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25 Aug 2003

Volume 83, Issue 8, pp. 1497-1679

Issue Cover Spotlight Figure

Appl. Phys. Lett. 83, 1671 (2003); http://dx.doi.org/10.1063/1.1604161 (3 pages)

Wenyi Cai, Christopher F. Powell, Yong Yue, Suresh Narayanan, Jin Wang, Mark W. Tate, Matthew J. Renzi, Alper Ercan, Ernest Fontes, and Sol M. Gruner
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Growth-temperature-dependent (self-)annealing-induced blueshift of photoluminescence from 1.3 μm GaInNAs/GaAs quantum wells

E.-M. Pavelescu, T. Jouhti, M. Dumitrescu, P. J. Klar, S. Karirinne, Y. Fedorenko, and M. Pessa

Appl. Phys. Lett. 83, 1497 (2003); http://dx.doi.org/10.1063/1.1601309 (3 pages) | Cited 36 times

Online Publication Date: 19 August 2003

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Growing the capping layer of a GaInNAs/GaAs quantum well at typical substrate temperature for GaAs growth by molecular-beam epitaxy, like 580 °C, was found to induce a blueshift of the quantum-well emission whose magnitude significantly increased as the quantum-well growth temperature was decreased. The growth-temperature-dependent (self-)annealing-induced blueshift is correlated with the presence of indium and occurs without observable changes in alloy macroscopic composition or quantum-well structure. The underlying cause for the increase in blue shift with decreasing quantum-well growth temperature appears to be an enhancement in the amount of In–N bonds formed by (self-)annealing, likely through a defect-assisted mechanism. © 2003 American Institute of Physics.
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78.67.De Quantum wells
78.55.Cr III-V semiconductors
81.07.St Quantum wells
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors
68.65.Fg Quantum wells
61.72.Cc Kinetics of defect formation and annealing

Experimental study of the optical gain and loss in InAs/GaInSb interband cascade lasers

S. Suchalkin, J. Bruno, R. Tober, D. Westerfeld, M. Kisin, and G. Belenky

Appl. Phys. Lett. 83, 1500 (2003); http://dx.doi.org/10.1063/1.1603334 (3 pages) | Cited 11 times

Online Publication Date: 19 August 2003

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Optical gain and loss have been measured in type II InAs/GaInSb interband cascade lasers operating in the 3.4–3.6 μm wavelength range. The maximum temperature of cw operation was found to be limited by strong gain saturation due to active region overheating, while the temperature increase of the total optical loss was relatively small. In devices with a longer lasing wavelength and a thinner substrate-side cladding layer, a strong periodic modulation of the optical gain spectra was observed. This effect is consistent with resonant optical leakage into the substrate. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes

Observation of Cu surface inhomogeneities by multiphoton photoemission spectromicroscopy

M. Cinchetti, A. Oelsner, G. H. Fecher, H. J. Elmers, and G. Schönhense

Appl. Phys. Lett. 83, 1503 (2003); http://dx.doi.org/10.1063/1.1603332 (3 pages) | Cited 19 times

Online Publication Date: 19 August 2003

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The spatially resolved energy distribution of electrons emitted from a polycrystalline copper surface has been studied by multiphoton photoemission. Electron emission was induced by femtosecond laser excitation and detected by an emission electron microscope combined with a time-of-flight detector to allow spatially resolved energy analysis. The energy distributions obtained from small spots with strongly enhanced electron emission yield (so-called hot spots) turned out to be different from those measured for homogeneous surface regions. The latter directly reflect two photon photoemission spectra from Cu as was previously observed in spatially averaging experiments. The hot spots, however, are characterized by a slightly lower work function and a strongly enhanced intensity if excited by s-polarized light. The peak positions of these spectra do not depend on the photon energy as is characteristic for a true secondary process. This indicates a different electron emission mechanism in the hot spots compared to homogeneous surfaces. © 2003 American Institute of Physics.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
73.30.+y Surface double layers, Schottky barriers, and work functions

Nonresonant quasi-phase matching in GaAs plates by Fresnel birefringence

Riad Haïdar, Ph. Kupecek, and E. Rosencher

Appl. Phys. Lett. 83, 1506 (2003); http://dx.doi.org/10.1063/1.1604474 (3 pages) | Cited 5 times

Online Publication Date: 19 August 2003

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Quasi-phase matching is usually obtained by sign reversal of nonlinear susceptibility. This leads to resonant condition on nonlinear material dimensions and/or converted frequencies. We show that this condition is alleviated using total reflection birefringence. Indeed, Fresnel dephasing at reflection can compensate for almost any phase lag between interacting waves. This nonresonant phase-matching scenario allows both large tunability and nonlinear device design tolerance. © 2003 American Institute of Physics.
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78.20.Fm Birefringence
42.65.-k Nonlinear optics
42.65.An Optical susceptibility, hyperpolarizability

