about 700 MHz, was implemented on AlN/Si. The SAWR surface was covered with a polymer film sensitive to relative humidity (RH) changes, already tested for RH sensing in previous works on SAW delay lines implemented on AlN/Si and ZnO/Si and operating at about 130 MHz. The RH mass sensitivity and the detection limit of the SAWR sensor improved by 38% and by one order of magnitude, respectively, compared to the delay line-based sensors previously tested. © 2003 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.07.Vx Hygrometers; hygrometry
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
68.35.Iv Acoustical properties
73.61.Ey III-V semiconductors
81.15.Cd Deposition by sputtering
43.58.Wc Electrical and mechanical oscillators

H2O effect on the stability of organic thin-film field-effect transistors

Yong Qiu, Yuanchuan Hu, Guifang Dong, Liduo Wang, Junfeng Xie, and Yaning Ma

Appl. Phys. Lett. 83, 1644 (2003); http://dx.doi.org/10.1063/1.1604193 (3 pages) | Cited 119 times

Online Publication Date: 19 August 2003

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Degradation of organic thin-film field-effect transistors (OTFTs) with pentacene as the active material has been studied. It was found that the field-effect mobility of the device decreased by 30% and the on/off current ratio decreased to one fifth after the OTFTs had been stored in atmosphere for 500 h. Through surface morphology analysis by atomic force microscopy and absorption analysis by infrared spectroscopy, it was found that the adsorption of H2O on the pentacene layer was the main reason for the degradation. Remarkable improvement in the device performance was achieved by device encapsulation with UV curable resin. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
73.61.Ph Polymers; organic compounds
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.66.Qn Polymers; organic compounds
78.30.Jw Organic compounds, polymers

Dynamic recovery of negative bias temperature instability in p-type metal–oxide–semiconductor field-effect transistors

M. Ershov, S. Saxena, H. Karbasi, S. Winters, S. Minehane, J. Babcock, R. Lindley, P. Clifton, M. Redford, and A. Shibkov

Appl. Phys. Lett. 83, 1647 (2003); http://dx.doi.org/10.1063/1.1604480 (3 pages) | Cited 49 times

Online Publication Date: 19 August 2003

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An unexpected physical phenomenon—dynamic recovery of negative bias temperature instability (NBTI)—is reported. NBTI degradation in p-type metal–oxide–semiconductor field-effect transistors is significantly (by ∼40%) reduced after stress interruption. NBTI recovery dynamics includes a very fast transient (seconds time scale) followed by a slow (tens of minutes) transient, which tends to saturate. Under subsequent application of stress bias, the degradation quickly returns to its previous state. Thus, apparent NBTI degradation includes permanent and reversible components. NBTI degradation and device lifetime depend strongly on the measurement procedure and equipment due to these relaxation phenomena, which should be taken into account in analyzing the results of NBTI measurements. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices

Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

J. A. Mittereder, S. C. Binari, P. B. Klein, J. A. Roussos, D. S. Katzer, D. F. Storm, D. D. Koleske, A. E. Wickenden, and R. L. Henry

Appl. Phys. Lett. 83, 1650 (2003); http://dx.doi.org/10.1063/1.1604472 (3 pages) | Cited 21 times

Online Publication Date: 19 August 2003

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Current collapse is observed to be induced in AlGaN/GaN high-electron-mobility transistors as a result of short-term bias stress. This effect was seen in devices grown by both metalorganic chemical vapor deposition (MOCVD) and molecular-beam epitaxy (MBE). The induced collapse appears to be permanent and can be reversed by SiN passivation. The traps responsible for the collapse have been studied by photoionization spectroscopy. For the MOCVD-grown devices, the same traps cause the collapse in both unstressed and stressed devices. These effects are thought to result from hot-carrier damage during stress.
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85.30.Tv Field effect devices
73.61.Ey III-V semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species
81.65.Rv Passivation

Ultrathin silicon-on-insulator vertical tunneling transistor

A. Zaslavsky, C. Aydin, S. Luryi, S. Cristoloveanu, D. Mariolle, D. Fraboulet, and S. Deleonibus

Appl. Phys. Lett. 83, 1653 (2003); http://dx.doi.org/10.1063/1.1600832 (3 pages) | Cited 8 times

Online Publication Date: 19 August 2003

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We have fabricated silicon-on-insulator (SOI) transistors with an ultrathin Si channel of ∼5 nm, tunneling gate oxide of ∼1 nm, and 100 nm gate length. In addition to good transistor characteristics, these same devices exhibit additional functionality at low temperature. The drain current ID exhibits steps near the turn-on threshold voltage as a function of the backgate VBG bias on the substrate. When operated as a gate-controlled tunneling device, with source shorted to drain and IG originating from tunneling from the gate to the channel, we observe structure in the IG(VBG) due to resonant tunneling into the quantized channel subbands. In the future, as SOI device fabrication improves and the buried oxide thickness is reduced, these quantum effects will become stronger and appear at lower VBG, offering the prospect of ultralarge scale integration-compatible devices with standard transistor operation or quantum functionality depending on the electrode biasing. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
85.35.Ds Quantum interference devices

Sodium stearate, an effective amphiphilic molecule buffer material between organic and metal layers in organic light-emitting devices

Y. Q. Zhan, Z. H. Xiong, H. Z. Shi, S. T. Zhang, Z. Xu, G. Y. Zhong, J. He, J. M. Zhao, Z. J. Wang, E. Obbard, H. J. Ding, X. J. Wang, X. M. Ding, W. Huang, and X. Y. Hou

Appl. Phys. Lett. 83, 1656 (2003); http://dx.doi.org/10.1063/1.1601675 (3 pages) | Cited 21 times

Online Publication Date: 19 August 2003

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Tris (8-hydroxyquinoline) aluminum (Alq3)-based organic light-emitting devices using an amphiphilic molecule sodium stearate (NaSt) layer between aluminum (Al) cathode and Alq3 have been fabricated. By comparing the devices with those containing a LiF buffer layer, the results demonstrate that both have almost the same high electroluminescent (EL) brightness but the former is more stable. The amphiphilic property of NaSt is considered as the main reason for this enhancement. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
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