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25 Aug 2003

Volume 83, Issue 8, pp. 1497-1679

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 1671 (2003); http://dx.doi.org/10.1063/1.1604161 (3 pages)

Wenyi Cai, Christopher F. Powell, Yong Yue, Suresh Narayanan, Jin Wang, Mark W. Tate, Matthew J. Renzi, Alper Ercan, Ernest Fontes, and Sol M. Gruner
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Distribution of built-in electrical potential in GaInP2/GaAs tandem-junction solar cells

C.-S. Jiang, D. J. Friedman, J. F. Geisz, H. R. Moutinho, M. J. Romero, and M. M. Al-Jassim

Appl. Phys. Lett. 83, 1572 (2003); http://dx.doi.org/10.1063/1.1602575 (3 pages) | Cited 8 times

Online Publication Date: 19 August 2003

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Distributions of built-in potential in GaInP2/GaAs tandem-junction solar cells were investigated by scanning Kelvin probe microscopy. Two states of potential distribution resulting from flattening of band bending and charge accumulation on either the top or bottom p–n junction were observed under short circuit, depending on the illumination spectra. With an external bias voltage, the voltage change always happened on the junction with the charge accumulation, and the potential distribution between the two states became less sensitive to illumination spectra. © 2003 American Institute of Physics.
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84.60.Jt Photoelectric conversion
73.61.Ey III-V semiconductors

Electrical characteristics of Au and Ag Schottky contacts on n-ZnO

A. Y. Polyakov, N. B. Smirnov, E. A. Kozhukhova, V. I. Vdovin, K. Ip, Y. W. Heo, D. P. Norton, and S. J. Pearton

Appl. Phys. Lett. 83, 1575 (2003); http://dx.doi.org/10.1063/1.1604173 (3 pages) | Cited 82 times

Online Publication Date: 19 August 2003

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Au and Ag Schottky contacts on the epiready (0001)Zn surface of bulk n-ZnO crystals show Schottky barrier heights of 0.65–0.70 eV from capacitance–voltage measurements, activation energies for reverse saturation currents of 0.3–0.4 eV and saturation current densities ranging from 10−5 A cm−2 on surfaces etched in HCl to 8×10−7 A cm−2 on solvent cleaned samples. The diode ideality factors were in the range 1.6–1.8 under all conditions. The properties of both the Au and the Ag Schottky diodes were degraded by heating in vacuum to temperatures even as low as 365 K. The degradation mechanisms during annealing were different in each case, with the Au showing reaction with the ZnO surface and the Ag contacts showing localized delamination. Mechanical polishing of the ZnO surface prior to contact deposition produced a high-resistivity damaged layer with prominent deep level defects present with activation energies of 0.55 and 0.65 eV. © 2003 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
68.35.Ct Interface structure and roughness
73.20.At Surface states, band structure, electron density of states
73.61.Ga II-VI semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Current rectification in a single GaN nanowire with a well-defined p–n junction

Guosheng Cheng, Andrei Kolmakov, Youxiang Zhang, Martin Moskovits, Ryan Munden, Mark A. Reed, Guangming Wang, Daniel Moses, and Jinping Zhang

Appl. Phys. Lett. 83, 1578 (2003); http://dx.doi.org/10.1063/1.1604190 (3 pages) | Cited 34 times

Online Publication Date: 19 August 2003

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See Also: Publisher's Note

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This letter discusses Mg incorporation in GaN nanowires with diameters ∼35 nm, fabricated by vapor–liquid–solid synthesis in p-type nanowires. Turning on the Mg doping halfway through the synthesis produced nanowires with p–n junctions that showed excellent rectification properties down to 2.6 K. The nanowires are shown to possess good-quality, crystalline, hexagonal GaN inner cores surrounded by an amorphous GaN outer layer. Most wires grow such that the crystalline c axis is normal to the long axis of the nanowire. The temperature dependence of the current–voltage characteristics is consistent with electron tunneling through a voltage-dependent barrier. © 2003 American Institute of Physics.
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73.40.Ei Rectification
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.72.uj III-V and II-VI semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
73.61.Ey III-V semiconductors
81.05.Ea III-V semiconductors
73.63.Nm Quantum wires
61.46.-w Structure of nanoscale materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Doping-induced type-II to type-I transition and interband optical gain in InAs/AlSb quantum wells

K. I. Kolokolov and C. Z. Ning

Appl. Phys. Lett. 83, 1581 (2003); http://dx.doi.org/10.1063/1.1605236 (3 pages) | Cited 1 time

Online Publication Date: 19 August 2003

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We show that proper doping of the barrier regions can convert the well-known type-II InAs/AlSb quantum wells (QWs) to type I, producing strong interband transitions comparable to regular type-I QWs. The interband gain for TM mode is as high as 4000 1/cm, thus providing an important alternative material system in the midinfrared wavelength range. We also study the TE and TM gain as functions of doping level and intrinsic electron–hole density. © 2003 American Institute of Physics.
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78.67.De Quantum wells
73.21.Fg Quantum wells
81.07.St Quantum wells
61.72.uj III-V and II-VI semiconductors
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
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