Strain tunable light transmission through a 90° bend waveguide in a two-dimensional photonic crystal

Natalia Malkova, Sungwon Kim, and Venkatraman Gopalan

Appl. Phys. Lett. 83, 1509 (2003); http://dx.doi.org/10.1063/1.1604467 (3 pages) | Cited 10 times

Online Publication Date: 19 August 2003

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We report a device based on strain-tunable light propagation through a 90° bend waveguide based on a two-dimensional photonic crystal. This is achieved by the splitting of a doubly degenerate defect state, by means of a symmetrical distortion of the lattice, locally near the bend. The resonant coupling of the photon modes between the two waveguide arms across the bend can be tuned by the symmetry and the magnitude of the local distortion of the lattice. © 2003 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
42.65.Wi Nonlinear waveguides
42.70.Qs Photonic bandgap materials

Investigation of high-Q channel drop filters using donor-type defects in two-dimensional photonic crystal slabs

Yoshihiro Akahane, Takashi Asano, Bong-Shik Song, and Susumu Noda

Appl. Phys. Lett. 83, 1512 (2003); http://dx.doi.org/10.1063/1.1604179 (3 pages) | Cited 47 times

Online Publication Date: 19 August 2003

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This letter describes experimental investigations of surface-emitting channel drop filters using donor-type point defect cavities and line-defect waveguides in two-dimensional photonic crystal slabs. By using donor-type defect cavities with three and four linearly aligned missing air holes, filter quality factors of around 2600 and 6400, respectively, are achieved experimentally, compared to the quality factor of 400 of previous acceptor-type defect cavities. Radiation patterns and polarization properties of light emitted from the defects are also discussed. The results indicate that these donor-type defects are very useful for the development of ultrasmall high-performance channel add/drop filters. © 2003 American Institute of Physics.
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78.20.-e Optical properties of bulk materials and thin films
42.70.Qs Photonic bandgap materials
42.25.Ja Polarization
42.65.Wi Nonlinear waveguides
42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays
42.50.-p Quantum optics
02.70.Bf Finite-difference methods
84.40.Az Waveguides, transmission lines, striplines

Tunable Fresnel lens using nanoscale polymer-dispersed liquid crystals

Hongwen Ren, Yun-Hsing Fan, and Shin-Tson Wu

Appl. Phys. Lett. 83, 1515 (2003); http://dx.doi.org/10.1063/1.1604943 (3 pages) | Cited 74 times

Online Publication Date: 19 August 2003

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An electrically tunable Fresnel zone plate lens is demonstrated using nanoscale polymer-dispersed liquid crystal droplets. In the voltage-off state, the zone plate behaves like a positive lens. The measured diffraction efficiency is close to the theoretical limit and is controllable by voltage. The major advantages of such a Fresnel lens are simple fabrication, large aperture size, polarization independent, and fast switching speed, although the required operating voltage is relatively high. © 2003 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices
42.79.Ci Filters, zone plates, and polarizers
42.70.Df Liquid crystals
78.20.Jq Electro-optical effects

Efficient white and red light emission from GaN/tris-(8-hydroxyquinolato) aluminum/platinum(II) meso-tetrakis(pentafluorophenyl) porphyrin hybrid light-emitting diodes

Hai-Feng Xiang, Sze-Chit Yu, Chi-Ming Che, and P. T. Lai

Appl. Phys. Lett. 83, 1518 (2003); http://dx.doi.org/10.1063/1.1604192 (3 pages) | Cited 22 times

Online Publication Date: 19 August 2003

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We report efficient white and red light emission from GaN light-emitting diode (LED)/tris-(8-hydroxyquinolato) aluminum (Alq3)/platinum(II) meso-tetrakis(pentafluorophenyl) porphyrin (PtF20TPP) hybrid LEDs. Alq3 was employed to enhance the efficiency of red and white luminescence conversion (LC) LEDs through energy transfer from Alq3 to PtF20TPP. In the white LC-LED, an intense, highly pure white-light emission with CIE_1931 coordinates at x = 0.32 and y = 0.31 is obtained. The LC-LEDs in this work have relatively high efficiencies, 3.3% for white LC-LED and 4.0% for red LC-LED. The color temperature (Tc), color rendering index (Ra) and luminous efficiency (ηL) of the white LC-LED at 20 mA are 6800 K, 90.6 and 10 lm/W, respectively. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds
78.66.Fd III-V semiconductors
78.60.Fi Electroluminescence
73.61.Ph Polymers; organic compounds
73.61.Ey III-V semiconductors

