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25 Aug 2003

Volume 83, Issue 8, pp. 1497-1679

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 1671 (2003); http://dx.doi.org/10.1063/1.1604161 (3 pages)

Wenyi Cai, Christopher F. Powell, Yong Yue, Suresh Narayanan, Jin Wang, Mark W. Tate, Matthew J. Renzi, Alper Ercan, Ernest Fontes, and Sol M. Gruner
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Spectroscopic ellipsometry study of epitaxially grown Pb(Mg1/3Nb2/3)O3–PbTiO3/MgO/TiN/Si heterostructures

W. S. Tsang, K. Y. Chan, C. L. Mak, and K. H. Wong

Appl. Phys. Lett. 83, 1599 (2003); http://dx.doi.org/10.1063/1.1603339 (3 pages) | Cited 14 times

Online Publication Date: 19 August 2003

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0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 (PMN–PT) thin films have been grown on MgO/TiN-buffered Si(001) substrates using pulsed laser deposition. Their structural properties and surface morphology were examined by x-ray diffraction and scanning electron microscopy, respectively. All PMN–PT films grown at 670 °C show a cube-on-cube epitaxial relationship of PMN–PT(100)∥MgO(100)∥TiN(100)∥Si(100). Discernable interfaces between layers in the heterostructures and crack-free surfaces are evident. A spectroscopic ellipsometer was used to study the optical characteristics of the films. It was revealed that the refractive index of the PMN–PT is ∼2.50 as measured at 635 nm. This value is only slightly less than that of the PMN–PT single crystal of 2.60. Our results suggest that the PMN–PT/MgO/TiN/Si heterostructure has an excellent potential for use in integrated optical waveguide devices. © 2003 American Institute of Physics.
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78.66.Nk Insulators
68.35.Ct Interface structure and roughness
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Significant changes in the ferroelectric properties of BiFeO3 modified SrBi2Ta2O9

A. Srinivas, Dong-Wan Kim, and Kug Sun Hong

Appl. Phys. Lett. 83, 1602 (2003); http://dx.doi.org/10.1063/1.1604483 (3 pages) | Cited 6 times

Online Publication Date: 19 August 2003

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The solid solution of BiFeO3 (BF)–SrBi2Ta2O9 (SBT) prepared at a concentration of 1:1 ratio, shows significant changes in the structure and dielectric properties. The obtained compound although similar to a three-layered Aurivillius phase, is noticeably a Bi and oxygen deficient SBT phase. Due to this, the unit cell shows a subtle decrease in its volume and the dielectric properties show a decline. The layered perovskite structure sustains the strain associated with the loss of Bi and oxygen. SrBi3Ta2FeO12 has been synthesized by solid-state route and the single phase was confirmed by x-ray diffraction. The Curie temperature shows a marginal increase (an increase of 20 °C) compared to that of SBT. Polarization versus electric measurements show a slim hysteresis loop with a Pmax of 4.3 μC/cm2. The electromechanical coupling coefficient KP values are evaluated from the resonance and antiresonance measurements. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.80.B- Phase transitions and Curie point
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.22.Ej Polarization and depolarization
77.22.Gm Dielectric loss and relaxation
61.66.Fn Inorganic compounds
61.50.Lt Crystal binding; cohesive energy
77.22.Ch Permittivity (dielectric function)
77.65.-j Piezoelectricity and electromechanical effects

Broadband dielectric spectroscopy of (1−x)BiScO3–xPbTiO3 piezoelectrics

V. Porokhonskyy, S. Kamba, A. Pashkin, M. Savinov, J. Petzelt, R. E. Eitel, and C. A. Randall

Appl. Phys. Lett. 83, 1605 (2003); http://dx.doi.org/10.1063/1.1604945 (3 pages) | Cited 14 times

Online Publication Date: 19 August 2003

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Dielectric spectra of high-temperature piezoelectric (1−x)BiScO3–xPbTiO3 of composition near the morphotropic phase boundary (x ≅ 0.64) were investigated in the frequency range of 100 Hz–1 THz at temperatures between 10 and 900 K. Below the ferroelectric phase transition Tc ≅ 700 K, in addition to polar phonons, two other polarization mechanisms were detected: one, centered in the 100 MHz–1 GHz range probably caused by sound generation due to ferroelectric-ferroelastic domain wall motion; another evidences dynamic disorder of some ions. The former process, characterized by the temperature-independent mean relaxation time, vanishes below ∼ 250 K. The latter mechanism, caused by compositional disorder, results in the nearly frequency-independent losses (1/f noise) at low temperatures. © 2003 American Institute of Physics.
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77.65.-j Piezoelectricity and electromechanical effects
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
77.80.B- Phase transitions and Curie point
77.80.Dj Domain structure; hysteresis
62.20.D- Elasticity

Effect of external mechanical constraints on the phase diagram of epitaxial PbZr1−xTixO3 thin films—thermodynamic calculations and phase-field simulations

Y. L. Li, S. Choudhury, Z. K. Liu, and L. Q. Chen

Appl. Phys. Lett. 83, 1608 (2003); http://dx.doi.org/10.1063/1.1600824 (3 pages) | Cited 34 times

Online Publication Date: 19 August 2003

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The phase diagram of a PbZr1−xTixO3 (PZT) film constrained by a much thicker substrate was studied using both thermodynamic calculations and phase-field approach. It was found that the ferroelectric transition temperature is increased with substrate constraint regardless of the nature of the constraint, i.e., tensile or compressive. The maximum increase in the transition temperature occurs near x = 0.5, and the morphotropic phase boundary is shifted considerably by the substrate constraint. It is shown that the orthorhombic phase (∣P1∣ = ∣P2∣ ≠ 0, P3 = 0) that does not exist in the bulk becomes stable under a tensile constraint, and the rhombohedral phase (∣P1∣ = ∣P2∣ = ∣P3∣ ≠ 0) in the bulk is distorted in the constrained film, i.e., ∣P1∣ = ∣P2∣ ≠ 0, ∣P3∣ ≠ 0. The phase diagrams obtained by the phase-field approach indicated that the stability region for the tetragonal phase is much wider than that obtained from the thermodynamic calculations assuming a single-domain, especially under tensile substrate constraint. The discrepancy between the two methods becomes larger as substrate constraint changes from compressive to tensile, implying that thermodynamic calculations are unreliable for constructing stability diagram of PZT, particularly under a tensile constraint. © 2003 American Institute of Physics.
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68.55.Nq Composition and phase identification
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point

Temperature- and field-dependent leakage current of Pt/(Ba0.7Sr0.3)TiO3 interface

Hao Yang, Bin Chen, Kun Tao, Xianggang Qiu, Bo Xu, and Bairu Zhao

Appl. Phys. Lett. 83, 1611 (2003); http://dx.doi.org/10.1063/1.1604181 (3 pages) | Cited 12 times

Online Publication Date: 19 August 2003

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Pt/(Ba0.7Sr0.3)TiO3(BST)/YBa2Cu3O7−x(YBCO) capacitors on SrTiO3 substrates were fabricated. The temperature and field dependence of the leakage current of Pt/BST interface were studied in the temperature range from 100 K to 320 K and in an electric field up to 3 MV/cm. For a middle electric field (<1 MV/cm), the leakage current shows space-charge-limited-current behavior in the temperature range from 100 K to 200 K. In the case of a high electric field (>1.8 MV/cm), the leakage mechanism is governed by the Fowler–Nordheim tunneling in the whole measured temperature range. © 2003 American Institute of Physics.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors
73.50.Fq High-field and nonlinear effects
73.40.Gk Tunneling

Dielectric and piezoelectric properties of relaxor Pb(Sc1/2Nb1/2)O3 thin films

B. J. Kuh, W. K. Choo, K. Brinkman, D. Damjanovic, and N. Setter

Appl. Phys. Lett. 83, 1614 (2003); http://dx.doi.org/10.1063/1.1604189 (3 pages) | Cited 6 times

Online Publication Date: 19 August 2003

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Pure perovskite Pb(Sc1/2Nb1/2)O3 thin films without pyrochlore phase were prepared by the sol–gel method on TiO2/Pt/TiO2/SiO2/Si substrates. Films exhibited (111) preferred orientation and columnar microstructure. Diffuse phase transitions with permittivity maximum decreasing in value and shifting toward higher temperature with increasing frequency and slim polarization-electric field hysteresis loops typical for relaxors were observed. The maximum field-induced piezoelectric d33 coefficient measured with ac electric field of 14 kV/cm was 58 pm/V. The d33–dc electric field relation is virtually hysteresis free. © 2003 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Bn Piezoelectric and electrostrictive constants
68.55.-a Thin film structure and morphology
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
77.80.B- Phase transitions and Curie point
77.80.Dj Domain structure; hysteresis
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
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