Resonant-cavity-enhanced subwavelength metal–semiconductor–metal photodetector

Stéphane Collin, Fabrice Pardo, and Jean-Luc Pelouard

Appl. Phys. Lett. 83, 1521 (2003); http://dx.doi.org/10.1063/1.1604942 (3 pages) | Cited 21 times

Online Publication Date: 19 August 2003

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We propose a resonant-cavity-enhanced subwavelength metal–semiconductor–metal structure for efficient and ultrafast photodetection. A Fabry–Pérot cavity is composed by a bottom multilayer Bragg reflector and a top subwavelength metallic grating. The structure was fabricated on a GaAs substrate with 75 nm finger width and finger spacing, and theoretical results were validated experimentally by reflection spectra and photocurrent measurements. 75% efficiency is predicted theoretically in a 40-nm-thick GaAs layer, leading to potential cutoff frequencies between 300 and 500 GHz in TE polarization. © 2003 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Sx Metal-semiconductor-metal structures
78.66.Fd III-V semiconductors
73.61.Ey III-V semiconductors
42.79.Dj Gratings

MeV-order proton and carbon ion acceleration by irradiation of 60 fs TW laser pulses on thin copper tape

Takashi Fujii, Yuji Oishi, Takuya Nayuki, Yasushi Takizawa, Koshichi Nemoto, Tsutomu Kayoiji, Kazuhiko Horioka, Yasuaki Okano, Yoichiro Hironaka, Kazutaka G. Nakamura, and Ken-ichi Kondo

Appl. Phys. Lett. 83, 1524 (2003); http://dx.doi.org/10.1063/1.1605248 (3 pages) | Cited 21 times

Online Publication Date: 19 August 2003

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We obtained high-energy ions by irradiating 60 fs laser pulses onto a copper tape target of 5 μm thickness. The proton was accelerated with energy of 1.2 MeV at laser intensity of 6.8×1018 W/cm2. The equivalent Boltzmann temperature of the proton was 185 keV which was less than the ponderomotive potential (650 keV) of an electromagnetic standing wave in a laser field. Moreover, we observed the acceleration of carbon ions with energy of more than 0.4 MeV at laser intensity of 3.4×1018 W/cm2. © 2003 American Institute of Physics.
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07.77.Ka Charged-particle beam sources and detectors
61.82.Bg Metals and alloys
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Biochemical sensors based on polymer microrings with sharp asymmetrical resonance

Chung-Yen Chao and L. Jay Guo

Appl. Phys. Lett. 83, 1527 (2003); http://dx.doi.org/10.1063/1.1605261 (3 pages) | Cited 130 times

Online Publication Date: 19 August 2003

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Photonic microresonators have great potential in the application of highly sensitive sensors due to high Q-factor resonances and steep slopes between zero and unity transmission. A microring resonator with increased resonance slopes is proposed by introducing two partially reflecting elements implemented by waveguide offsets. This configuration produces a Fano-resonant line shape and can greatly enhance the sensitivity of the sensor. Polystyrene microring resonators were fabricated by the nanoimprinting technique, and the optical spectra were measured in glucose solutions of different concentrations. The shift in resonant wavelength and variation of the normalized transmitted intensity are linearly related to the concentration of the glucose solution. © 2003 American Institute of Physics.
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87.80.-y Biophysical techniques (research methods)
42.70.Jk Polymers and organics
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
42.79.-e Optical elements, devices, and systems

Midinfrared intraband electroluminescence from AlInAs quantum dots

N. Ulbrich, J. Bauer, G. Scarpa, R. Boy, D. Schuh, G. Abstreiter, S. Schmult, and W. Wegscheider

Appl. Phys. Lett. 83, 1530 (2003); http://dx.doi.org/10.1063/1.1604469 (3 pages) | Cited 15 times

Online Publication Date: 19 August 2003

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Midinfrared electroluminescence from a cascade of coupled AlInAs quantum dots and GaAs quantum wells at low temperature (80 K) is demonstrated. At low injection currents, the spectra show a clear peak at 158 meV with a luminescence width of 15 meV which is associated with transitions from the s shells of a resonant subensemble of quantum dots. A Stark shift to 143 meV and spectral broadening is observed at higher injection currents which is associated with luminescence from the inhomogeneously broadened quantum-dot ensemble. The reported design is a possible solution to obtain population inversion in unipolar quantum-dot-cascade structures. © 2003 American Institute of Physics.
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78.67.Hc Quantum dots
78.60.Fi Electroluminescence
42.55.Px Semiconductor lasers; laser diodes
78.20.Jq Electro-optical effects
73.21.La Quantum dots
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